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BD49K47G-TL BD49K47G-TL Rohm Semiconductor datasheet?p=BD49K47G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 4.7V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BD49K47G-TL BD49K47G-TL Rohm Semiconductor datasheet?p=BD49K47G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 4.7V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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LMR1901YG-MTR LMR1901YG-MTR Rohm Semiconductor datasheet?p=LMR1901YG-M&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NANO ENERGY, LMR SERIES
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 175nA
Slew Rate: 300V/µs
Gain Bandwidth Product: 1 kHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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LMR1901YG-MTR LMR1901YG-MTR Rohm Semiconductor datasheet?p=LMR1901YG-M&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NANO ENERGY, LMR SERIES
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 175nA
Slew Rate: 300V/µs
Gain Bandwidth Product: 1 kHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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BD9402FP-DE2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD9405KUT-HVG Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
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BD9409F BD9409F Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
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BD94061F Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
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BD94061F-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SFR10EZPF5112 SFR10EZPF5112 Rohm Semiconductor sfr-e.pdf Description: RES SMD 51.1K OHM 1% 1/8W 0805
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 51.1 kOhms
Height - Seated (Max): 0.026" (0.65mm)
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ESR10EZPD1803 ESR10EZPD1803 Rohm Semiconductor esr-e.pdf Description: RES 180K OHM 0.5% 2/5W 0805
Resistance: 180 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
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ESR10EZPD1803 ESR10EZPD1803 Rohm Semiconductor esr-e.pdf Description: RES 180K OHM 0.5% 2/5W 0805
Resistance: 180 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
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SFR01MZPJ102 SFR01MZPJ102 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Resistance: 1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
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SFR01MZPJ102 SFR01MZPJ102 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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ESR10EZPD5491 ESR10EZPD5491 Rohm Semiconductor esr-e.pdf Description: RES 5.49K OHM 0.5% 2/5W 0805
Resistance: 5.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
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ESR10EZPD5491 ESR10EZPD5491 Rohm Semiconductor esr-e.pdf Description: RES 5.49K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Resistance: 5.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
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SFR01MZPF9312 SFR01MZPF9312 Rohm Semiconductor sfr-e.pdf Description: RES SMD 93.1K OHM 1% 1/16W 0402
Resistance: 93.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB060MM-60TFTR RB060MM-60TFTR Rohm Semiconductor datasheet?p=RB060MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RB060MM-60TF IS THE HIGH RELIABI
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
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SMF11VTR SMF11VTR Rohm Semiconductor datasheet?p=SMF11V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 11VWM 18.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF11VTR SMF11VTR Rohm Semiconductor datasheet?p=SMF11V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 11VWM 18.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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RGW50TS65GC11 RGW50TS65GC11 Rohm Semiconductor datasheet?p=RGW50TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 50A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 156 W
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RGW50NL65DHRBTL RGW50NL65DHRBTL Rohm Semiconductor datasheet?p=RGW50NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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RGW50NL65DHRBTL RGW50NL65DHRBTL Rohm Semiconductor datasheet?p=RGW50NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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RGW50NL65HRBTL RGW50NL65HRBTL Rohm Semiconductor datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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RGW50NL65HRBTL RGW50NL65HRBTL Rohm Semiconductor datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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BU4927G-TR BU4927G-TR Rohm Semiconductor datasheet?p=BU4927G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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BU4927G-TR BU4927G-TR Rohm Semiconductor datasheet?p=BU4927G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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250+0.63 EUR
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1000+0.42 EUR
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BM1390GLV-ZTR BM1390GLV-ZTR Rohm Semiconductor datasheet?p=BM1390GLV-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR 18.85PSIA
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 10-VFLGA
Output Type: I2C
Mounting Type: Surface Mount
Operating Pressure: 4.35PSI ~ 18.85PSI (30kPa ~ 130kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Port Style: No Port
Maximum Pressure: 290.08PSI (2000kPa)
Produkt ist nicht verfügbar
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BM1390GLV-ZTR BM1390GLV-ZTR Rohm Semiconductor datasheet?p=BM1390GLV-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR 18.85PSIA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 10-VFLGA
Output Type: I2C
Mounting Type: Surface Mount
Operating Pressure: 4.35PSI ~ 18.85PSI (30kPa ~ 130kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Port Style: No Port
Maximum Pressure: 290.08PSI (2000kPa)
auf Bestellung 615 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.29 EUR
5+8.33 EUR
10+7.98 EUR
25+7.56 EUR
50+7.27 EUR
100+7 EUR
500+6.47 EUR
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HP8KB6TB1 HP8KB6TB1 Rohm Semiconductor datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 40V 10.5A 8HSOP
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 2500 Stücke:
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2500+1.11 EUR
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HP8KB6TB1 HP8KB6TB1 Rohm Semiconductor datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 40V 10.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
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5+4.36 EUR
10+2.8 EUR
100+1.9 EUR
500+1.52 EUR
1000+1.4 EUR
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HP8KB7TB1 HP8KB7TB1 Rohm Semiconductor datasheet?p=HP8KB7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 40V 16A 8HSOP
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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HP8KB7TB1 HP8KB7TB1 Rohm Semiconductor datasheet?p=HP8KB7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 40V 16A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2465 Stücke:
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4+6.68 EUR
10+4.37 EUR
100+3.03 EUR
500+2.48 EUR
1000+2.3 EUR
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HP8KC7TB1 HP8KC7TB1 Rohm Semiconductor datasheet?p=HP8KC7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Produkt ist nicht verfügbar
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HP8KC7TB1 HP8KC7TB1 Rohm Semiconductor datasheet?p=HP8KC7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2431 Stücke:
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4+6.7 EUR
10+4.38 EUR
100+3.06 EUR
500+2.49 EUR
1000+2.31 EUR
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R5011FNX R5011FNX Rohm Semiconductor datasheet?p=R5011FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
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R5011FNJTL R5011FNJTL Rohm Semiconductor datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 500V 11A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
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LTR18EZPJ9R1 LTR18EZPJ9R1 Rohm Semiconductor ltr-e.pdf Description: RES 9.1 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 Ohms
auf Bestellung 75000 Stücke:
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5000+0.057 EUR
10000+0.051 EUR
25000+0.045 EUR
50000+0.042 EUR
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LTR18EZPJ9R1 LTR18EZPJ9R1 Rohm Semiconductor ltr-e.pdf Description: RES 9.1 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 Ohms
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
102+0.2 EUR
152+0.14 EUR
178+0.12 EUR
500+0.084 EUR
1000+0.075 EUR
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LTR100JZPJ914 LTR100JZPJ914 Rohm Semiconductor ltr-e.pdf Description: RES SMD 910K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 910 kOhms
auf Bestellung 4000 Stücke:
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4000+0.33 EUR
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LTR100JZPJ914 LTR100JZPJ914 Rohm Semiconductor ltr-e.pdf Description: RES SMD 910K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 910 kOhms
auf Bestellung 4000 Stücke:
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14+1.52 EUR
24+0.88 EUR
50+0.63 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
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SFR01MZPJ915 SFR01MZPJ915 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 MOhms
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10000+0.026 EUR
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SFR01MZPJ915 SFR01MZPJ915 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 MOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SFR01MZPJ9R1 SFR01MZPJ9R1 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: -250/ +500ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
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10000+0.026 EUR
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SFR01MZPJ9R1 SFR01MZPJ9R1 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: -250/ +500ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SDR03EZPJ911 SDR03EZPJ911 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
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5000+0.03 EUR
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SDR03EZPJ911 SDR03EZPJ911 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SDR10EZPJ912 SDR10EZPJ912 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 kOhms
auf Bestellung 5000 Stücke:
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5000+0.064 EUR
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SDR10EZPJ912 SDR10EZPJ912 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
90+0.24 EUR
134+0.15 EUR
157+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
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SDR10EZPJ910 SDR10EZPJ910 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
auf Bestellung 5000 Stücke:
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5000+0.064 EUR
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SDR10EZPJ910 SDR10EZPJ910 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
90+0.24 EUR
134+0.15 EUR
157+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
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BR24G16FVJ-3AGTE2 BR24G16FVJ-3AGTE2 Rohm Semiconductor datasheet?p=BR24G16FVJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8TSSOPBJ
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BR24G16FVJ-3AGTE2 BR24G16FVJ-3AGTE2 Rohm Semiconductor datasheet?p=BR24G16FVJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8TSSOPBJ
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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500+0.57 EUR
1000+0.56 EUR
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RB298NS100FHTL RB298NS100FHTL Rohm Semiconductor datasheet?p=RB298NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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RB298NS100FHTL RB298NS100FHTL Rohm Semiconductor datasheet?p=RB298NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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RB228NS100FHTL RB228NS100FHTL Rohm Semiconductor datasheet?p=RB228NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.2 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS100FHTL RB228NS100FHTL Rohm Semiconductor datasheet?p=RB228NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.2 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RB088NS100TL RB088NS100TL Rohm Semiconductor datasheet?p=RB088NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 100V 5A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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RB088NS100TL RB088NS100TL Rohm Semiconductor datasheet?p=RB088NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 100V 5A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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ESR10EZPD2701 ESR10EZPD2701 Rohm Semiconductor esr-e.pdf Description: RES 2.7K OHM 0.5% 2/5W 0805
Resistance: 2.7 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
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BD49K47G-TL datasheet?p=BD49K47G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD49K47G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 4.7V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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BD49K47G-TL datasheet?p=BD49K47G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD49K47G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
DigiKey Programmable: Not Verified
Supplier Device Package: 3-SSOP
Voltage - Threshold: 4.7V
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 105°C (TA)
Reset: Active Low
Type: Voltage Detector
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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LMR1901YG-MTR datasheet?p=LMR1901YG-M&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LMR1901YG-MTR
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, LMR SERIES
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 175nA
Slew Rate: 300V/µs
Gain Bandwidth Product: 1 kHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LMR1901YG-MTR datasheet?p=LMR1901YG-M&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LMR1901YG-MTR
Hersteller: Rohm Semiconductor
Description: NANO ENERGY, LMR SERIES
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 175nA
Slew Rate: 300V/µs
Gain Bandwidth Product: 1 kHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 1.7 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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BD9402FP-DE2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD9405KUT-HVG
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD9409F
BD9409F
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD94061F
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD94061F-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SFR10EZPF5112 sfr-e.pdf
SFR10EZPF5112
Hersteller: Rohm Semiconductor
Description: RES SMD 51.1K OHM 1% 1/8W 0805
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Packaging: Tape & Reel (TR)
Resistance: 51.1 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Produkt ist nicht verfügbar
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ESR10EZPD1803 esr-e.pdf
ESR10EZPD1803
Hersteller: Rohm Semiconductor
Description: RES 180K OHM 0.5% 2/5W 0805
Resistance: 180 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR10EZPD1803 esr-e.pdf
ESR10EZPD1803
Hersteller: Rohm Semiconductor
Description: RES 180K OHM 0.5% 2/5W 0805
Resistance: 180 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Cut Tape (CT)
auf Bestellung 4880 Stücke:
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SFR01MZPJ102 sfr-e.pdf
SFR01MZPJ102
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Resistance: 1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
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SFR01MZPJ102 sfr-e.pdf
SFR01MZPJ102
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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ESR10EZPD5491 esr-e.pdf
ESR10EZPD5491
Hersteller: Rohm Semiconductor
Description: RES 5.49K OHM 0.5% 2/5W 0805
Resistance: 5.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
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ESR10EZPD5491 esr-e.pdf
ESR10EZPD5491
Hersteller: Rohm Semiconductor
Description: RES 5.49K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Resistance: 5.49 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
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46+0.46 EUR
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128+0.17 EUR
149+0.14 EUR
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1000+0.092 EUR
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SFR01MZPF9312 sfr-e.pdf
SFR01MZPF9312
Hersteller: Rohm Semiconductor
Description: RES SMD 93.1K OHM 1% 1/16W 0402
Resistance: 93.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB060MM-60TFTR datasheet?p=RB060MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB060MM-60TFTR
Hersteller: Rohm Semiconductor
Description: RB060MM-60TF IS THE HIGH RELIABI
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDU
Current - Average Rectified (Io): 2A
Technology: Schottky
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24+0.9 EUR
30+0.7 EUR
100+0.42 EUR
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SMF11VTR datasheet?p=SMF11V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF11VTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 11VWM 18.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF11VTR datasheet?p=SMF11V&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF11VTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 11VWM 18.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 2612 Stücke:
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20+1.09 EUR
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100+0.44 EUR
500+0.36 EUR
1000+0.3 EUR
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RGW50TS65GC11 datasheet?p=RGW50TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW50TS65GC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 50A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/102ns
Switching Energy: 390µJ (on), 430µJ (off)
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 73 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 156 W
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RGW50NL65DHRBTL datasheet?p=RGW50NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGW50NL65DHRBTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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1000+1.74 EUR
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RGW50NL65DHRBTL datasheet?p=RGW50NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGW50NL65DHRBTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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RGW50NL65HRBTL datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGW50NL65HRBTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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1000+2.98 EUR
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RGW50NL65HRBTL datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGW50NL65HRBTL
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 57A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
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3+8.51 EUR
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BU4927G-TR datasheet?p=BU4927G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4927G-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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BU4927G-TR datasheet?p=BU4927G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4927G-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: 5-SSOP
DigiKey Programmable: Not Verified
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20+1.07 EUR
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BM1390GLV-ZTR datasheet?p=BM1390GLV-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1390GLV-ZTR
Hersteller: Rohm Semiconductor
Description: SENSOR 18.85PSIA
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 10-VFLGA
Output Type: I2C
Mounting Type: Surface Mount
Operating Pressure: 4.35PSI ~ 18.85PSI (30kPa ~ 130kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Port Style: No Port
Maximum Pressure: 290.08PSI (2000kPa)
Produkt ist nicht verfügbar
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BM1390GLV-ZTR datasheet?p=BM1390GLV-Z&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM1390GLV-ZTR
Hersteller: Rohm Semiconductor
Description: SENSOR 18.85PSIA
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 10-VFLGA
Output Type: I2C
Mounting Type: Surface Mount
Operating Pressure: 4.35PSI ~ 18.85PSI (30kPa ~ 130kPa)
Pressure Type: Absolute
Accuracy: ±0.015PSI (±0.1kPa)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Port Style: No Port
Maximum Pressure: 290.08PSI (2000kPa)
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HP8KB6TB1 datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KB6TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 10.5A 8HSOP
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
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HP8KB6TB1 datasheet?p=HP8KB6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KB6TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 10.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
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5+4.36 EUR
10+2.8 EUR
100+1.9 EUR
500+1.52 EUR
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HP8KB7TB1 datasheet?p=HP8KB7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KB7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 16A 8HSOP
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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HP8KB7TB1 datasheet?p=HP8KB7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KB7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 16A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2465 Stücke:
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HP8KC7TB1 datasheet?p=HP8KC7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KC7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Produkt ist nicht verfügbar
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HP8KC7TB1 datasheet?p=HP8KC7&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
HP8KC7TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 13.5A 8HSOP
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2431 Stücke:
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4+6.7 EUR
10+4.38 EUR
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R5011FNX datasheet?p=R5011FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5011FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
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R5011FNJTL datasheet?p=R5011FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R5011FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Produkt ist nicht verfügbar
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LTR18EZPJ9R1 ltr-e.pdf
LTR18EZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES 9.1 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 Ohms
auf Bestellung 75000 Stücke:
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5000+0.057 EUR
10000+0.051 EUR
25000+0.045 EUR
50000+0.042 EUR
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LTR18EZPJ9R1 ltr-e.pdf
LTR18EZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES 9.1 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 Ohms
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53+0.39 EUR
102+0.2 EUR
152+0.14 EUR
178+0.12 EUR
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1000+0.075 EUR
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LTR100JZPJ914 ltr-e.pdf
LTR100JZPJ914
Hersteller: Rohm Semiconductor
Description: RES SMD 910K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 910 kOhms
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4000+0.33 EUR
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LTR100JZPJ914 ltr-e.pdf
LTR100JZPJ914
Hersteller: Rohm Semiconductor
Description: RES SMD 910K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 910 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
24+0.88 EUR
50+0.63 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 14 Stücke
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SFR01MZPJ915 sfr-e.pdf
SFR01MZPJ915
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 MOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.026 EUR
Mindestbestellmenge: 10000 Stücke
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SFR01MZPJ915 sfr-e.pdf
SFR01MZPJ915
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 MOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SFR01MZPJ9R1 sfr-e.pdf
SFR01MZPJ9R1
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: -250/ +500ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.026 EUR
Mindestbestellmenge: 10000 Stücke
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SFR01MZPJ9R1 sfr-e.pdf
SFR01MZPJ9R1
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: -250/ +500ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SDR03EZPJ911 sdr-e.pdf
SDR03EZPJ911
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.03 EUR
Mindestbestellmenge: 5000 Stücke
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SDR03EZPJ911 sdr-e.pdf
SDR03EZPJ911
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
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SDR10EZPJ912 sdr-e.pdf
SDR10EZPJ912
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.064 EUR
Mindestbestellmenge: 5000 Stücke
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SDR10EZPJ912 sdr-e.pdf
SDR10EZPJ912
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 9.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
90+0.24 EUR
134+0.15 EUR
157+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
Mindestbestellmenge: 46 Stücke
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SDR10EZPJ910 sdr-e.pdf
SDR10EZPJ910
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.064 EUR
Mindestbestellmenge: 5000 Stücke
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SDR10EZPJ910 sdr-e.pdf
SDR10EZPJ910
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
90+0.24 EUR
134+0.15 EUR
157+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
Mindestbestellmenge: 46 Stücke
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BR24G16FVJ-3AGTE2 datasheet?p=BR24G16FVJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G16FVJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOPBJ
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BR24G16FVJ-3AGTE2 datasheet?p=BR24G16FVJ-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G16FVJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOPBJ
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-BJ
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
33+0.64 EUR
34+0.62 EUR
50+0.61 EUR
100+0.6 EUR
250+0.58 EUR
500+0.57 EUR
1000+0.56 EUR
Mindestbestellmenge: 32 Stücke
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RB298NS100FHTL datasheet?p=RB298NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB298NS100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.94 EUR
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RB298NS100FHTL datasheet?p=RB298NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB298NS100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+3.4 EUR
100+2.7 EUR
500+2.28 EUR
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RB228NS100FHTL datasheet?p=RB228NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.2 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS100FHTL datasheet?p=RB228NS100FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS100FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.2 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
10+2.44 EUR
100+1.94 EUR
500+1.64 EUR
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RB088NS100TL datasheet?p=RB088NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088NS100TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 100V 5A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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RB088NS100TL datasheet?p=RB088NS100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088NS100TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 100V 5A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
10+2.56 EUR
100+1.99 EUR
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ESR10EZPD2701 esr-e.pdf
ESR10EZPD2701
Hersteller: Rohm Semiconductor
Description: RES 2.7K OHM 0.5% 2/5W 0805
Resistance: 2.7 kOhms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.4W, 2/5W
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.071 EUR
Mindestbestellmenge: 5000 Stücke
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