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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SD756A Produktcode: 79282 |
![]() Gehäuse: TO-92MOD Uceo,V: 120 V Ucbo,V: 120 V Ic,A: 0,05 A ZCODE: THT |
auf Bestellung 13 Stück: Lieferzeit 21-28 Tag (e) |
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2SD774 Produktcode: 79785 |
NEC |
![]() Gehäuse: SP-8 fT: 95 MHz Uceo,V: 50 Ucbo,V: 100 Ic,A: 1 ZCODE: THT |
auf Bestellung 18 Stück: Lieferzeit 21-28 Tag (e) |
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2SD734E | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 30260 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD734E-AA | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 307500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD734F | onsemi |
Description: NPN EPITAXIAL PLANAR SILICON TRA Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 39500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD734F-AA | onsemi |
Description: NPN EPITAXIAL PLANAR SILICON TRA Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 600 mW |
auf Bestellung 157500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD768K01-E#00 | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
auf Bestellung 2679 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD773 | NEC |
NPN 2A 20V 1W 110MHz 2SD773 T2SD773 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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2SD773-T-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 110MHz Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 16 V Power - Max: 1 W |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD774-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 95MHz Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 6117 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD774-T-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Frequency - Transition: 95MHz Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 8983 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD789D-E | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 5049 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD789E-E | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD789ETZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD794A-AZ | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 1634 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD700 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD700D |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD702 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD703 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD704 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD705 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD706 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD707 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD708 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD709 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD710 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD711 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD711A | FUJITSU |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD712 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD712A |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD713 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD715 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD716 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD717 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD718 | TOSHIBA |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD718 | TOSHIBA | 2002 TO-3P |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD72 | TO-39 |
auf Bestellung 697 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD72 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD720 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD721 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD722 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD723 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD724 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD725 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD726 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD727 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD729 | TOS | 01+ TO-3 |
auf Bestellung 4500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD729H |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD72K |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD73 | TOS/HIT | 98+ TO-3 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD730 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD731 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD733 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD733K |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD737 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD738A |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD74 | TOS/HIT | 98+ TO-3 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD741 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD743A |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SD745 |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
2SD756A Produktcode: 79282 |
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Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92MOD
Uceo,V: 120 V
Ucbo,V: 120 V
Ic,A: 0,05 A
ZCODE: THT
Gehäuse: TO-92MOD
Uceo,V: 120 V
Ucbo,V: 120 V
Ic,A: 0,05 A
ZCODE: THT
auf Bestellung 13 Stück:
Lieferzeit 21-28 Tag (e)2SD774 Produktcode: 79785 |
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Hersteller: NEC
Transistoren > Bipolar-Transistoren NPN
Gehäuse: SP-8
fT: 95 MHz
Uceo,V: 50
Ucbo,V: 100
Ic,A: 1
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: SP-8
fT: 95 MHz
Uceo,V: 50
Ucbo,V: 100
Ic,A: 1
ZCODE: THT
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.68 EUR |
10+ | 0.51 EUR |
2SD734E |
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Hersteller: onsemi
Description: 2SD734 - NPN EPITAXIAL PLANAR SI
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: 2SD734 - NPN EPITAXIAL PLANAR SI
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 30260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1025+ | 0.47 EUR |
2SD734E-AA |
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Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 307500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1025+ | 0.47 EUR |
2SD734F |
Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 39500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
2SD734F-AA |
Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Description: NPN EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 157500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.081 EUR |
2SD768K01-E#00 |
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Hersteller: Renesas Electronics Corporation
Description: NPN BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Description: NPN BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
auf Bestellung 2679 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
163+ | 3.01 EUR |
2SD773 |
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.88 EUR |
2SD773-T-AZ |
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Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 110MHz
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 16 V
Power - Max: 1 W
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 110MHz
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 16 V
Power - Max: 1 W
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1159+ | 0.42 EUR |
2SD774-AZ |
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Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 95MHz
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 95MHz
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 6117 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
902+ | 0.54 EUR |
2SD774-T-AZ |
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Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 95MHz
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 95MHz
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 8983 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
902+ | 0.54 EUR |
2SD789D-E |
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Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 5049 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1623+ | 0.29 EUR |
2SD789E-E |
![]() |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1623+ | 0.29 EUR |
2SD789ETZ |
![]() |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1623+ | 0.29 EUR |
2SD794A-AZ |
![]() |
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 1634 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
378+ | 1.28 EUR |
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