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DAP202UMTL DAP202UMTL Rohm Semiconductor datasheet?p=DAP202UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
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DTA013ZEBTL DTA013ZEBTL Rohm Semiconductor datasheet?p=DTA013ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTA013ZUBTL DTA013ZUBTL Rohm Semiconductor dta013z.pdf Description: TRANS PREBIAS PNP 0.2W SC85
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DTA024XUBTL DTA024XUBTL Rohm Semiconductor dta024xubtl-e.pdf Description: TRANS PREBIAS PNP 0.2W UMT3F
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DTA125TKAT146 DTA125TKAT146 Rohm Semiconductor datasheet?p=DTA125TKA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
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DTC013ZEBTL DTC013ZEBTL Rohm Semiconductor datasheet?p=DTC013ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTC013ZMT2L DTC013ZMT2L Rohm Semiconductor dtc013zebtl-e.pdf Description: TRANS PREBIAS NPN 0.15W VMT3
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DTC013ZUBTL DTC013ZUBTL Rohm Semiconductor datasheet?p=DTC013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC024XMT2L DTC024XMT2L Rohm Semiconductor dtc024x.pdf Description: TRANS PREBIAS NPN 0.15W VMT3
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DTC024XUBTL DTC024XUBTL Rohm Semiconductor dtc024x.pdf Description: TRANS PREBIAS NPN 0.2W UMT3F
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EDZVFHT2R12B EDZVFHT2R12B Rohm Semiconductor datasheet?p=EDZVFH12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
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EMB51T2R EMB51T2R Rohm Semiconductor emb51t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMB61T2R EMB61T2R Rohm Semiconductor emb61.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMB75T2R EMB75T2R Rohm Semiconductor datasheet?p=EMB75&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD53T2R EMD53T2R Rohm Semiconductor datasheet?p=EMD53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
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EMD59T2R EMD59T2R Rohm Semiconductor datasheet?p=EMD59&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD62T2R EMD62T2R Rohm Semiconductor datasheet?p=EMD62&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
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EMH59T2R EMH59T2R Rohm Semiconductor emh59.pdf Description: TRANS 2NPN PREBIAS 0.15W EMT6
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EMH60T2R EMH60T2R Rohm Semiconductor datasheet?p=EMH60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMH61T2R EMH61T2R Rohm Semiconductor emh61t2r-e.pdf Description: TRANS 2NPN PREBIAS 0.15W EMT6
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EMH75T2R EMH75T2R Rohm Semiconductor emh75.pdf Description: TRANS 2NPN PREBIAS 0.15W EMT6
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EMT51T2R EMT51T2R Rohm Semiconductor emt51t2r.pdf Description: TRANS 2PNP 20V 0.2A 6EMT
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EMX52T2R EMX52T2R Rohm Semiconductor datasheet?p=EMX52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
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EMZ51T2R EMZ51T2R Rohm Semiconductor datasheet?p=EMZ51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
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LM4559FVT-GE2 LM4559FVT-GE2 Rohm Semiconductor datasheet?p=LM4559FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
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LM4565FVM-GTR LM4565FVM-GTR Rohm Semiconductor datasheet?p=LM4565FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
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LMR341G-GTR LMR341G-GTR Rohm Semiconductor datasheet?p=LMR341G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMR342F-GE2 LMR342F-GE2 Rohm Semiconductor lmr342fvj-e.pdf Description: IC CMOS 2 CIRCUIT 8SOP
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LMR342FVM-GTR LMR342FVM-GTR Rohm Semiconductor lmr342fvj-e.pdf Description: IC OP AMP GROUND SENSE 8MSOP
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LMR342FVT-GE2 LMR342FVT-GE2 Rohm Semiconductor lmr342fvj-e.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
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LMR344FJ-GE2 LMR344FJ-GE2 Rohm Semiconductor datasheet?p=LMR344FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2500 Stücke:
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100+1.64 EUR
250+1.54 EUR
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LMR344FVJ-E2 LMR344FVJ-E2 Rohm Semiconductor datasheet?p=LMR344FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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LMR822F-GE2 LMR822F-GE2 Rohm Semiconductor datasheet?p=LMR822F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR822FJ-GE2 LMR822FJ-GE2 Rohm Semiconductor datasheet?p=LMR822FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT SOP8J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR822FV-GE2 LMR822FV-GE2 Rohm Semiconductor lmr821g-e.pdf Description: IC OP AMP FULL SWING 8SSOP
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LMR824F-GE2 LMR824F-GE2 Rohm Semiconductor datasheet?p=LMR824F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR824FJ-GE2 LMR824FJ-GE2 Rohm Semiconductor lmr821g-e.pdf Description: IC OP AMP FULL SWING SOP14J
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LMR824FVJ-E2 LMR824FVJ-E2 Rohm Semiconductor lmr821g-e.pdf Description: IC OP AMP FULL SWING 14TSSOP
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LMR932FVJ-GE2 LMR932FVJ-GE2 Rohm Semiconductor lmr981g-e.pdf Description: IC OP AMP FULL SWING 8TSSOP
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LMR932FVM-GTR LMR932FVM-GTR Rohm Semiconductor datasheet?p=LMR932FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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QH8MA3TCR QH8MA3TCR Rohm Semiconductor datasheet?p=QH8MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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QS5W1TR QS5W1TR Rohm Semiconductor qs5w1.pdf Description: TRANS 2NPN 30V 3A TSMT5
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QS5W2TR QS5W2TR Rohm Semiconductor qs5w2tr-e.pdf Description: TRANS 2NPN 50V 3A TSMT5
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QS5Y1TR QS5Y1TR Rohm Semiconductor datasheet?p=QS5Y1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 30V 3A TSMT5
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QS6Z5TR QS6Z5TR Rohm Semiconductor datasheet?p=QS6Z5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
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QS8K13TCR QS8K13TCR Rohm Semiconductor datasheet?p=QS8K13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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RB050L-40DDTE25 RB050L-40DDTE25 Rohm Semiconductor datasheet?p=RB050L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RB050L-60DDTE25 RB050L-60DDTE25 Rohm Semiconductor datasheet?p=RB050L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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RB055L-30DDTE25 RB055L-30DDTE25 Rohm Semiconductor datasheet?p=RB055L-30DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
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RB055L-60DDTE25 RB055L-60DDTE25 Rohm Semiconductor datasheet?p=RB055L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
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RB058L150TE25 RB058L150TE25 Rohm Semiconductor SiC_SCS_AECQ.pdf Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
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RB058L-40DDTE25 RB058L-40DDTE25 Rohm Semiconductor datasheet?p=RB058L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
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RB058L-60DDTE25 RB058L-60DDTE25 Rohm Semiconductor datasheet?p=RB058L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
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RB060L-40DDTE25 RB060L-40DDTE25 Rohm Semiconductor datasheet?p=RB060L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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RB060M-40DDTR RB060M-40DDTR Rohm Semiconductor rb060m-40dd.pdf Description: DIODE SCHOTTKY 40V 2A PMDU
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RB060M-60DDTR RB060M-60DDTR Rohm Semiconductor rb060m-60dd.pdf Description: DIODE SCHOTTKY 60V 2A PMDU
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RB068L100DDTE25 RB068L100DDTE25 Rohm Semiconductor datasheet?p=RB068L100DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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RB068L150TE25 RB068L150TE25 Rohm Semiconductor rb068l150.pdf Description: DIODE SCHOTTKY 150V 2A PMDS
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RB068L-40TE25 RB068L-40TE25 Rohm Semiconductor rb068l-40.pdf Description: DIODE SCHOTTKY 40V 2A PMDS
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RB078BM30STL RB078BM30STL Rohm Semiconductor rb078bm30stl-e.pdf Description: DIODE SCHOTTKY 30V 5A TO252
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DAP202UMTL datasheet?p=DAP202UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DAP202UMTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
auf Bestellung 2838 Stücke:
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33+0.55 EUR
47+0.38 EUR
100+0.19 EUR
500+0.15 EUR
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DTA013ZEBTL datasheet?p=DTA013ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA013ZEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.15W SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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39+0.46 EUR
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DTA013ZUBTL dta013z.pdf
DTA013ZUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W SC85
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DTA024XUBTL dta024xubtl-e.pdf
DTA024XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.2W UMT3F
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DTA125TKAT146 datasheet?p=DTA125TKA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA125TKAT146
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 200 kOhms
auf Bestellung 2971 Stücke:
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Anzahl Preis
42+0.42 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 42
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DTC013ZEBTL datasheet?p=DTC013ZEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC013ZEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 9019 Stücke:
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Anzahl Preis
53+0.33 EUR
88+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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DTC013ZMT2L dtc013zebtl-e.pdf
DTC013ZMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
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DTC013ZUBTL datasheet?p=DTC013ZUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC013ZUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 8784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48
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DTC024XMT2L dtc024x.pdf
DTC024XMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.15W VMT3
auf Bestellung 7035 Stücke:
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DTC024XUBTL dtc024x.pdf
DTC024XUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.2W UMT3F
auf Bestellung 2044 Stücke:
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EDZVFHT2R12B datasheet?p=EDZVFH12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZVFHT2R12B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 32515 Stücke:
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Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.096 EUR
Mindestbestellmenge: 32
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EMB51T2R emb51t2r-e.pdf
EMB51T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
30+0.6 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 22
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EMB61T2R emb61.pdf
EMB61T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
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EMB75T2R datasheet?p=EMB75&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMB75T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
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EMD53T2R datasheet?p=EMD53&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD53T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
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EMD59T2R datasheet?p=EMD59&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD59T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
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EMD62T2R datasheet?p=EMD62&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD62T2R
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 5892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.14 EUR
Mindestbestellmenge: 31
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EMH59T2R emh59.pdf
EMH59T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
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EMH60T2R datasheet?p=EMH60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH60T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 47960 Stücke:
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Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
Mindestbestellmenge: 24
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EMH61T2R emh61t2r-e.pdf
EMH61T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.49 EUR
100+0.28 EUR
Mindestbestellmenge: 27
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EMH75T2R emh75.pdf
EMH75T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
auf Bestellung 8000 Stücke:
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EMT51T2R emt51t2r.pdf
EMT51T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP 20V 0.2A 6EMT
auf Bestellung 5813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.49 EUR
100+0.28 EUR
500+0.18 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 27
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EMX52T2R datasheet?p=EMX52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX52T2R
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.1A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 12985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
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EMZ51T2R datasheet?p=EMZ51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMZ51T2R
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 400MHz, 350MHz
Supplier Device Package: EMT6
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
Mindestbestellmenge: 24
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LM4559FVT-GE2 datasheet?p=LM4559FVT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM4559FVT-GE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3.3mA
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Number of Circuits: 2
Voltage - Supply Span (Min): 8 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 2998 Stücke:
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Anzahl Preis
18+0.99 EUR
26+0.7 EUR
28+0.63 EUR
100+0.55 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.47 EUR
Mindestbestellmenge: 18
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LM4565FVM-GTR datasheet?p=LM4565FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LM4565FVM-GTR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4.5mA
Slew Rate: 5V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 70 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 1078 Stücke:
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Anzahl Preis
19+0.95 EUR
27+0.67 EUR
30+0.6 EUR
100+0.53 EUR
250+0.49 EUR
500+0.47 EUR
1000+0.45 EUR
Mindestbestellmenge: 19
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LMR341G-GTR datasheet?p=LMR341G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR341G-GTR
Hersteller: Rohm Semiconductor
Description: IC CMOS 1 CIRCUIT 6SSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 80µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 6-SSOP
Number of Circuits: 1
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2485 Stücke:
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Anzahl Preis
19+0.97 EUR
21+0.86 EUR
25+0.8 EUR
100+0.66 EUR
250+0.61 EUR
500+0.52 EUR
1000+0.41 EUR
Mindestbestellmenge: 19
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LMR342F-GE2 lmr342fvj-e.pdf
LMR342F-GE2
Hersteller: Rohm Semiconductor
Description: IC CMOS 2 CIRCUIT 8SOP
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
16+1.14 EUR
25+1.07 EUR
100+0.87 EUR
250+0.81 EUR
500+0.69 EUR
Mindestbestellmenge: 14
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LMR342FVM-GTR lmr342fvj-e.pdf
LMR342FVM-GTR
Hersteller: Rohm Semiconductor
Description: IC OP AMP GROUND SENSE 8MSOP
auf Bestellung 3000 Stücke:
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LMR342FVT-GE2 lmr342fvj-e.pdf
LMR342FVT-GE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
19+0.95 EUR
Mindestbestellmenge: 17
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LMR344FJ-GE2 datasheet?p=LMR344FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR344FJ-GE2
Hersteller: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14SOPJ
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-SOPJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
8+2.36 EUR
10+2.11 EUR
25+2 EUR
100+1.64 EUR
250+1.54 EUR
500+1.36 EUR
1000+1.07 EUR
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LMR344FVJ-E2 datasheet?p=LMR344FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR344FVJ-E2
Hersteller: Rohm Semiconductor
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400µA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 250 µV
Supplier Device Package: 14-TSSOP-BJ
Number of Circuits: 4
Current - Output / Channel: 113 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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LMR822F-GE2 datasheet?p=LMR822F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR822F-GE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR822FJ-GE2 datasheet?p=LMR822FJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR822FJ-GE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT SOP8J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 650µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOP-J
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
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LMR822FV-GE2 lmr821g-e.pdf
LMR822FV-GE2
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8SSOP
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LMR824F-GE2 datasheet?p=LMR824F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR824F-GE2
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.13mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 45 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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LMR824FJ-GE2 lmr821g-e.pdf
LMR824FJ-GE2
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING SOP14J
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LMR824FVJ-E2 lmr821g-e.pdf
LMR824FVJ-E2
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 14TSSOP
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LMR932FVJ-GE2 lmr981g-e.pdf
LMR932FVJ-GE2
Hersteller: Rohm Semiconductor
Description: IC OP AMP FULL SWING 8TSSOP
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LMR932FVM-GTR datasheet?p=LMR932FVM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LMR932FVM-GTR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 140µA
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 90 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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14+1.32 EUR
16+1.16 EUR
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100+0.89 EUR
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QH8MA3TCR datasheet?p=QH8MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QH8MA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 7A/5.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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10+1.88 EUR
15+1.18 EUR
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500+0.6 EUR
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QS5W1TR qs5w1.pdf
QS5W1TR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 30V 3A TSMT5
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17+1.07 EUR
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QS5W2TR qs5w2tr-e.pdf
QS5W2TR
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN 50V 3A TSMT5
auf Bestellung 268 Stücke:
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17+1.07 EUR
20+0.91 EUR
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QS5Y1TR datasheet?p=QS5Y1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS5Y1TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 3A TSMT5
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15+1.2 EUR
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QS6Z5TR datasheet?p=QS6Z5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6Z5TR
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP 50V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Frequency - Transition: 360MHz, 400MHz
Supplier Device Package: TSMT6 (SC-95)
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QS8K13TCR datasheet?p=QS8K13&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS8K13TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
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7+2.85 EUR
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100+1.22 EUR
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RB050L-40DDTE25 datasheet?p=RB050L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB050L-40DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1406 Stücke:
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11+1.62 EUR
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RB050L-60DDTE25 datasheet?p=RB050L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB050L-60DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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RB055L-30DDTE25 datasheet?p=RB055L-30DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB055L-30DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 293 Stücke:
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16+1.16 EUR
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RB055L-60DDTE25 datasheet?p=RB055L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB055L-60DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
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RB058L150TE25 SiC_SCS_AECQ.pdf
RB058L150TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 1035 Stücke:
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17+1.04 EUR
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100+0.41 EUR
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RB058L-40DDTE25 datasheet?p=RB058L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB058L-40DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 439 Stücke:
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12+1.53 EUR
19+0.95 EUR
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RB058L-60DDTE25 datasheet?p=RB058L-60DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB058L-60DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4304 Stücke:
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19+0.93 EUR
22+0.81 EUR
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RB060L-40DDTE25 datasheet?p=RB060L-40DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB060L-40DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1267 Stücke:
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18+1 EUR
25+0.73 EUR
100+0.57 EUR
500+0.44 EUR
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RB060M-40DDTR rb060m-40dd.pdf
RB060M-40DDTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDU
Produkt ist nicht verfügbar
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RB060M-60DDTR rb060m-60dd.pdf
RB060M-60DDTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A PMDU
Produkt ist nicht verfügbar
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RB068L100DDTE25 datasheet?p=RB068L100DD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB068L100DDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 2A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3737 Stücke:
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Anzahl Preis
12+1.53 EUR
18+1 EUR
100+0.76 EUR
500+0.59 EUR
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RB068L150TE25 rb068l150.pdf
RB068L150TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 2A PMDS
auf Bestellung 1080 Stücke:
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RB068L-40TE25 rb068l-40.pdf
RB068L-40TE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
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RB078BM30STL rb078bm30stl-e.pdf
RB078BM30STL
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 5A TO252
auf Bestellung 6 Stücke:
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