Produkte > RENESAS ELECTRONICS CORPORATION > Alle Produkte des Herstellers RENESAS ELECTRONICS CORPORATION (26193) > Seite 104 nach 437
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RJK1055DPB-00#J5 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V |
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RJK1056DPB-00#J5 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ673-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 32W (Tc) Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V |
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2SJ687-ZK-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V Power Dissipation (Max): 1W (Ta), 36W (Tc) Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V |
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2SK3481-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Power Dissipation (Max): 1.5W (Ta), 56W (Tc) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
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2SK3482-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V Power Dissipation (Max): 1W (Ta), 50W (Tc) Supplier Device Package: TO-251 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
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2SK3484-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V Power Dissipation (Max): 1W (Ta), 30W (Tc) Supplier Device Package: TO-251 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2SK3793-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
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2SK3811-ZP-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V |
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2SK3813-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Power Dissipation (Max): 1W (Ta), 84W (Tc) Supplier Device Package: TO-251 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V |
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NP110N03PUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V |
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NP110N04PUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V |
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NP160N04TDG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V |
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NP160N04TUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V |
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NP160N04TUJ-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V Qualification: AEC-Q101 |
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NP180N04TUJ-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V |
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NP180N055TUJ-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V |
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NP22N055SHE-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V |
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NP22N055SLE-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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NP23N06YDG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V Power Dissipation (Max): 1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NP32N055SLE-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Power Dissipation (Max): 1.2W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
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NP35N04YUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V Power Dissipation (Max): 1W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP55N03SUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 28A, 10V Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
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NP55N055SDG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
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NP55N055SUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V |
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NP60N03KUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V |
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NP60N03SUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Qualification: AEC-Q101 |
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NP60N055KUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 1.8W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP70N10KUF-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP74N04YUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP75N04YUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N06PLG-E1B-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP82N055PUG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP90N04MUG-S18-AY | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V Power Dissipation (Max): 1.8W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NP90N06VLG-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V Power Dissipation (Max): 1.2W (Ta), 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RJK5033DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: MP-3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK6025DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V Power Dissipation (Max): 29.7W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: MP-3A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR08AM-12A#B00 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR25RM-12LB#B00 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 50Hz Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-3PFM Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR30AM-12LB#B00 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 2.5 V Supplier Device Package: TO-3P Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR5AS-12A-T13#B00 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: MP-3A Part Status: Active Current - On State (It (RMS)) (Max): 5 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCR5LM-12LB#B00 | Renesas Electronics Corporation |
Description: TRIAC 600V 5A TO220FL Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220FL Current - On State (It (RMS)) (Max): 5 A Voltage - Off State: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL26132AVZ | Renesas Electronics Corporation |
![]() Packaging: Tube Features: PGA Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Bits: 24 Configuration: MUX-PGA-ADC Data Interface: SPI Reference Type: External Operating Temperature: -40°C ~ 105°C Voltage - Supply, Analog: 5V Voltage - Supply, Digital: 2.7V ~ 5.25V Sampling Rate (Per Second): 80 Input Type: Differential Number of Inputs: 2 Supplier Device Package: 24-TSSOP Architecture: Sigma-Delta Part Status: Active Number of A/D Converters: 1 |
auf Bestellung 605 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL26134AVZ | Renesas Electronics Corporation |
![]() Packaging: Tube Features: PGA Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Bits: 24 Configuration: MUX-PGA-ADC Data Interface: SPI Reference Type: External Operating Temperature: -40°C ~ 105°C Voltage - Supply, Analog: 5V Voltage - Supply, Digital: 2.7V ~ 5.25V Sampling Rate (Per Second): 80 Input Type: Differential Number of Inputs: 4 Supplier Device Package: 28-TSSOP Architecture: Sigma-Delta Number of A/D Converters: 1 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL26134AVZ-T7A | Renesas Electronics Corporation |
![]() Features: PGA Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Bits: 24 Configuration: MUX-PGA-ADC Data Interface: SPI Reference Type: External Operating Temperature: -40°C ~ 105°C Voltage - Supply, Analog: 5V Voltage - Supply, Digital: 2.7V ~ 5.25V Sampling Rate (Per Second): 80 Input Type: Differential Number of Inputs: 4 Supplier Device Package: 28-TSSOP Architecture: Sigma-Delta Number of A/D Converters: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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5V41064NLG | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL, LVDS Frequency - Max: 100MHz Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 16-VFQFPN (3x3) PLL: Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 477 Stücke: Lieferzeit 10-14 Tag (e) |
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5V41064NLGI | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL, LVDS Frequency - Max: 100MHz Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 16-VFQFPN (3x3) PLL: Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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5V41068APGGI | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL, LVDS Frequency - Max: 200MHz Input: HCSL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 2:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-TSSOP PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 2673 Stücke: Lieferzeit 10-14 Tag (e) |
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9DB233AGLFT | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL Frequency - Max: 110MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 20-TSSOP PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 5311 Stücke: Lieferzeit 10-14 Tag (e) |
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9DB233AGILFT | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL Frequency - Max: 110MHz Input: Clock Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 20-TSSOP PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 2746 Stücke: Lieferzeit 10-14 Tag (e) |
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9DB433AGLFT | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL Frequency - Max: 166MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-TSSOP PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 6093 Stücke: Lieferzeit 10-14 Tag (e) |
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9DB433AGILFT | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL Frequency - Max: 166MHz Input: Clock Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-TSSOP PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 6263 Stücke: Lieferzeit 10-14 Tag (e) |
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9DB633AGLFT | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: HCSL Frequency - Max: 110MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 28-TSSOP PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 1238 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9011IRBLZ | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 1.5V, 2.9V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): -, 0.325V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9011IRBLZ-T | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 1.5V, 2.9V Control Features: Enable Part Status: Obsolete Voltage Dropout (Max): -, 0.325V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9011IRCJZ | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 1.8V, 2.8V Control Features: Enable PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), - Voltage Dropout (Max): -, 0.4V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9011IRCJZ-T | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 1.8V, 2.8V Control Features: Enable PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), - Voltage Dropout (Max): -, 0.4V @ 300mA Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9011IRFCZ | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V, 1.8V Control Features: Enable Part Status: Obsolete PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.2V @ 150mA, - Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9008IEBZ-T | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 65 µA Voltage - Input (Max): 6.5V Number of Regulators: 1 Supplier Device Package: SC-70-5 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISL9011IRFCZ-T | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 6.5V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V, 1.8V Control Features: Enable Part Status: Obsolete PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.2V @ 150mA, - Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO) Current - Supply (Max): 60 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
RJK1055DPB-00#J5 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Produkt ist nicht verfügbar
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RJK1056DPB-00#J5 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 2.03 EUR |
2SJ673-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
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2SJ687-ZK-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3481-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3482-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3484-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
2SK3793-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3811-ZP-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3813-AZ |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NP110N03PUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NP110N04PUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP160N04TDG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP160N04TUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP160N04TUJ-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP180N04TUJ-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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NP180N055TUJ-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
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NP22N055SHE-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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NP22N055SLE-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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NP23N06YDG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.91 EUR |
NP32N055SLE-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NP35N04YUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.19 EUR |
5000+ | 1.14 EUR |
NP55N03SUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Description: MOSFET N-CH 30V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP55N055SDG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NP55N055SUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Description: MOSFET N-CH 55V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP60N03KUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Description: MOSFET N-CH 30V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP60N03SUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP60N055KUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: MOSFET N-CH 55V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP70N10KUF-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 100V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 35A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP74N04YUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.30 EUR |
NP75N04YUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 1.56 EUR |
NP80N06PLG-E1B-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP82N055PUG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Description: MOSFET N-CH 55V 82A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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NP90N04MUG-S18-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NP90N06VLG-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 60V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 45A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RJK5033DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 500V 6A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.51 EUR |
RJK6025DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
Description: MOSFET N-CH 600V 1A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 37.5 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR08AM-12A#B00 |
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Hersteller: Renesas Electronics Corporation
Description: TRIAC SENS GATE 600V 0.8A TO92
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 0.8A TO92
Packaging: Tube
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR25RM-12LB#B00 |
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Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-3PFM
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC 600V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-3PFM
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.03 EUR |
BCR30AM-12LB#B00 |
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Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Supplier Device Package: TO-3P
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 600 V
Description: TRIAC 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Supplier Device Package: TO-3P
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR5AS-12A-T13#B00 |
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Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 5A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Description: TRIAC 600V 5A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: MP-3A
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR5LM-12LB#B00 |
Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220FL
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Description: TRIAC 600V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220FL
