Technische Details ZXMP6A17DN8QTC Diodes Zetex
Description: MOSFET 2P-CH 60V 2.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMP6A17DN8QTC nach Preis ab 0.7 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ZXMP6A17DN8QTC | Diodes Zetex |
 Trans MOSFET P-CH 60V 2.7A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 72500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
ZXMP6A17DN8QTC | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ZXMP6A17DN8QTC |
|
Hersteller: Diodes Zetex
Trans MOSFET P-CH 60V 2.7A Automotive AEC-Q101 8-Pin SO T/R
Trans MOSFET P-CH 60V 2.7A Automotive AEC-Q101 8-Pin SO T/R
auf Bestellung 72500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.7 EUR |
| ZXMP6A17DN8QTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.8 EUR |
| 5000+ | 0.74 EUR |
| 7500+ | 0.73 EUR |