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BD91407GW-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA41W12ST Rohm Semiconductor Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA41W12ST-V5 Rohm Semiconductor Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SCT3030ARC15 SCT3030ARC15 Rohm Semiconductor sct3030ar-e.pdf Description: 650V, 70A, 4-PIN THD, TRENCH-STR
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
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SCT3030ARHRC15 SCT3030ARHRC15 Rohm Semiconductor sct3030arhr-e.pdf Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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SCT3040KRHRC15 SCT3040KRHRC15 Rohm Semiconductor sct3040krhr-e.pdf Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
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SCT4018KRC15 SCT4018KRC15 Rohm Semiconductor datasheet?p=SCT4018KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 18M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
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BD8693FJ Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RGT16NS65DGTL RGT16NS65DGTL Rohm Semiconductor datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
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RBS2LAM40CTR RBS2LAM40CTR Rohm Semiconductor rbs2lam40ctr-e.pdf Description: DIODE SCHOTTKY 20V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 20 V
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100+0.55 EUR
500+0.42 EUR
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BD26503KS2 Rohm Semiconductor Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD26503KS2-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD77502FVM Rohm Semiconductor bd77501g-e.pdf Description: HIGH POWER CHIP IR LED, SIDE VIE
Voltage - Supply Span (Max): 15 V
Voltage - Supply Span (Min): 7 V
Current - Output / Channel: 7.5 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 10V/µs
Current - Supply: 2.6mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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BR24T512FVT-3AME2 BR24T512FVT-3AME2 Rohm Semiconductor datasheet?p=BR24T512FVT-3AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BR24T512FVT-3AME2 BR24T512FVT-3AME2 Rohm Semiconductor datasheet?p=BR24T512FVT-3AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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25+3.21 EUR
50+3.09 EUR
100+2.99 EUR
250+2.84 EUR
500+2.75 EUR
1000+2.65 EUR
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R6086YNZC17 R6086YNZC17 Rohm Semiconductor r6086ynzc17-e.pdf Description: NCH 600V 33A, TO-3PF, POWER MOSF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
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R6004END4TL1 R6004END4TL1 Rohm Semiconductor datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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R6004END4TL1 R6004END4TL1 Rohm Semiconductor datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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500+0.99 EUR
1000+0.9 EUR
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ESR10EZPD3601 ESR10EZPD3601 Rohm Semiconductor esr-e.pdf Description: RES 3.6K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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ESR10EZPD3601 ESR10EZPD3601 Rohm Semiconductor esr-e.pdf Description: RES 3.6K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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ESR18EZPD3601 ESR18EZPD3601 Rohm Semiconductor esr-e.pdf Description: RES 3.6K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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ESR18EZPD3601 ESR18EZPD3601 Rohm Semiconductor esr-e.pdf Description: RES 3.6K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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ESR03EZPD3602 ESR03EZPD3602 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
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ESR03EZPD3602 ESR03EZPD3602 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
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ESR03EZPD3601 ESR03EZPD3601 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Produkt ist nicht verfügbar
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ESR03EZPD3601 ESR03EZPD3601 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
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53+0.39 EUR
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500+0.093 EUR
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2SAR502E3TL 2SAR502E3TL Rohm Semiconductor datasheet?p=2SAR502E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 30V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
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2SAR502E3TL 2SAR502E3TL Rohm Semiconductor datasheet?p=2SAR502E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PNP 30V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
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2SAR502E3HZGTL 2SAR502E3HZGTL Rohm Semiconductor datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SAR502E3HZGTL 2SAR502E3HZGTL Rohm Semiconductor datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BD14215FVJ-LAE2 BD14215FVJ-LAE2 Rohm Semiconductor datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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BD14215FVJ-LAE2 BD14215FVJ-LAE2 Rohm Semiconductor datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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BD39042MUF-CE2 BD39042MUF-CE2 Rohm Semiconductor datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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BD39042MUF-CE2 BD39042MUF-CE2 Rohm Semiconductor datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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BD7003NUX-E2 BD7003NUX-E2 Rohm Semiconductor ul94_bd7003nux-e2-e.pdf Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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BR25L640F-W Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB168MM150TFTR RB168MM150TFTR Rohm Semiconductor datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
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RB168MM150TFTR RB168MM150TFTR Rohm Semiconductor datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
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RB168VWM150TR RB168VWM150TR Rohm Semiconductor datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB168VWM150TR RB168VWM150TR Rohm Semiconductor datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB168VWM150TFTR RB168VWM150TFTR Rohm Semiconductor datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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RB168VWM150TFTR RB168VWM150TFTR Rohm Semiconductor datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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R6049YNZ4C13 R6049YNZ4C13 Rohm Semiconductor datasheet?p=R6049YNZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
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R6049YNX3C16 R6049YNX3C16 Rohm Semiconductor datasheet?p=R6049YNX3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
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DTD543XE3TL DTD543XE3TL Rohm Semiconductor datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTD543XE3TL DTD543XE3TL Rohm Semiconductor datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTD523YE3TL DTD523YE3TL Rohm Semiconductor datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD523YE3TL DTD523YE3TL Rohm Semiconductor datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD543EE3TL DTD543EE3TL Rohm Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTD543EE3TL DTD543EE3TL Rohm Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DTD513ZE3TL DTD513ZE3TL Rohm Semiconductor datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTD513ZE3TL DTD513ZE3TL Rohm Semiconductor datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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ESR10EZPD3302 ESR10EZPD3302 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
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ESR10EZPD3302 ESR10EZPD3302 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
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KTR18EZPF6044 KTR18EZPF6044 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
Produkt ist nicht verfügbar
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KTR18EZPF6044 KTR18EZPF6044 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
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142+0.14 EUR
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RCJ200N20TL RCJ200N20TL Rohm Semiconductor datasheet?p=RCJ200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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25+3.06 EUR
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BD6208AFS-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD6208AFS-BZE2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24A64F-WLBH2 BR24A64F-WLBH2 Rohm Semiconductor datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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250+5.95 EUR
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BD91407GW-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA41W12ST
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BA41W12ST-V5
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SCT3030ARC15 sct3030ar-e.pdf
SCT3030ARC15
Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
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1+43.67 EUR
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50+26.26 EUR
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SCT3030ARHRC15 sct3030arhr-e.pdf
SCT3030ARHRC15
Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 438 Stücke:
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10+35.76 EUR
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SCT3040KRHRC15 sct3040krhr-e.pdf
SCT3040KRHRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Power Dissipation (Max): 262W
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
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SCT4018KRC15 datasheet?p=SCT4018KR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4018KRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 18M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
auf Bestellung 4197 Stücke:
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120+44.15 EUR
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BD8693FJ
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RGT16NS65DGTL datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGT16NS65DGTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
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RBS2LAM40CTR rbs2lam40ctr-e.pdf
RBS2LAM40CTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 20 V
auf Bestellung 30371 Stücke:
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18+1.18 EUR
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100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
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BD26503KS2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD26503KS2-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD77502FVM bd77501g-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP IR LED, SIDE VIE
Voltage - Supply Span (Max): 15 V
Voltage - Supply Span (Min): 7 V
Current - Output / Channel: 7.5 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 10V/µs
Current - Supply: 2.6mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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BR24T512FVT-3AME2 datasheet?p=BR24T512FVT-3AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T512FVT-3AME2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BR24T512FVT-3AME2 datasheet?p=BR24T512FVT-3AM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T512FVT-3AME2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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6+3.8 EUR
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25+3.21 EUR
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500+2.75 EUR
1000+2.65 EUR
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R6086YNZC17 r6086ynzc17-e.pdf
R6086YNZC17
Hersteller: Rohm Semiconductor
Description: NCH 600V 33A, TO-3PF, POWER MOSF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
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1+35.82 EUR
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100+27.27 EUR
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R6004END4TL1 datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6004END4TL1
Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
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R6004END4TL1 datasheet?p=R6004END4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6004END4TL1
Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2396 Stücke:
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7+3 EUR
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ESR10EZPD3601 esr-e.pdf
ESR10EZPD3601
Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 2/5W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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5000+0.067 EUR
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ESR10EZPD3601 esr-e.pdf
ESR10EZPD3601
Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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ESR18EZPD3601 esr-e.pdf
ESR18EZPD3601
Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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AnzahlPrivatkunde
5000+0.09 EUR
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ESR18EZPD3601 esr-e.pdf
ESR18EZPD3601
Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
70+0.3 EUR
102+0.2 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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ESR03EZPD3602 esr-e.pdf
ESR03EZPD3602
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.064 EUR
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ESR03EZPD3602 esr-e.pdf
ESR03EZPD3602
