Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103490) > Seite 1722 nach 1725
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BU4927FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Type of integrated circuit: supervisor circuit Mounting: SMD Number of channels: 1 Case: VSOP5 Operating temperature: -40...125°C Kind of package: reel; tape Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Threshold on-voltage: 2.7V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC |
Produkt ist nicht verfügbar |
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BU4940FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Type of integrated circuit: supervisor circuit Mounting: SMD Number of channels: 1 Case: VSOP5 Operating temperature: -40...125°C Kind of package: reel; tape Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Threshold on-voltage: 4V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC |
Produkt ist nicht verfügbar |
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RB751CM-40T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD923 Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB751CS-40FHT2RA | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SOD923 Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB751SM-40FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB751SM-40T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Leakage current: 0.5µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB521SM-30FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.47V Leakage current: 30µA Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB521SM-60T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 60V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 60V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Leakage current: 0.1mA Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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RB521CM-30T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Max. forward voltage: 0.35V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 0.5A Leakage current: 10µA Case: SOD923 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
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RB521CS-30FHT2RA | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Max. forward voltage: 0.35V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 0.5A Leakage current: 10µA Case: SOD923 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
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RB521SM-40FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.54V Leakage current: 90µA Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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TFZVTR15B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 0.2µA |
Produkt ist nicht verfügbar |
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SCT3080ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
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SCT3080ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Drain-source voltage: 650V Drain current: 30A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 134W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 48nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...22V Pulsed drain current: 75A Mounting: THT Case: TO247-4 |
Produkt ist nicht verfügbar |
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BD2232G-GTR | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Case: SSOP5 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC On-state resistance: 0.1Ω Output current: 1.3A Kind of output: N-Channel Active logical level: high |
Produkt ist nicht verfügbar |
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RUR040N02TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX17T116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
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SP8K32HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD Polarisation: unipolar Drain-source voltage: 60V Kind of package: reel; tape Version: ESD Gate charge: 7nC Case: SOP8 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 18A Type of transistor: N-MOSFET x2 Mounting: SMD On-state resistance: 77mΩ Power dissipation: 2W Drain current: 4.5A |
auf Bestellung 2338 Stücke: Lieferzeit 14-21 Tag (e) |
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SP8K33FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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SP8K33HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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BA25DD0WHFP-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1% Case: HRP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Output voltage: 2.5V Output current: 2A Voltage drop: 0.7V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...25V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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RB551VM-30TE-17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323F; SMD; 20V; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 20V Semiconductor structure: single diode Max. forward voltage: 0.47V Leakage current: 0.1mA Max. forward impulse current: 2A Kind of package: reel; tape |
auf Bestellung 2706 Stücke: Lieferzeit 14-21 Tag (e) |
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RB551VM-40FHTE-17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SOD323F Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.43V Leakage current: 0.3mA Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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2SC5659T2LP | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 25V; 50mA; 150mW; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 50mA Power dissipation: 0.15W Case: SOT723 Current gain: 82...180 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
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SMLMN2BCTT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; blue; SMD; 0805; 36mcd; 5mA; 470nm; Lens: transparent Type of diode: LED LED colour: blue Mounting: SMD Case: 0805 Luminosity: 36mcd LED current: 5mA Wavelength: 470nm LED lens: transparent Front: flat |
Produkt ist nicht verfügbar |
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SML-D12P8WT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: green Mounting: SMD Case: 0603 Luminosity: 2.5...6.3mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ |
Produkt ist nicht verfügbar |
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SLR-332DC3F | ROHM SEMICONDUCTOR |
![]() Description: LED; orange; 16mcd; 85°; Front: convex Type of diode: LED LED colour: orange Luminosity: 16mcd Viewing angle: 85° Wavelength: 605nm LED lens: diffused; transparent LED current: 10mA Mounting: THT Front: convex |
Produkt ist nicht verfügbar |
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SLR-332DCT32 | ROHM SEMICONDUCTOR |
![]() Description: LED; orange; 16mcd; 85°; Front: convex Type of diode: LED LED colour: orange Luminosity: 16mcd Viewing angle: 85° Wavelength: 610nm LED lens: transparent LED current: 10mA Mounting: THT Front: convex |
Produkt ist nicht verfügbar |
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SLR-332DU3F | ROHM SEMICONDUCTOR |
![]() Description: LED; orange; 10mcd; 85°; Front: convex Type of diode: LED LED colour: orange Luminosity: 10mcd Viewing angle: 85° Wavelength: 610nm LED lens: diffused LED current: 10mA Mounting: THT Front: convex |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SCT3060ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Power dissipation: 165W Case: TO247 On-state resistance: 60mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SCT3120ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3017ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3017ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3022ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3030ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3030ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3030AW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3060ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 97A Power dissipation: 165W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3060ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 97A Power dissipation: 165W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SCT3060AW7TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 95A Power dissipation: 159W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RFN20NS6SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 20A Reverse recovery time: 60ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RFN20NS6STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 20A Reverse recovery time: 60ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RF505BM6SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
RF505BM6STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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KDZVTR2.4B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Kind of package: reel; tape Zener voltage: 2.4V Power dissipation: 1W Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.2mA Tolerance: ±2% Case: SOD123F Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KDZVTFTR2.4B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA Kind of package: reel; tape Zener voltage: 2.4V Power dissipation: 1W Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.2mA Case: SOD123F Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84C4V7LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Application: automotive industry |
Produkt ist nicht verfügbar |
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DTD123YKFRAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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DTD123YKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SCS306AMC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.71V Max. forward impulse current: 170A Kind of package: tube Max. load current: 22A Leakage current: 120µA Power dissipation: 30W Technology: SiC |
Produkt ist nicht verfügbar |
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MSL0104RGBU1 | ROHM SEMICONDUCTOR |
![]() Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA Case: 2709 Mounting: SMD Operating voltage: 2.1/3.3/3.2V DC LED colour: RGB Wavelength: 465...475nm; 520...535nm; 619...629nm Luminosity of green colour: 710...1200mcd Luminosity of red colour: 450...700mcd Luminosity of blue colour: 220...400mcd LED current: 20mA LED version: angular; tricolour Dimensions: 6.9x2.2x2.15mm Front: flat Type of diode: LED |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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BD45292G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Kind of package: reel; tape Case: SSOP5 Mounting: SMD Manufacturer series: BD45 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: Counter Timer Built-in Threshold on-voltage: 2.9V Kind of integrated circuit: voltage detector Operating temperature: -40...105°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
BD4942G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD49 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTA114YCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTC113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTC115ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 82 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DTC124XCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BU4927FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Mounting: SMD
Number of channels: 1
Case: VSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 2.7V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Mounting: SMD
Number of channels: 1
Case: VSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 2.7V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU4940FVE-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Mounting: SMD
Number of channels: 1
Case: VSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Mounting: SMD
Number of channels: 1
Case: VSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751CM-40T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751CS-40FHT2RA |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751SM-40FHT2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB751SM-40T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Leakage current: 0.5µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB521SM-30FHT2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB521SM-60T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 60V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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RB521CM-30T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Max. forward voltage: 0.35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Leakage current: 10µA
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Max. forward voltage: 0.35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Leakage current: 10µA
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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RB521CS-30FHT2RA |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Max. forward voltage: 0.35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Leakage current: 10µA
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Max. forward voltage: 0.35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Leakage current: 10µA
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB521SM-40FHT2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TFZVTR15B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.2µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3080ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Drain-source voltage: 650V
Drain current: 30A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 134W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 48nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...22V
Pulsed drain current: 75A
Mounting: THT
Case: TO247-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD2232G-GTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SSOP5
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 0.1Ω
Output current: 1.3A
Kind of output: N-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Case: SSOP5
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
On-state resistance: 0.1Ω
Output current: 1.3A
Kind of output: N-Channel
Active logical level: high
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RUR040N02TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
98+ | 0.74 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
BCX17T116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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SP8K32HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Version: ESD
Gate charge: 7nC
Case: SOP8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 77mΩ
Power dissipation: 2W
Drain current: 4.5A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of package: reel; tape
Version: ESD
Gate charge: 7nC
Case: SOP8
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 18A
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 77mΩ
Power dissipation: 2W
Drain current: 4.5A
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
45+ | 1.61 EUR |
111+ | 0.64 EUR |
118+ | 0.61 EUR |
SP8K33FRATB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
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SP8K33HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BA25DD0WHFP-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1%
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Output voltage: 2.5V
Output current: 2A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...25V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1%
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Output voltage: 2.5V
Output current: 2A
Voltage drop: 0.7V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...25V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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RB551VM-30TE-17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 20V; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 20V; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 0.1mA
Max. forward impulse current: 2A
Kind of package: reel; tape
auf Bestellung 2706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
272+ | 0.26 EUR |
500+ | 0.14 EUR |
1819+ | 0.039 EUR |
1924+ | 0.037 EUR |
RB551VM-40FHTE-17 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Leakage current: 0.3mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Leakage current: 0.3mA
Max. forward impulse current: 1A
Kind of package: reel; tape
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2SC5659T2LP |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 150mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.15W
Case: SOT723
Current gain: 82...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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SMLMN2BCTT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue; SMD; 0805; 36mcd; 5mA; 470nm; Lens: transparent
Type of diode: LED
LED colour: blue
Mounting: SMD
Case: 0805
Luminosity: 36mcd
LED current: 5mA
Wavelength: 470nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; blue; SMD; 0805; 36mcd; 5mA; 470nm; Lens: transparent
Type of diode: LED
LED colour: blue
Mounting: SMD
Case: 0805
Luminosity: 36mcd
LED current: 5mA
Wavelength: 470nm
LED lens: transparent
Front: flat
Produkt ist nicht verfügbar
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SML-D12P8WT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Category: SMD colour LEDs
Description: LED; green; SMD; 0603; 2.5÷6.3mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0603
Luminosity: 2.5...6.3mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
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SLR-332DC3F |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 16mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 16mcd
Viewing angle: 85°
Wavelength: 605nm
LED lens: diffused; transparent
LED current: 10mA
Mounting: THT
Front: convex
Category: THT LEDs Round
Description: LED; orange; 16mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 16mcd
Viewing angle: 85°
Wavelength: 605nm
LED lens: diffused; transparent
LED current: 10mA
Mounting: THT
Front: convex
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SLR-332DCT32 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 16mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 16mcd
Viewing angle: 85°
Wavelength: 610nm
LED lens: transparent
LED current: 10mA
Mounting: THT
Front: convex
Category: THT LEDs Round
Description: LED; orange; 16mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 16mcd
Viewing angle: 85°
Wavelength: 610nm
LED lens: transparent
LED current: 10mA
Mounting: THT
Front: convex
Produkt ist nicht verfügbar
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SLR-332DU3F |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; orange; 10mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 10mcd
Viewing angle: 85°
Wavelength: 610nm
LED lens: diffused
LED current: 10mA
Mounting: THT
Front: convex
Category: THT LEDs Round
Description: LED; orange; 10mcd; 85°; Front: convex
Type of diode: LED
LED colour: orange
Luminosity: 10mcd
Viewing angle: 85°
Wavelength: 610nm
LED lens: diffused
LED current: 10mA
Mounting: THT
Front: convex
Produkt ist nicht verfügbar
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SCT3060ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Power dissipation: 165W
Case: TO247
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Power dissipation: 165W
Case: TO247
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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SCT3120ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3017ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3017ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3022ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3022ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3030AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCT3060ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
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SCT3060ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 97A; 165W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 97A
Power dissipation: 165W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Kind of package: tube
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SCT3060AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 159W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
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RFN20NS6SFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
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RFN20NS6STL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 60ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
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RF505BM6SFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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RF505BM6STL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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KDZVTR2.4B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Tolerance: ±2%
Case: SOD123F
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Tolerance: ±2%
Case: SOD123F
Mounting: SMD
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KDZVTFTR2.4B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Case: SOD123F
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 2.4V; SMD; reel,tape; SOD123F; single diode; 200uA
Kind of package: reel; tape
Zener voltage: 2.4V
Power dissipation: 1W
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.2mA
Case: SOD123F
Mounting: SMD
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BZX84C4V7LYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
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DTD123YKFRAT146 |
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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DTD123YKT146 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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SCS306AMC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.71V
Max. forward impulse current: 170A
Kind of package: tube
Max. load current: 22A
Leakage current: 120µA
Power dissipation: 30W
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 120uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.71V
Max. forward impulse current: 170A
Kind of package: tube
Max. load current: 22A
Leakage current: 120µA
Power dissipation: 30W
Technology: SiC
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MSL0104RGBU1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA
Case: 2709
Mounting: SMD
Operating voltage: 2.1/3.3/3.2V DC
LED colour: RGB
Wavelength: 465...475nm; 520...535nm; 619...629nm
Luminosity of green colour: 710...1200mcd
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
LED current: 20mA
LED version: angular; tricolour
Dimensions: 6.9x2.2x2.15mm
Front: flat
Type of diode: LED
Category: SMD colour LEDs
Description: LED; RGB; SMD; 2709; 2.1/3.3/3.2VDC; 6.9x2.2x2.15mm; 20mA
Case: 2709
Mounting: SMD
Operating voltage: 2.1/3.3/3.2V DC
LED colour: RGB
Wavelength: 465...475nm; 520...535nm; 619...629nm
Luminosity of green colour: 710...1200mcd
Luminosity of red colour: 450...700mcd
Luminosity of blue colour: 220...400mcd
LED current: 20mA
LED version: angular; tricolour
Dimensions: 6.9x2.2x2.15mm
Front: flat
Type of diode: LED
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
61+ | 1.19 EUR |
80+ | 0.9 EUR |
84+ | 0.86 EUR |
100+ | 0.84 EUR |
500+ | 0.83 EUR |
BD45292G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Threshold on-voltage: 2.9V
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Threshold on-voltage: 2.9V
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
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BD4942G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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DTA113ZCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
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DTA114YCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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DTC113ZCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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DTC115ECAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 82
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
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DTC124XCAHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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