Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97669) > Seite 1458 nach 1628
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RSH070N05GZETB | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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RSH070N05TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RSJ250P10FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263 Case: TO263 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -25A On-state resistance: 63mΩ Type of transistor: P-MOSFET Application: automotive industry Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -50A Power dissipation: 50W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 352 Stücke: Lieferzeit 7-14 Tag (e) |
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| RSJ250P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Drain-source voltage: -100V Drain current: -25A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -50A Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSJ400N06FRATL | ROHM SEMICONDUCTOR |
RSJ400N06FRATL SMD N channel transistors |
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| RSJ400N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 50W Drain-source voltage: 100V Drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSJ550N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Drain-source voltage: 100V Drain current: 55A On-state resistance: 18.9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 143nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Power dissipation: 100W Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Drain-source voltage: 100V Drain current: 65A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 260nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 130A Power dissipation: 100W Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 250mA Pulsed drain current: 1A Power dissipation: 150mW Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| RSM002P03T2L | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Case: VMT3 Drain-source voltage: -30V Drain current: -200mA On-state resistance: 2.4Ω Type of transistor: P-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -0.4A Mounting: SMD Anzahl je Verpackung: 5 Stücke |
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| RSQ015N06TR | ROHM SEMICONDUCTOR |
RSQ015N06TR SMD N channel transistors |
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| RSQ015P10FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Power dissipation: 1.25W Anzahl je Verpackung: 1 Stücke |
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| RSQ015P10HZGTR | ROHM SEMICONDUCTOR |
RSQ015P10HZGTR SMD P channel transistors |
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| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSQ035N06HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR010N10HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR015P06FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR015P06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR020N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR025N03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR025P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -10A Drain-source voltage: -30V Drain current: -2.5A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR030N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RSR030N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2594 Stücke: Lieferzeit 7-14 Tag (e) |
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -6A Pulsed drain current: -24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSU002P03T106 | ROHM SEMICONDUCTOR |
RSU002P03T106 SMD P channel transistors |
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| RSX051VAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
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| RSX051VYM30FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| RSX101MM-30TFTR | ROHM SEMICONDUCTOR |
RSX101MM-30TFTR SMD Schottky diodes |
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| RSX101MM-30TR | ROHM SEMICONDUCTOR |
RSX101MM-30TR SMD Schottky diodes |
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| RSX101VAM30TR | ROHM SEMICONDUCTOR |
RSX101VAM30TR SMD Schottky diodes |
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| RSX101VYM30FHTR | ROHM SEMICONDUCTOR |
RSX101VYM30FHTR SMD Schottky diodes |
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| RSX201VAM30TR | ROHM SEMICONDUCTOR |
RSX201VAM30TR SMD Schottky diodes |
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| RSX201VYM30FHTR | ROHM SEMICONDUCTOR |
RSX201VYM30FHTR SMD Schottky diodes |
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| RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.49V Case: SOD128 Kind of package: reel; tape Leakage current: 200µA Max. forward impulse current: 60A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RSX301LAM30TR | ROHM SEMICONDUCTOR |
RSX301LAM30TR SMD Schottky diodes |
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| RSX501LAM20TR | ROHM SEMICONDUCTOR |
RSX501LAM20TR SMD Schottky diodes |
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| RTF016N05TL | ROHM SEMICONDUCTOR |
RTF016N05TL SMD N channel transistors |
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| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTF025N03TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTL020P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6 Mounting: SMD Case: TUMT6 Kind of package: reel; tape Power dissipation: 1W Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Drain-source voltage: -20V On-state resistance: 0.25Ω Drain current: -2A Polarisation: unipolar Gate charge: 4.9nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTL035N03TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Case: TUMT6 Polarisation: unipolar Pulsed drain current: 14A Power dissipation: 1W Gate charge: 4.6nC Drain current: 3.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 79mΩ Gate-source voltage: ±12V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTQ035P02FHATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTR020N05HZGTL | ROHM SEMICONDUCTOR |
RTR020N05HZGTL SMD N channel transistors |
Produkt ist nicht verfügbar |
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| RTR020N05TL | ROHM SEMICONDUCTOR |
RTR020N05TL SMD N channel transistors |
Produkt ist nicht verfügbar |
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| RTR020P02FRATL | ROHM SEMICONDUCTOR | RTR020P02FRATL SMD P channel transistors |
Produkt ist nicht verfügbar |
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| RTR025N03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 3.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.133Ω Type of transistor: N-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -2.5A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| RSH070N05GZETB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSH070N05TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSH070P05GZETB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSH070P05TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSJ151P10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSJ250P10FRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 63mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Power dissipation: 50W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 63mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Power dissipation: 50W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| 45+ | 1.6 EUR |
| 52+ | 1.4 EUR |
| 54+ | 1.33 EUR |
| RSJ250P10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSJ400N06FRATL |
|
Hersteller: ROHM SEMICONDUCTOR
RSJ400N06FRATL SMD N channel transistors
RSJ400N06FRATL SMD N channel transistors
Produkt ist nicht verfügbar
| RSJ400N10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSJ550N10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 55A
On-state resistance: 18.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 143nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 55A
On-state resistance: 18.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 143nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| RSJ650N10TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 65A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 65A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| RSM002N06T2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| RSM002P03T2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Case: VMT3
Drain-source voltage: -30V
Drain current: -200mA
On-state resistance: 2.4Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.4A
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Case: VMT3
Drain-source voltage: -30V
Drain current: -200mA
On-state resistance: 2.4Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.4A
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RSQ015N06TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSQ015N06TR SMD N channel transistors
RSQ015N06TR SMD N channel transistors
Produkt ist nicht verfügbar
| RSQ015P10FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ015P10HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
RSQ015P10HZGTR SMD P channel transistors
RSQ015P10HZGTR SMD P channel transistors
Produkt ist nicht verfügbar
| RSQ020N03HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ025P03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ030N08HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ035N03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ035N06HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSQ035P03FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR010N10FHATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR010N10HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR015P06FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR015P06HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR020N06FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR020N06HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR025N03FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR025N03HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR025P03FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -10A
Drain-source voltage: -30V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR030N06FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSR030N06HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2594 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 193+ | 0.37 EUR |
| 205+ | 0.35 EUR |
| 246+ | 0.29 EUR |
| 261+ | 0.27 EUR |
| 3000+ | 0.26 EUR |
| RSS060P05FRATB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSS090N03FRATB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSS100N03HZGTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RSU002P03T106 |
|
Hersteller: ROHM SEMICONDUCTOR
RSU002P03T106 SMD P channel transistors
RSU002P03T106 SMD P channel transistors
Produkt ist nicht verfügbar
| RSX051VAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 640+ | 0.11 EUR |
| 810+ | 0.089 EUR |
| 1040+ | 0.069 EUR |
| 1100+ | 0.065 EUR |
| RSX051VYM30FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| RSX101MM-30TFTR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX101MM-30TFTR SMD Schottky diodes
RSX101MM-30TFTR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX101MM-30TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX101MM-30TR SMD Schottky diodes
RSX101MM-30TR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX101VAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX101VAM30TR SMD Schottky diodes
RSX101VAM30TR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX101VYM30FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX101VYM30FHTR SMD Schottky diodes
RSX101VYM30FHTR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX201VAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX201VAM30TR SMD Schottky diodes
RSX201VAM30TR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX201VYM30FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX201VYM30FHTR SMD Schottky diodes
RSX201VYM30FHTR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX205LAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Anzahl je Verpackung: 5 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RSX301LAM30TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX301LAM30TR SMD Schottky diodes
RSX301LAM30TR SMD Schottky diodes
Produkt ist nicht verfügbar
| RSX501LAM20TR |
|
Hersteller: ROHM SEMICONDUCTOR
RSX501LAM20TR SMD Schottky diodes
RSX501LAM20TR SMD Schottky diodes
Produkt ist nicht verfügbar
| RTF016N05TL |
|
Hersteller: ROHM SEMICONDUCTOR
RTF016N05TL SMD N channel transistors
RTF016N05TL SMD N channel transistors
Produkt ist nicht verfügbar
| RTF025N03FRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTF025N03TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTL020P02FRATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Mounting: SMD
Case: TUMT6
Kind of package: reel; tape
Power dissipation: 1W
Type of transistor: P-MOSFET
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Drain-source voltage: -20V
On-state resistance: 0.25Ω
Drain current: -2A
Polarisation: unipolar
Gate charge: 4.9nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Mounting: SMD
Case: TUMT6
Kind of package: reel; tape
Power dissipation: 1W
Type of transistor: P-MOSFET
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Drain-source voltage: -20V
On-state resistance: 0.25Ω
Drain current: -2A
Polarisation: unipolar
Gate charge: 4.9nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTL035N03TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Case: TUMT6
Polarisation: unipolar
Pulsed drain current: 14A
Power dissipation: 1W
Gate charge: 4.6nC
Drain current: 3.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 79mΩ
Gate-source voltage: ±12V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Case: TUMT6
Polarisation: unipolar
Pulsed drain current: 14A
Power dissipation: 1W
Gate charge: 4.6nC
Drain current: 3.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 79mΩ
Gate-source voltage: ±12V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTQ025P02FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTQ035P02FHATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTR020N05HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
RTR020N05HZGTL SMD N channel transistors
RTR020N05HZGTL SMD N channel transistors
Produkt ist nicht verfügbar
| RTR020N05TL |
|
Hersteller: ROHM SEMICONDUCTOR
RTR020N05TL SMD N channel transistors
RTR020N05TL SMD N channel transistors
Produkt ist nicht verfügbar
| RTR020P02FRATL |
Hersteller: ROHM SEMICONDUCTOR
RTR020P02FRATL SMD P channel transistors
RTR020P02FRATL SMD P channel transistors
Produkt ist nicht verfügbar
| RTR025N03HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RTR025P02FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar