Suchergebnisse für "7n60b" : 36

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SSS7N60B SSS7N60B
Produktcode: 32907
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Fairchild SSP7N60Buii.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 7
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 1380/38
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 15 Stück
6 Stück - stock Köln
9 Stück - lieferbar in 3-4 Wochen
1+1.13 EUR
10+0.95 EUR
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APT47N60BC3G APT47N60BC3G Microchip Technology APT47N60B_SC3(G)_F.pdf Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.38 EUR
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HGT1S7N60B3 Harris Corporation HRISSA43-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 400 Stücke:
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209+2.17 EUR
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HGT1S7N60B3D Harris Corporation HRISSA44-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 400 Stücke:
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175+2.58 EUR
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HGTD7N60B3 Harris Corporation HRISSA43-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 900 Stücke:
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279+1.62 EUR
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HGTD7N60B3S Harris Corporation HRISSA43-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 703 Stücke:
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271+1.68 EUR
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HGTP7N60B3D HGTP7N60B3D Harris Corporation FAIRS45389-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 16743 Stücke:
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189+2.4 EUR
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HGTP7N60B3D HGTP7N60B3D Fairchild Semiconductor FAIRS45389-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 2147 Stücke:
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189+2.4 EUR
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SSI7N60BTU SSI7N60BTU Fairchild Semiconductor FAIRS17627-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 964 Stücke:
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SSW7N60BTM SSW7N60BTM Fairchild Semiconductor FAIRS17627-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 697 Stücke:
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FQI7N60B
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MDF7N60BTH
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MDF7N60BTH=SSS7N60
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MFD7N60BTH
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SSF7N60B FAIRS43171-1.pdf?t.download=true&u=5oefqw
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SSH7N60B
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SSI7N60B
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SSP7N60B FSC
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SSP7N60B Fairchild 0638
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SSS7N60=MDF7N60BTH
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SSW7N60B FAIRCHILD TO-263
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SSW7N60B FAIRCHILD 07+ TO-263
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APT47N60BC3 (TO-247)
Produktcode: 95890
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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APT47N60BC3G APT47N60BC3G MICROCHIP TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA873D558421874A&compId=APT47N60BC3G.pdf?ci_sign=0699b97c03a1bae742a67f3bdde3db5092a1a926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
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APT77N60BC6 APT77N60BC6 MICROCHIP TECHNOLOGY 77173-apt77n60bc6-apt77n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
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APT77N60BC6 APT77N60BC6 Microchip Technology 77173-apt77n60bc6-apt77n60sc6-datasheet Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT77N60BC6 APT77N60BC6 Microchip Technology APT47N60B_SC3(G)_F.pdf MOSFETs MOSFET COOLMOS 600 V 77 A TO-247
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HGTP7N60B3D HGTP7N60B3D onsemi HGTP7N60B3D%2C%20HGT1S7N60B3DS.pdf Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
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IXGA7N60B IXGA7N60B IXYS Littelfuse_Discrete_IGBTs_PT_IXGA7N60B_Datasheet.PDF IGBTs 14 Amps 600V 2.0 Rds
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IXGA7N60B IXGA7N60B IXYS Description: IGBT PT 600V 14A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
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IXGP7N60B IXGP7N60B IXYS Description: IGBT PT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
Produkt ist nicht verfügbar
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IXGP7N60BD1 IXGP7N60BD1 IXYS Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 10ns/100ns
Switching Energy: 300µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
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APT47N60BC3G MICROSEMI APT47N60B_SC3(G)_F.pdf TO 247/MOSFET N-CH 47A 600V APT47N
Anzahl je Verpackung: 30 Stücke
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APT47N60BCFG MICROSEMI TO 247/FREDFET N-CH 46A 600V APT47N
Anzahl je Verpackung: 30 Stücke
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SSS7N60B
Produktcode: 32907
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SSP7N60Buii.pdf
SSS7N60B
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 600
Idd,A: 7
Rds(on), Ohm: 01.02.2015
Ciss, pF/Qg, nC: 1380/38
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 15 Stück
6 Stück - stock Köln
9 Stück - lieferbar in 3-4 Wochen
Anzahl Preis
1+1.13 EUR
10+0.95 EUR
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APT47N60BC3G APT47N60B_SC3(G)_F.pdf
APT47N60BC3G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 1 Stücke:
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Anzahl Preis
1+20.38 EUR
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HGT1S7N60B3 HRISSA43-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
209+2.17 EUR
Mindestbestellmenge: 209
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HGT1S7N60B3D HRISSA44-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 400 Stücke:
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Anzahl Preis
175+2.58 EUR
Mindestbestellmenge: 175
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HGTD7N60B3 HRISSA43-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: IPAK
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
279+1.62 EUR
Mindestbestellmenge: 279
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HGTD7N60B3S HRISSA43-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 72µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 703 Stücke:
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Anzahl Preis
271+1.68 EUR
Mindestbestellmenge: 271
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HGTP7N60B3D FAIRS45389-1.pdf?t.download=true&u=5oefqw
HGTP7N60B3D
Hersteller: Harris Corporation
Description: IGBT 600V 14A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 37 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 16743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.4 EUR
Mindestbestellmenge: 189
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HGTP7N60B3D FAIRS45389-1.pdf?t.download=true&u=5oefqw
HGTP7N60B3D
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
auf Bestellung 2147 Stücke:
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Anzahl Preis
189+2.4 EUR
Mindestbestellmenge: 189
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SSI7N60BTU FAIRS17627-1.pdf?t.download=true&u=5oefqw
SSI7N60BTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 964 Stücke:
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Anzahl Preis
519+0.88 EUR
Mindestbestellmenge: 519
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SSW7N60BTM FAIRS17627-1.pdf?t.download=true&u=5oefqw
SSW7N60BTM
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 697 Stücke:
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Anzahl Preis
284+1.6 EUR
Mindestbestellmenge: 284
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FQI7N60B
auf Bestellung 5360 Stücke:
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MDF7N60BTH
auf Bestellung 10000 Stücke:
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MDF7N60BTH=SSS7N60
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MFD7N60BTH
auf Bestellung 38547 Stücke:
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SSF7N60B FAIRS43171-1.pdf?t.download=true&u=5oefqw
auf Bestellung 5555 Stücke:
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SSH7N60B
auf Bestellung 450 Stücke:
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SSI7N60B
auf Bestellung 3789 Stücke:
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SSP7N60B
Hersteller: FSC
auf Bestellung 2100 Stücke:
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SSP7N60B
Hersteller: Fairchild
0638
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SSS7N60=MDF7N60BTH
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SSW7N60B
Hersteller: FAIRCHILD
TO-263
auf Bestellung 21000 Stücke:
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SSW7N60B
Hersteller: FAIRCHILD
07+ TO-263
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APT47N60BC3 (TO-247)
Produktcode: 95890
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Transistoren > MOSFET N-CH
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APT47N60BC3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AA873D558421874A&compId=APT47N60BC3G.pdf?ci_sign=0699b97c03a1bae742a67f3bdde3db5092a1a926
APT47N60BC3G
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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APT77N60BC6 77173-apt77n60bc6-apt77n60sc6-datasheet
APT77N60BC6
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 49A; Idm: 272A; 481W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 272A
Power dissipation: 481W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
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APT77N60BC6 77173-apt77n60bc6-apt77n60sc6-datasheet
APT77N60BC6
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT77N60BC6 APT47N60B_SC3(G)_F.pdf
APT77N60BC6
Hersteller: Microchip Technology
MOSFETs MOSFET COOLMOS 600 V 77 A TO-247
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HGTP7N60B3D HGTP7N60B3D%2C%20HGT1S7N60B3DS.pdf
HGTP7N60B3D
Hersteller: onsemi
Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IXGA7N60B Littelfuse_Discrete_IGBTs_PT_IXGA7N60B_Datasheet.PDF
IXGA7N60B
Hersteller: IXYS
IGBTs 14 Amps 600V 2.0 Rds
Produkt ist nicht verfügbar
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IXGA7N60B
IXGA7N60B
Hersteller: IXYS
Description: IGBT PT 600V 14A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
Produkt ist nicht verfügbar
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IXGP7N60B
IXGP7N60B
Hersteller: IXYS
Description: IGBT PT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 9ns/100ns
Switching Energy: 70µJ (on), 300µJ (off)
Test Condition: 480V, 7A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 54 W
Produkt ist nicht verfügbar
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IXGP7N60BD1
IXGP7N60BD1
Hersteller: IXYS
Description: IGBT 600V 14A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 10ns/100ns
Switching Energy: 300µJ (off)
Test Condition: 480V, 7A, 18Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 80 W
Produkt ist nicht verfügbar
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APT47N60BC3G APT47N60B_SC3(G)_F.pdf
Hersteller: MICROSEMI
TO 247/MOSFET N-CH 47A 600V APT47N
Anzahl je Verpackung: 30 Stücke
Produkt ist nicht verfügbar
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APT47N60BCFG
Hersteller: MICROSEMI
TO 247/FREDFET N-CH 46A 600V APT47N
Anzahl je Verpackung: 30 Stücke
Produkt ist nicht verfügbar
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