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ZXTP2012ZQTA Diodes Incorporated


ZXTP2012Z.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 4.3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
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Technische Details ZXTP2012ZQTA Diodes Incorporated

Description: TRANS PNP 60V 4.3A SOT-89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V, Frequency - Transition: 120MHz, Supplier Device Package: SOT-89-3, Grade: Automotive, Current - Collector (Ic) (Max): 4.3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W, Qualification: AEC-Q101.

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ZXTP2012ZQTA ZXTP2012ZQTA Diodes Incorporated ZXTP2012Z.pdf Description: TRANS PNP 60V 4.3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXTP2012ZQTA ZXTP2012ZQTA Diodes Incorporated ZXTP2012Z.pdf Bipolar Transistors - BJT Pwr Low Sat Transistor SOT89 T&R 1K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXTP2012ZQTA ZXTP2012Z.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 4.3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 4.3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXTP2012ZQTA ZXTP2012Z.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor SOT89 T&R 1K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH