ZXMP6A16DN8QTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
| Anzahl | Preis |
|---|---|
| 500+ | 1.02 EUR |
| 1000+ | 0.94 EUR |
| 1500+ | 0.89 EUR |
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Technische Details ZXMP6A16DN8QTA Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMP6A16DN8QTA nach Preis ab 0.93 EUR bis 3.08 EUR
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ZXMP6A16DN8QTA | Diodes Incorporated |
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A16DN8QTA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.9A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Drain to Source Voltage (Vdss): 60V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
auf Bestellung 1820 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
MOSFETs Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| ZXMP6A16DN8QTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 2.9A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 1820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.33 EUR |