Technische Details ZXTP2012ASTZ Diodes Zetex
Description: DIODES INC. - ZXTP2012ASTZ - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3.5 A, 1 W, E-Line, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, rohsCompliant: Y-EX, DC-Stromverstärkung (hFE), min.: 65hFE, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, euEccn: NLR, Verlustleistung: 1W, Bauform - Transistor: E-Line, Dauerkollektorstrom: 3.5A, Anzahl der Pins: 3Pin(s), Produktpalette: -, Kollektor-Emitter-Spannung, max.: 60V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: PNP, Übergangsfrequenz: 120MHz, Betriebstemperatur, max.: 150°C, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote ZXTP2012ASTZ nach Preis ab 0.86 EUR bis 3.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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ZXTP2012ASTZ | Diodes Incorporated |
 Description: TRANS PNP 60V 3.5A E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 120MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP2012ASTZ | Diodes Incorporated |
Description: TRANS PNP 60V 3.5A E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 120MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 3928 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP2012ASTZ | Diodes Incorporated |
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN |
auf Bestellung 4112 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP2012ASTZ | DIODES INC. |
Description: DIODES INC. - ZXTP2012ASTZ - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3.5 A, 1 W, E-Line, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 65hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1W Bauform - Transistor: E-Line Dauerkollektorstrom: 3.5A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 120MHz Betriebstemperatur, max.: 150°C SVHC: Lead (27-Jun-2024) |
auf Bestellung 2301 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.98 EUR |
| 4000+ | 0.9 EUR |
| 6000+ | 0.87 EUR |
| ZXTP2012ASTZ |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 3.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 3928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.01 EUR |
| ZXTP2012ASTZ |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN
auf Bestellung 4112 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.27 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.01 EUR |
| 2000+ | 0.86 EUR |
| ZXTP2012ASTZ |
|
Hersteller: DIODES INC.
Description: DIODES INC. - ZXTP2012ASTZ - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3.5 A, 1 W, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 65hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: E-Line
Dauerkollektorstrom: 3.5A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - ZXTP2012ASTZ - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 3.5 A, 1 W, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 65hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: E-Line
Dauerkollektorstrom: 3.5A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
SVHC: Lead (27-Jun-2024)
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 3.32 EUR |
| 118+ | 1.98 EUR |
| 176+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |