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ISL28134SOICEVAL1Z Renesas Electronics Corporation isl28134soiceval1z-user-guide Description: EVAL BOARD FOR ISL28134
Packaging: Box
Output Type: Single-Ended, Rail-to-Rail
Amplifier Type: Chopper (Zero-Drift)
Slew Rate: 1.5V/µs
Board Type: Fully Populated
Utilized IC / Part: ISL28134
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Current - Output / Channel: 65mA
Current - Supply (Main IC): 675µA
Contents: Board(s)
Gain Bandwidth Product: 3.5MHz
Produkt ist nicht verfügbar
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ISL29028AIROZ-EVALZ Renesas Electronics Corporation isl29028a-datasheet Description: BOARD EVALUATION FOR ISL29028
Packaging: Box
Sensitivity: 530nm
Interface: I2C, SMBus
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29028A
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Produkt ist nicht verfügbar
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ISL6292EVAL2Z Renesas Electronics Corporation isl6292eval2z-user-guide Description: EVALUATION BOARD FOR ISL6292
Packaging: Box
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ISL6292
Embedded: No
Produkt ist nicht verfügbar
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ISL29030AIROZ-EVALZ Renesas Electronics Corporation isl29030a-datasheet Description: BOARD EVAL FOR ISL29030A
Packaging: Box
Sensitivity: 530nm
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29030A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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ISL85033-12VEVAL3Z ISL85033-12VEVAL3Z Renesas Electronics Corporation isl85033-12veval3z-user-guide Description: EVAL BOARD FOR ISL85033
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 4.5V ~ 28V
Current - Output: 5A
Frequency - Switching: 300kHz ~ 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ISL85033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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ISL28217FUZ ISL28217FUZ Renesas Electronics Corporation isl28117-isl28217-isl28417-isl28417seh-datasheet Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 440µA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 pA
Voltage - Input Offset: 4 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 43 mA
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 40 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.76 EUR
10+6.97 EUR
25+6.59 EUR
100+5.71 EUR
250+5.42 EUR
500+4.86 EUR
1000+4.1 EUR
Mindestbestellmenge: 3
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ISL24021IRT065Z-T7A ISL24021IRT065Z-T7A Renesas Electronics Corporation isl24021-datasheet Description: IC VOLTAGE FEEDBACK 1 CIRC 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.2mA
Slew Rate: 19V/µs
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.4 mV
Supplier Device Package: 8-TDFN (3x3)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 300 mA
-3db Bandwidth: 27 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 19 V
auf Bestellung 1250 Stücke:
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250+3.34 EUR
500+3.09 EUR
750+2.96 EUR
1250+2.91 EUR
Mindestbestellmenge: 250
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ISL32614EFHZ-T7A ISL32614EFHZ-T7A Renesas Electronics Corporation isl32613e-isl32614e-datasheet Description: IC DRIVER 1/0 6SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 256kbps
Protocol: RS422, RS485
Supplier Device Package: 6-SOT
auf Bestellung 1250 Stücke:
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250+4.28 EUR
500+3.84 EUR
1250+3.24 EUR
Mindestbestellmenge: 250
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ISL24021IRT065Z-T7A ISL24021IRT065Z-T7A Renesas Electronics Corporation isl24021-datasheet Description: IC VOLTAGE FEEDBACK 1 CIRC 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.2mA
Slew Rate: 19V/µs
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.4 mV
Supplier Device Package: 8-TDFN (3x3)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 300 mA
-3db Bandwidth: 27 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 19 V
auf Bestellung 1348 Stücke:
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3+8.34 EUR
10+5.57 EUR
25+4.84 EUR
100+4.03 EUR
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ISL32614EFHZ-T7A ISL32614EFHZ-T7A Renesas Electronics Corporation isl32613e-isl32614e-datasheet Description: IC DRIVER 1/0 6SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 256kbps
Protocol: RS422, RS485
Supplier Device Package: 6-SOT
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
10+5.51 EUR
25+5.21 EUR
100+4.51 EUR
Mindestbestellmenge: 3
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ISL23418TFUZ-T7A ISL23418TFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ-T7A ISL23418UFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418WFUZ-T7A ISL23418WFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23428WFRUZ-T7A ISL23428WFRUZ-T7A Renesas Electronics Corporation isl23428-datasheet Description: IC DGT POT 10KOHM 128TAP 16UTQFN
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 16-UTQFN (2.6x1.8)
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+3.92 EUR
Mindestbestellmenge: 250
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ISL23418TFUZ-T7A ISL23418TFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ-T7A ISL23418UFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418WFUZ-T7A ISL23418WFUZ-T7A Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ ISL23418UFUZ Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+2.32 EUR
25+2.19 EUR
100+1.86 EUR
250+1.75 EUR
500+1.53 EUR
1000+1.27 EUR
Mindestbestellmenge: 7
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ISL23418UFUZ-TK ISL23418UFUZ-TK Renesas Electronics Corporation isl23418-datasheet Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.24 EUR
5000+1.19 EUR
10000+1.14 EUR
Mindestbestellmenge: 4000
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ISL21010CFH333Z-TK ISL21010CFH333Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.4V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 95µVp-p
Noise - 10Hz to 10kHz: 40µVrms
Current - Output: 25 mA
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.52 EUR
2000+1.48 EUR
3000+1.46 EUR
5000+1.44 EUR
7000+1.42 EUR
10000+1.41 EUR
Mindestbestellmenge: 1000
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ISL23318TFUZ ISL23318TFUZ Renesas Electronics Corporation isl23318-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
11+1.72 EUR
25+1.57 EUR
100+1.39 EUR
250+1.31 EUR
500+1.26 EUR
1000+1.22 EUR
3000+1.17 EUR
5000+1.15 EUR
Mindestbestellmenge: 8
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ISL23318TFUZ-TK ISL23318TFUZ-TK Renesas Electronics Corporation isl23318-datasheet Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.22 EUR
2000+1.18 EUR
3000+1.17 EUR
5000+1.15 EUR
7000+1.14 EUR
10000+1.13 EUR
Mindestbestellmenge: 1000
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ISL23328WFVZ ISL23328WFVZ Renesas Electronics Corporation isl23328-datasheet Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.91 EUR
10+3.52 EUR
25+3.32 EUR
100+2.83 EUR
250+2.66 EUR
500+2.32 EUR
1000+1.93 EUR
Mindestbestellmenge: 5
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ISL23428WFVZ ISL23428WFVZ Renesas Electronics Corporation isl23428-datasheet Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+2.62 EUR
25+2.48 EUR
100+2.11 EUR
250+1.98 EUR
960+1.74 EUR
Mindestbestellmenge: 7
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ISL21010CFH320Z-TK ISL21010CFH320Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.2V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 58µVp-p
Noise - 10Hz to 10kHz: 26µVrms
Current - Output: 25 mA
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.52 EUR
2000+1.48 EUR
3000+1.46 EUR
5000+1.44 EUR
7000+1.42 EUR
10000+1.41 EUR
Mindestbestellmenge: 1000
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ISL21010CFH330Z-TK ISL21010CFH330Z-TK Renesas Electronics Corporation isl21010-datasheet Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.1V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 86µVp-p
Noise - 10Hz to 10kHz: 36µVrms
Current - Output: 25 mA
auf Bestellung 5000 Stücke:
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1000+1.52 EUR
2000+1.48 EUR
3000+1.46 EUR
5000+1.44 EUR
Mindestbestellmenge: 1000
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ISL9021AIRUWZ-T ISL9021AIRUWZ-T Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
Produkt ist nicht verfügbar
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ISL9021AIRUWZ-T ISL9021AIRUWZ-T Renesas Electronics Corporation isl9021a-datasheet Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
auf Bestellung 646 Stücke:
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9+2.11 EUR
12+1.54 EUR
25+1.4 EUR
100+1.24 EUR
250+1.16 EUR
500+1.12 EUR
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RJK0305DPB-02#J0 RJK0305DPB-02#J0 Renesas Electronics Corporation Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
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RJK0393DPA-00#J5A RJK0393DPA-00#J5A Renesas Electronics Corporation rjk0393dpa-datasheet?language Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0451DPB-00#J5 RJK0451DPB-00#J5 Renesas Electronics Corporation rjk0451dpb-datasheet Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
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RJK0452DPB-00#J5 RJK0452DPB-00#J5 Renesas Electronics Corporation rjk0452dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
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RJK0454DPB-00#J5 RJK0454DPB-00#J5 Renesas Electronics Corporation rjk0454dpb-datasheet Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
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RJK0455DPB-00#J5 RJK0455DPB-00#J5 Renesas Electronics Corporation rjk0455dpb-datasheet Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
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RJK0656DPB-00#J5 RJK0656DPB-00#J5 Renesas Electronics Corporation rjk0656dpb-datasheet Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
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RJK0852DPB-00#J5 RJK0852DPB-00#J5 Renesas Electronics Corporation rjk0852dpb-datasheet Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
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RJK0853DPB-00#J5 RJK0853DPB-00#J5 Renesas Electronics Corporation rjk0853dpb-datasheet?r=1342566 Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
