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R5F64178DFD#UB R5F64178DFD#UB Renesas Electronics America Inc r01ds0065ej0120_r32c118.pdf Description: IC MCU 16/32BIT 768KB 144LFQFP
Produkt ist nicht verfügbar
R5F64189HDFD#UA R5F64189HDFD#UA Renesas Electronics America Inc r32c118-group-datasheet Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R5S72642W144FP#U0 R5S72642W144FP#U0 Renesas Electronics America Inc sh7262-group-sh7264-group-users-manual-hardware Description: IC MCU 32BIT ROMLESS 208LQFP
Produkt ist nicht verfügbar
R5S72643P144FP#UZ R5S72643P144FP#UZ Renesas Electronics America Inc sh7262-group-sh7264-group-users-manual-hardware Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RJK0346DPA-01#J0B RJK0346DPA-01#J0B Renesas Electronics America Inc rjk0346dpa-datasheet?language=en Description: MOSFET N-CH 30V 65A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+3.22 EUR
Mindestbestellmenge: 2500
RJK03M2DPA-00#J5A RJK03M2DPA-00#J5A Renesas Electronics America Inc rjk03m2dpa-datasheet?language=en Description: MOSFET N-CH 30V 45A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.15 EUR
Mindestbestellmenge: 3000
RJK03M3DPA-00#J5A RJK03M3DPA-00#J5A Renesas Electronics America Inc rjk03m3dpa-datasheet?language=en Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.02 EUR
Mindestbestellmenge: 3000
RJK03M4DPA-00#J5A RJK03M4DPA-00#J5A Renesas Electronics America Inc rjk03m4dpa-datasheet?language=en Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.9 EUR
Mindestbestellmenge: 3000
RJK03M5DNS-00#J5 RJK03M5DNS-00#J5 Renesas Electronics America Inc rjk03m5dns-datasheet Description: MOSFET N-CH 30V 25A 8HWSON
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
RJK03M5DPA-00#J5A RJK03M5DPA-00#J5A Renesas Electronics America Inc rjk03m5dpa-datasheet?language=en Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.75 EUR
Mindestbestellmenge: 3000
RJK0658DPA-00#J5A RJK0658DPA-00#J5A Renesas Electronics America Inc rjk0658dpa-datasheet?language=en Description: MOSFET N-CH 60V 25A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.6 EUR
Mindestbestellmenge: 3000
RJK2057DPA-00#J0 RJK2057DPA-00#J0 Renesas Electronics America Inc rjk2057dpa-datasheet?language=en Description: MOSFET N-CH 200V 20A 8WPAK
Produkt ist nicht verfügbar
RJK2508DPK-00#T0 RJK2508DPK-00#T0 Renesas Electronics America Inc rjk2508dpk-datasheet Description: MOSFET N-CH 250V 50A TO3P
Produkt ist nicht verfügbar
RJK4002DJE-00#Z0 Renesas Electronics America Inc rjk4002dje-data-sheet Description: MOSFET N-CH 400V 3A TO92MOD
Produkt ist nicht verfügbar
RJK4002DPP-M0#T2 RJK4002DPP-M0#T2 Renesas Electronics America Inc rjk4002dpp-m0-datasheet Description: MOSFET N-CH 400V 3A TO220FL
Produkt ist nicht verfügbar
RJK4006DPP-M0#T2 RJK4006DPP-M0#T2 Renesas Electronics America Inc rjk4006dpp-m0-datasheet Description: MOSFET N-CH 400V 8A TO220FL
Produkt ist nicht verfügbar
RJK4007DPP-M0#T2 RJK4007DPP-M0#T2 Renesas Electronics America Inc rjk4007dpp-m0-datasheet Description: MOSFET N-CH 400V 7.6A TO220FL
Produkt ist nicht verfügbar
RJK4013DPE-00#J3 RJK4013DPE-00#J3 Renesas Electronics America Inc rjk4013dpe-datasheet Description: MOSFET N-CH 400V 17A 4LDPAK
Produkt ist nicht verfügbar
RJK4512DPE-00#J3 RJK4512DPE-00#J3 Renesas Electronics America Inc rjk4512dpe-datasheet Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK4514DPK-00#T0 RJK4514DPK-00#T0 Renesas Electronics America Inc rjk4514dpk-datasheet Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
RJK5012DPE-00#J3 RJK5012DPE-00#J3 Renesas Electronics America Inc rjk5012dpe-datasheet Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5012DPP-E0#T2 RJK5012DPP-E0#T2 Renesas Electronics America Inc rjk5012dpp-e0-datasheet Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5013DPE-00#J3 RJK5013DPE-00#J3 Renesas Electronics America Inc rjk5013dpe-datasheet Description: MOSFET N-CH 500V 14A 4LDPAK
Produkt ist nicht verfügbar
RJK5013DPP-E0#T2 RJK5013DPP-E0#T2 Renesas Electronics America Inc r07ds0607ej0100_rjk5014dpp.pdf Description: MOSFET N-CH 500V 14A TO220FP
Produkt ist nicht verfügbar
RJK5015DPM-00#T1 RJK5015DPM-00#T1 Renesas Electronics America Inc rjk5015dpm-datasheet?language=en Description: MOSFET N-CH 500V 25A TO3PFM
Produkt ist nicht verfügbar
RJK5018DPK-00#T0 RJK5018DPK-00#T0 Renesas Electronics America Inc rjk5018dpk-datasheet?language=en Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5026DPP-E0#T2 RJK5026DPP-E0#T2 Renesas Electronics America Inc r07ds0609ej0100_rjk5035dpp.pdf Description: MOSFET N-CH 500V 6A TO220FP
Produkt ist nicht verfügbar
RJK5026DPP-M0#T2 RJK5026DPP-M0#T2 Renesas Electronics America Inc rjk5026dpp-m0-datasheet Description: MOSFET N-CH 500V 6A TO220FL
Produkt ist nicht verfügbar
RJK5034DPP-E0#T2 RJK5034DPP-E0#T2 Renesas Electronics America Inc Description: MOSFET N-CH 500V 1.2A TO220
Produkt ist nicht verfügbar
RJK6015DPK-00#T0 RJK6015DPK-00#T0 Renesas Electronics America Inc rjk6015dpk-datasheet Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
RJK6015DPM-00#T1 RJK6015DPM-00#T1 Renesas Electronics America Inc rjk6015dpm-datasheet Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
RJK6018DPK-00#T0 RJK6018DPK-00#T0 Renesas Electronics America Inc rjk6018dpk-datasheet Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK6018DPM-00#T1 RJK6018DPM-00#T1 Renesas Electronics America Inc rjk6018dpm-datasheet?language=en Description: MOSFET N-CH 600V 30A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK6020DPK-00#T0 RJK6020DPK-00#T0 Renesas Electronics America Inc rjk6020dpk-datasheet Description: MOSFET N-CH 600V 32A TO3P
Produkt ist nicht verfügbar
RJK6026DPE-00#J3 RJK6026DPE-00#J3 Renesas Electronics America Inc rjk6026dpe-datasheet?language=en Description: MOSFET N-CH 600V 5A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
RJK6032DPD-00#J2 RJK6032DPD-00#J2 Renesas Electronics America Inc rjk6032dpd-datasheet Description: MOSFET N-CH 600V 3A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V
Produkt ist nicht verfügbar
RJK6032DPH-E0#T2 RJK6032DPH-E0#T2 Renesas Electronics America Inc rjk6032dph-e0-data-sheet Description: MOSFET N-CH 600V 3A TO251
Produkt ist nicht verfügbar
RJL5012DPP-M0#T2 RJL5012DPP-M0#T2 Renesas Electronics America Inc rjl5012dpp-m0-datasheet Description: MOSFET N-CH 500V 12A TO220FL
Produkt ist nicht verfügbar
RJL5020DPK-00#T0 RJL5020DPK-00#T0 Renesas Electronics America Inc rjl5020dpk-datasheet?language=en Description: MOSFET N-CH 500V 38A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 19A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
Produkt ist nicht verfügbar
RJL6012DPE-00#J3 RJL6012DPE-00#J3 Renesas Electronics America Inc rjl6012dpe-datasheet Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
RJL6013DPE-00#J3 RJL6013DPE-00#J3 Renesas Electronics America Inc rjl6013dpe-datasheet Description: MOSFET N-CH 600V 11A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
RJL6018DPK-00#T0 Renesas Electronics America Inc rjl6018dpk-datasheet Description: MOSFET N-CH 600V 27A TO3P
Produkt ist nicht verfügbar
RJU6054TDPP-EJ#T2 Renesas Electronics America Inc rju6054tdpp-ej-datasheet Description: DIODE GP 600V 30A TO220FP-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RNA51958AFP#H0 RNA51958AFP#H0 Renesas Electronics America Inc rna51958ab-datasheet Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958AP#T0 RNA51958AP#T0 Renesas Electronics America Inc rna51958ab-datasheet Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958BFP#H0 RNA51958BFP#H0 Renesas Electronics America Inc rna51958ab-datasheet Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958BP#T0 RNA51958BP#T0 Renesas Electronics America Inc rna51958ab-datasheet Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
UPA2735GR-E1-AT Renesas Electronics America Inc UPA2735GR_Rev_1.00.pdf Description: MOSFET P-CH 30V 16A 8SOP
Produkt ist nicht verfügbar
UPA2812T1L-E2-AT Renesas Electronics America Inc upa2812t1l-datasheet?language=en Description: MOSFET P-CH 30V 30A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V
Produkt ist nicht verfügbar
UPA2813T1L-E2-AT Renesas Electronics America Inc upa2813t1l-datasheet?language=en Description: MOSFET P-CH 30V 27A 8HWSON
Produkt ist nicht verfügbar
UPA2815T1S-E2-AT Renesas Electronics America Inc upa2815t1s-datasheet?language=en Description: MOSFET P-CH 30V 21A 8HWSON
Produkt ist nicht verfügbar
UPA2821T1L-E1-AT Renesas Electronics America Inc UPA2821T1L.pdf Description: MOSFET N-CH 30V 26A 8HWSON
Produkt ist nicht verfügbar
UPA2822T1L-E1-AT Renesas Electronics America Inc upa2822t1l-datasheet?language=en Description: MOSFET N-CH 30V 34A 8HWSON
Produkt ist nicht verfügbar
UPD70F3451GC(R)-UBT-A UPD70F3451GC(R)-UBT-A Renesas Electronics America Inc v850eif3-v850eig3-hardware-users-manual Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3452GC(R)-UBT-A UPD70F3452GC(R)-UBT-A Renesas Electronics America Inc v850eif3-v850eig3-hardware-users-manual Description: IC MCU 32BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3805GB(R)-GAH-AX UPD70F3805GB(R)-GAH-AX Renesas Electronics America Inc v850esjg3-l-chip-usb-controller-users-manual-hardware Description: IC MCU 32BIT 16KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
Produkt ist nicht verfügbar
UPD70F3808GB(R)-GAH-AX UPD70F3808GB(R)-GAH-AX Renesas Electronics America Inc v850esjg3-l-chip-usb-controller-users-manual-hardware Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3842F1-CAH-A Renesas Electronics America Inc v850esjg3-l-chip-usb-controller-users-manual-hardware Description: IC MCU 32BIT 1MB FLASH 121BGA
Packaging: Tray
Package / Case: 121-LBGA
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3842GC-UEU-AX UPD70F3842GC-UEU-AX Renesas Electronics America Inc v850esjg3-l-chip-usb-controller-users-manual-hardware Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD78F0590MC-CAB-AX UPD78F0590MC-CAB-AX Renesas Electronics America Inc 78k0kx2-users-manual-hardware-r01uh0227ej030078k0kx2a Description: IC MCU 8BIT 16KB FLASH 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 10x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, I²C, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R5F64178DFD#UB r01ds0065ej0120_r32c118.pdf
R5F64178DFD#UB
Hersteller: Renesas Electronics America Inc
Description: IC MCU 16/32BIT 768KB 144LFQFP
Produkt ist nicht verfügbar
R5F64189HDFD#UA r32c118-group-datasheet
R5F64189HDFD#UA
Hersteller: Renesas Electronics America Inc
Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
R5S72642W144FP#U0 sh7262-group-sh7264-group-users-manual-hardware
R5S72642W144FP#U0
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Produkt ist nicht verfügbar
R5S72643P144FP#UZ sh7262-group-sh7264-group-users-manual-hardware
R5S72643P144FP#UZ
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RJK0346DPA-01#J0B rjk0346dpa-datasheet?language=en
RJK0346DPA-01#J0B
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 65A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.22 EUR
Mindestbestellmenge: 2500
RJK03M2DPA-00#J5A rjk03m2dpa-datasheet?language=en
RJK03M2DPA-00#J5A
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 45A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.15 EUR
Mindestbestellmenge: 3000
RJK03M3DPA-00#J5A rjk03m3dpa-datasheet?language=en
RJK03M3DPA-00#J5A
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.02 EUR
Mindestbestellmenge: 3000
RJK03M4DPA-00#J5A rjk03m4dpa-datasheet?language=en
RJK03M4DPA-00#J5A
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.9 EUR
Mindestbestellmenge: 3000
RJK03M5DNS-00#J5 rjk03m5dns-datasheet
RJK03M5DNS-00#J5
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 25A 8HWSON
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
RJK03M5DPA-00#J5A rjk03m5dpa-datasheet?language=en
