auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.83 EUR |
10+ | 1.63 EUR |
100+ | 1.26 EUR |
500+ | 1.04 EUR |
1000+ | 0.82 EUR |
2500+ | 0.78 EUR |
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Technische Details ZXMP6A16DN8TA Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.15W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMP6A16DN8TA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ZXMP6A16DN8TA | Hersteller : Diodes Inc | Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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ZXMP6A16DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.9A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.15W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |