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ZXMP6A17DN8QTC

ZXMP6A17DN8QTC Diodes Inc


270862723625481zxmp6a17dn8.pdf Hersteller: Diodes Inc
Trans MOSFET P-CH 60V 2.7A Automotive 8-Pin SO T/R
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Technische Details ZXMP6A17DN8QTC Diodes Inc

Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO.

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ZXMP6A17DN8QTC ZXMP6A17DN8QTC Hersteller : Diodes Incorporated ZXMP6A17DN8.pdf Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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ZXMP6A17DN8QTC Hersteller : Diodes Incorporated DIOD_S_A0003133143_1-2542249.pdf MOSFET MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K
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