Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102210) > Seite 251 nach 1704
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MCR006YZPF8252 | Rohm Semiconductor |
 Description: RES SMD 82.5K OHM 1% 1/20W 0201 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MCR006YZPJ821 | Rohm Semiconductor |
Description: RES SMD 820 OHM 5% 1/20W 0201 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MCR006YZPF9100 | Rohm Semiconductor |
Description: RES SMD 910 OHM 1% 1/20W 0201 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MCR006YZPF9103 | Rohm Semiconductor |
Description: RES SMD 910K OHM 1% 1/20W 0201 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MCR006YZPF9102 | Rohm Semiconductor |
Description: RES SMD 91K OHM 1% 1/20W 0201 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RLS4448TE-11 | Rohm Semiconductor |
Description: DIODE GEN PURP 75V 150MA LLDS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS040P03TB | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS125N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS130N03TB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSX051VA-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 500MA TUMD2 |
auf Bestellung 11393 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSX301LA-30TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 3A PMDT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RTF020P02TL | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT3 |
auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RTU002P02T106 | Rohm Semiconductor |
Description: MOSFET P-CH 20V 0.25A SOT-323 |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8J1TB | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8J2TB | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8J3TB | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 3.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8J4TB | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 2A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8K4TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SP8K5TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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UMH6NTR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT6 |
auf Bestellung 4640 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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US6J2TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 1A TUMT6 |
auf Bestellung 8190 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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R5013ANXFU6 | Rohm Semiconductor |
Description: MOSFET N-CH 500V 13A TO-220FM |
auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDD050N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 5A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX045N60FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 4.5A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.25A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX050N50FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 500V 5A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX060N60FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 6A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX080N50FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 500V 8A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX100N60FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 10A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDX120N50FU6 | Rohm Semiconductor |
Description: MOSFET N-CH 500V 12A TO220FM Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS070N03TB1 | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 7A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS100N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS110N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS125N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS130N03TB1 | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 13A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSQ035N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS060P05FU6TB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 6A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS065N06FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 60V 6.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS070N05FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS070P05FU6TB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS085N05FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 8.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS095N05FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 9.5A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RUF015N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 1.5A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA560BD2T3F | Rohm Semiconductor |
Description: LED BLUE CLEAR T-1 3/4 T/H |
auf Bestellung 502 Stücke: Lieferzeit 10-14 Tag (e) |
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SLR343WBC7T3 | Rohm Semiconductor |
Description: LED WHITE CLEAR T-1 T/H |
auf Bestellung 1009 Stücke: Lieferzeit 10-14 Tag (e) |
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SML022BUTT86 | Rohm Semiconductor |
Description: LED BLUE/RED CLEAR 1210 SMD Packaging: Tape & Reel (TR) Package / Case: 1210 (3225 Metric) Color: Blue, Red Size / Dimension: 3.00mm L x 2.50mm W Mounting Type: Surface Mount Millicandela Rating: 140mcd Blue, 220mcd Red Configuration: Independent Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red Lens Color: Colorless Current - Test: 20mA Blue, 20mA Red Height (Max): 1.50mm Wavelength - Dominant: 470nm Blue, 624nm Red Supplier Device Package: 1210 (3025 Metric) Lens Transparency: Clear Part Status: Obsolete Lens Style: Rectangle with Flat Top Lens Size: 2.30mm x 2.10mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RDD050N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 5A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS070N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS110N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS125N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS130N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 13A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Supplier Device Package: 8-SOP Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSQ035N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
auf Bestellung 2079 Stücke: Lieferzeit 10-14 Tag (e) |
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RSS060P05FU6TB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 6A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS070P05FU6TB | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS085N05FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 8.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RSS095N05FU6TB | Rohm Semiconductor |
Description: MOSFET N-CH 45V 9.5A 8SOP |
auf Bestellung 1745 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RUF015N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 1.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
auf Bestellung 16402 Stücke: Lieferzeit 10-14 Tag (e) |
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SML022BUTT86 | Rohm Semiconductor |
Description: LED BLUE/RED CLEAR 1210 SMD Packaging: Cut Tape (CT) Package / Case: 1210 (3225 Metric) Color: Blue, Red Size / Dimension: 3.00mm L x 2.50mm W Mounting Type: Surface Mount Millicandela Rating: 140mcd Blue, 220mcd Red Configuration: Independent Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red Lens Color: Colorless Current - Test: 20mA Blue, 20mA Red Height (Max): 1.50mm Wavelength - Dominant: 470nm Blue, 624nm Red Supplier Device Package: 1210 (3025 Metric) Lens Transparency: Clear Part Status: Obsolete Lens Style: Rectangle with Flat Top Lens Size: 2.30mm x 2.10mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RRS125N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SLC-22VR3F | Rohm Semiconductor |
Description: LED RED DIFF 2MM ROUND T/H |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SLC-22DU3F | Rohm Semiconductor |
Description: LED ORANGE DIFF 2MM ROUND T/H |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCR006YZPF8252 |
|
Hersteller: Rohm Semiconductor
Description: RES SMD 82.5K OHM 1% 1/20W 0201
Description: RES SMD 82.5K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR006YZPJ821 |
|
Hersteller: Rohm Semiconductor
Description: RES SMD 820 OHM 5% 1/20W 0201
Description: RES SMD 820 OHM 5% 1/20W 0201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR006YZPF9100 |
|
Hersteller: Rohm Semiconductor
Description: RES SMD 910 OHM 1% 1/20W 0201
Description: RES SMD 910 OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR006YZPF9103 |
|
Hersteller: Rohm Semiconductor
Description: RES SMD 910K OHM 1% 1/20W 0201
Description: RES SMD 910K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCR006YZPF9102 |
|
Hersteller: Rohm Semiconductor
Description: RES SMD 91K OHM 1% 1/20W 0201
Description: RES SMD 91K OHM 1% 1/20W 0201
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RLS4448TE-11 |
|
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 75V 150MA LLDS
Description: DIODE GEN PURP 75V 150MA LLDS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS040P03TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A 8-SOIC
Description: MOSFET P-CH 30V 4A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS125N03TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS130N03TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8-SOIC
Description: MOSFET N-CH 30V 13A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSX051VA-30TR |
|
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 500MA TUMD2
Description: DIODE SCHOTTKY 30V 500MA TUMD2
auf Bestellung 11393 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RSX301LA-30TR |
|
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDT
Description: DIODE SCHOTTKY 30V 3A PMDT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RTF020P02TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT3
Description: MOSFET P-CH 20V 2A TUMT3
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RTU002P02T106 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 0.25A SOT-323
Description: MOSFET P-CH 20V 0.25A SOT-323
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SP8J1TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A 8-SOIC
Description: MOSFET 2P-CH 30V 5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8J2TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8J3TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 3.5A 8-SOIC
Description: MOSFET 2P-CH 30V 3.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8J4TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 2A 8-SOIC
Description: MOSFET 2P-CH 30V 2A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8K4TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A 8-SOIC
Description: MOSFET 2N-CH 30V 9A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SP8K5TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UMH6NTR |
|
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Description: TRANS 2NPN PREBIAS 0.15W UMT6
auf Bestellung 4640 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| US6J2TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1A TUMT6
Description: MOSFET 2P-CH 20V 1A TUMT6
auf Bestellung 8190 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| R5013ANXFU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 13A TO-220FM
Description: MOSFET N-CH 500V 13A TO-220FM
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RDD050N20TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX045N60FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 4.5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.25A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX050N50FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX060N60FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 600V 6A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX080N50FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX100N60FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 10A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDX120N50FU6 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 12A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS070N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS100N03TB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS110N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS125N03TB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS130N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSQ035N03TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS060P05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 6A 8-SOIC
Description: MOSFET P-CH 45V 6A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS065N06FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS070N05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS070P05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS085N05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 8.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Description: MOSFET N-CH 45V 8.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS095N05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 9.5A 8SOP
Description: MOSFET N-CH 45V 9.5A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RUF015N02TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| SLA560BD2T3F |
|
Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR T-1 3/4 T/H
Description: LED BLUE CLEAR T-1 3/4 T/H
auf Bestellung 502 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.57 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.11 EUR |
| SLR343WBC7T3 |
|
Hersteller: Rohm Semiconductor
Description: LED WHITE CLEAR T-1 T/H
Description: LED WHITE CLEAR T-1 T/H
auf Bestellung 1009 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 16+ | 1.16 EUR |
| 100+ | 0.76 EUR |
| 1000+ | 0.6 EUR |
| SML022BUTT86 |
|
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED CLEAR 1210 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1210 (3225 Metric)
Color: Blue, Red
Size / Dimension: 3.00mm L x 2.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd Blue, 220mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red
Lens Color: Colorless
Current - Test: 20mA Blue, 20mA Red
Height (Max): 1.50mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Supplier Device Package: 1210 (3025 Metric)
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 2.30mm x 2.10mm
Description: LED BLUE/RED CLEAR 1210 SMD
Packaging: Tape & Reel (TR)
Package / Case: 1210 (3225 Metric)
Color: Blue, Red
Size / Dimension: 3.00mm L x 2.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd Blue, 220mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red
Lens Color: Colorless
Current - Test: 20mA Blue, 20mA Red
Height (Max): 1.50mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Supplier Device Package: 1210 (3025 Metric)
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 2.30mm x 2.10mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RDD050N20TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Description: MOSFET N-CH 200V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS070N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS110N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Description: MOSFET N-CH 30V 11A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS125N03TB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS130N03TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSQ035N03TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 2079 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| RSS060P05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 6A 8-SOIC
Description: MOSFET P-CH 45V 6A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS070P05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Description: MOSFET P-CH 45V 7A 8SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS085N05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 8.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Description: MOSFET N-CH 45V 8.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.5A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS095N05FU6TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 9.5A 8SOP
Description: MOSFET N-CH 45V 9.5A 8SOP
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| RUF015N02TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 16402 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.32 EUR |
| SML022BUTT86 |
|
Hersteller: Rohm Semiconductor
Description: LED BLUE/RED CLEAR 1210 SMD
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Color: Blue, Red
Size / Dimension: 3.00mm L x 2.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd Blue, 220mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red
Lens Color: Colorless
Current - Test: 20mA Blue, 20mA Red
Height (Max): 1.50mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Supplier Device Package: 1210 (3025 Metric)
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 2.30mm x 2.10mm
Description: LED BLUE/RED CLEAR 1210 SMD
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Color: Blue, Red
Size / Dimension: 3.00mm L x 2.50mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd Blue, 220mcd Red
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.2V Blue, 2V Red
Lens Color: Colorless
Current - Test: 20mA Blue, 20mA Red
Height (Max): 1.50mm
Wavelength - Dominant: 470nm Blue, 624nm Red
Supplier Device Package: 1210 (3025 Metric)
Lens Transparency: Clear
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 2.30mm x 2.10mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RRS125N03TB1 |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SLC-22VR3F |
|
Hersteller: Rohm Semiconductor
Description: LED RED DIFF 2MM ROUND T/H
Description: LED RED DIFF 2MM ROUND T/H
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SLC-22DU3F |
|
Hersteller: Rohm Semiconductor
Description: LED ORANGE DIFF 2MM ROUND T/H
Description: LED ORANGE DIFF 2MM ROUND T/H
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH