Produkte > RENESAS ELECTRONICS AMERICA INC > Alle Produkte des Herstellers RENESAS ELECTRONICS AMERICA INC (20724) > Seite 121 nach 346
| Foto | Bezeichnung | Hersteller | Beschreibung |
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R5F5630DDDFB#V0 | Renesas Electronics America Inc |
 Description: IC MCU 32BIT 1.5MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F5630ECDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F5631ACDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F5631ADDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F5631BCDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFBGA |
Produkt ist nicht verfügbar |
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R5F5631BCDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F5631BCDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFQFP |
Produkt ist nicht verfügbar |
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R5F5631BCDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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R5F5631ECDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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R5F5631ECDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 176LFQFP |
auf Bestellung 149 Stücke: Lieferzeit 21-28 Tag (e) |
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R5F5631EDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F563NACDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLSH 176LFBGA |
Produkt ist nicht verfügbar |
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R5F563NACDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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R5F563NADDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F563NADDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLSH 176LFQFP |
Produkt ist nicht verfügbar |
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R5F563NBCDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFBGA |
Produkt ist nicht verfügbar |
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R5F563NBCDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F563NBCDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFQFP |
Produkt ist nicht verfügbar |
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R5F563NBDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F563NBDDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LFQFP |
Produkt ist nicht verfügbar |
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R5F563NDDDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP |
Produkt ist nicht verfügbar |
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R5F563NECDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 176LFQFP |
Produkt ist nicht verfügbar |
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R5F563T4EDFL#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 32KB FLASH 48LQFP |
Produkt ist nicht verfügbar |
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R5F563T4EDFM#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 32KB FLASH 64LQFP |
Produkt ist nicht verfügbar |
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R5F563T6EDFL#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 64KB FLASH 48LQFP |
Produkt ist nicht verfügbar |
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R5F563TBBDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 256KB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F563TBEDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 256KB FLASH 144LQFP |
Produkt ist nicht verfügbar |
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R5F64178DFB#UB | Renesas Electronics America Inc |
Description: IC MCU 16/32BIT 768KB 100LFQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 768KB (768K x 8) RAM Size: 63K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 8K x 8 Core Processor: R32C/100 Data Converters: A/D 26x10b; D/A 2x8b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 100-LFQFP (14x14) Part Status: Obsolete Number of I/O: 84 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R5F64178DFD#UB | Renesas Electronics America Inc |
Description: IC MCU 16/32BIT 768KB 144LFQFP |
Produkt ist nicht verfügbar |
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R5F64189HDFD#UA | Renesas Electronics America Inc |
Description: IC MCU 16/32B 1MB FLASH 144LFQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1MB (1M x 8) RAM Size: 63K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 8K x 8 Core Processor: R32C/100 Data Converters: A/D 34x10b; D/A 2x8b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 144-LFQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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R5S72642W144FP#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT ROMLESS 208LQFP |
Produkt ist nicht verfügbar |
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R5S72643P144FP#UZ | Renesas Electronics America Inc |
Description: IC MCU 32BIT ROMLESS 208LQFP Packaging: Tray Package / Case: 208-LQFP Mounting Type: Surface Mount Speed: 144MHz RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: SH2A-FPU Data Converters: A/D 8x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 208-LFQFP (28x28) Part Status: Obsolete Number of I/O: 115 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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RJK0346DPA-01#J0B | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 65A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK03M2DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 45A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK03M3DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 40A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 35W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK03M4DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 35A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: 8-WPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK03M5DNS-00#J5 | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 25A 8HWSON |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK03M5DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 30A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: 8-WPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK0658DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 60V 25A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V Power Dissipation (Max): 50W (Tc) Supplier Device Package: 8-WPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RJK2057DPA-00#J0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 200V 20A 8WPAK |
Produkt ist nicht verfügbar |
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RJK2508DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 250V 50A TO3P |
Produkt ist nicht verfügbar |
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| RJK4002DJE-00#Z0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 3A TO92MOD |
Produkt ist nicht verfügbar |
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RJK4002DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 3A TO220FL |
Produkt ist nicht verfügbar |
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RJK4006DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 8A TO220FL |
Produkt ist nicht verfügbar |
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RJK4007DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 7.6A TO220FL |
Produkt ist nicht verfügbar |
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RJK4013DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 17A 4LDPAK |
Produkt ist nicht verfügbar |
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RJK4512DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 450V 14A 4LDPAK Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK4514DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 450V 22A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK5012DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 12A 4LDPAK Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK5012DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK5013DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 14A 4LDPAK |
Produkt ist nicht verfügbar |
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RJK5013DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 14A TO220FP |
Produkt ist nicht verfügbar |
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RJK5015DPM-00#T1 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 25A TO3PFM |
