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2SA1576UBTLR 2SA1576UBTLR Rohm Semiconductor 2SA1576UB.pdf Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SAR523UBTL 2SAR523UBTL Rohm Semiconductor datasheet?p=2SAR523UB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 50V 0.1A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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2SC4081UBTLR 2SC4081UBTLR Rohm Semiconductor datasheet?p=2SC4081UB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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2SC4617EBTLQ 2SC4617EBTLQ Rohm Semiconductor datasheet?p=2SC4617EB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SC4617EBTLR 2SC4617EBTLR Rohm Semiconductor datasheet?p=2SC4617EB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SCR523UBTL 2SCR523UBTL Rohm Semiconductor datasheet?p=2SCR523UB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 50V 0.1A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3F
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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BA8391G-TR BA8391G-TR Rohm Semiconductor ba10393f-e.pdf Description: IC COMPARATOR OPEN 5-SSOP
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BD11600NUX-E2 BD11600NUX-E2 Rohm Semiconductor datasheet?p=BD11600NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC USB SWITCH DPDT 10-VSON
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
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BH1730FVC-TR BH1730FVC-TR Rohm Semiconductor datasheet?p=BH1730FVC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OPT 600NM AMBIENT 6WSOF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Lead Exposed Pad
Wavelength: 600nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 6-WSOF
Proximity Detection: No
Part Status: Active
Produkt ist nicht verfügbar
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BR24T02FVM-WTR BR24T02FVM-WTR Rohm Semiconductor br24t02-w-e.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
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BR24T16FVM-WTR BR24T16FVM-WTR Rohm Semiconductor datasheet?p=BR24T16FVM-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-MSOP
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BU18TD3WG-TR BU18TD3WG-TR Rohm Semiconductor datasheet?p=BU18TD3WG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
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DAN222WMTL DAN222WMTL Rohm Semiconductor datasheet?p=DAN222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA EMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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DTC043ZMT2L DTC043ZMT2L Rohm Semiconductor datasheet?p=DTC043ZM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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EDZVT2R15B EDZVT2R15B Rohm Semiconductor datasheet?p=EDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 15V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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EDZVT2R16B EDZVT2R16B Rohm Semiconductor datasheet?p=EDZV16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 16V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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EDZVT2R18B EDZVT2R18B Rohm Semiconductor datasheet?p=EDZV18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 18V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
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EDZVT2R3.6B EDZVT2R3.6B Rohm Semiconductor datasheet?p=EDZV3.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 3.6V 150MW EMD2
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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EDZVT2R5.1B EDZVT2R5.1B Rohm Semiconductor datasheet?p=EDZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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EDZVT2R5.6B EDZVT2R5.6B Rohm Semiconductor datasheet?p=EDZV5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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EDZVT2R6.2B EDZVT2R6.2B Rohm Semiconductor datasheet?p=EDZV6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.2V 150MW EMD2
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 150 mW
Supplier Device Package: EMD2
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EDZVT2R6.8B EDZVT2R6.8B Rohm Semiconductor datasheet?p=EDZV6.8B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.8V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
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EDZVT2R7.5B EDZVT2R7.5B Rohm Semiconductor datasheet?p=EDZV7.5B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 7.5V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
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EDZVT2R9.1B EDZVT2R9.1B Rohm Semiconductor datasheet?p=EDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 9.1V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
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QS8J4TR QS8J4TR Rohm Semiconductor datasheet?p=QS8J4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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RAF040P01TCL RAF040P01TCL Rohm Semiconductor datasheet?p=RAF040P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
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RB168M-40TR RB168M-40TR Rohm Semiconductor datasheet?p=RB168M-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 1A PMDU
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Produkt ist nicht verfügbar
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RB501VM-40TE-17 RB501VM-40TE-17 Rohm Semiconductor datasheet?p=RB501VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
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RB520SM-30T2R RB520SM-30T2R Rohm Semiconductor datasheet?p=RB520SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA EMD2
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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RB521SM-30T2R RB521SM-30T2R Rohm Semiconductor datasheet?p=RB521SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA EMD2
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
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RB521SM-40T2R RB521SM-40T2R Rohm Semiconductor datasheet?p=RB521SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA EMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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RB751SM-40T2R RB751SM-40T2R Rohm Semiconductor datasheet?p=RB751SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 30MA SC79
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-79
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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RB751VM-40TE-17 RB751VM-40TE-17 Rohm Semiconductor datasheet?p=RB751VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 30MA UMD2
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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RBQ10B65ATL RBQ10B65ATL Rohm Semiconductor rbq10b65a.pdf Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
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RQ1E070RPTR RQ1E070RPTR Rohm Semiconductor datasheet?p=RQ1E070RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 7A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
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RRF015P03TL RRF015P03TL Rohm Semiconductor datasheet?p=RRF015P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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RRL035P03TR RRL035P03TR Rohm Semiconductor datasheet?p=RRL035P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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RSD100N10TL RSD100N10TL Rohm Semiconductor rsd100n10.pdf Description: MOSFET N-CH 100V 10A CPT3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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RSD140P06TL RSD140P06TL Rohm Semiconductor rsd140p06.pdf Description: MOSFET P-CH 60V 14A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RSE002N06TL RSE002N06TL Rohm Semiconductor Description: MOSFET N-CH 60V 250MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Produkt ist nicht verfügbar
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RSU002N06T106 RSU002N06T106 Rohm Semiconductor RSU002N06.pdf Description: MOSFET N-CH 60V 250MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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RU1C001UNTCL RU1C001UNTCL Rohm Semiconductor datasheet?p=RU1C001UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 100MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
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RUC002N05T116 RUC002N05T116 Rohm Semiconductor datasheet?p=RUC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
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RUF020N02TL RUF020N02TL Rohm Semiconductor ruf020n02tl-e.pdf Description: MOSFET N-CH 20V 2A TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
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RUM001L02T2CL RUM001L02T2CL Rohm Semiconductor datasheet?p=RUM001L02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 100MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
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RW1A030APT2CR RW1A030APT2CR Rohm Semiconductor datasheet?p=RW1A030AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RW1C025ZPT2CR RW1C025ZPT2CR Rohm Semiconductor datasheet?p=RW1C025ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 2.5A 6WEMT
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Produkt ist nicht verfügbar
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RYM002N05T2CL RYM002N05T2CL Rohm Semiconductor datasheet?p=RYM002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 50V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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TFZGTR12B TFZGTR12B Rohm Semiconductor datasheet?p=TFZ12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 500MW TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: TUMD2
Part Status: Not For New Designs
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
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TFZGTR15B TFZGTR15B Rohm Semiconductor tfz30b.pdf Description: DIODE ZENER 15V 500MW TUMD2
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TFZGTR36B TFZGTR36B Rohm Semiconductor tfz30b.pdf Description: DIODE ZENER 36V 500MW TUMD2
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TFZGTR6.2B TFZGTR6.2B Rohm Semiconductor tfz30b.pdf Description: DIODE ZENER 6.2V 500MW TUMD2
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TFZGTR7.5B TFZGTR7.5B Rohm Semiconductor tfz30b.pdf Description: DIODE ZENER 7.5V 500MW TUMD2
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TFZGTR9.1B TFZGTR9.1B Rohm Semiconductor tfz30b.pdf Description: DIODE ZENER 9.1V 500MW TUMD2
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UDZVTE-1710B UDZVTE-1710B Rohm Semiconductor datasheet?p=UDZV10B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 10V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
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UDZVTE-1711B UDZVTE-1711B Rohm Semiconductor datasheet?p=UDZV11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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UDZVTE-1712B UDZVTE-1712B Rohm Semiconductor datasheet?p=UDZV12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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UDZVTE-1713B UDZVTE-1713B Rohm Semiconductor udzv11b.pdf Description: DIODE ZENER 13V 200MW UMD2
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UDZVTE-1715B UDZVTE-1715B Rohm Semiconductor datasheet?p=UDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 15V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 42 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
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UDZVTE-1716B UDZVTE-1716B Rohm Semiconductor datasheet?p=UDZV16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 16V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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2SA1576UBTLR 2SA1576UB.pdf
2SA1576UBTLR
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SAR523UBTL datasheet?p=2SAR523UB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR523UBTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 50V 0.1A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: UMT3F
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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2SC4081UBTLR datasheet?p=2SC4081UB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4081UBTLR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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2SC4617EBTLQ datasheet?p=2SC4617EB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4617EBTLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SC4617EBTLR datasheet?p=2SC4617EB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4617EBTLR
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SCR523UBTL datasheet?p=2SCR523UB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR523UBTL
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.1A UMT3F
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3F
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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BA8391G-TR ba10393f-e.pdf
BA8391G-TR
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR OPEN 5-SSOP
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BD11600NUX-E2 datasheet?p=BD11600NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD11600NUX-E2
Hersteller: Rohm Semiconductor
Description: IC USB SWITCH DPDT 10-VSON
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
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BH1730FVC-TR datasheet?p=BH1730FVC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1730FVC-TR
Hersteller: Rohm Semiconductor
Description: SENSOR OPT 600NM AMBIENT 6WSOF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Lead Exposed Pad
Wavelength: 600nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 6-WSOF
Proximity Detection: No
Part Status: Active
Produkt ist nicht verfügbar
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BR24T02FVM-WTR br24t02-w-e.pdf
BR24T02FVM-WTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 256 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 2Kbit
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BR24T16FVM-WTR datasheet?p=BR24T16FVM-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T16FVM-WTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8MSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-MSOP
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BU18TD3WG-TR datasheet?p=BU18TD3WG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU18TD3WG-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.6V @ 200mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-SSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
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DAN222WMTL datasheet?p=DAN222WM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DAN222WMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD3
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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42+0.5 EUR
69+0.31 EUR
125+0.17 EUR
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DTC043ZMT2L datasheet?p=DTC043ZM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC043ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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114+0.19 EUR
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EDZVT2R15B datasheet?p=EDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 9464 Stücke:
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67+0.31 EUR
110+0.19 EUR
297+0.07 EUR
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EDZVT2R16B datasheet?p=EDZV16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R16B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 23867 Stücke:
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46+0.46 EUR
70+0.3 EUR
113+0.19 EUR
500+0.12 EUR
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EDZVT2R18B datasheet?p=EDZV18B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R18B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 18V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
auf Bestellung 6448 Stücke:
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72+0.3 EUR
107+0.2 EUR
241+0.087 EUR
500+0.083 EUR
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EDZVT2R3.6B datasheet?p=EDZV3.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R3.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 3.6V 150MW EMD2
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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67+0.31 EUR
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313+0.067 EUR
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EDZVT2R5.1B datasheet?p=EDZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R5.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
auf Bestellung 62307 Stücke:
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67+0.31 EUR
114+0.18 EUR
153+0.14 EUR
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EDZVT2R5.6B datasheet?p=EDZV5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R5.6B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
auf Bestellung 3209 Stücke:
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53+0.39 EUR
87+0.24 EUR
138+0.15 EUR
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EDZVT2R6.2B datasheet?p=EDZV6.2B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 150MW EMD2
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 150 mW
Supplier Device Package: EMD2
auf Bestellung 5758 Stücke:
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72+0.3 EUR
107+0.2 EUR
241+0.087 EUR
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EDZVT2R6.8B datasheet?p=EDZV6.8B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R6.8B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.8V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 46237 Stücke:
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38+0.57 EUR
54+0.39 EUR
110+0.19 EUR
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EDZVT2R7.5B datasheet?p=EDZV7.5B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R7.5B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 20370 Stücke:
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112+0.19 EUR
164+0.13 EUR
374+0.056 EUR
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EDZVT2R9.1B datasheet?p=EDZV9.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVT2R9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 150MW EMD2
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 150 mW
Supplier Device Package: EMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 2615 Stücke:
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39+0.55 EUR
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QS8J4TR datasheet?p=QS8J4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8J4TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
auf Bestellung 2125 Stücke:
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7+3.2 EUR
11+2.03 EUR
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RAF040P01TCL datasheet?p=RAF040P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RAF040P01TCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
auf Bestellung 3757 Stücke:
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15+1.49 EUR
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RB168M-40TR datasheet?p=RB168M-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168M-40TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDU
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 1A
Technology: Schottky
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Produkt ist nicht verfügbar
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RB501VM-40TE-17 datasheet?p=RB501VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB501VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
auf Bestellung 61612 Stücke:
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36+0.58 EUR
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RB520SM-30T2R datasheet?p=RB520SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA EMD2
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 140292 Stücke:
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44+0.48 EUR
77+0.27 EUR
123+0.17 EUR
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RB521SM-30T2R datasheet?p=RB521SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521SM-30T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA EMD2
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
auf Bestellung 7605 Stücke:
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50+0.42 EUR
80+0.26 EUR
124+0.17 EUR
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RB521SM-40T2R datasheet?p=RB521SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521SM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 56526 Stücke:
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39+0.55 EUR
65+0.32 EUR
105+0.2 EUR
500+0.14 EUR
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RB751SM-40T2R datasheet?p=RB751SM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB751SM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA SC79
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-79
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 33867 Stücke:
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36+0.58 EUR
60+0.35 EUR
100+0.21 EUR
500+0.17 EUR
