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BU7462FVM-TR BU7462FVM-TR Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8MSOP
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BU7462SF-E2 BU7462SF-E2 Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8SOP
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BU7462SFVM-TR BU7462SFVM-TR Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8MSOP
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BU7442F-E2 BU7442F-E2 Rohm Semiconductor bu7441g-e.pdf Description: IC OPAMP GP 600KHZ 8SOP
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BU7442FVM-TR BU7442FVM-TR Rohm Semiconductor bu7441g-e.pdf Description: IC OPAMP GP 600KHZ 8MSOP
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BU7442SF-E2 BU7442SF-E2 Rohm Semiconductor bu7441g-e.pdf Description: IC OPAMP GP 600KHZ 8SOP
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BU7442SFVM-TR BU7442SFVM-TR Rohm Semiconductor bu7441g-e.pdf Description: IC OPAMP GP 600KHZ 8MSOP
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BU7462F-E2 BU7462F-E2 Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8SOP
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BU7462FVM-TR BU7462FVM-TR Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8MSOP
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BU7462SF-E2 BU7462SF-E2 Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8SOP
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BU7462SFVM-TR BU7462SFVM-TR Rohm Semiconductor bu7461sg-e.pdf Description: IC OPAMP GP 1MHZ 8MSOP
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BD2041AFJ-E2 BD2041AFJ-E2 Rohm Semiconductor bd2041afj-e.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2042AFJ-E2 BD2042AFJ-E2 Rohm Semiconductor bd6512f-e.pdf Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2045AFJ-E2 BD2045AFJ-E2 Rohm Semiconductor BD2045AFJ_BD2055AFJ.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
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BD2046AFJ-E2 BD2046AFJ-E2 Rohm Semiconductor ul94_bd2046afj-e2-e.pdf Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2051AFJ-E2 BD2051AFJ-E2 Rohm Semiconductor datasheet?p=BD2051AFJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD2052AFJ-E2 BD2052AFJ-E2 Rohm Semiconductor bd6512f-e.pdf Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2055AFJ-E2 BD2055AFJ-E2 Rohm Semiconductor BD2045AFJ_BD2055AFJ.pdf Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD6516F-E2 BD6516F-E2 Rohm Semiconductor bd6512f-e.pdf Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
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BD6517F-E2 BD6517F-E2 Rohm Semiconductor bd6512f-e.pdf Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
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BR24L01AFVT-WE2 BR24L01AFVT-WE2 Rohm Semiconductor datasheet?p=BR24L01AFVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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BR24L04FVT-WE2 BR24L04FVT-WE2 Rohm Semiconductor datasheet?p=BR24L04FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 4KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR24L08FVT-WE2 BR24L08FVT-WE2 Rohm Semiconductor datasheet?p=BR24L08FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 8KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
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BR24L16FVT-WE2 BR24L16FVT-WE2 Rohm Semiconductor datasheet?p=BR24L16FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR24L32FVT-WE2 BR24L32FVT-WE2 Rohm Semiconductor datasheet?p=BR24L32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
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BR24L64FJ-WE2 BR24L64FJ-WE2 Rohm Semiconductor datasheet?p=BR24L64FJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
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BR24S128FVT-WE2 BR24S128FVT-WE2 Rohm Semiconductor br24sxxx-w-e.pdf Description: IC EEPROM 128K 400KHZ 8TSSOP-B
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BR24S256FJ-WE2 BR24S256FJ-WE2 Rohm Semiconductor br24sxxx-w-e.pdf Description: IC EEPROM 256KBIT I2C 8SOPJ
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BR93L56FVT-WE2 BR93L56FVT-WE2 Rohm Semiconductor br93lxx-w-e.pdf Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
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BR93L66FVT-WE2 BR93L66FVT-WE2 Rohm Semiconductor br93lxx-w-e.pdf Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
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BR93L86FJ-WE2 BR93L86FJ-WE2 Rohm Semiconductor datasheet?p=BR93L86FJ-W&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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EM5K5T2R EM5K5T2R Rohm Semiconductor Description: MOSFET 2N-CH 30V 0.3A EMT5
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EM6M1T2R EM6M1T2R Rohm Semiconductor EM6M1.pdf Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
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QS6K21TR QS6K21TR Rohm Semiconductor datasheet?p=QS6K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
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RRL025P03TR RRL025P03TR Rohm Semiconductor RRL025P03.pdf Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
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RRQ045P03TR RRQ045P03TR Rohm Semiconductor datasheet?p=RRQ045P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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RRR030P03TL RRR030P03TL Rohm Semiconductor Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
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3000+0.33 EUR
6000+0.31 EUR
9000+0.29 EUR
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RSQ020N03TR RSQ020N03TR Rohm Semiconductor rsq020n03tr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
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RSR030N06TL RSR030N06TL Rohm Semiconductor rsr030n06tl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
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RTR011P02TL RTR011P02TL Rohm Semiconductor Description: MOSFET P-CH 20V 1.1A TSMT3
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RTR025N05TL RTR025N05TL Rohm Semiconductor Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
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RTR030N05TL RTR030N05TL Rohm Semiconductor datasheet?p=RTR030N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
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RUE002N02TL RUE002N02TL Rohm Semiconductor datasheet?p=RUE002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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RUF025N02TL RUF025N02TL Rohm Semiconductor datasheet?p=RUF025N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
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RUL035N02TR RUL035N02TR Rohm Semiconductor rul035n02.pdf Description: MOSFET N-CH 20V 3.5A TUMT6
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RUQ050N02TR RUQ050N02TR Rohm Semiconductor datasheet?p=RUQ050N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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RUR040N02TL RUR040N02TL Rohm Semiconductor datasheet?p=RUR040N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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RVQ040N05TR RVQ040N05TR Rohm Semiconductor datasheet?p=RVQ040N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
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RZL025P01TR RZL025P01TR Rohm Semiconductor RZL025P01.pdf Description: MOSFET P-CH 12V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Produkt ist nicht verfügbar
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RZL035P01TR RZL035P01TR Rohm Semiconductor RZL035P01.pdf Description: MOSFET P-CH 12V 3.5A TUMT6
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RZQ050P01TR RZQ050P01TR Rohm Semiconductor RZQ050P01_Rev002_4-6-17.pdf Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
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RZR025P01TL RZR025P01TL Rohm Semiconductor RSR025N03TL_1.jpg Description: MOSFET P-CH 12V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
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RZR040P01TL RZR040P01TL Rohm Semiconductor RSR025N03TL_1.jpg Description: MOSFET P-CH 12V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
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US6K4TR US6K4TR Rohm Semiconductor datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
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BD6512F-E2 BD6512F-E2 Rohm Semiconductor bd6512f-e.pdf description Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
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BD6513F-E2 BD6513F-E2 Rohm Semiconductor bd6512f-e.pdf description Description: IC SWITCH HIGH SIDE 2CH SOP-8
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BR24S128FVT-WE2 BR24S128FVT-WE2 Rohm Semiconductor br24sxxx-w-e.pdf Description: IC EEPROM 128K 400KHZ 8TSSOP-B
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BR93L56FVT-WE2 BR93L56FVT-WE2 Rohm Semiconductor br93lxx-w-e.pdf Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
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BR93L66FVT-WE2 BR93L66FVT-WE2 Rohm Semiconductor br93lxx-w-e.pdf Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
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RTR011P02TL RTR011P02TL Rohm Semiconductor Description: MOSFET P-CH 20V 1.1A TSMT3
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BU7462FVM-TR bu7461sg-e.pdf
BU7462FVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8MSOP
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BU7462SF-E2 bu7461sg-e.pdf
BU7462SF-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8SOP
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BU7462SFVM-TR bu7461sg-e.pdf
BU7462SFVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8MSOP
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BU7442F-E2 bu7441g-e.pdf
BU7442F-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 600KHZ 8SOP
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BU7442FVM-TR bu7441g-e.pdf
BU7442FVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 600KHZ 8MSOP
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BU7442SF-E2 bu7441g-e.pdf
BU7442SF-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 600KHZ 8SOP
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BU7442SFVM-TR bu7441g-e.pdf
BU7442SFVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 600KHZ 8MSOP
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BU7462F-E2 bu7461sg-e.pdf
BU7462F-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8SOP
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BU7462FVM-TR bu7461sg-e.pdf
BU7462FVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8MSOP
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BU7462SF-E2 bu7461sg-e.pdf
BU7462SF-E2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8SOP
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BU7462SFVM-TR bu7461sg-e.pdf
BU7462SFVM-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1MHZ 8MSOP
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BD2041AFJ-E2 bd2041afj-e.pdf
BD2041AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2042AFJ-E2 bd6512f-e.pdf
BD2042AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2045AFJ-E2 BD2045AFJ_BD2055AFJ.pdf
BD2045AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
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BD2046AFJ-E2 ul94_bd2046afj-e2-e.pdf
BD2046AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2051AFJ-E2 datasheet?p=BD2051AFJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2051AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
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BD2052AFJ-E2 bd6512f-e.pdf
BD2052AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BD2055AFJ-E2 BD2045AFJ_BD2055AFJ.pdf
BD2055AFJ-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BD6516F-E2 bd6512f-e.pdf
BD6516F-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Produkt ist nicht verfügbar
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BD6517F-E2 bd6512f-e.pdf
BD6517F-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
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BR24L01AFVT-WE2 datasheet?p=BR24L01AFVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L01AFVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.65 EUR
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BR24L04FVT-WE2 datasheet?p=BR24L04FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L04FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR24L08FVT-WE2 datasheet?p=BR24L08FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L08FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR24L16FVT-WE2 datasheet?p=BR24L16FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L16FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BR24L32FVT-WE2 datasheet?p=BR24L32FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L32FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