Produkt ist nicht verfügbar |
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RJK5018DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 35A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK5026DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 6A TO220FP |
Produkt ist nicht verfügbar |
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RJK5026DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 6A TO220FL |
Produkt ist nicht verfügbar |
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RJK5034DPP-E0#T2 | Renesas Electronics America Inc | Description: MOSFET N-CH 500V 1.2A TO220 |
Produkt ist nicht verfügbar |
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RJK6015DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 21A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK6015DPM-00#T1 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 21A TO3PFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-3PFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
Produkt ist nicht verfügbar |
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RJK6018DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 30A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
Produkt ist nicht verfügbar |
| R5F5630DDDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F5630ECDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F5631ACDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F5631ADDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F5631BCDBG#U0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Produkt ist nicht verfügbar
| R5F5631BCDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F5631BCDFC#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Produkt ist nicht verfügbar
| R5F5631BCDFP#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Produkt ist nicht verfügbar
| R5F5631ECDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)| R5F5631ECDFC#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
auf Bestellung 149 Stücke:
Lieferzeit 21-28 Tag (e)| R5F5631EDDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F563NACDBG#U0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLSH 176LFBGA
Description: IC MCU 32BIT 768KB FLSH 176LFBGA
Produkt ist nicht verfügbar
| R5F563NACDFP#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Produkt ist nicht verfügbar
| R5F563NADDFB#V0 |
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Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F563NADDFC#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLSH 176LFQFP
Description: IC MCU 32BIT 768KB FLSH 176LFQFP
Produkt ist nicht verfügbar
| R5F563NBCDBG#U0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Produkt ist nicht verfügbar
| R5F563NBCDFB#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F563NBCDFC#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Produkt ist nicht verfügbar
| R5F563NBDDFB#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F563NBDDFP#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LFQFP
Description: IC MCU 32BIT 1MB FLASH 100LFQFP
Produkt ist nicht verfügbar
| R5F563NDDDFC#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP
Produkt ist nicht verfügbar
| R5F563NECDFC#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
Produkt ist nicht verfügbar
| R5F563T4EDFL#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Produkt ist nicht verfügbar
| R5F563T4EDFM#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Produkt ist nicht verfügbar
| R5F563T6EDFL#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Produkt ist nicht verfügbar
| R5F563TBBDFB#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F563TBEDFB#V0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Produkt ist nicht verfügbar
| R5F64178DFB#UB |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 16/32BIT 768KB 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 26x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Part Status: Obsolete
Number of I/O: 84
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT 768KB 100LFQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 26x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 100-LFQFP (14x14)
Part Status: Obsolete
Number of I/O: 84
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| R5F64178DFD#UB |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 16/32BIT 768KB 144LFQFP
Description: IC MCU 16/32BIT 768KB 144LFQFP
Produkt ist nicht verfügbar
| R5F64189HDFD#UA |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| R5S72642W144FP#U0 |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Description: IC MCU 32BIT ROMLESS 208LQFP
Produkt ist nicht verfügbar
| R5S72643P144FP#UZ |
|
Hersteller: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| RJK0346DPA-01#J0B |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 65A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V
Description: MOSFET N-CH 30V 65A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 3.22 EUR |
| RJK03M2DPA-00#J5A |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 45A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
Description: MOSFET N-CH 30V 45A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.15 EUR |
| RJK03M3DPA-00#J5A |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.02 EUR |
| RJK03M4DPA-00#J5A |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.9 EUR |
| RJK03M5DNS-00#J5 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 25A 8HWSON
Description: MOSFET N-CH 30V 25A 8HWSON
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)| RJK03M5DPA-00#J5A |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.75 EUR |
| RJK0658DPA-00#J5A |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 25A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
Description: MOSFET N-CH 60V 25A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.6 EUR |
| RJK2057DPA-00#J0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 200V 20A 8WPAK
Description: MOSFET N-CH 200V 20A 8WPAK
Produkt ist nicht verfügbar
| RJK2508DPK-00#T0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 250V 50A TO3P
Description: MOSFET N-CH 250V 50A TO3P
Produkt ist nicht verfügbar
| RJK4002DJE-00#Z0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO92MOD
Description: MOSFET N-CH 400V 3A TO92MOD
Produkt ist nicht verfügbar
| RJK4002DPP-M0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO220FL
Description: MOSFET N-CH 400V 3A TO220FL
Produkt ist nicht verfügbar
| RJK4006DPP-M0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 8A TO220FL
Description: MOSFET N-CH 400V 8A TO220FL
Produkt ist nicht verfügbar
| RJK4007DPP-M0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 7.6A TO220FL
Description: MOSFET N-CH 400V 7.6A TO220FL
Produkt ist nicht verfügbar
| RJK4013DPE-00#J3 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 17A 4LDPAK
Description: MOSFET N-CH 400V 17A 4LDPAK
Produkt ist nicht verfügbar
| RJK4512DPE-00#J3 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
| RJK4514DPK-00#T0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
| RJK5012DPE-00#J3 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
| RJK5012DPP-E0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
| RJK5013DPE-00#J3 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A 4LDPAK
Description: MOSFET N-CH 500V 14A 4LDPAK
Produkt ist nicht verfügbar
| RJK5013DPP-E0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A TO220FP
Description: MOSFET N-CH 500V 14A TO220FP
Produkt ist nicht verfügbar
| RJK5015DPM-00#T1 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 25A TO3PFM
Description: MOSFET N-CH 500V 25A TO3PFM
Produkt ist nicht verfügbar
| RJK5018DPK-00#T0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar
| RJK5026DPP-E0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FP
Description: MOSFET N-CH 500V 6A TO220FP
Produkt ist nicht verfügbar
| RJK5026DPP-M0#T2 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FL
Description: MOSFET N-CH 500V 6A TO220FL
Produkt ist nicht verfügbar
| RJK5034DPP-E0#T2 |
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 1.2A TO220
Description: MOSFET N-CH 500V 1.2A TO220
Produkt ist nicht verfügbar
| RJK6015DPK-00#T0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
| RJK6015DPM-00#T1 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
| RJK6018DPK-00#T0 |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Produkt ist nicht verfügbar