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RB751VM-40TE-17 datasheet?p=RB751VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB751VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA UMD2
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: UMD2
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 5691 Stücke:
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31+0.69 EUR
44+0.48 EUR
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RBQ10B65ATL rbq10b65a.pdf
RBQ10B65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
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RQ1E070RPTR datasheet?p=RQ1E070RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ1E070RPTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 7A TSMT8
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 7987 Stücke:
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9+2.4 EUR
10+2.14 EUR
100+1.67 EUR
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RRF015P03TL datasheet?p=RRF015P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRF015P03TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4909 Stücke:
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18+1.21 EUR
28+0.76 EUR
100+0.39 EUR
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RRL035P03TR datasheet?p=RRL035P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRL035P03TR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 5792 Stücke:
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RSD100N10TL rsd100n10.pdf
RSD100N10TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A CPT3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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RSD140P06TL rsd140p06.pdf
RSD140P06TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: CPT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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RSE002N06TL
RSE002N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Produkt ist nicht verfügbar
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RSU002N06T106 RSU002N06.pdf
RSU002N06T106
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
auf Bestellung 6973 Stücke:
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42+0.5 EUR
68+0.31 EUR
109+0.19 EUR
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RU1C001UNTCL datasheet?p=RU1C001UN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RU1C001UNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 100MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
auf Bestellung 31248 Stücke:
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38+0.57 EUR
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RUC002N05T116 datasheet?p=RUC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUC002N05T116
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 139489 Stücke:
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42+0.5 EUR
70+0.3 EUR
113+0.19 EUR
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RUF020N02TL ruf020n02tl-e.pdf
RUF020N02TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
auf Bestellung 86313 Stücke:
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28+0.77 EUR
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RUM001L02T2CL datasheet?p=RUM001L02&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RUM001L02T2CL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 100MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
auf Bestellung 12745 Stücke:
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36+0.58 EUR
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RW1A030APT2CR datasheet?p=RW1A030AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW1A030APT2CR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RW1C025ZPT2CR datasheet?p=RW1C025ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RW1C025ZPT2CR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Produkt ist nicht verfügbar
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RYM002N05T2CL datasheet?p=RYM002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RYM002N05T2CL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 555611 Stücke:
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29+0.74 EUR
47+0.45 EUR
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TFZGTR12B datasheet?p=TFZ12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
TFZGTR12B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: TUMD2
Part Status: Not For New Designs
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
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TFZGTR15B tfz30b.pdf
TFZGTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW TUMD2
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TFZGTR36B tfz30b.pdf
TFZGTR36B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW TUMD2
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TFZGTR6.2B tfz30b.pdf
TFZGTR6.2B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2
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TFZGTR7.5B tfz30b.pdf
TFZGTR7.5B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 7.5V 500MW TUMD2
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TFZGTR9.1B tfz30b.pdf
TFZGTR9.1B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.1V 500MW TUMD2
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UDZVTE-1710B datasheet?p=UDZV10B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVTE-1710B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 10V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
auf Bestellung 19782 Stücke:
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50+0.42 EUR
79+0.26 EUR
127+0.17 EUR
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UDZVTE-1711B datasheet?p=UDZV11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVTE-1711B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 4945 Stücke:
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72+0.3 EUR
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UDZVTE-1712B datasheet?p=UDZV12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVTE-1712B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 17655 Stücke:
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77+0.27 EUR
107+0.2 EUR
160+0.13 EUR
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UDZVTE-1713B udzv11b.pdf
UDZVTE-1713B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 13V 200MW UMD2
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UDZVTE-1715B datasheet?p=UDZV15B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVTE-1715B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 15V 200MW UMD2
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Power - Max: 200 mW
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 42 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 17643 Stücke:
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AnzahlPrivatkunde
39+0.55 EUR
59+0.36 EUR
119+0.18 EUR
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UDZVTE-1716B datasheet?p=UDZV16B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UDZVTE-1716B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 16V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 11697 Stücke:
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AnzahlPrivatkunde
77+0.27 EUR
113+0.19 EUR
237+0.088 EUR
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