Hersteller: GOODWORK
Description: PNP 2A 50V 500mW SOT-89

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 240@500MA,2V 500MW 2A PNP SO
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW

Hersteller: TOSHIBA
Description: TOSHIBA - 2SA1213-Y(TE12L,ZC - Bipolarer Einzeltransistor (BJT), PNP, 50 V, 2 A, 1 W, SC-62, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 70hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Verlustleistung: 1W
SVHC: No SVHC (21-Jan-2025)
Bauform - Transistor: SC-62
Dauerkollektorstrom: 2A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 50V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
usEccn: EAR99
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C

Hersteller: KESENES
09+

Hersteller: TOSHIBA
SOT89

Hersteller: TOSHIBA
SOT89

Transistoren > Bipolar-Transistoren PNP
Gehäuse: SC-62
Spannung Uce, V: 50 V
Spannung Ucb, V: 50 V
Strom Ic, A: 2 A
Stromverstärkung h21, max: 240

Hersteller: Toshiba

Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 240@500MA,2V 500MW 2A PNP SO
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW

Hersteller: Micro Commercial Components
Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) SOT-89 T/R

Hersteller: Comchip Technology
Description: TRANS PNP 50V 2A SOT-89-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3L
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW

Hersteller: Comchip Technology
Bipolar Transistors - BJT TRANS PNP 2A 50V SOT-89-3L

Hersteller: Comchip Technology
Description: TRANS PNP 50V 2A SOT-89-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89-3L
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW

Hersteller: Comchip Technology
Bipolar Transistors - BJT TRANS PNP 2A 50V SOT-89-3L

Hersteller: Toshiba
Транзистори

Hersteller: MCC Corp.
SOT-89-3 Транзистори