Produkte > RENESAS ELECTRONICS CORPORATION > Alle Produkte des Herstellers RENESAS ELECTRONICS CORPORATION (26182) > Seite 122 nach 437
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RJK03M5DNS-00#J5 | Renesas Electronics Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V Power Dissipation (Max): 15W (Tc) Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V |
auf Bestellung 9786 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0603DPN-E0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V |
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RJK1001DPP-E0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V |
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RJK2006DPE-00#J3 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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RJK2009DPM-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-3PFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
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RJK2508DPK-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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RJK4002DJE-00#Z0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 400V 3A TO92MOD Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 1.5A, 10V Power Dissipation (Max): 2.54W (Tc) Supplier Device Package: TO-92MOD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 100 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V |
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RJK4007DPP-M0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Power Dissipation (Max): 32W (Tc) Supplier Device Package: TO-220FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
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RJK4013DPE-00#J3 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 8.5A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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RJK5014DPP-E0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V Power Dissipation (Max): 35W (Tc) Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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RJK5015DPM-00#T1 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-3PFM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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RJK5020DPK-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V |
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RJK5030DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 41.7W (Tc) Supplier Device Package: MP-3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
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RJK5030DPP-M0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 28.5W (Tc) Supplier Device Package: TO-220FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 1471 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK5031DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 40.3W (Tc) Supplier Device Package: MP-3A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
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RJK5033DPP-M0#T2 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 27.4W (Tc) Supplier Device Package: TO-220FL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 2090 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK6002DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: MP-3A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V |
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RJK6006DPD-00#J2 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 77.6W (Tc) Supplier Device Package: MP-3A Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
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RJK6011DJE-00#Z0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V Power Dissipation (Max): 900mW (Ta) Supplier Device Package: TO-92MOD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
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RJK6012DPE-00#J3 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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RJK6013DPE-00#J3 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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RJK6015DPK-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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RJK6015DPM-00#T1 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-3PFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
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RJL5014DPK-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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RJL6012DPE-00#J3 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 10A 4LDPAK Packaging: Tube Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
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RJL6018DPK-00#T0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 27A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V |
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RJL6020DPK-00#T0 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 15A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V |
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RJP4010AGE-00#P5 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOJ (0.094", 2.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 9V @ 3V, 150A Supplier Device Package: 8-TSOJ Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 1.6 W |
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RNA51953AFP#H0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 4.25V Supplier Device Package: 8-SOP DigiKey Programmable: Not Verified |
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RNA51953BFP#H0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 4.25V Supplier Device Package: 8-SOP DigiKey Programmable: Not Verified |
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RNA51953BP#T0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 4.25V Supplier Device Package: 8-DIP DigiKey Programmable: Not Verified |
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RNA51957AFP#H0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 1.25V Supplier Device Package: 8-SOP DigiKey Programmable: Not Verified |
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RNA51957AP#T0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 1.25V Supplier Device Package: 8-DIP DigiKey Programmable: Not Verified |
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RNA51957BFP#H0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 1.25V Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RNA51957BP#T0 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: Adjustable/Selectable Voltage - Threshold: 1.25V Supplier Device Package: 8-DIP DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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UPA2822T1L-E1-AT | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-HWSON (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V |
Produkt ist nicht verfügbar |
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UPD166009T1F-E1-AY | Renesas Electronics Corporation |
![]() Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 30A Ratio - Input:Output: 1:1 Supplier Device Package: TO-252 (MP-3ZK) Fault Protection: Current Limiting (Fixed), Over Temperature |
Produkt ist nicht verfügbar |
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UPD70F3451GC(R)-UBT-A | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 10x12b, 4x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CSI, I2C, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 80-LQFP (14x14) Part Status: Not For New Designs Number of I/O: 44 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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UPD70F3452GC(R)-UBT-A | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 256KB (256K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 10x12b, 4x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CSI, I2C, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 80-LQFP (14x14) Part Status: Not For New Designs Number of I/O: 44 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD70F3814GA(R)-GAM-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 16KB (16K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 6x10b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB Peripherals: DMA, LVD, PWM, WDT Part Status: Obsolete Number of I/O: 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD70F3815GA-GAM-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 6x10b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB Peripherals: DMA, LVD, PWM, WDT Number of I/O: 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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UPD70F3816GA-GAM-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 24K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 6x10b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB Peripherals: DMA, LVD, PWM, WDT Number of I/O: 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD70F3818GA-GAM-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 24K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 6x10b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB Peripherals: DMA, LVD, PWM, WDT Part Status: Active Number of I/O: 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD70F3840GB(R)-GAH-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 10x10b; D/A 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: CSI, EBI/EMI, I2C, UART/USART Peripherals: DMA, LVD, PWM, WDT Number of I/O: 50 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
UPD70F3842F1-CAH-A | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 121-LBGA Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 1MB (1M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 12x10b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CSI, EBI/EMI, I2C, UART/USART Peripherals: DMA, LVD, PWM, WDT Part Status: Obsolete Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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UPD70F3842GC-UEU-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 1MB (1M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850ES Data Converters: A/D 12x10b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CSI, EBI/EMI, I2C, UART/USART Peripherals: DMA, LVD, PWM, WDT Part Status: Not For New Designs Number of I/O: 83 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD70F3917GF(R)-GAT-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 384KB (384K x 8) RAM Size: 24K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: V850E1 Data Converters: A/D 12x10b, 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.35V ~ 1.65V Connectivity: CSI, I²C, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 68 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD78F0454GA-HAB-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 48KB (48K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: 78K/0 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: 3-Wire SIO, LINbus, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Number of I/O: 46 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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UPD78F0763GB-GAH-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 32KB (32K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: 78K/0 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: 3-Wire SIO, I2C, LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-LFQFP (10x10) Part Status: Not For New Designs Number of I/O: 55 DigiKey Programmable: Not Verified |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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UPD78F9210MA-FAA-AX | Renesas Electronics Corporation |
![]() Packaging: Tray Package / Case: 16-SSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 1KB (1K x 8) RAM Size: 128 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: 78K0S Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V Peripherals: LVD, POR, PWM, WDT Number of I/O: 14 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ISLA214P50-55210EV1Z | Renesas Electronics Corporation |
![]() Packaging: Box Number of Bits: 14 Data Interface: SPI Sampling Rate (Per Second): 500M Utilized IC / Part: ISL55210, ISLA214P50 Supplied Contents: Board(s) Number of A/D Converters: 1 Input Range: 2Vpp Power (Typ) @ Conditions: 900mW @ 500MSPS Part Status: Active |
Produkt ist nicht verfügbar |
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AT45DB081D-SU-2.5-AD | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.5V ~ 3.6V Technology: FLASH Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 264 Bytes x 4096 pages DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ISL28022FUZR5453 | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 60V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Applications: Power Supply Monitor Supplier Device Package: 10-MSOP Current - Supply: 700 µA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ISL28022FUZ-T7AR5453 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 60V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Applications: Power Supply Monitor Supplier Device Package: 10-MSOP Current - Supply: 700 µA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ISL95839HRTZ | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 40-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.75V ~ 25V Operating Temperature: -10°C ~ 100°C Applications: Controller, Intel IMVP-7, VR12™ Supplier Device Package: 40-TQFN (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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ISL95839HRTZ-T | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 1.52V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 4.75V ~ 25V Operating Temperature: -10°C ~ 100°C Applications: Controller, Intel IMVP-7, VR12™ Supplier Device Package: 40-TQFN (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
ISL29044AIROMZ-T7 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-LDFN Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.25V ~ 3.63V Supplier Device Package: 8-ODFN (2.36x3.94) Proximity Detection: Yes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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1338-31DVGI | Renesas Electronics Corporation |
![]() Packaging: Tube Features: Leap Year, NVSRAM, Square Wave Output Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-MSOP Voltage - Supply, Battery: 1.3V ~ 3.7V Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V DigiKey Programmable: Not Verified |
auf Bestellung 361 Stücke: Lieferzeit 10-14 Tag (e) |
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1338-31DVGI8 | Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Features: Leap Year, NVSRAM, Square Wave Output Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-MSOP Voltage - Supply, Battery: 1.3V ~ 3.7V Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2305B-1PGGI | Renesas Electronics Corporation |
![]() Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS, LVCMOS, TTL Frequency - Max: 133MHz Type: Zero Delay Buffer Input: LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
RJK03M5DNS-00#J5 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 25A 8HWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
Description: MOSFET N-CH 30V 25A 8HWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 12.5A, 10V
Power Dissipation (Max): 15W (Tc)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
auf Bestellung 9786 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.89 EUR |
10+ | 1.83 EUR |
100+ | 1.23 EUR |
500+ | 0.97 EUR |
1000+ | 0.89 EUR |
2000+ | 0.82 EUR |
RJK0603DPN-E0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RJK1001DPP-E0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 80A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
Description: MOSFET N-CH 100V 80A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RJK2006DPE-00#J3 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 40A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 200V 40A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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RJK2009DPM-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 200V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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RJK2508DPK-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 250V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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RJK4002DJE-00#Z0 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 400V 3A TO92MOD
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.54W (Tc)
Supplier Device Package: TO-92MOD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Description: MOSFET N-CH 400V 3A TO92MOD
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.54W (Tc)
Supplier Device Package: TO-92MOD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Produkt ist nicht verfügbar
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RJK4007DPP-M0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 400V 7.6A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 32W (Tc)
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Description: MOSFET N-CH 400V 7.6A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 32W (Tc)
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
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RJK4013DPE-00#J3 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 400V 17A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 400V 17A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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RJK5014DPP-E0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 500V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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RJK5015DPM-00#T1 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 25A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 12.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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RJK5020DPK-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 118mOhm @ 20A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Produkt ist nicht verfügbar
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RJK5030DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 5A MP3A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 41.7W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 500V 5A MP3A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 41.7W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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RJK5030DPP-M0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 1471 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.71 EUR |
25+ | 2.19 EUR |
100+ | 1.80 EUR |
500+ | 1.63 EUR |
RJK5031DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 3A MP3A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 500V 3A MP3A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar
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RJK5033DPP-M0#T2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 6A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 27.4W (Tc)
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 500V 6A TO220FL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 27.4W (Tc)
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.56 EUR |
25+ | 3.61 EUR |
100+ | 3.10 EUR |
500+ | 2.75 EUR |
1000+ | 2.36 EUR |
2000+ | 2.22 EUR |
RJK6002DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 2A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Description: MOSFET N-CH 600V 2A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Produkt ist nicht verfügbar
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RJK6006DPD-00#J2 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 5A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 77.6W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 5A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 77.6W (Tc)
Supplier Device Package: MP-3A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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RJK6011DJE-00#Z0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 100MA TO92MOD
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Description: MOSFET N-CH 600V 100MA TO92MOD
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
Produkt ist nicht verfügbar
