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ZXMP4A57E6QTA

ZXMP4A57E6QTA Diodes Inc


392zxmp4a57e6.pdf Hersteller: Diodes Inc
Trans MOSFET P-CH 40V 2.9A Automotive 6-Pin SOT-26 T/R
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Technische Details ZXMP4A57E6QTA Diodes Inc

Description: MOSFET BVDSS: 31V~40V SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V.

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ZXMP4A57E6QTA ZXMP4A57E6QTA Hersteller : Diodes Incorporated ZXMP4A57E6.pdf Description: MOSFET BVDSS: 31V~40V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
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ZXMP4A57E6QTA Hersteller : Diodes Incorporated DIOD_S_A0000570578_1-2541858.pdf MOSFET MOSFET BVDSS: 31V~40V SOT26 T&R 3K
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