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DTB713ZMT2L DTB713ZMT2L Rohm Semiconductor DTB713Z.pdf Description: TRANS PREBIAS PNP 150MW VMT3
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DTC614TKT146 DTC614TKT146 Rohm Semiconductor datasheet?p=DTC614TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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DTC614TUT106 DTC614TUT106 Rohm Semiconductor datasheet?p=DTC614TU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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EM6K6T2R EM6K6T2R Rohm Semiconductor datasheet?p=EM6K6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EMD4T2R EMD4T2R Rohm Semiconductor datasheet?p=EMD4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD5T2R EMD5T2R Rohm Semiconductor emd5.pdf Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
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IMD3AT108 IMD3AT108 Rohm Semiconductor datasheet?p=IMD3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
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QS5U33TR QS5U33TR Rohm Semiconductor qs5u33tr-e.pdf Description: MOSFET P-CH 30V 2A TSMT5
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RSF010P03TL RSF010P03TL Rohm Semiconductor RSF010P03.pdf Description: MOSFET P-CH 30V 1A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Produkt ist nicht verfügbar
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RSL020P03TR RSL020P03TR Rohm Semiconductor RSL020P03.pdf Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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RTR020N05TL RTR020N05TL Rohm Semiconductor Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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RTR040N03TL RTR040N03TL Rohm Semiconductor datasheet?p=RTR040N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key description Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Produkt ist nicht verfügbar
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RUE003N02TL RUE003N02TL Rohm Semiconductor RUE003N02.pdf Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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RUM003N02T2L RUM003N02T2L Rohm Semiconductor RUM003N02.pdf Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Produkt ist nicht verfügbar
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US5U3TR US5U3TR Rohm Semiconductor US5U3.pdf Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Produkt ist nicht verfügbar
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2SA1807TLP 2SA1807TLP Rohm Semiconductor 2SA1807_2SA1862.pdf Description: TRANS PNP 600V 1A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: CPT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2029T2LR 2SA2029T2LR Rohm Semiconductor 2sa1576u3t106r-e.pdf Description: TRANS PNP 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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57+0.31 EUR
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2SB1308T100R 2SB1308T100R Rohm Semiconductor 2sb1308.pdf Description: TRANS PNP 20V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SB1695KT146 2SB1695KT146 Rohm Semiconductor datasheet?p=2SB1695K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
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100+0.44 EUR
500+0.34 EUR
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2SB1698T100 2SB1698T100 Rohm Semiconductor 2SB1698 Description: TRANS PNP 30V 1.5A SOT-89
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2SB1707TL 2SB1707TL Rohm Semiconductor datasheet?p=2SB1707&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 12V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SB1710TL 2SB1710TL Rohm Semiconductor datasheet?p=2SB1710&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SC3906KT146S 2SC3906KT146S Rohm Semiconductor 2sc3906k-e.pdf Description: TRANS NPN 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
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2SD2444KT146R 2SD2444KT146R Rohm Semiconductor 2sd2444kt146r-e.pdf Description: TRANS NPN 15V 1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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2SD2657KT146 2SD2657KT146 Rohm Semiconductor 2sd2657k.pdf Description: TRANS NPN 30V 1.5A SMT3
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2SD2662T100 2SD2662T100 Rohm Semiconductor 2SD2662 Description: TRANS NPN 30V 1.5A SOT-89
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2SD2670TL 2SD2670TL Rohm Semiconductor datasheet?p=2SD2670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 12V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
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2SD2675TL 2SD2675TL Rohm Semiconductor datasheet?p=2SD2675&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
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2SD2704KT146 2SD2704KT146 Rohm Semiconductor datasheet?p=2SD2704K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
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DTA143ZMT2L DTA143ZMT2L Rohm Semiconductor datasheet?p=DTA143ZM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTB143TKT146 DTB143TKT146 Rohm Semiconductor datasheet?p=DTB143TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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DTB513ZETL DTB513ZETL Rohm Semiconductor datasheet?p=DTB513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTB713ZMT2L DTB713ZMT2L Rohm Semiconductor DTB713Z.pdf Description: TRANS PREBIAS PNP 150MW VMT3
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DTC614TKT146 DTC614TKT146 Rohm Semiconductor datasheet?p=DTC614TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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DTC614TUT106 DTC614TUT106 Rohm Semiconductor datasheet?p=DTC614TU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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EM6K6T2R EM6K6T2R Rohm Semiconductor datasheet?p=EM6K6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EMD29T2R EMD29T2R Rohm Semiconductor datasheet?p=EMD29&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.12W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
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EMD4T2R EMD4T2R Rohm Semiconductor datasheet?p=EMD4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD5T2R EMD5T2R Rohm Semiconductor emd5.pdf Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
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EMX18T2R EMX18T2R Rohm Semiconductor datasheet?p=EMX18&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN DUAL 12V 500MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
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EMZ7T2R EMZ7T2R Rohm Semiconductor datasheet?p=EMZ7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz, 260MHz
Supplier Device Package: EMT6
Part Status: Active
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IMD3AT108 IMD3AT108 Rohm Semiconductor datasheet?p=IMD3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
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RSF010P03TL RSF010P03TL Rohm Semiconductor RSF010P03.pdf Description: MOSFET P-CH 30V 1A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Produkt ist nicht verfügbar
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RSL020P03TR RSL020P03TR Rohm Semiconductor RSL020P03.pdf Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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RTR020N05TL RTR020N05TL Rohm Semiconductor Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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RTR040N03TL RTR040N03TL Rohm Semiconductor datasheet?p=RTR040N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key description Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Produkt ist nicht verfügbar
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RUE003N02TL RUE003N02TL Rohm Semiconductor RUE003N02.pdf Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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RUM003N02T2L RUM003N02T2L Rohm Semiconductor RUM003N02.pdf Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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UMX18NTN UMX18NTN Rohm Semiconductor datasheet?p=UMX18N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN DUAL 12V 500MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
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US5U3TR US5U3TR Rohm Semiconductor US5U3.pdf Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
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DTB713ZMT2L DTB713ZMT2L Rohm Semiconductor DTB713Z.pdf Description: TRANS PREBIAS PNP 150MW VMT3
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EMD5T2R EMD5T2R Rohm Semiconductor emd5.pdf Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
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MCR006YZPF1502 MCR006YZPF1502 Rohm Semiconductor mcr.pdf Description: RES SMD 15K OHM 1% 1/20W 0201
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MCR006YZPF3002 MCR006YZPF3002 Rohm Semiconductor mcr.pdf Description: RES SMD 30K OHM 1% 1/20W 0201
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MCR006YZPF1003 MCR006YZPF1003 Rohm Semiconductor mcr.pdf Description: RES SMD 100K OHM 1% 1/20W 0201
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MCR006YZPF4701 MCR006YZPF4701 Rohm Semiconductor mcr.pdf Description: RES SMD 4.7K OHM 1% 1/20W 0201
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MCR006YZPF8200 MCR006YZPF8200 Rohm Semiconductor mcr.pdf Description: RES SMD 820 OHM 1% 1/20W 0201
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MCR006YZPF4532 MCR006YZPF4532 Rohm Semiconductor mcr.pdf Description: RES SMD 45.3K OHM 1% 1/20W 0201
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TCA0G226M8R TCA0G226M8R Rohm Semiconductor tc_a.pdf Description: CAP TANT 22UF 4V 20% 1206
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TCA0G336M8R TCA0G336M8R Rohm Semiconductor tc_a.pdf Description: CAP TANT 33UF 4V 20% 1206
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DTB713ZMT2L DTB713Z.pdf
DTB713ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
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DTC614TKT146 datasheet?p=DTC614TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC614TKT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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3000+0.08 EUR
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DTC614TUT106 datasheet?p=DTC614TU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC614TUT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
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EM6K6T2R datasheet?p=EM6K6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K6T2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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EMD4T2R datasheet?p=EMD4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD4T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD5T2R emd5.pdf
EMD5T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
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IMD3AT108 datasheet?p=IMD3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMD3AT108
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
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3000+0.19 EUR
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QS5U33TR qs5u33tr-e.pdf
QS5U33TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT5
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RSF010P03TL RSF010P03.pdf
RSF010P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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RSL020P03TR RSL020P03.pdf
RSL020P03TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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3000+0.30 EUR
6000+0.28 EUR
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RTR020N05TL
RTR020N05TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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3000+0.56 EUR
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RTR040N03TL description datasheet?p=RTR040N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
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RUE003N02TL RUE003N02.pdf
RUE003N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 66000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
21000+0.10 EUR
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RUM003N02T2L RUM003N02.pdf
RUM003N02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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US5U3TR US5U3.pdf
US5U3TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
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2SA1807TLP 2SA1807_2SA1862.pdf
2SA1807TLP
Hersteller: Rohm Semiconductor
Description: TRANS PNP 600V 1A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: CPT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2029T2LR 2sa1576u3t106r-e.pdf
2SA2029T2LR
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 3839 Stücke:
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Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.11 EUR
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2SB1308T100R 2sb1308.pdf
2SB1308T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 20V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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2SB1695KT146 datasheet?p=2SB1695K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SB1695KT146
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
auf Bestellung 2822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.30 EUR
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2SB1698T100 2SB1698
2SB1698T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1.5A SOT-89
auf Bestellung 1369 Stücke:
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Anzahl Preis
19+0.97 EUR
22+0.84 EUR
100+0.62 EUR
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2SB1707TL datasheet?p=2SB1707&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SB1707TL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 12V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SB1710TL datasheet?p=2SB1710&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SB1710TL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 710 Stücke:
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Anzahl Preis
22+0.83 EUR
25+0.71 EUR
100+0.49 EUR
500+0.38 EUR
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2SC3906KT146S 2sc3906k-e.pdf
2SC3906KT146S
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
auf Bestellung 7239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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2SD2444KT146R 2sd2444kt146r-e.pdf
2SD2444KT146R
Hersteller: Rohm Semiconductor
Description: TRANS NPN 15V 1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 370 Stücke:
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Anzahl Preis
14+1.32 EUR
22+0.83 EUR
100+0.54 EUR
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2SD2657KT146 2sd2657k.pdf
2SD2657KT146
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SMT3
auf Bestellung 38 Stücke:
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Anzahl Preis
25+0.70 EUR
29+0.61 EUR
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2SD2662T100 2SD2662
2SD2662T100
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SOT-89
auf Bestellung 990 Stücke:
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2SD2670TL datasheet?p=2SD2670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SD2670TL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 12V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
auf Bestellung 5291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
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2SD2675TL datasheet?p=2SD2675&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SD2675TL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 1A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TSMT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 2987 Stücke:
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Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
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2SD2704KT146 datasheet?p=2SD2704K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SD2704KT146
Hersteller: Rohm Semiconductor
Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
auf Bestellung 21729 Stücke:
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Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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DTA143ZMT2L datasheet?p=DTA143ZM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 8874 Stücke:
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Anzahl Preis
39+0.46 EUR
63+0.28 EUR
101+0.17 EUR
500+0.13 EUR
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2000+0.10 EUR
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DTB143TKT146 datasheet?p=DTB143TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB143TKT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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DTB513ZETL datasheet?p=DTB513ZE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB513ZETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 5852 Stücke:
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Anzahl Preis
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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DTB713ZMT2L DTB713Z.pdf
DTB713ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
auf Bestellung 12624 Stücke:
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DTC614TKT146 datasheet?p=DTC614TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC614TKT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3975 Stücke:
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24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
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DTC614TUT106 datasheet?p=DTC614TU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC614TUT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 299 Stücke:
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27+0.67 EUR
33+0.55 EUR
100+0.37 EUR
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EM6K6T2R datasheet?p=EM6K6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EM6K6T2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 5176 Stücke:
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18+1.00 EUR
29+0.62 EUR
100+0.40 EUR
500+0.30 EUR
1000+0.27 EUR
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EMD29T2R datasheet?p=EMD29&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD29T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.12W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
auf Bestellung 1505 Stücke:
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19+0.97 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
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EMD4T2R datasheet?p=EMD4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD4T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 5974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.48 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.18 EUR
2000+0.17 EUR
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EMD5T2R emd5.pdf
EMD5T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
auf Bestellung 22781 Stücke:
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EMX18T2R datasheet?p=EMX18&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX18T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN DUAL 12V 500MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 9617 Stücke:
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Anzahl Preis
13+1.41 EUR
20+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
2000+0.36 EUR
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EMZ7T2R datasheet?p=EMZ7&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMZ7T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz, 260MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 7721 Stücke:
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Anzahl Preis
13+1.41 EUR
21+0.88 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.35 EUR
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IMD3AT108 datasheet?p=IMD3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMD3AT108
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
auf Bestellung 4597 Stücke:
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Anzahl Preis
21+0.84 EUR
35+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
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RSF010P03TL RSF010P03.pdf
RSF010P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Produkt ist nicht verfügbar
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RSL020P03TR RSL020P03.pdf
RSL020P03TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 8261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.52 EUR
500+0.41 EUR
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RTR020N05TL
RTR020N05TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 3779 Stücke:
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Anzahl Preis
9+2.18 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
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RTR040N03TL description datasheet?p=RTR040N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR040N03TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Produkt ist nicht verfügbar
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RUE003N02TL RUE003N02.pdf
RUE003N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 66946 Stücke:
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Anzahl Preis
26+0.69 EUR
43+0.41 EUR
100+0.26 EUR
500+0.20 EUR
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RUM003N02T2L RUM003N02.pdf
RUM003N02T2L
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 194 Stücke:
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Anzahl Preis
25+0.70 EUR
32+0.56 EUR
100+0.38 EUR
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UMX18NTN datasheet?p=UMX18N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMX18NTN
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN DUAL 12V 500MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
auf Bestellung 103 Stücke:
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Anzahl Preis
17+1.07 EUR
27+0.66 EUR
100+0.42 EUR
Mindestbestellmenge: 17
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US5U3TR US5U3.pdf
US5U3TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
auf Bestellung 2639 Stücke:
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Anzahl Preis
18+1.02 EUR
20+0.89 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
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DTB713ZMT2L DTB713Z.pdf
DTB713ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
auf Bestellung 12624 Stücke:
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EMD5T2R emd5.pdf
EMD5T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
auf Bestellung 22781 Stücke:
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MCR006YZPF1502 mcr.pdf
MCR006YZPF1502
Hersteller: Rohm Semiconductor
Description: RES SMD 15K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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MCR006YZPF3002 mcr.pdf
MCR006YZPF3002
Hersteller: Rohm Semiconductor
Description: RES SMD 30K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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MCR006YZPF1003 mcr.pdf
MCR006YZPF1003
Hersteller: Rohm Semiconductor
Description: RES SMD 100K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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MCR006YZPF4701 mcr.pdf
MCR006YZPF4701
Hersteller: Rohm Semiconductor
Description: RES SMD 4.7K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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MCR006YZPF8200 mcr.pdf
MCR006YZPF8200
Hersteller: Rohm Semiconductor
Description: RES SMD 820 OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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MCR006YZPF4532 mcr.pdf
MCR006YZPF4532
Hersteller: Rohm Semiconductor
Description: RES SMD 45.3K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
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TCA0G226M8R tc_a.pdf
TCA0G226M8R
Hersteller: Rohm Semiconductor
Description: CAP TANT 22UF 4V 20% 1206
Produkt ist nicht verfügbar
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TCA0G336M8R tc_a.pdf
TCA0G336M8R
Hersteller: Rohm Semiconductor
Description: CAP TANT 33UF 4V 20% 1206
auf Bestellung 1732 Stücke:
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