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R5F11BGEGFB#30 R5F11BGEGFB#30 Renesas Electronics Corporation rl78g1f-datasheet-rev112 Description: IC MCU 16BIT 64KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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4+4.79 EUR
10+4.31 EUR
25+4.06 EUR
80+3.46 EUR
250+3.25 EUR
500+2.84 EUR
1000+2.36 EUR
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R5F11TLEDFB#35 R5F11TLEDFB#35 Renesas Electronics Corporation rl78i1c-datasheet Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 640 Stücke:
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3+7.5 EUR
10+5.49 EUR
25+4.99 EUR
160+4.29 EUR
320+4.11 EUR
480+4.02 EUR
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NP75N04YLG-E1-AY NP75N04YLG-E1-AY Renesas Electronics Corporation np75n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP75N04YLG-E1-AY NP75N04YLG-E1-AY Renesas Electronics Corporation np75n04ylg-data-sheet Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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10+3.19 EUR
100+2.2 EUR
500+1.78 EUR
1000+1.64 EUR
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P9221-RAHGI8 P9221-RAHGI8 Renesas Electronics Corporation p9221-r-datasheet Description: IC WIRELESS
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9221-RAHGI8 P9221-RAHGI8 Renesas Electronics Corporation p9221-r-datasheet Description: IC WIRELESS
Packaging: Cut Tape (CT)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9225-RAHGI8 P9225-RAHGI8 Renesas Electronics Corporation p9225-r-datasheet Description: WIRELESS PWR
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9225-RAHGI8 P9225-RAHGI8 Renesas Electronics Corporation p9225-r-datasheet Description: WIRELESS PWR
Packaging: Cut Tape (CT)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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RTKA788152DE0000BU RTKA788152DE0000BU Renesas Electronics Corporation Description: RS-485 HI VOD TRANSCEIVER EVAL B
Packaging: Bulk
Function: Transceiver, RS-485
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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RJK0603DPN-A0#T2 RJK0603DPN-A0#T2 Renesas Electronics Corporation rjk0603dpn-a0-datasheet-0?language=en&r=1342431 Description: MOSFET N-CH 60V 80A TO220ABA
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220ABA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Produkt ist nicht verfügbar
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74HC4053P-E Renesas Electronics Corporation 74HC4053.pdf Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
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430+1.08 EUR
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NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP60N04VLK-E1-AY NP60N04VLK-E1-AY Renesas Electronics Corporation np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
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5+3.7 EUR
10+2.38 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4187 Stücke:
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5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 859 Stücke:
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3+8.73 EUR
10+6.66 EUR
25+6.14 EUR
100+5.57 EUR
250+5.3 EUR
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UPD166031AT1U-E1-AY UPD166031AT1U-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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UPD166032T1U-E1-AY UPD166032T1U-E1-AY Renesas Electronics Corporation upd166032t1u-data-sheet?r=501201 Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166033T1U-E1-AY UPD166033T1U-E1-AY Renesas Electronics Corporation upd166033t1u-data-sheet Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
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2500+2.18 EUR
Mindestbestellmenge: 2500
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UPD166034T1U-E1-AY UPD166034T1U-E1-AY Renesas Electronics Corporation upd166034t1u-data-sheet?r=501211 Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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PS9531L2-AX PS9531L2-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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50+4.24 EUR
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PS9531L3-AX PS9531L3-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 982 Stücke:
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RBN25H125S1FPQ-A0#CB0 RBN25H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn25h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
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RBN40H125S1FPQ-A0#CB0 RBN40H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
auf Bestellung 295 Stücke:
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2+14.1 EUR
10+12.74 EUR
25+12.15 EUR
100+10.55 EUR
250+10.08 EUR
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RBN40H65T1FPQ-A0#CB0 RBN40H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
Produkt ist nicht verfügbar
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RBN50H65T1FPQ-A0#CB0 RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn50h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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RBN75H65T1FPQ-A0#CB0 RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn75h65t1fpq-a0-datasheet Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
Produkt ist nicht verfügbar
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RJP65T43DPM-00#T1 RJP65T43DPM-00#T1 Renesas Electronics Corporation rjp65t43dpm-datasheet Description: IGBT TRENCH 650V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
Produkt ist nicht verfügbar
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RJP65T54DPM-A0#T2 RJP65T54DPM-A0#T2 Renesas Electronics Corporation rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
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500+8.62 EUR
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RMLV0414EGSB-4S2#AA1 RMLV0414EGSB-4S2#AA1 Renesas Electronics Corporation rmlv0414e-series-datasheet-rev300 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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RMLV0816BGSD-4S2#AA1 RMLV0816BGSD-4S2#AA1 Renesas Electronics Corporation rmlv0816bgsd-4s2-datasheet Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
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RMWV6416AGSA-5S2#AA0 RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation rmwv6416a-series-datasheet Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
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NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
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800+5.11 EUR
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NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
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NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
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NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1551 Stücke:
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NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
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NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
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2500+0.92 EUR
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NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11840 Stücke:
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100+1.42 EUR
500+1.2 EUR
1000+1.08 EUR
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NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2500+0.94 EUR
5000+0.88 EUR
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NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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500+1.2 EUR
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NP179N055TUK-E1-AY NP179N055TUK-E1-AY Renesas Electronics Corporation np179n055tuk-data-sheet?r=499346 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
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NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
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NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
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NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.13 EUR
Mindestbestellmenge: 2500
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NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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2500+1.17 EUR
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NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9760 Stücke:
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500+1.47 EUR
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R5F11BGEGFB#30 rl78g1f-datasheet-rev112
R5F11BGEGFB#30
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 48LFQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 5.5K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: RL78
Data Converters: A/D 17x8/10b; D/A 2x8b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 34
DigiKey Programmable: Not Verified
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Anzahl Preis
4+4.79 EUR
10+4.31 EUR
25+4.06 EUR
80+3.46 EUR
250+3.25 EUR
500+2.84 EUR
1000+2.36 EUR
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R5F11TLEDFB#35 rl78i1c-datasheet
R5F11TLEDFB#35
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 64KB FLASH 64LFQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: RL78
Data Converters: A/D 4x10/24b Sigma-Delta
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: CSI, I2C, IrDA, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LFQFP (10x10)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 640 Stücke:
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Anzahl Preis
3+7.5 EUR
10+5.49 EUR
25+4.99 EUR
160+4.29 EUR
320+4.11 EUR
480+4.02 EUR
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NP75N04YLG-E1-AY np75n04ylg-data-sheet
NP75N04YLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.49 EUR
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NP75N04YLG-E1-AY np75n04ylg-data-sheet
NP75N04YLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 38A, 10V
Power Dissipation (Max): 138W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2929 Stücke:
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Anzahl Preis
4+4.93 EUR
10+3.19 EUR
100+2.2 EUR
500+1.78 EUR
1000+1.64 EUR
Mindestbestellmenge: 4
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P9221-RAHGI8 p9221-r-datasheet
P9221-RAHGI8
Hersteller: Renesas Electronics Corporation
Description: IC WIRELESS
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9221-RAHGI8 p9221-r-datasheet
P9221-RAHGI8
Hersteller: Renesas Electronics Corporation
Description: IC WIRELESS
Packaging: Cut Tape (CT)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9225-RAHGI8 p9225-r-datasheet
P9225-RAHGI8
Hersteller: Renesas Electronics Corporation
Description: WIRELESS PWR
Packaging: Tape & Reel (TR)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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P9225-RAHGI8 p9225-r-datasheet
P9225-RAHGI8
Hersteller: Renesas Electronics Corporation
Description: WIRELESS PWR
Packaging: Cut Tape (CT)
Package / Case: 52-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V, 4.5V ~ 5.5V
Applications: Wireless Power Receiver
Current - Supply: 3mA
Supplier Device Package: 52-WLCSP (2.64x3.94)
Produkt ist nicht verfügbar
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RTKA788152DE0000BU
RTKA788152DE0000BU
Hersteller: Renesas Electronics Corporation
Description: RS-485 HI VOD TRANSCEIVER EVAL B
Packaging: Bulk
Function: Transceiver, RS-485
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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Anzahl Preis
1+61.64 EUR
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RJK0603DPN-A0#T2 rjk0603dpn-a0-datasheet-0?language=en&r=1342431
RJK0603DPN-A0#T2
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 80A TO220ABA
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220ABA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Produkt ist nicht verfügbar
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74HC4053P-E 74HC4053.pdf
Hersteller: Renesas Electronics Corporation
Description: 74HC4053 TRIPLE SINGLE-POLE, DOU
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
430+1.08 EUR
Mindestbestellmenge: 430
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NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP60N04VLK-E1-AY np60n04vlk40-v-60-n-channel-power-mos-fetapplication-automotive?r=499861
NP60N04VLK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
10+2.38 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
10+2.29 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.15 EUR
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RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
10+6.66 EUR
25+6.14 EUR
100+5.57 EUR
250+5.3 EUR
Mindestbestellmenge: 3
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UPD166031AT1U-E1-AY upd166031at1u-data-sheet
UPD166031AT1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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UPD166032T1U-E1-AY upd166032t1u-data-sheet?r=501201
UPD166032T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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UPD166033T1U-E1-AY upd166033t1u-data-sheet
UPD166033T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.18 EUR
Mindestbestellmenge: 2500
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UPD166034T1U-E1-AY upd166034t1u-data-sheet?r=501211
UPD166034T1U-E1-AY
Hersteller: Renesas Electronics Corporation
Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Produkt ist nicht verfügbar
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PS9531L2-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L2-AX
Hersteller: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 50 Stücke:
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Anzahl Preis
3+6 EUR
50+4.24 EUR
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PS9531L3-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L3-AX
Hersteller: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 982 Stücke:
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Anzahl Preis
3+5.93 EUR
50+4.2 EUR
100+3.44 EUR
500+2.9 EUR
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RBN25H125S1FPQ-A0#CB0 rbn25h125s1fpq-a0-datasheet-0
RBN25H125S1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
Produkt ist nicht verfügbar
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RBN40H125S1FPQ-A0#CB0 rbn40h125s1fpq-a0-datasheet-0
RBN40H125S1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.1 EUR
10+12.74 EUR
25+12.15 EUR
100+10.55 EUR
250+10.08 EUR
Mindestbestellmenge: 2
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RBN40H65T1FPQ-A0#CB0 rbn40h65t1fpq-a0-datasheet-0
RBN40H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
Produkt ist nicht verfügbar
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RBN50H65T1FPQ-A0#CB0 rbn50h65t1fpq-a0-datasheet-0
RBN50H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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RBN75H65T1FPQ-A0#CB0 rbn75h65t1fpq-a0-datasheet
RBN75H65T1FPQ-A0#CB0
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
Produkt ist nicht verfügbar
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RJP65T43DPM-00#T1 rjp65t43dpm-datasheet
RJP65T43DPM-00#T1
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 40A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
Produkt ist nicht verfügbar
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RJP65T54DPM-A0#T2 rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit
RJP65T54DPM-A0#T2
Hersteller: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.11 EUR
25+11.07 EUR
100+9.39 EUR
500+8.62 EUR
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RMLV0414EGSB-4S2#AA1 rmlv0414e-series-datasheet-rev300
RMLV0414EGSB-4S2#AA1
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.58 EUR
10+6.12 EUR
25+5.94 EUR
40+5.85 EUR
135+5.61 EUR
270+5.47 EUR
Mindestbestellmenge: 3
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RMLV0816BGSD-4S2#AA1 rmlv0816bgsd-4s2-datasheet
RMLV0816BGSD-4S2#AA1
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.17 EUR
10+9.28 EUR
25+9.1 EUR
40+9.04 EUR
80+8.11 EUR
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RMWV6416AGSA-5S2#AA0 rmwv6416a-series-datasheet
RMWV6416AGSA-5S2#AA0
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
auf Bestellung 27 Stücke:
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Anzahl Preis
1+113.91 EUR
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8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Hersteller: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
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8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Hersteller: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
Produkt ist nicht verfügbar
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NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.11 EUR
1600+4.38 EUR
Mindestbestellmenge: 800
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NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.47 EUR
10+7.11 EUR
100+5.75 EUR
Mindestbestellmenge: 3
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NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
10+6.37 EUR
100+4.79 EUR
Mindestbestellmenge: 2
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NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.78 EUR
Mindestbestellmenge: 800
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NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.57 EUR
10+5 EUR
100+3.54 EUR
Mindestbestellmenge: 3
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NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Produkt ist nicht verfügbar
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NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.89 EUR
10+6.24 EUR
100+4.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.25 EUR
10+6 EUR
100+4.3 EUR
Mindestbestellmenge: 3
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NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.92 EUR
5000+0.88 EUR
Mindestbestellmenge: 2500
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NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 11840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.02 EUR
100+1.42 EUR
500+1.2 EUR
1000+1.08 EUR
Mindestbestellmenge: 8
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NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.94 EUR
5000+0.88 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.01 EUR
100+1.42 EUR
500+1.2 EUR
1000+1.08 EUR
Mindestbestellmenge: 8
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NP179N055TUK-E1-AY np179n055tuk-data-sheet?r=499346
NP179N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.92 EUR
10+11.07 EUR
25+10.31 EUR
80+9.23 EUR
230+8.69 EUR
800+8.14 EUR
1600+7.33 EUR
Mindestbestellmenge: 2
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NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.14 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.56 EUR
10+7.49 EUR
100+5.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.81 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.84 EUR
10+6.58 EUR
100+4.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
Mindestbestellmenge: 6
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NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.13 EUR
Mindestbestellmenge: 2500
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NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+2.44 EUR
100+1.8 EUR
500+1.47 EUR
1000+1.33 EUR
Mindestbestellmenge: 6
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