RJK03M5DPA-00#J5A
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.75 EUR
Mindestbestellmenge: 3000
RJK0658DPA-00#J5A rjk0658dpa-datasheet?language=en
RJK0658DPA-00#J5A
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 25A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.6 EUR
Mindestbestellmenge: 3000
RJK2057DPA-00#J0 rjk2057dpa-datasheet?language=en
RJK2057DPA-00#J0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 200V 20A 8WPAK
Produkt ist nicht verfügbar
RJK2508DPK-00#T0 rjk2508dpk-datasheet
RJK2508DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 250V 50A TO3P
Produkt ist nicht verfügbar
RJK4002DJE-00#Z0 rjk4002dje-data-sheet
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO92MOD
Produkt ist nicht verfügbar
RJK4002DPP-M0#T2 rjk4002dpp-m0-datasheet
RJK4002DPP-M0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO220FL
Produkt ist nicht verfügbar
RJK4006DPP-M0#T2 rjk4006dpp-m0-datasheet
RJK4006DPP-M0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 8A TO220FL
Produkt ist nicht verfügbar
RJK4007DPP-M0#T2 rjk4007dpp-m0-datasheet
RJK4007DPP-M0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 7.6A TO220FL
Produkt ist nicht verfügbar
RJK4013DPE-00#J3 rjk4013dpe-datasheet
RJK4013DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 17A 4LDPAK
Produkt ist nicht verfügbar
RJK4512DPE-00#J3 rjk4512dpe-datasheet
RJK4512DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK4514DPK-00#T0 rjk4514dpk-datasheet
RJK4514DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
RJK5012DPE-00#J3 rjk5012dpe-datasheet
RJK5012DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5012DPP-E0#T2 rjk5012dpp-e0-datasheet
RJK5012DPP-E0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5013DPE-00#J3 rjk5013dpe-datasheet
RJK5013DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A 4LDPAK
Produkt ist nicht verfügbar
RJK5013DPP-E0#T2 r07ds0607ej0100_rjk5014dpp.pdf
RJK5013DPP-E0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A TO220FP
Produkt ist nicht verfügbar
RJK5015DPM-00#T1 rjk5015dpm-datasheet?language=en
RJK5015DPM-00#T1
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 25A TO3PFM
Produkt ist nicht verfügbar
RJK5018DPK-00#T0 rjk5018dpk-datasheet?language=en
RJK5018DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK5026DPP-E0#T2 r07ds0609ej0100_rjk5035dpp.pdf
RJK5026DPP-E0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FP
Produkt ist nicht verfügbar
RJK5026DPP-M0#T2 rjk5026dpp-m0-datasheet
RJK5026DPP-M0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FL
Produkt ist nicht verfügbar
RJK5034DPP-E0#T2
RJK5034DPP-E0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 1.2A TO220
Produkt ist nicht verfügbar
RJK6015DPK-00#T0 rjk6015dpk-datasheet
RJK6015DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
RJK6015DPM-00#T1 rjk6015dpm-datasheet
RJK6015DPM-00#T1
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
RJK6018DPK-00#T0 rjk6018dpk-datasheet
RJK6018DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK6018DPM-00#T1 rjk6018dpm-datasheet?language=en
RJK6018DPM-00#T1
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 30A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
RJK6020DPK-00#T0 rjk6020dpk-datasheet
RJK6020DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 32A TO3P
Produkt ist nicht verfügbar
RJK6026DPE-00#J3 rjk6026dpe-datasheet?language=en
RJK6026DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 5A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
RJK6032DPD-00#J2 rjk6032dpd-datasheet
RJK6032DPD-00#J2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 3A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V
Produkt ist nicht verfügbar
RJK6032DPH-E0#T2 rjk6032dph-e0-data-sheet
RJK6032DPH-E0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 3A TO251
Produkt ist nicht verfügbar
RJL5012DPP-M0#T2 rjl5012dpp-m0-datasheet
RJL5012DPP-M0#T2
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FL
Produkt ist nicht verfügbar
RJL5020DPK-00#T0 rjl5020dpk-datasheet?language=en
RJL5020DPK-00#T0
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 38A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 19A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
Produkt ist nicht verfügbar
RJL6012DPE-00#J3 rjl6012dpe-datasheet
RJL6012DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
RJL6013DPE-00#J3 rjl6013dpe-datasheet
RJL6013DPE-00#J3
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 11A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
RJL6018DPK-00#T0 rjl6018dpk-datasheet
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 27A TO3P
Produkt ist nicht verfügbar
RJU6054TDPP-EJ#T2 rju6054tdpp-ej-datasheet
Hersteller: Renesas Electronics America Inc
Description: DIODE GP 600V 30A TO220FP-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FP-2L
Operating Temperature - Junction: 150°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
RNA51958AFP#H0 rna51958ab-datasheet
RNA51958AFP#H0
Hersteller: Renesas Electronics America Inc
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958AP#T0 rna51958ab-datasheet
RNA51958AP#T0
Hersteller: Renesas Electronics America Inc
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958BFP#H0 rna51958ab-datasheet
RNA51958BFP#H0
Hersteller: Renesas Electronics America Inc
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
RNA51958BP#T0 rna51958ab-datasheet
RNA51958BP#T0
Hersteller: Renesas Electronics America Inc
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
UPA2735GR-E1-AT UPA2735GR_Rev_1.00.pdf
Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 16A 8SOP
Produkt ist nicht verfügbar
UPA2812T1L-E2-AT upa2812t1l-datasheet?language=en
Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 30A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V
Produkt ist nicht verfügbar
UPA2813T1L-E2-AT upa2813t1l-datasheet?language=en
Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 27A 8HWSON
Produkt ist nicht verfügbar
UPA2815T1S-E2-AT upa2815t1s-datasheet?language=en
Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 21A 8HWSON
Produkt ist nicht verfügbar
UPA2821T1L-E1-AT UPA2821T1L.pdf
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 26A 8HWSON
Produkt ist nicht verfügbar
UPA2822T1L-E1-AT upa2822t1l-datasheet?language=en
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 34A 8HWSON
Produkt ist nicht verfügbar
UPD70F3451GC(R)-UBT-A v850eif3-v850eig3-hardware-users-manual
UPD70F3451GC(R)-UBT-A
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3452GC(R)-UBT-A v850eif3-v850eig3-hardware-users-manual
UPD70F3452GC(R)-UBT-A
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3805GB(R)-GAH-AX v850esjg3-l-chip-usb-controller-users-manual-hardware
UPD70F3805GB(R)-GAH-AX
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 16KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
Produkt ist nicht verfügbar
UPD70F3808GB(R)-GAH-AX v850esjg3-l-chip-usb-controller-users-manual-hardware
UPD70F3808GB(R)-GAH-AX
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3842F1-CAH-A v850esjg3-l-chip-usb-controller-users-manual-hardware
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 121BGA
Packaging: Tray
Package / Case: 121-LBGA
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD70F3842GC-UEU-AX v850esjg3-l-chip-usb-controller-users-manual-hardware
UPD70F3842GC-UEU-AX
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I²C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
UPD78F0590MC-CAB-AX 78k0kx2-users-manual-hardware-r01uh0227ej030078k0kx2a
UPD78F0590MC-CAB-AX
Hersteller: Renesas Electronics America Inc
Description: IC MCU 8BIT 16KB FLASH 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 10x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, I²C, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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