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DTC114TUBTL DTC114TUBTL Rohm Semiconductor datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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DTC114TUBTL DTC114TUBTL Rohm Semiconductor datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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105+0.2 EUR
170+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
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RV7L020GNTCR1 RV7L020GNTCR1 Rohm Semiconductor datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
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RV7L020GNTCR1 RV7L020GNTCR1 Rohm Semiconductor datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
auf Bestellung 1850 Stücke:
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500+0.46 EUR
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RX2P06BBHC7G RX2P06BBHC7G Rohm Semiconductor rx2p06bbhc7g-e.pdf Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 987 Stücke:
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RD3P07BBHTL1 RD3P07BBHTL1 Rohm Semiconductor rd3p07bbhtl1-e.pdf Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
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RD3P07BBHTL1 RD3P07BBHTL1 Rohm Semiconductor rd3p07bbhtl1-e.pdf Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 2488 Stücke:
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500+2.55 EUR
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MCR03SEQPF5102 MCR03SEQPF5102 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
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10000+0.0084 EUR
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25000+0.008 EUR
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MCR03SEQPF5102 MCR03SEQPF5102 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
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1250+0.017 EUR
1588+0.013 EUR
1786+0.012 EUR
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2075+0.01 EUR
2500+0.0093 EUR
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MCR01SMQPF5102 MCR01SMQPF5102 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
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MCR01SMQPF5102 MCR01SMQPF5102 Rohm Semiconductor datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF5102 SFR01MZPF5102 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RES 0402 CA
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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RB532HS-30T15R RB532HS-30T15R Rohm Semiconductor datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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RB532HS-30T15R RB532HS-30T15R Rohm Semiconductor datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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100+0.26 EUR
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RB058RSM20STL1 RB058RSM20STL1 Rohm Semiconductor datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Produkt ist nicht verfügbar
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RB058RSM20STL1 RB058RSM20STL1 Rohm Semiconductor datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
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RB058RSM20STFTL1 RB058RSM20STFTL1 Rohm Semiconductor datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
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RB058RSM20STFTL1 RB058RSM20STFTL1 Rohm Semiconductor datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
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RB038RSM20STL1 RB038RSM20STL1 Rohm Semiconductor rb038rsm20stl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB038RSM20STL1 RB038RSM20STL1 Rohm Semiconductor rb038rsm20stl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB098RSM20STL1 RB098RSM20STL1 Rohm Semiconductor rb098rsm20stl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB098RSM20STL1 RB098RSM20STL1 Rohm Semiconductor rb098rsm20stl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
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RB048RSM20STL1 RB048RSM20STL1 Rohm Semiconductor rb048rsm20stl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
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RB048RSM20STL1 RB048RSM20STL1 Rohm Semiconductor rb048rsm20stl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
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7+3.47 EUR
10+2.21 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.09 EUR
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RB088RSM20STL1 RB088RSM20STL1 Rohm Semiconductor rb088rsm20stl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
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RB088RSM20STL1 RB088RSM20STL1 Rohm Semiconductor rb088rsm20stl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.25 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.12 EUR
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RB028RSM20STL1 RB028RSM20STL1 Rohm Semiconductor rb028rsm20stl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.04 EUR
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RB028RSM20STL1 RB028RSM20STL1 Rohm Semiconductor rb028rsm20stl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.46 EUR
50+1.86 EUR
100+1.67 EUR
500+1.32 EUR
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RB038RSM20STFTL1 RB038RSM20STFTL1 Rohm Semiconductor rb038rsm20stftl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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RB038RSM20STFTL1 RB038RSM20STFTL1 Rohm Semiconductor rb038rsm20stftl1-e.pdf Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
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10+2.33 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.18 EUR
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RB098RSM20STFTL1 RB098RSM20STFTL1 Rohm Semiconductor rb098rsm20stftl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RB098RSM20STFTL1 RB098RSM20STFTL1 Rohm Semiconductor rb098rsm20stftl1-e.pdf Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.67 EUR
10+2.33 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.18 EUR
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RB048RSM20STFTL1 RB048RSM20STFTL1 Rohm Semiconductor rb048rsm20stftl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.09 EUR
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RB048RSM20STFTL1 RB048RSM20STFTL1 Rohm Semiconductor rb048rsm20stftl1-e.pdf Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.96 EUR
10+2.53 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.32 EUR
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RB088RSM20STFTL1 RB088RSM20STFTL1 Rohm Semiconductor rb088rsm20stftl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RB088RSM20STFTL1 RB088RSM20STFTL1 Rohm Semiconductor rb088rsm20stftl1-e.pdf Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.02 EUR
10+2.57 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.34 EUR
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RB028RSM20STFTL1 RB028RSM20STFTL1 Rohm Semiconductor rb028rsm20stftl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RB028RSM20STFTL1 RB028RSM20STFTL1 Rohm Semiconductor rb028rsm20stftl1-e.pdf Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.41 EUR
10+2.82 EUR
50+2.14 EUR
100+1.92 EUR
500+1.54 EUR
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RB208RSM20STL1 RB208RSM20STL1 Rohm Semiconductor rb208rsm20stl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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RB208RSM20STL1 RB208RSM20STL1 Rohm Semiconductor rb208rsm20stl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.11 EUR
10+2.63 EUR
100+1.78 EUR
500+1.43 EUR
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RB208RSM20STFTL1 RB208RSM20STFTL1 Rohm Semiconductor rb208rsm20stftl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.36 EUR
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RB208RSM20STFTL1 RB208RSM20STFTL1 Rohm Semiconductor rb208rsm20stftl1-e.pdf Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.69 EUR
10+3.02 EUR
100+2.07 EUR
500+1.67 EUR
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SCT4036DEHRC11 SCT4036DEHRC11 Rohm Semiconductor sct4036dehr-e.pdf Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
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1+26.07 EUR
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SCT4050KEC11 SCT4050KEC11 Rohm Semiconductor sct4050ke-e.pdf Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
auf Bestellung 450 Stücke:
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1+26.41 EUR
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2SC5658HZGT2LQ 2SC5658HZGT2LQ Rohm Semiconductor datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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2SC5658HZGT2LQ 2SC5658HZGT2LQ Rohm Semiconductor datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7170 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.21 EUR
143+0.14 EUR
165+0.13 EUR
196+0.11 EUR
250+0.098 EUR
500+0.092 EUR
1000+0.087 EUR
2500+0.082 EUR
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ESR10EZPF2212 ESR10EZPF2212 Rohm Semiconductor esr-e.pdf Description: RES 22.1K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR10EZPF2212 ESR10EZPF2212 Rohm Semiconductor esr-e.pdf Description: RES 22.1K OHM 1% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
auf Bestellung 4590 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
115+0.18 EUR
146+0.14 EUR
172+0.12 EUR
201+0.1 EUR
250+0.087 EUR
500+0.077 EUR
1000+0.069 EUR
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MCR18SEQPF33R0 MCR18SEQPF33R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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MCR18SEQPF33R0 MCR18SEQPF33R0 Rohm Semiconductor datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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ESR03EZPD2201 ESR03EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR03EZPD2201 ESR03EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
113+0.19 EUR
143+0.14 EUR
167+0.13 EUR
193+0.11 EUR
250+0.092 EUR
500+0.081 EUR
1000+0.074 EUR
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SDR03EZPD2202 SDR03EZPD2202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.039 EUR
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SDR03EZPD2202 SDR03EZPD2202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 9296 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.36 EUR
117+0.18 EUR
148+0.14 EUR
173+0.12 EUR
201+0.1 EUR
250+0.088 EUR
500+0.079 EUR
1000+0.07 EUR
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ESR03EZPD2202 ESR03EZPD2202 Rohm Semiconductor esr-e.pdf Description: RES 22K OHM 0.5% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR03EZPD2202 ESR03EZPD2202 Rohm Semiconductor esr-e.pdf Description: RES 22K OHM 0.5% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
113+0.19 EUR
143+0.14 EUR
167+0.13 EUR
193+0.11 EUR
250+0.092 EUR
500+0.081 EUR
1000+0.074 EUR
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ESR10EZPD2201 ESR10EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR10EZPD2201 ESR10EZPD2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
auf Bestellung 4957 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
97+0.21 EUR
121+0.18 EUR
141+0.14 EUR
163+0.13 EUR
250+0.11 EUR
500+0.098 EUR
1000+0.088 EUR
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SDR10EZPD2200 SDR10EZPD2200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.071 EUR
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SDR10EZPD2200 SDR10EZPD2200 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 8451 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
88+0.24 EUR
109+0.19 EUR
127+0.17 EUR
145+0.14 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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DTC114TUBTL datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.065 EUR
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DTC114TUBTL datasheet?p=DTC114TUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
105+0.2 EUR
170+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
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RV7L020GNTCR1 datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RV7L020GNTCR1
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Produkt ist nicht verfügbar
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RV7L020GNTCR1 datasheet?p=RV7L020GN&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RV7L020GNTCR1
Hersteller: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
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RX2P06BBHC7G rx2p06bbhc7g-e.pdf
RX2P06BBHC7G
Hersteller: Rohm Semiconductor
Description: NCH 100V 65A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 65A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
30+3.36 EUR
120+2.74 EUR
510+2.27 EUR
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RD3P07BBHTL1 rd3p07bbhtl1-e.pdf
RD3P07BBHTL1
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
Produkt ist nicht verfügbar
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RD3P07BBHTL1 rd3p07bbhtl1-e.pdf
RD3P07BBHTL1
Hersteller: Rohm Semiconductor
Description: NCH 100V 70A, TO-252, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 70A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
10+4.44 EUR
100+3.12 EUR
500+2.55 EUR
1000+2.37 EUR
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MCR03SEQPF5102 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5102
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.0088 EUR
10000+0.0084 EUR
15000+0.0082 EUR
25000+0.008 EUR
35000+0.0079 EUR
50000+0.0077 EUR
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MCR03SEQPF5102 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF5102
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 kOhms
auf Bestellung 99671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
1112+0.019 EUR
1250+0.017 EUR
1588+0.013 EUR
1786+0.012 EUR
1931+0.011 EUR
2075+0.01 EUR
2500+0.0093 EUR
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MCR01SMQPF5102 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF5102
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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MCR01SMQPF5102 datasheet?p=MCR01SMQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPF5102
Hersteller: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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SFR01MZPF5102 sfr-e.pdf
SFR01MZPF5102
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0402 CA
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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RB532HS-30T15R datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB532HS-30T15R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
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RB532HS-30T15R datasheet?p=RB532HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB532HS-30T15R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTK 30V 200MA DSN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 3789 Stücke:
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31+0.69 EUR
51+0.42 EUR
70+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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RB058RSM20STL1 datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Produkt ist nicht verfügbar
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RB058RSM20STL1 datasheet?p=RB058RSM20S&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
auf Bestellung 2500 Stücke:
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9+2.34 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
2000+0.64 EUR
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RB058RSM20STFTL1 datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
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4000+0.68 EUR
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RB058RSM20STFTL1 datasheet?p=RB058RSM20STF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB058RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 3A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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8+2.67 EUR
13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.8 EUR
2000+0.76 EUR
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RB038RSM20STL1 rb038rsm20stl1-e.pdf
RB038RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.84 EUR
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RB038RSM20STL1 rb038rsm20stl1-e.pdf
RB038RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
11+2.03 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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RB098RSM20STL1 rb098rsm20stl1-e.pdf
RB098RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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4000+0.84 EUR
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RB098RSM20STL1 rb098rsm20stl1-e.pdf
RB098RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
11+2.03 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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RB048RSM20STL1 rb048rsm20stl1-e.pdf
RB048RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.93 EUR
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RB048RSM20STL1 rb048rsm20stl1-e.pdf
RB048RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.09 EUR
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RB088RSM20STL1 rb088rsm20stl1-e.pdf
RB088RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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4000+0.94 EUR
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RB088RSM20STL1 rb088rsm20stl1-e.pdf
RB088RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
10+2.25 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.12 EUR
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RB028RSM20STL1 rb028rsm20stl1-e.pdf
RB028RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.04 EUR
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RB028RSM20STL1 rb028rsm20stl1-e.pdf
RB028RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.46 EUR
50+1.86 EUR
100+1.67 EUR
500+1.32 EUR
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RB038RSM20STFTL1 rb038rsm20stftl1-e.pdf
RB038RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.99 EUR
Mindestbestellmenge: 4000 Stücke
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RB038RSM20STFTL1 rb038rsm20stftl1-e.pdf
RB038RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 4A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.67 EUR
10+2.33 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.18 EUR
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RB098RSM20STFTL1 rb098rsm20stftl1-e.pdf
RB098RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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RB098RSM20STFTL1 rb098rsm20stftl1-e.pdf
RB098RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 6A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 2.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.67 EUR
10+2.33 EUR
100+1.58 EUR
500+1.25 EUR
1000+1.18 EUR
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RB048RSM20STFTL1 rb048rsm20stftl1-e.pdf
RB048RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.09 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RB048RSM20STFTL1 rb048rsm20stftl1-e.pdf
RB048RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 8A, TO-277A, ULTRA LOW IR S
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.3 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.96 EUR
10+2.53 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.32 EUR
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RB088RSM20STFTL1 rb088rsm20stftl1-e.pdf
RB088RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RB088RSM20STFTL1 rb088rsm20stftl1-e.pdf
RB088RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 10A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.02 EUR
10+2.57 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.34 EUR
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RB028RSM20STFTL1 rb028rsm20stftl1-e.pdf
RB028RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RB028RSM20STFTL1 rb028rsm20stftl1-e.pdf
RB028RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 12A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 12 A
Current - Reverse Leakage @ Vr: 4.6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.41 EUR
10+2.82 EUR
50+2.14 EUR
100+1.92 EUR
500+1.54 EUR
Mindestbestellmenge: 5 Stücke
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RB208RSM20STL1 rb208rsm20stl1-e.pdf
RB208RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Produkt ist nicht verfügbar
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RB208RSM20STL1 rb208rsm20stl1-e.pdf
RB208RSM20STL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+2.63 EUR
100+1.78 EUR
500+1.43 EUR
1000+1.38 EUR
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RB208RSM20STFTL1 rb208rsm20stftl1-e.pdf
RB208RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.36 EUR
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RB208RSM20STFTL1 rb208rsm20stftl1-e.pdf
RB208RSM20STFTL1
Hersteller: Rohm Semiconductor
Description: 200V 15A, TO-277A, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 6.5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.69 EUR
10+3.02 EUR
100+2.07 EUR
500+1.67 EUR
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SCT4036DEHRC11 sct4036dehr-e.pdf
SCT4036DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 42A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.07 EUR
30+15.85 EUR
120+13.61 EUR
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SCT4050KEC11 sct4050ke-e.pdf
SCT4050KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 32A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 15A, 18V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 4.8V @ 8mA
Supplier Device Package: TO-247N
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1703 pF @ 800 V
auf Bestellung 450 Stücke:
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1+26.41 EUR
30+16.08 EUR
120+13.8 EUR
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2SC5658HZGT2LQ datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC5658HZGT2LQ
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SC5658HZGT2LQ datasheet?p=2SC5658HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC5658HZGT2LQ
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, 50V 150MA, GENERAL
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 7170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
165+0.13 EUR
196+0.11 EUR
250+0.098 EUR
500+0.092 EUR
1000+0.087 EUR
2500+0.082 EUR
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ESR10EZPF2212 esr-e.pdf
ESR10EZPF2212
Hersteller: Rohm Semiconductor
Description: RES 22.1K OHM 1% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR10EZPF2212 esr-e.pdf
ESR10EZPF2212
Hersteller: Rohm Semiconductor
Description: RES 22.1K OHM 1% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22.1 kOhms
auf Bestellung 4590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
115+0.18 EUR
146+0.14 EUR
172+0.12 EUR
201+0.1 EUR
250+0.087 EUR
500+0.077 EUR
1000+0.069 EUR
Mindestbestellmenge: 59 Stücke
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MCR18SEQPF33R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF33R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MCR18SEQPF33R0 datasheet?p=MCR18SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPF33R0
Hersteller: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 Ohms
Produkt ist nicht verfügbar
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ESR03EZPD2201 esr-e.pdf
ESR03EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR03EZPD2201 esr-e.pdf
ESR03EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.2 kOhms
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
113+0.19 EUR
143+0.14 EUR
167+0.13 EUR
193+0.11 EUR
250+0.092 EUR
500+0.081 EUR
1000+0.074 EUR
Mindestbestellmenge: 56 Stücke
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SDR03EZPD2202 sdr-e.pdf
SDR03EZPD2202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.039 EUR
Mindestbestellmenge: 5000 Stücke
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SDR03EZPD2202 sdr-e.pdf
SDR03EZPD2202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 9296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
117+0.18 EUR
148+0.14 EUR
173+0.12 EUR
201+0.1 EUR
250+0.088 EUR
500+0.079 EUR
1000+0.07 EUR
Mindestbestellmenge: 59 Stücke
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ESR03EZPD2202 esr-e.pdf
ESR03EZPD2202
Hersteller: Rohm Semiconductor
Description: RES 22K OHM 0.5% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR03EZPD2202 esr-e.pdf
ESR03EZPD2202
Hersteller: Rohm Semiconductor
Description: RES 22K OHM 0.5% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 22 kOhms
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
113+0.19 EUR
143+0.14 EUR
167+0.13 EUR
193+0.11 EUR
250+0.092 EUR
500+0.081 EUR
1000+0.074 EUR
Mindestbestellmenge: 56 Stücke
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ESR10EZPD2201 esr-e.pdf
ESR10EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR10EZPD2201 esr-e.pdf
ESR10EZPD2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.2 kOhms
auf Bestellung 4957 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
97+0.21 EUR
121+0.18 EUR
141+0.14 EUR
163+0.13 EUR
250+0.11 EUR
500+0.098 EUR
1000+0.088 EUR
Mindestbestellmenge: 50 Stücke
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SDR10EZPD2200 sdr-e.pdf
SDR10EZPD2200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.071 EUR
Mindestbestellmenge: 5000 Stücke
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SDR10EZPD2200 sdr-e.pdf
SDR10EZPD2200
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 220 Ohms
auf Bestellung 8451 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
88+0.24 EUR
109+0.19 EUR
127+0.17 EUR
145+0.14 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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