Produkte > DIODES INCORPORATED > ZXTP56060FDBQ-7
ZXTP56060FDBQ-7

ZXTP56060FDBQ-7 Diodes Incorporated

ZXTP56060FDBQ.pdf Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details ZXTP56060FDBQ-7 Diodes Incorporated

Description: SS LOW SAT TRANSISTOR U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 510mW, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V, Supplier Device Package: U-DFN2020-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote ZXTP56060FDBQ-7 nach Preis ab 0.25 EUR bis 0.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ZXTP56060FDBQ-7 ZXTP56060FDBQ-7 Hersteller : Diodes Incorporated ZXTP56060FDBQ.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 38700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.28 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
ZXTP56060FDBQ-7 ZXTP56060FDBQ-7 Hersteller : Diodes Incorporated DIOD_S_A0009865557_1-2543448.pdf Bipolar Transistors - BJT 60V Dual PNP Transistor
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.75 EUR
10+0.65 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.29 EUR
3000+0.27 EUR
9000+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
ZXTP56060FDBQ-7 Hersteller : Diodes Inc zxtp56060fdbq.pdf 60V DUAL PNP LOW TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH