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RGW40NL65DHRBTL RGW40NL65DHRBTL Rohm Semiconductor datasheet?p=RGW40NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH-SPEED FAST SWITCHING TYPE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/129ns
Switching Energy: 110µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 59 nC
Grade: Automotive
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
Qualification: AEC-Q101
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100+4.23 EUR
250+4.02 EUR
500+3.6 EUR
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BU25TA2WHFV-TR BU25TA2WHFV-TR Rohm Semiconductor datasheet?p=BU25TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 200MA HVSOF5
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
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BU25TA2WHFV-TR BU25TA2WHFV-TR Rohm Semiconductor datasheet?p=BU25TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.5V 200MA HVSOF5
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
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VS15VUA1VWMTR VS15VUA1VWMTR Rohm Semiconductor datasheet?p=VS15VUA1VWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 15V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS15VUA1VWMTFTR VS15VUA1VWMTFTR Rohm Semiconductor datasheet?p=VS15VUA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 15V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
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BU46K234G-TL BU46K234G-TL Rohm Semiconductor datasheet?p=BU46K234G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 240ms Minimum
Voltage - Threshold: 2.3V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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BU46K234G-TL BU46K234G-TL Rohm Semiconductor datasheet?p=BU46K234G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 240ms Minimum
Voltage - Threshold: 2.3V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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SFR01MZPF4993 SFR01MZPF4993 Rohm Semiconductor sfr-e.pdf Description: RES SMD 499K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 499 kOhms
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SCT4026DWAHRTL SCT4026DWAHRTL Rohm Semiconductor datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
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SCT4026DWAHRTL SCT4026DWAHRTL Rohm Semiconductor datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
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RB080AR-40T7R RB080AR-40T7R Rohm Semiconductor rb080ar-40t7r-e.pdf Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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RB080AR-40T7R RB080AR-40T7R Rohm Semiconductor rb080ar-40t7r-e.pdf Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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SDR03EZPJ510 SDR03EZPJ510 Rohm Semiconductor sdr-e.pdf Description: RES 51 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 Ohms
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SDR03EZPJ510 SDR03EZPJ510 Rohm Semiconductor sdr-e.pdf Description: RES 51 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 Ohms
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BR24G256FVM-5TR BR24G256FVM-5TR Rohm Semiconductor datasheet?p=BR24G256FVM-5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 256KBIT, IC BUS, HIGH ENDURANCE,
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
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BR24G256FVM-5TR BR24G256FVM-5TR Rohm Semiconductor datasheet?p=BR24G256FVM-5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 256KBIT, IC BUS, HIGH ENDURANCE,
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
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BR24G256FV-3AGTE2 BR24G256FV-3AGTE2 Rohm Semiconductor datasheet?p=BR24G256FV-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 256KBIT I2C 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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RB095T-40HZC9 RB095T-40HZC9 Rohm Semiconductor Description: DIODE ARR SCHOTT 40V 3A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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RB095T-60HZC9 RB095T-60HZC9 Rohm Semiconductor rb095t-60hz-e.pdf Description: DIODE ARR SCHOTT 60V 3A TO-220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
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RB095T-90HZC9 RB095T-90HZC9 Rohm Semiconductor Description: DIODE ARR SCHOTT 90V 3A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Qualification: AEC-Q101
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RB095BM-60TL RB095BM-60TL Rohm Semiconductor Taping_TO252_TL-e.pdf Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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RB225T-60HZC9 RB225T-60HZC9 Rohm Semiconductor datasheet?p=RB225T-60HZ&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE ARR SCHOTT 60V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
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SIR-505STA47 SIR-505STA47 Rohm Semiconductor sir-505sta47%5B1%5D.pdf Description: EMITTER IR 950NM 100MA T 1 3/4
Packaging: Bulk
Package / Case: T 1 3/4
Wavelength: 950nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Forward (Vf) (Typ): 1.38V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 5.6mW/sr @ 50mA
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RB228T100NZC9 RB228T100NZC9 Rohm Semiconductor datasheet?p=RB228T100NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOT 100V 30A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RB228T100HZC9 RB228T100HZC9 Rohm Semiconductor Description: DIODE ARR SCHOT 100V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RB298T100HZC9 RB298T100HZC9 Rohm Semiconductor Description: DIODE ARR SCHOT 100V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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MNR15ERRPJ272 MNR15ERRPJ272 Rohm Semiconductor MNR15ERRPJ_SeriesSpec.pdf Description: RES ARRAY 8 RES 2.7K OHM 1206
Resistance (Ohms): 2.7k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 31mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Number of Resistors: 8
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RB168MM-60TFTR RB168MM-60TFTR Rohm Semiconductor datasheet?p=RB168MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Qualification: AEC-Q101
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RB168MM-60TFTR RB168MM-60TFTR Rohm Semiconductor datasheet?p=RB168MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Qualification: AEC-Q101
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RB168MM200TFTR RB168MM200TFTR Rohm Semiconductor datasheet?p=RB168MM200TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
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RB168MM200TFTR RB168MM200TFTR Rohm Semiconductor datasheet?p=RB168MM200TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
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RB168MM-30TFTR RB168MM-30TFTR Rohm Semiconductor datasheet?p=RB168MM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Qualification: AEC-Q101
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RB168MM-30TFTR RB168MM-30TFTR Rohm Semiconductor datasheet?p=RB168MM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Qualification: AEC-Q101
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RB168MM200TR RB168MM200TR Rohm Semiconductor datasheet?p=RB168MM200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
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RB168MM200TR RB168MM200TR Rohm Semiconductor datasheet?p=RB168MM200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
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LTR18EZPJ241 LTR18EZPJ241 Rohm Semiconductor ltr-e.pdf Description: RES 240 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 240 Ohms
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LTR18EZPJ241 LTR18EZPJ241 Rohm Semiconductor ltr-e.pdf Description: RES 240 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 240 Ohms
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BTD1RVFLT27N102 BTD1RVFLT27N102 Rohm Semiconductor datasheet?p=BTD1RVFL102&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: RASMIDSERIES, 3.6V, 1000PF, DSN0
Tolerance: ±15%
Features: High Reliability, Low Profile
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
Operating Temperature: -55°C ~ 150°C
Height: 0.008" (0.20mm)
Capacitance: 1000 pF
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BTD1RVFLT27N102 BTD1RVFLT27N102 Rohm Semiconductor datasheet?p=BTD1RVFL102&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: RASMIDSERIES, 3.6V, 1000PF, DSN0
Tolerance: ±15%
Features: High Reliability, Low Profile
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
Operating Temperature: -55°C ~ 150°C
Height: 0.008" (0.20mm)
Capacitance: 1000 pF
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ESR03EZPD1582 ESR03EZPD1582 Rohm Semiconductor esr-e.pdf Description: RES 15.8K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15.8 kOhms
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ESR03EZPD1582 ESR03EZPD1582 Rohm Semiconductor esr-e.pdf Description: RES 15.8K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15.8 kOhms
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RB068LB100TBR1 RB068LB100TBR1 Rohm Semiconductor rb068lb100tbr1-e.pdf Description: SUPER LOW IR, 100V 2A, SMBP, SCH
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
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RB068LB100TBR1 RB068LB100TBR1 Rohm Semiconductor rb068lb100tbr1-e.pdf Description: SUPER LOW IR, 100V 2A, SMBP, SCH
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
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LTR100JZPF91R0 LTR100JZPF91R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 91 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
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LTR100JZPF91R0 LTR100JZPF91R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 91 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
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ESR10EZPD1151 ESR10EZPD1151 Rohm Semiconductor esr-e.pdf Description: RES 1.15K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.15 kOhms
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ESR10EZPD1151 ESR10EZPD1151 Rohm Semiconductor esr-e.pdf Description: RES 1.15K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.15 kOhms
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2SC3837KT146N 2SC3837KT146N Rohm Semiconductor 2sc4725.pdf Description: RF TRANS NPN 20V 1.5GHZ SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: SMT3
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2SC3837KT146N 2SC3837KT146N Rohm Semiconductor 2sc4725.pdf Description: RF TRANS NPN 20V 1.5GHZ SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: SMT3
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BD7851FP-BZPE2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7851FP-BZRE2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7851FP-ME2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD2311NVX-LBE2 BD2311NVX-LBE2 Rohm Semiconductor datasheet?p=BD2311NVX-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC GATE DRVR LOW-SIDE 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Inverting
Supplier Device Package: SSON06RX2020
Rise / Fall Time (Typ): 650ps, 700ps
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.8V, 1.7V
Current - Peak Output (Source, Sink): 7A, 5A
Produkt ist nicht verfügbar
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BD2311NVX-LBE2 BD2311NVX-LBE2 Rohm Semiconductor datasheet?p=BD2311NVX-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IC GATE DRVR LOW-SIDE 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Inverting
Supplier Device Package: SSON06RX2020
Rise / Fall Time (Typ): 650ps, 700ps
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.8V, 1.7V
Current - Peak Output (Source, Sink): 7A, 5A
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SLR343BN2T3F SLR343BN2T3F Rohm Semiconductor datasheet?p=SLR343BN2T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED BLUE T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue
Mounting Type: Through Hole
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 3.2V
Lens Color: Colorless
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 470nm
Supplier Device Package: T-1
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
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RX3P12BATC16 RX3P12BATC16 Rohm Semiconductor rx3p12batc16-e.pdf Description: PCH -100V -120A POWER MOSFET: RX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
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ESR10EZPD4702 ESR10EZPD4702 Rohm Semiconductor esr-e.pdf Description: RES 47K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
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ESR10EZPD4702 ESR10EZPD4702 Rohm Semiconductor esr-e.pdf Description: RES 47K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
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ESR03EZPF49R9 ESR03EZPF49R9 Rohm Semiconductor esr-e.pdf Description: RES 49.9 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 Ohms
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ESR03EZPF49R9 ESR03EZPF49R9 Rohm Semiconductor esr-e.pdf Description: RES 49.9 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 Ohms
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RGW40NL65DHRBTL datasheet?p=RGW40NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RGW40NL65DHRBTL
Hersteller: Rohm Semiconductor
Description: HIGH-SPEED FAST SWITCHING TYPE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/129ns
Switching Energy: 110µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 59 nC
Grade: Automotive
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 144 W
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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4+5.76 EUR
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BU25TA2WHFV-TR datasheet?p=BU25TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU25TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 200MA HVSOF5
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
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BU25TA2WHFV-TR datasheet?p=BU25TA2WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU25TA2WHFV-TR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.5V 200MA HVSOF5
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-HVSOF
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.8V @ 200mA
Protection Features: Over Current, Over Temperature
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10+1.78 EUR
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VS15VUA1VWMTR datasheet?p=VS15VUA1VWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS15VUA1VWMTR
Hersteller: Rohm Semiconductor
Description: 15V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 5312 Stücke:
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18+1 EUR
27+0.67 EUR
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VS15VUA1VWMTFTR datasheet?p=VS15VUA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS15VUA1VWMTFTR
Hersteller: Rohm Semiconductor
Description: 15V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.2A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
auf Bestellung 2248 Stücke:
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16+1.16 EUR
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500+0.42 EUR
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BU46K234G-TL datasheet?p=BU46K234G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU46K234G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 240ms Minimum
Voltage - Threshold: 2.3V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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BU46K234G-TL datasheet?p=BU46K234G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU46K234G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 240ms Minimum
Voltage - Threshold: 2.3V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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18+1.02 EUR
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SFR01MZPF4993 sfr-e.pdf
SFR01MZPF4993
Hersteller: Rohm Semiconductor
Description: RES SMD 499K OHM 1% 1/16W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 499 kOhms
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SCT4026DWAHRTL datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
SCT4026DWAHRTL
Hersteller: Rohm Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
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SCT4026DWAHRTL datasheet?p=SCT4026DWAHR&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
SCT4026DWAHRTL
Hersteller: Rohm Semiconductor
Description: 750V, 51A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 880 Stücke:
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1+27.23 EUR
10+19.81 EUR
100+15.21 EUR
500+14.98 EUR
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RB080AR-40T7R rb080ar-40t7r-e.pdf
RB080AR-40T7R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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RB080AR-40T7R rb080ar-40t7r-e.pdf
RB080AR-40T7R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 4A DSN20122
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DSN2012-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 4345 Stücke:
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12+1.5 EUR
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100+0.66 EUR
500+0.53 EUR
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SDR03EZPJ510 sdr-e.pdf
SDR03EZPJ510
Hersteller: Rohm Semiconductor
Description: RES 51 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 Ohms
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SDR03EZPJ510 sdr-e.pdf
SDR03EZPJ510
Hersteller: Rohm Semiconductor
Description: RES 51 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 51 Ohms
auf Bestellung 4940 Stücke:
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84+0.21 EUR
182+0.097 EUR
275+0.064 EUR
325+0.054 EUR
500+0.038 EUR
1000+0.033 EUR
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BR24G256FVM-5TR datasheet?p=BR24G256FVM-5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BR24G256FVM-5TR
Hersteller: Rohm Semiconductor
Description: 256KBIT, IC BUS, HIGH ENDURANCE,
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
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BR24G256FVM-5TR datasheet?p=BR24G256FVM-5&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BR24G256FVM-5TR
Hersteller: Rohm Semiconductor
Description: 256KBIT, IC BUS, HIGH ENDURANCE,
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
auf Bestellung 2740 Stücke:
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12+1.51 EUR
13+1.36 EUR
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100+1.06 EUR
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BR24G256FV-3AGTE2 datasheet?p=BR24G256FV-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G256FV-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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RB095T-40HZC9
RB095T-40HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 3A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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Anzahl Preis
7+2.59 EUR
50+2.08 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.23 EUR
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RB095T-60HZC9 rb095t-60hz-e.pdf
RB095T-60HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 3A TO-220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 997 Stücke:
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50+1.8 EUR
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500+1.33 EUR
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RB095T-90HZC9
RB095T-90HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 3A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Qualification: AEC-Q101
auf Bestellung 996 Stücke:
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7+2.76 EUR
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RB095BM-60TL Taping_TO252_TL-e.pdf
RB095BM-60TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Produkt ist nicht verfügbar
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RB225T-60HZC9 datasheet?p=RB225T-60HZ&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB225T-60HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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Anzahl Preis
4+5.23 EUR
50+2.15 EUR
100+1.97 EUR
500+1.85 EUR
1000+1.77 EUR
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SIR-505STA47 sir-505sta47%5B1%5D.pdf
SIR-505STA47
Hersteller: Rohm Semiconductor
Description: EMITTER IR 950NM 100MA T 1 3/4
Packaging: Bulk
Package / Case: T 1 3/4
Wavelength: 950nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Forward (Vf) (Typ): 1.38V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 5.6mW/sr @ 50mA
auf Bestellung 2000 Stücke:
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2000+0.39 EUR
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RB228T100NZC9 datasheet?p=RB228T100NZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228T100NZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 30A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 938 Stücke:
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8+2.45 EUR
50+1.97 EUR
100+1.62 EUR
500+1.37 EUR
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RB228T100HZC9
RB228T100HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
50+2.96 EUR
100+2.44 EUR
500+2.06 EUR
1000+1.75 EUR
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RB298T100HZC9
RB298T100HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOT 100V 15A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 870 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
50+3.61 EUR
100+2.97 EUR
500+2.51 EUR
1000+2.13 EUR
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MNR15ERRPJ272 MNR15ERRPJ_SeriesSpec.pdf
MNR15ERRPJ272
Hersteller: Rohm Semiconductor
Description: RES ARRAY 8 RES 2.7K OHM 1206
Resistance (Ohms): 2.7k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 31mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Number of Resistors: 8
auf Bestellung 2932 Stücke:
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Anzahl Preis
112+0.16 EUR
223+0.079 EUR
281+0.063 EUR
336+0.052 EUR
397+0.044 EUR
491+0.036 EUR
574+0.031 EUR
1000+0.026 EUR
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RB168MM-60TFTR datasheet?p=RB168MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM-60TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000
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RB168MM-60TFTR datasheet?p=RB168MM-60TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM-60TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 14161 Stücke:
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Anzahl Preis
24+0.76 EUR
30+0.59 EUR
100+0.35 EUR
500+0.33 EUR
1000+0.22 EUR
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RB168MM200TFTR datasheet?p=RB168MM200TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM200TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
Produkt ist nicht verfügbar
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RB168MM200TFTR datasheet?p=RB168MM200TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM200TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
auf Bestellung 2832 Stücke:
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Anzahl Preis
19+0.95 EUR
22+0.83 EUR
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500+0.48 EUR
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RB168MM-30TFTR datasheet?p=RB168MM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM-30TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.17 EUR
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RB168MM-30TFTR datasheet?p=RB168MM-30TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM-30TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 600 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 5995 Stücke:
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Anzahl Preis
28+0.63 EUR
37+0.49 EUR
100+0.29 EUR
500+0.27 EUR
1000+0.18 EUR
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RB168MM200TR datasheet?p=RB168MM200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM200TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
9000+0.26 EUR
21000+0.25 EUR
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RB168MM200TR datasheet?p=RB168MM200&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM200TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 200V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 850 nA @ 200 V
auf Bestellung 26330 Stücke:
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Anzahl Preis
17+1.06 EUR
24+0.74 EUR
100+0.53 EUR
500+0.41 EUR
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LTR18EZPJ241 ltr-e.pdf
LTR18EZPJ241
Hersteller: Rohm Semiconductor
Description: RES 240 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 240 Ohms
Produkt ist nicht verfügbar
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LTR18EZPJ241 ltr-e.pdf
LTR18EZPJ241
Hersteller: Rohm Semiconductor
Description: RES 240 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 240 Ohms
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
100+0.18 EUR
151+0.12 EUR
176+0.1 EUR
500+0.072 EUR
1000+0.063 EUR
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BTD1RVFLT27N102 datasheet?p=BTD1RVFL102&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BTD1RVFLT27N102
Hersteller: Rohm Semiconductor
Description: RASMIDSERIES, 3.6V, 1000PF, DSN0
Tolerance: ±15%
Features: High Reliability, Low Profile
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
Operating Temperature: -55°C ~ 150°C
Height: 0.008" (0.20mm)
Capacitance: 1000 pF
Produkt ist nicht verfügbar
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BTD1RVFLT27N102 datasheet?p=BTD1RVFL102&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BTD1RVFLT27N102
Hersteller: Rohm Semiconductor
Description: RASMIDSERIES, 3.6V, 1000PF, DSN0
Tolerance: ±15%
Features: High Reliability, Low Profile
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
Operating Temperature: -55°C ~ 150°C
Height: 0.008" (0.20mm)
Capacitance: 1000 pF
auf Bestellung 488 Stücke:
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Anzahl Preis
2+12.72 EUR
10+8.49 EUR
25+7.39 EUR
100+6.14 EUR
250+5.53 EUR
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ESR03EZPD1582 esr-e.pdf
ESR03EZPD1582
Hersteller: Rohm Semiconductor
Description: RES 15.8K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15.8 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.057 EUR
Mindestbestellmenge: 5000
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ESR03EZPD1582 esr-e.pdf
ESR03EZPD1582
Hersteller: Rohm Semiconductor
Description: RES 15.8K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15.8 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
91+0.19 EUR
135+0.13 EUR
157+0.11 EUR
500+0.082 EUR
1000+0.073 EUR
Mindestbestellmenge: 46
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RB068LB100TBR1 rb068lb100tbr1-e.pdf
RB068LB100TBR1
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 100V 2A, SMBP, SCH
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
Produkt ist nicht verfügbar
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RB068LB100TBR1 rb068lb100tbr1-e.pdf
RB068LB100TBR1
Hersteller: Rohm Semiconductor
Description: SUPER LOW IR, 100V 2A, SMBP, SCH
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 100 V
auf Bestellung 2962 Stücke:
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Anzahl Preis
9+2.06 EUR
14+1.28 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
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LTR100JZPF91R0 ltr-e.pdf
LTR100JZPF91R0
Hersteller: Rohm Semiconductor
Description: RES SMD 91 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
Produkt ist nicht verfügbar
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LTR100JZPF91R0 ltr-e.pdf
LTR100JZPF91R0
Hersteller: Rohm Semiconductor
Description: RES SMD 91 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
auf Bestellung 3380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
22+0.81 EUR
50+0.58 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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ESR10EZPD1151 esr-e.pdf
ESR10EZPD1151
Hersteller: Rohm Semiconductor
Description: RES 1.15K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.15 kOhms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.062 EUR
Mindestbestellmenge: 5000
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ESR10EZPD1151 esr-e.pdf
ESR10EZPD1151
Hersteller: Rohm Semiconductor
Description: RES 1.15K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.15 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
87+0.2 EUR
126+0.14 EUR
146+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
Mindestbestellmenge: 46
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2SC3837KT146N 2sc4725.pdf
2SC3837KT146N
Hersteller: Rohm Semiconductor
Description: RF TRANS NPN 20V 1.5GHZ SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: SMT3
Produkt ist nicht verfügbar
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2SC3837KT146N 2sc4725.pdf
2SC3837KT146N
Hersteller: Rohm Semiconductor
Description: RF TRANS NPN 20V 1.5GHZ SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: SMT3
auf Bestellung 2909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 21
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BD7851FP-BZPE2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7851FP-BZRE2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD7851FP-ME2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD2311NVX-LBE2 datasheet?p=BD2311NVX-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD2311NVX-LBE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Inverting
Supplier Device Package: SSON06RX2020
Rise / Fall Time (Typ): 650ps, 700ps
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.8V, 1.7V
Current - Peak Output (Source, Sink): 7A, 5A
Produkt ist nicht verfügbar
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BD2311NVX-LBE2 datasheet?p=BD2311NVX-LB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD2311NVX-LBE2
Hersteller: Rohm Semiconductor
Description: IC GATE DRVR LOW-SIDE 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Inverting
Supplier Device Package: SSON06RX2020
Rise / Fall Time (Typ): 650ps, 700ps
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.8V, 1.7V
Current - Peak Output (Source, Sink): 7A, 5A
auf Bestellung 3342 Stücke:
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Anzahl Preis
3+6.48 EUR
10+4.9 EUR
25+4.51 EUR
100+4.08 EUR
250+3.87 EUR
500+3.75 EUR
1000+3.65 EUR
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SLR343BN2T3F datasheet?p=SLR343BN2T&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLR343BN2T3F
Hersteller: Rohm Semiconductor
Description: LED BLUE T-1 T/H
Packaging: Bulk
Package / Case: Radial
Color: Blue
Mounting Type: Through Hole
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 3.2V
Lens Color: Colorless
Viewing Angle: 40°
Height (Max): 5.60mm
Wavelength - Dominant: 470nm
Supplier Device Package: T-1
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
auf Bestellung 2000 Stücke:
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Anzahl Preis
11+1.74 EUR
15+1.22 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.72 EUR
2000+0.69 EUR
Mindestbestellmenge: 11
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RX3P12BATC16 rx3p12batc16-e.pdf
RX3P12BATC16
Hersteller: Rohm Semiconductor
Description: PCH -100V -120A POWER MOSFET: RX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
auf Bestellung 375 Stücke:
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2+11.67 EUR
50+6.37 EUR
100+6.05 EUR
Mindestbestellmenge: 2
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ESR10EZPD4702 esr-e.pdf
ESR10EZPD4702
Hersteller: Rohm Semiconductor
Description: RES 47K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
Produkt ist nicht verfügbar
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ESR10EZPD4702 esr-e.pdf
ESR10EZPD4702
Hersteller: Rohm Semiconductor
Description: RES 47K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
84+0.21 EUR
124+0.14 EUR
144+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 44
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ESR03EZPF49R9 esr-e.pdf
ESR03EZPF49R9
Hersteller: Rohm Semiconductor
Description: RES 49.9 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 Ohms
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.033 EUR
Mindestbestellmenge: 5000
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ESR03EZPF49R9 esr-e.pdf
ESR03EZPF49R9
Hersteller: Rohm Semiconductor
Description: RES 49.9 OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 Ohms
auf Bestellung 5308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
152+0.12 EUR
272+0.065 EUR
1000+0.041 EUR
2500+0.036 EUR
Mindestbestellmenge: 77
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