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
99+0.21 EUR
143+0.14 EUR
166+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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ESR03EZPD3601 esr-e.pdf
ESR03EZPD3601
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR03EZPD3601 esr-e.pdf
ESR03EZPD3601
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
99+0.21 EUR
143+0.14 EUR
166+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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2SAR502E3TL datasheet?p=2SAR502E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR502E3TL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SAR502E3TL datasheet?p=2SAR502E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SAR502E3TL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
65+0.32 EUR
105+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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2SAR502E3HZGTL datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502E3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2SAR502E3HZGTL datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502E3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
42+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BD14215FVJ-LAE2 datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD14215FVJ-LAE2
Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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BD14215FVJ-LAE2 datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD14215FVJ-LAE2
Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2469 Stücke:
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9+2.43 EUR
12+1.77 EUR
25+1.59 EUR
100+1.42 EUR
250+1.33 EUR
500+1.27 EUR
1000+1.24 EUR
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BD39042MUF-CE2 datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD39042MUF-CE2
Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD39042MUF-CE2 datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD39042MUF-CE2
Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2847 Stücke:
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5+4.66 EUR
10+3.46 EUR
25+3.17 EUR
100+2.84 EUR
250+2.68 EUR
500+2.58 EUR
1000+2.51 EUR
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BD7003NUX-E2 ul94_bd7003nux-e2-e.pdf
BD7003NUX-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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BR25L640F-W
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB168MM150TFTR datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 42000 Stücke:
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3000+0.27 EUR
9000+0.24 EUR
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RB168MM150TFTR datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 43445 Stücke:
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18+1.21 EUR
29+0.74 EUR
50+0.54 EUR
100+0.48 EUR
500+0.36 EUR
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RB168VWM150TR datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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RB168VWM150TR datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2936 Stücke:
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24+0.88 EUR
28+0.75 EUR
100+0.52 EUR
500+0.4 EUR
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RB168VWM150TFTR datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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RB168VWM150TFTR datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2645 Stücke:
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20+1.05 EUR
24+0.9 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.39 EUR
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R6049YNZ4C13 datasheet?p=R6049YNZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6049YNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 590 Stücke:
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2+15.52 EUR
10+10.38 EUR
30+8.81 EUR
120+7.35 EUR
270+6.72 EUR
510+6.51 EUR
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R6049YNX3C16 datasheet?p=R6049YNX3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6049YNX3C16
Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 997 Stücke:
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2+14.09 EUR
50+7.58 EUR
100+6.95 EUR
500+5.85 EUR
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DTD543XE3TL datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543XE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTD543XE3TL datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543XE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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DTD523YE3TL datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD523YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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DTD523YE3TL datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD523YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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DTD543EE3TL datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DTD543EE3TL datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
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DTD513ZE3TL datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DTD513ZE3TL datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2587 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.29 EUR
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ESR10EZPD3302 esr-e.pdf
ESR10EZPD3302
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
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5000+0.071 EUR
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ESR10EZPD3302 esr-e.pdf
ESR10EZPD3302
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
89+0.24 EUR
129+0.17 EUR
150+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
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KTR18EZPF6044 ktr-e.pdf
KTR18EZPF6044
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
Produkt ist nicht verfügbar
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KTR18EZPF6044 ktr-e.pdf
KTR18EZPF6044
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
auf Bestellung 4900 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
99+0.21 EUR
142+0.14 EUR
165+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
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RCJ200N20TL datasheet?p=RCJ200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ200N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 952 Stücke:
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5+4.52 EUR
10+3.36 EUR
25+3.06 EUR
100+2.74 EUR
250+2.59 EUR
500+2.5 EUR
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BD6208AFS-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD6208AFS-BZE2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24A64F-WLBH2 datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24A64F-WLBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+5.95 EUR
500+5.72 EUR
Mindestbestellmenge: 250 Stücke
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