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RJK1052DPB-00#J5 RJK1052DPB-00#J5 Renesas Electronics Corporation rjk1052dpb-datasheet Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
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RJK1055DPB-00#J5 RJK1055DPB-00#J5 Renesas Electronics Corporation rjk1055dpb-datasheet Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
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RJK1056DPB-00#J5 RJK1056DPB-00#J5 Renesas Electronics Corporation rjk1056dpb-datasheet Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Produkt ist nicht verfügbar
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2SJ673-AZ Renesas Electronics Corporation 2sj673-data-sheet Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
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2SJ687-ZK-E1-AY 2SJ687-ZK-E1-AY Renesas Electronics Corporation 2sj687-data-sheet?r=1335351 Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3481-AZ 2SK3481-AZ Renesas Electronics Corporation 2sk3481-data-sheet Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3482-AZ 2SK3482-AZ Renesas Electronics Corporation 2sk3482-data-sheet Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
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2SK3484-AZ 2SK3484-AZ Renesas Electronics Corporation 2sk3484-data-sheet Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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2SK3793-AZ Renesas Electronics Corporation 2sk3793-data-sheet Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3811-ZP-E1-AY 2SK3811-ZP-E1-AY Renesas Electronics Corporation 2sk3811-data-sheet Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3813-AZ 2SK3813-AZ Renesas Electronics Corporation 2sk3813-data-sheet Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Produkt ist nicht verfügbar
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NP110N03PUG-E1-AY NP110N03PUG-E1-AY Renesas Electronics Corporation np110n03pug-data-sheet Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Produkt ist nicht verfügbar
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NP110N04PUG-E1-AY NP110N04PUG-E1-AY Renesas Electronics Corporation np110n04pug-data-sheet Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TDG-E1-AY NP160N04TDG-E1-AY Renesas Electronics Corporation np160n04tdg-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TUG-E1-AY NP160N04TUG-E1-AY Renesas Electronics Corporation np160n04tug-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TUJ-E1-AY NP160N04TUJ-E1-AY Renesas Electronics Corporation np160n04tuj-data-sheet Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP180N04TUJ-E1-AY NP180N04TUJ-E1-AY Renesas Electronics Corporation np180n04tuj-data-sheet Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
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NP180N055TUJ-E1-AY NP180N055TUJ-E1-AY Renesas Electronics Corporation np180n055tuj-data-sheet Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
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NP22N055SHE-E1-AY NP22N055SHE-E1-AY Renesas Electronics Corporation NP22N055xLE_4-1-10.pdf Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Produkt ist nicht verfügbar
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NP22N055SLE-E1-AY NP22N055SLE-E1-AY Renesas Electronics Corporation NP22N055xLE_4-1-10.pdf Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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NP23N06YDG-E1-AY NP23N06YDG-E1-AY Renesas Electronics Corporation np23n06ydg-data-sheet Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 7500 Stücke:
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2500+0.91 EUR
Mindestbestellmenge: 2500
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NP32N055SLE-E1-AY NP32N055SLE-E1-AY Renesas Electronics Corporation np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516 Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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NP35N04YUG-E1-AY NP35N04YUG-E1-AY Renesas Electronics Corporation np35n04yug-data-sheet Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
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2500+1.19 EUR
5000+1.14 EUR
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ISL28134SOICEVAL1Z isl28134soiceval1z-user-guide
Hersteller: Renesas Electronics Corporation
Description: EVAL BOARD FOR ISL28134
Packaging: Box
Output Type: Single-Ended, Rail-to-Rail
Amplifier Type: Chopper (Zero-Drift)
Slew Rate: 1.5V/µs
Board Type: Fully Populated
Utilized IC / Part: ISL28134
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Current - Output / Channel: 65mA
Current - Supply (Main IC): 675µA
Contents: Board(s)
Gain Bandwidth Product: 3.5MHz
Produkt ist nicht verfügbar
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ISL29028AIROZ-EVALZ isl29028a-datasheet
Hersteller: Renesas Electronics Corporation
Description: BOARD EVALUATION FOR ISL29028
Packaging: Box
Sensitivity: 530nm
Interface: I2C, SMBus
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29028A
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Produkt ist nicht verfügbar