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RJK6012DPE-00#J3 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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RJK6013DPE-00#J3 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 11A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 600V 11A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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RJK6015DPK-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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RJK6015DPM-00#T1 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 600V 21A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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RJL5014DPK-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 500V 19A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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RJL6012DPE-00#J3 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 600V 10A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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RJL6018DPK-00#T0 |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 27A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
Description: MOSFET N-CH 600V 27A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 25 V
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RJL6020DPK-00#T0 |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
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RJP4010AGE-00#P5 |
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Hersteller: Renesas Electronics Corporation
Description: IGBT 400V 8TSOJ
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOJ (0.094", 2.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 9V @ 3V, 150A
Supplier Device Package: 8-TSOJ
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1.6 W
Description: IGBT 400V 8TSOJ
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOJ (0.094", 2.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 9V @ 3V, 150A
Supplier Device Package: 8-TSOJ
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1.6 W
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RNA51953AFP#H0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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RNA51953BFP#H0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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RNA51953BP#T0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 4.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
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RNA51957AFP#H0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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RNA51957AP#T0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
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RNA51957BFP#H0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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RNA51957BP#T0 |
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Hersteller: Renesas Electronics Corporation
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: Adjustable/Selectable
Voltage - Threshold: 1.25V
Supplier Device Package: 8-DIP
DigiKey Programmable: Not Verified
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UPA2822T1L-E1-AT |
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Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 34A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V
Description: MOSFET N-CH 30V 34A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V
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UPD166009T1F-E1-AY |
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Hersteller: Renesas Electronics Corporation
Description: IC PWR DRIVER N-CHAN 1:1 TO252
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (MP-3ZK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: IC PWR DRIVER N-CHAN 1:1 TO252
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (MP-3ZK)
Fault Protection: Current Limiting (Fixed), Over Temperature
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UPD70F3451GC(R)-UBT-A |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
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UPD70F3452GC(R)-UBT-A |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x12b, 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CSI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 44
DigiKey Programmable: Not Verified
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UPD70F3814GA(R)-GAM-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
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UPD70F3815GA-GAM-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 32
DigiKey Programmable: Not Verified
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UPD70F3816GA-GAM-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 32
DigiKey Programmable: Not Verified
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UPD70F3818GA-GAM-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 6x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.85V ~ 3.6V
Connectivity: CANbus, CSI, EBI/EMI, I²C, UART/USART, USB
Peripherals: DMA, LVD, PWM, WDT
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Not Verified
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UPD70F3840GB(R)-GAH-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 10x10b; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Number of I/O: 50
DigiKey Programmable: Not Verified
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UPD70F3842F1-CAH-A |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 1MB FLASH 121BGA
Packaging: Tray
Package / Case: 121-LBGA
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 121BGA
Packaging: Tray
Package / Case: 121-LBGA
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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UPD70F3842GC-UEU-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850ES
Data Converters: A/D 12x10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CSI, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
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UPD70F3917GF(R)-GAT-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850E1
Data Converters: A/D 12x10b, 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.35V ~ 1.65V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 68
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: V850E1
Data Converters: A/D 12x10b, 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.35V ~ 1.65V
Connectivity: CSI, I²C, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 68
DigiKey Programmable: Not Verified
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UPD78F0454GA-HAB-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 48KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Number of I/O: 46
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 48KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Number of I/O: 46
DigiKey Programmable: Not Verified
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UPD78F0763GB-GAH-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 32KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, I2C, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Not For New Designs
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K/0
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: 3-Wire SIO, I2C, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Not For New Designs
Number of I/O: 55
DigiKey Programmable: Not Verified
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.20 EUR |
10+ | 9.95 EUR |
25+ | 9.13 EUR |
160+ | 8.15 EUR |
UPD78F9210MA-FAA-AX |
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Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 1KB FLASH 16SSOP
Packaging: Tray
Package / Case: 16-SSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K0S
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 1KB FLASH 16SSOP
Packaging: Tray
Package / Case: 16-SSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 1KB (1K x 8)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K0S
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Peripherals: LVD, POR, PWM, WDT
Number of I/O: 14
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISLA214P50-55210EV1Z |
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Hersteller: Renesas Electronics Corporation
Description: BOARD EVAL FOR ISLA214P50
Packaging: Box
Number of Bits: 14
Data Interface: SPI
Sampling Rate (Per Second): 500M
Utilized IC / Part: ISL55210, ISLA214P50
Supplied Contents: Board(s)
Number of A/D Converters: 1
Input Range: 2Vpp
Power (Typ) @ Conditions: 900mW @ 500MSPS
Part Status: Active
Description: BOARD EVAL FOR ISLA214P50
Packaging: Box
Number of Bits: 14
Data Interface: SPI
Sampling Rate (Per Second): 500M
Utilized IC / Part: ISL55210, ISLA214P50
Supplied Contents: Board(s)
Number of A/D Converters: 1
Input Range: 2Vpp
Power (Typ) @ Conditions: 900mW @ 500MSPS
Part Status: Active
Produkt ist nicht verfügbar
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AT45DB081D-SU-2.5-AD |
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Hersteller: Renesas Electronics Corporation
Description: IC FLASH 8MBIT SPI 50MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 50MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 264 Bytes x 4096 pages
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISL28022FUZR5453 |
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Hersteller: Renesas Electronics Corporation
Description: ISL28022FUZ W/GOLD BOND WIRE
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 60V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Applications: Power Supply Monitor
Supplier Device Package: 10-MSOP
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Description: ISL28022FUZ W/GOLD BOND WIRE
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 60V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Applications: Power Supply Monitor
Supplier Device Package: 10-MSOP
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
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ISL28022FUZ-T7AR5453 |
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Hersteller: Renesas Electronics Corporation
Description: ISL28022FUZ-T7A W/GOLD BOND WIRE
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 60V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Applications: Power Supply Monitor
Supplier Device Package: 10-MSOP
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Description: ISL28022FUZ-T7A W/GOLD BOND WIRE
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 60V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Applications: Power Supply Monitor
Supplier Device Package: 10-MSOP
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
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ISL95839HRTZ |
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Hersteller: Renesas Electronics Corporation
Description: IC REG IMVP-7 VR12 2OUT 40TQFN
Packaging: Tube
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.75V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Controller, Intel IMVP-7, VR12™
Supplier Device Package: 40-TQFN (5x5)
Description: IC REG IMVP-7 VR12 2OUT 40TQFN
Packaging: Tube
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.75V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Controller, Intel IMVP-7, VR12™
Supplier Device Package: 40-TQFN (5x5)
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ISL95839HRTZ-T |
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Hersteller: Renesas Electronics Corporation
Description: IC REG IMVP-7 VR12 2OUT 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.75V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Controller, Intel IMVP-7, VR12™
Supplier Device Package: 40-TQFN (5x5)
Description: IC REG IMVP-7 VR12 2OUT 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 1.52V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 4.75V ~ 25V
Operating Temperature: -10°C ~ 100°C
Applications: Controller, Intel IMVP-7, VR12™
Supplier Device Package: 40-TQFN (5x5)
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ISL29044AIROMZ-T7 |
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Hersteller: Renesas Electronics Corporation
Description: SENSOR OPT AMBIENT 8 LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.63V
Supplier Device Package: 8-ODFN (2.36x3.94)
Proximity Detection: Yes
Description: SENSOR OPT AMBIENT 8 LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.63V
Supplier Device Package: 8-ODFN (2.36x3.94)
Proximity Detection: Yes
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1338-31DVGI |
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Hersteller: Renesas Electronics Corporation
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Packaging: Tube
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Packaging: Tube
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V
DigiKey Programmable: Not Verified
auf Bestellung 361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.00 EUR |
10+ | 4.49 EUR |
25+ | 4.24 EUR |
100+ | 3.68 EUR |
250+ | 3.49 EUR |
1338-31DVGI8 |
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Hersteller: Renesas Electronics Corporation
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8MSOP
Packaging: Tape & Reel (TR)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-MSOP
Voltage - Supply, Battery: 1.3V ~ 3.7V
Current - Timekeeping (Max): 5µA @ 3.63V ~ 5.5V
DigiKey Programmable: Not Verified
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2305B-1PGGI |
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Hersteller: Renesas Electronics Corporation
Description: IC ZD BUFFER 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS, LVCMOS, TTL
Frequency - Max: 133MHz
Type: Zero Delay Buffer
Input: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC ZD BUFFER 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS, LVCMOS, TTL
Frequency - Max: 133MHz
Type: Zero Delay Buffer
Input: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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