| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.84 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
500 Stücke
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Technische Details ZXMP6A17DN8TA Diodes Zetex
Description: MOSFET 2P-CH 60V 2.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMP6A17DN8TA nach Preis ab 0.76 EUR bis 2.98 EUR
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ZXMP6A17DN8TA | Diodes Zetex |
 Trans MOSFET P-CH 60V 2.7A 8-Pin SO T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.81W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 8500 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A17DN8TA | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 2.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.81W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 9193 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMP6A17DN8TA |
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Hersteller: Diodes Zetex
Trans MOSFET P-CH 60V 2.7A 8-Pin SO T/R
Trans MOSFET P-CH 60V 2.7A 8-Pin SO T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.87 EUR |
| ZXMP6A17DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| 1500+ | 0.86 EUR |
| 2500+ | 0.81 EUR |
| 3500+ | 0.79 EUR |
| 5000+ | 0.76 EUR |
| ZXMP6A17DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 9193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.26 EUR |