Produkte > DIODES INC > ZXMP6A16DN8TC
ZXMP6A16DN8TC

ZXMP6A16DN8TC Diodes Inc


161220878681294zxmp6a16dn8.pdf Hersteller: Diodes Inc
Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details ZXMP6A16DN8TC Diodes Inc

Description: MOSFET 2P-CH 60V 2.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V, Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.

Weitere Produktangebote ZXMP6A16DN8TC

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ZXMP6A16DN8TC ZXMP6A16DN8TC Hersteller : Diodes Incorporated ZXMP6A16DN8.pdf Description: MOSFET 2P-CH 60V 2.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
ZXMP6A16DN8TC ZXMP6A16DN8TC Hersteller : Diodes Incorporated ZXMP6A16DN8.pdf MOSFET MOSFET BVDSS
Produkt ist nicht verfügbar