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ISL6292EVAL2Z isl6292eval2z-user-guide
Hersteller: Renesas Electronics Corporation
Description: EVALUATION BOARD FOR ISL6292
Packaging: Box
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ISL6292
Embedded: No
Produkt ist nicht verfügbar
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ISL29030AIROZ-EVALZ isl29030a-datasheet
Hersteller: Renesas Electronics Corporation
Description: BOARD EVAL FOR ISL29030A
Packaging: Box
Sensitivity: 530nm
Voltage - Supply: 2.25V ~ 3.63V
Sensor Type: Proximity, Infrared and Ambient Light
Utilized IC / Part: ISL29030A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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ISL85033-12VEVAL3Z isl85033-12veval3z-user-guide
ISL85033-12VEVAL3Z
Hersteller: Renesas Electronics Corporation
Description: EVAL BOARD FOR ISL85033
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 4.5V ~ 28V
Current - Output: 5A
Frequency - Switching: 300kHz ~ 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ISL85033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
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ISL28217FUZ isl28117-isl28217-isl28417-isl28417seh-datasheet
ISL28217FUZ
Hersteller: Renesas Electronics Corporation
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 440µA (x2 Channels)
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 80 pA
Voltage - Input Offset: 4 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 43 mA
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 40 V
auf Bestellung 2300 Stücke:
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Anzahl Preis
3+7.76 EUR
10+6.97 EUR
25+6.59 EUR
100+5.71 EUR
250+5.42 EUR
500+4.86 EUR
1000+4.1 EUR
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ISL24021IRT065Z-T7A isl24021-datasheet
ISL24021IRT065Z-T7A
Hersteller: Renesas Electronics Corporation
Description: IC VOLTAGE FEEDBACK 1 CIRC 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.2mA
Slew Rate: 19V/µs
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.4 mV
Supplier Device Package: 8-TDFN (3x3)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 300 mA
-3db Bandwidth: 27 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 19 V
auf Bestellung 1250 Stücke:
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Anzahl Preis
250+3.34 EUR
500+3.09 EUR
750+2.96 EUR
1250+2.91 EUR
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ISL32614EFHZ-T7A isl32613e-isl32614e-datasheet
ISL32614EFHZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DRIVER 1/0 6SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 256kbps
Protocol: RS422, RS485
Supplier Device Package: 6-SOT
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Anzahl Preis
250+4.28 EUR
500+3.84 EUR
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ISL24021IRT065Z-T7A isl24021-datasheet
ISL24021IRT065Z-T7A
Hersteller: Renesas Electronics Corporation
Description: IC VOLTAGE FEEDBACK 1 CIRC 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.2mA
Slew Rate: 19V/µs
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.4 mV
Supplier Device Package: 8-TDFN (3x3)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 300 mA
-3db Bandwidth: 27 MHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 19 V
auf Bestellung 1348 Stücke:
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Anzahl Preis
3+8.34 EUR
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100+4.03 EUR
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ISL32614EFHZ-T7A isl32613e-isl32614e-datasheet
ISL32614EFHZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DRIVER 1/0 6SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Number of Drivers/Receivers: 1/0
Data Rate: 256kbps
Protocol: RS422, RS485
Supplier Device Package: 6-SOT
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3+6.14 EUR
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ISL23418TFUZ-T7A isl23418-datasheet
ISL23418TFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ-T7A isl23418-datasheet
ISL23418UFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418WFUZ-T7A isl23418-datasheet
ISL23418WFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23428WFRUZ-T7A isl23428-datasheet
ISL23428WFRUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 10KOHM 128TAP 16UTQFN
Packaging: Tape & Reel (TR)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 16-UTQFN (2.6x1.8)
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+3.92 EUR
Mindestbestellmenge: 250
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ISL23418TFUZ-T7A isl23418-datasheet
ISL23418TFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 100k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ-T7A isl23418-datasheet
ISL23418UFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418WFUZ-T7A isl23418-datasheet
ISL23418WFUZ-T7A
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 10KOHM 128TAP 10MSOP
Packaging: Cut Tape (CT)
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 175ppm/°C
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL23418UFUZ isl23418-datasheet
ISL23418UFUZ
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+2.32 EUR
25+2.19 EUR
100+1.86 EUR
250+1.75 EUR
500+1.53 EUR
1000+1.27 EUR
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ISL23418UFUZ-TK isl23418-datasheet
ISL23418UFUZ-TK
Hersteller: Renesas Electronics Corporation
Description: IC DGTL POT 50KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 50k
Tolerance: ±20%
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 85ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
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4000+1.24 EUR
5000+1.19 EUR
10000+1.14 EUR
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ISL21010CFH333Z-TK isl21010-datasheet
ISL21010CFH333Z-TK
Hersteller: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.4V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 95µVp-p
Noise - 10Hz to 10kHz: 40µVrms
Current - Output: 25 mA
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1000+1.52 EUR
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ISL23318TFUZ isl23318-datasheet
ISL23318TFUZ
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tube
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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Anzahl Preis
8+2.36 EUR
11+1.72 EUR
25+1.57 EUR
100+1.39 EUR
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500+1.26 EUR
1000+1.22 EUR
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ISL23318TFUZ-TK isl23318-datasheet
ISL23318TFUZ-TK
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 100KOHM 128TAP 10MSOP
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 10-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 70ppm/°C
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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Anzahl Preis
1000+1.22 EUR
2000+1.18 EUR
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5000+1.15 EUR
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ISL23328WFVZ isl23328-datasheet
ISL23328WFVZ
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Features: Selectable Address
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: I2C
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 1880 Stücke:
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5+3.91 EUR
10+3.52 EUR
25+3.32 EUR
100+2.83 EUR
250+2.66 EUR
500+2.32 EUR
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ISL23428WFVZ isl23428-datasheet
ISL23428WFVZ
Hersteller: Renesas Electronics Corporation
Description: IC DGT POT 10KOHM 128TAP 14TSSOP
Packaging: Tube
Resistance (Ohms): 10k
Tolerance: ±20%
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Volatile
Interface: SPI
Configuration: Potentiometer
Operating Temperature: -40°C ~ 125°C
Number of Taps: 128
Voltage - Supply: 1.2V ~ 5.5V, 1.7V ~ 5.5V
Taper: Linear
Supplier Device Package: 14-TSSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 125ppm/°C
Number of Circuits: 2
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
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Anzahl Preis
7+2.92 EUR
10+2.62 EUR
25+2.48 EUR
100+2.11 EUR
250+1.98 EUR
960+1.74 EUR
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ISL21010CFH320Z-TK isl21010-datasheet
ISL21010CFH320Z-TK
Hersteller: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 2.2V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.048V
Noise - 0.1Hz to 10Hz: 58µVp-p
Noise - 10Hz to 10kHz: 26µVrms
Current - Output: 25 mA
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1000+1.52 EUR
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ISL21010CFH330Z-TK isl21010-datasheet
ISL21010CFH330Z-TK
Hersteller: Renesas Electronics Corporation
Description: IC VREF SERIES 0.2% SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.1V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 100µA
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3V
Noise - 0.1Hz to 10Hz: 86µVp-p
Noise - 10Hz to 10kHz: 36µVrms
Current - Output: 25 mA
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ISL9021AIRUWZ-T isl9021a-datasheet
ISL9021AIRUWZ-T
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
Produkt ist nicht verfügbar
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ISL9021AIRUWZ-T isl9021a-datasheet
ISL9021AIRUWZ-T
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR 1.2V 250MA 6-UTDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-UTDFN (1.6x1.6)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Soft Start
auf Bestellung 646 Stücke:
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9+2.11 EUR
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RJK0305DPB-02#J0
RJK0305DPB-02#J0
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0393DPA-00#J5A rjk0393dpa-datasheet?language
RJK0393DPA-00#J5A
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 40A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: 8-WPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0451DPB-00#J5 rjk0451dpb-datasheet
RJK0451DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17.5A, 10V
Power Dissipation (Max): 45W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0452DPB-00#J5 rjk0452dpb-datasheet
RJK0452DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0454DPB-00#J5 rjk0454dpb-datasheet
RJK0454DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0455DPB-00#J5 rjk0455dpb-datasheet
RJK0455DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 45A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.8 EUR
Mindestbestellmenge: 2500
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RJK0656DPB-00#J5 rjk0656dpb-datasheet
RJK0656DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Produkt ist nicht verfügbar
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RJK0852DPB-00#J5 rjk0852dpb-datasheet
RJK0852DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 30A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.61 EUR
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RJK0853DPB-00#J5 rjk0853dpb-datasheet?r=1342566
RJK0853DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 80V 40A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6170 pF @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.95 EUR
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RJK1052DPB-00#J5 rjk1052dpb-datasheet
RJK1052DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 20A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 10 V
Produkt ist nicht verfügbar
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RJK1055DPB-00#J5 rjk1055dpb-datasheet
RJK1055DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 23A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
Produkt ist nicht verfügbar
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RJK1056DPB-00#J5 rjk1056dpb-datasheet
RJK1056DPB-00#J5
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 25A LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 12.5A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Produkt ist nicht verfügbar
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2SJ673-AZ 2sj673-data-sheet
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
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2SJ687-ZK-E1-AY 2sj687-data-sheet?r=1335351
2SJ687-ZK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3481-AZ 2sk3481-data-sheet
2SK3481-AZ
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 30A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Power Dissipation (Max): 1.5W (Ta), 56W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3482-AZ 2sk3482-data-sheet
2SK3482-AZ
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 36A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 50W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3484-AZ 2sk3484-data-sheet
2SK3484-AZ
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 16A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Supplier Device Package: TO-251
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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2SK3793-AZ 2sk3793-data-sheet
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3811-ZP-E1-AY 2sk3811-data-sheet
2SK3811-ZP-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.5W (Ta), 213W (Tc)
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17700 pF @ 10 V
Produkt ist nicht verfügbar
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2SK3813-AZ 2sk3813-data-sheet
2SK3813-AZ
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Produkt ist nicht verfügbar
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NP110N03PUG-E1-AY np110n03pug-data-sheet
NP110N03PUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 25 V
Produkt ist nicht verfügbar
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NP110N04PUG-E1-AY np110n04pug-data-sheet
NP110N04PUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25700 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TDG-E1-AY np160n04tdg-data-sheet
NP160N04TDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TUG-E1-AY np160n04tug-data-sheet
NP160N04TUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP160N04TUJ-E1-AY np160n04tuj-data-sheet
NP160N04TUJ-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP180N04TUJ-E1-AY np180n04tuj-data-sheet
NP180N04TUJ-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
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NP180N055TUJ-E1-AY np180n055tuj-data-sheet
NP180N055TUJ-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
Produkt ist nicht verfügbar
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NP22N055SHE-E1-AY NP22N055xLE_4-1-10.pdf
NP22N055SHE-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Produkt ist nicht verfügbar
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NP22N055SLE-E1-AY NP22N055xLE_4-1-10.pdf
NP22N055SLE-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 22A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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NP23N06YDG-E1-AY np23n06ydg-data-sheet
NP23N06YDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 23A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
Mindestbestellmenge: 2500
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NP32N055SLE-E1-AY np32n055hlenp32n055ilenp32n055sle-data-sheet?language=en&r=499516
NP32N055SLE-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 32A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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NP35N04YUG-E1-AY np35n04yug-data-sheet
NP35N04YUG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.19 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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