| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.68 EUR |
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Technische Details ZXMP6A16DN8TA Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.9A 8SO, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2.15W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMP6A16DN8TA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ZXMP6A16DN8TA | Diodes Incorporated |
 Description: MOSFET 2P-CH 60V 3.9A 8SOQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
ZXMP6A16DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 3.9A 8SO Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMP6A16DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.9A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 3.9A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMP6A16DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 3.9A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 3.9A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH