Hersteller: PMC-Sierra
NPN 140V 10A 200mA 117W 2N3442G 2N3442 ON Semiconductors T2N3442
Anzahl je Verpackung: 10 Stücke

Hersteller: ON Semiconductor
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray

Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-204 (TO-3)
fT: 80 MHz
Uceo,V: 140
Ucbo,V: 160
Ic,A: 10
h21: 01.12.1972

Transistoren > Bipolar-Transistoren NPN

Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 20...70
Mounting: THT

Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Current gain: 7.5...70
Mounting: THT
Pulsed collector current: 15A
Kind of package: bulk
Frequency: 80MHz

Hersteller: onsemi
Bipolar Transistors - BJT 10A 140V 117W NPN

Hersteller: onsemi
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W

Hersteller: Microchip Technology
Description: TRANS NPN 140V 10A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W

Hersteller: Microchip Technology
Trans GP BJT NPN 140V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray

Hersteller: Microchip Technology
Bipolar Transistors - BJT 140V 10A 6W NPN Power BJT THT

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 140V 10A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W

Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz

Hersteller: onsemi
Description: TRANS NPN 140V 10A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A
Current - Collector Cutoff (Max): 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Frequency - Transition: 80kHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 117 W

Hersteller: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370

Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 140V 10A 6W NPN Power BJT THT

Hersteller: Microchip Technology
Description: TRANS NPN 140V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/307

Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 140V 10A 6W NPN Power BJT THT

Hersteller: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/370

Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 140V 10A 6W NPN Power BJT THT