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Anzahl Preis
3000+1.13 EUR
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BR24L64FJ-WE2 datasheet?p=BR24L64FJ-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24L64FJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+2.00 EUR
5000+1.93 EUR
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BR24S128FVT-WE2 br24sxxx-w-e.pdf
BR24S128FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
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BR24S256FJ-WE2 br24sxxx-w-e.pdf
BR24S256FJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8SOPJ
Produkt ist nicht verfügbar
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BR93L56FVT-WE2 br93lxx-w-e.pdf
BR93L56FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
Produkt ist nicht verfügbar
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BR93L66FVT-WE2 br93lxx-w-e.pdf
BR93L66FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
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BR93L86FJ-WE2 datasheet?p=BR93L86FJ-W&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BR93L86FJ-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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EM5K5T2R
EM5K5T2R
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 0.3A EMT5
auf Bestellung 8000 Stücke:
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EM6M1T2R EM6M1.pdf
EM6M1T2R
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
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QS6K21TR datasheet?p=QS6K21&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6K21TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.35 EUR
Mindestbestellmenge: 3000
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RRL025P03TR RRL025P03.pdf
RRL025P03TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
Mindestbestellmenge: 3000
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RRQ045P03TR datasheet?p=RRQ045P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRQ045P03TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Produkt ist nicht verfügbar
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RRR030P03TL
RRR030P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.31 EUR
9000+0.29 EUR
Mindestbestellmenge: 3000
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RSQ020N03TR rsq020n03tr-e.pdf
RSQ020N03TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Produkt ist nicht verfügbar
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RSR030N06TL rsr030n06tl-e.pdf
RSR030N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
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RTR011P02TL
RTR011P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.1A TSMT3
auf Bestellung 3000 Stücke:
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RTR025N05TL
RTR025N05TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.36 EUR
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RTR030N05TL datasheet?p=RTR030N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RTR030N05TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.31 EUR
9000+0.28 EUR
Mindestbestellmenge: 3000
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RUE002N02TL datasheet?p=RUE002N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUE002N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
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RUF025N02TL datasheet?p=RUF025N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUF025N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.33 EUR
Mindestbestellmenge: 3000
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RUL035N02TR rul035n02.pdf
RUL035N02TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6
Produkt ist nicht verfügbar
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RUQ050N02TR datasheet?p=RUQ050N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUQ050N02TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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RUR040N02TL datasheet?p=RUR040N02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUR040N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.40 EUR
6000+0.37 EUR
9000+0.36 EUR
15000+0.35 EUR
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RVQ040N05TR datasheet?p=RVQ040N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RVQ040N05TR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.44 EUR
Mindestbestellmenge: 3000
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RZL025P01TR RZL025P01.pdf
RZL025P01TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Produkt ist nicht verfügbar
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RZL035P01TR RZL035P01.pdf
RZL035P01TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RZQ050P01TR RZQ050P01_Rev002_4-6-17.pdf
RZQ050P01TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Produkt ist nicht verfügbar
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RZR025P01TL RSR025N03TL_1.jpg
RZR025P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.30 EUR
Mindestbestellmenge: 3000
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RZR040P01TL RSR025N03TL_1.jpg
RZR040P01TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Produkt ist nicht verfügbar
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US6K4TR datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
US6K4TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.40 EUR
6000+0.37 EUR
Mindestbestellmenge: 3000
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BD6512F-E2 description bd6512f-e.pdf
BD6512F-E2
Hersteller: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
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BD6513F-E2 description bd6512f-e.pdf
BD6513F-E2
Hersteller: Rohm Semiconductor
Description: IC SWITCH HIGH SIDE 2CH SOP-8
auf Bestellung 2330 Stücke:
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BR24S128FVT-WE2 br24sxxx-w-e.pdf
BR24S128FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
auf Bestellung 6649 Stücke:
Lieferzeit 10-14 Tag (e)
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BR93L56FVT-WE2 br93lxx-w-e.pdf
BR93L56FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
auf Bestellung 3074 Stücke:
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BR93L66FVT-WE2 br93lxx-w-e.pdf
BR93L66FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
Produkt ist nicht verfügbar
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RTR011P02TL
RTR011P02TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.1A TSMT3
Produkt ist nicht verfügbar
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