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISL26132AVZ |
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Hersteller: Renesas Electronics Corporation
Description: IC ADC 24BIT SIGMA-DELTA 24TSSOP
Packaging: Tube
Features: PGA
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 24-TSSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
Description: IC ADC 24BIT SIGMA-DELTA 24TSSOP
Packaging: Tube
Features: PGA
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 24-TSSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.16 EUR |
10+ | 14.59 EUR |
25+ | 13.91 EUR |
100+ | 12.08 EUR |
250+ | 11.54 EUR |
ISL26134AVZ |
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Hersteller: Renesas Electronics Corporation
Description: IC ADC 24BIT SIGMA-DELTA 28TSSOP
Packaging: Tube
Features: PGA
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 4
Supplier Device Package: 28-TSSOP
Architecture: Sigma-Delta
Number of A/D Converters: 1
Description: IC ADC 24BIT SIGMA-DELTA 28TSSOP
Packaging: Tube
Features: PGA
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 4
Supplier Device Package: 28-TSSOP
Architecture: Sigma-Delta
Number of A/D Converters: 1
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 17.09 EUR |
10+ | 15.44 EUR |
25+ | 14.72 EUR |
100+ | 12.78 EUR |
250+ | 12.20 EUR |
500+ | 11.13 EUR |
ISL26134AVZ-T7A |
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Hersteller: Renesas Electronics Corporation
Description: IC ADC 24BIT SIGMA-DELTA 28TSSOP
Features: PGA
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 4
Supplier Device Package: 28-TSSOP
Architecture: Sigma-Delta
Number of A/D Converters: 1
Description: IC ADC 24BIT SIGMA-DELTA 28TSSOP
Features: PGA
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Bits: 24
Configuration: MUX-PGA-ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Analog: 5V
Voltage - Supply, Digital: 2.7V ~ 5.25V
Sampling Rate (Per Second): 80
Input Type: Differential
Number of Inputs: 4
Supplier Device Package: 28-TSSOP
Architecture: Sigma-Delta
Number of A/D Converters: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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5V41064NLG |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK GEN 1:1 16QFN
Packaging: Tray
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-VFQFPN (3x3)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK GEN 1:1 16QFN
Packaging: Tray
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-VFQFPN (3x3)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.39 EUR |
10+ | 4.83 EUR |
25+ | 4.57 EUR |
80+ | 3.96 EUR |
230+ | 3.76 EUR |
5V41064NLGI |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK GEN 1:1 16QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-VFQFPN (3x3)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK GEN 1:1 16QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 100MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 16-VFQFPN (3x3)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.93 EUR |
10+ | 5.33 EUR |
25+ | 5.04 EUR |
100+ | 4.36 EUR |
250+ | 4.14 EUR |
5V41068APGGI |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK MUX 2:1 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 200MHz
Input: HCSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 2:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK MUX 2:1 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL, LVDS
Frequency - Max: 200MHz
Input: HCSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 2:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2673 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 27.44 EUR |
10+ | 19.77 EUR |
96+ | 15.64 EUR |
192+ | 14.80 EUR |
288+ | 14.38 EUR |
576+ | 13.83 EUR |
9DB233AGLFT |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK FANOUT/BUFF ZD 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK FANOUT/BUFF ZD 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 5311 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.36 EUR |
10+ | 5.59 EUR |
25+ | 5.14 EUR |
100+ | 4.65 EUR |
250+ | 4.42 EUR |
500+ | 4.28 EUR |
1000+ | 4.16 EUR |
9DB233AGILFT |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK FANOUT/BUFF ZD 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK FANOUT/BUFF ZD 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2746 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.52 EUR |
10+ | 5.71 EUR |
25+ | 5.26 EUR |
100+ | 4.77 EUR |
250+ | 4.53 EUR |
500+ | 4.39 EUR |
1000+ | 4.27 EUR |
9DB433AGLFT |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 166MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 166MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 6093 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.04 EUR |
10+ | 5.35 EUR |
25+ | 4.92 EUR |
100+ | 4.45 EUR |
250+ | 4.23 EUR |
500+ | 4.09 EUR |
1000+ | 3.98 EUR |
9DB433AGILFT |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 166MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 166MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 6263 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.96 EUR |
10+ | 6.05 EUR |
25+ | 5.58 EUR |
100+ | 5.06 EUR |
250+ | 4.81 EUR |
500+ | 4.66 EUR |
1000+ | 4.53 EUR |
9DB633AGLFT |
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Hersteller: Renesas Electronics Corporation
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK FANOUT/BUFF ZD 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 110MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-TSSOP
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1238 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.28 EUR |
10+ | 7.08 EUR |
25+ | 6.54 EUR |
100+ | 5.94 EUR |
250+ | 5.65 EUR |
500+ | 5.48 EUR |
1000+ | 5.34 EUR |
ISL9011IRBLZ |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.5V/2.9V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.5V, 2.9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): -, 0.325V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 1.5V/2.9V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.5V, 2.9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): -, 0.325V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
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ISL9011IRBLZ-T |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.5V/2.9V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.5V, 2.9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): -, 0.325V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 1.5V/2.9V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.5V, 2.9V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): -, 0.325V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISL9011IRCJZ |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISL9011IRCJZ-T |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 1.8V/2.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 1.8V, 2.8V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 100kHz), -
Voltage Dropout (Max): -, 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISL9011IRFCZ |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 2.5V/1.8V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V, 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.2V @ 150mA, -
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 2.5V/1.8V 10DFN
Packaging: Tube
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V, 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.2V @ 150mA, -
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ISL9008IEBZ-T |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.5V 150MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 1.5V 150MA SC-70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 1
Supplier Device Package: SC-70-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
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ISL9011IRFCZ-T |
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Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 2.5V/1.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V, 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.2V @ 150mA, -
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Description: IC REG LINEAR 2.5V/1.8V 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6.5V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V, 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: -, 70dB ~ 40dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.2V @ 150mA, -
Protection Features: Over Current, Over Temperature, Soft Start, Under Voltage Lockout (UVLO)
Current - Supply (Max): 60 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH