Hersteller: ST
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220
Kollektor-Emitter-Spannung Uceo, V: 100 V
Kollektor-Basis-Spannung Ucbo, V: 100 V
Kollektorstrom Ic, A: 12 A
Stromverstärkung h21: 20000
Bemerkung: Darlington
Montage: THT

Hersteller: ST
Transistoren > Bipolar-Transistoren NPN
Gehäuse: ISOWATT220
Kollektor-Emitter-Spannung Uceo, V: 100 V
Kollektor-Basis-Spannung Ucbo, V: 100 V
Kollektorstrom Ic, A: 12 A
Montage: THT

Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750

Hersteller: ST
Darl.NPN 12A 100V 80W BDW93C TBDW93c
Anzahl je Verpackung: 50 Stücke

Hersteller: ST
Darl.NPN 12A 100V 80W BDW93C TBDW93c
Anzahl je Verpackung: 50 Stücke

Hersteller: STMicroelectronics
Description: TRANS NPN DARL 100V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Hersteller: STMicroelectronics
Darlington Transistors NPN Power Darlington

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - BDW93C - Darlington-Transistor, Darlington, NPN, 100 V, 80 W, 12 A, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 100hFE
Qualifikation: -
isCanonical: Y
Verlustleistung Pd: 80W
SVHC: No SVHC (25-Jun-2025)
Bauform - HF-Transistor: TO-220
Kollektor-Emitter-Spannung V(br)ceo: 100V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: NPN
usEccn: EAR99
DC-Kollektorstrom: 12A
Betriebstemperatur, max.: 150°C

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 80000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: CHIPNOBO
Transistor Darlington NPN; 20000; 80W, 100V; 12A, -65°C ~ 150°C; Equivalent: BDW93C-ST; BDW93CTU; BDW93C-S; BDW93C-CN CHIPNOBO TBDW93c CNB
Anzahl je Verpackung: 25 Stücke

Hersteller: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 12A; 33W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 33W
Case: TO220FP
Mounting: THT
Kind of package: tube

Hersteller: ST
Transistor NPN; 20000; 33W, 100V; 12A, -65°C ~ 150°C; BDW93CFP TBDW93cfp
Anzahl je Verpackung: 50 Stücke

Hersteller: STMicroelectronics
Description: TRANS NPN DARL 100V 12A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 33 W

Hersteller: STMicroelectronics
Darlington Transistors NPN Power Darlington

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 33000mW 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 33000mW 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 33000mW 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 33000mW 3-Pin(3+Tab) TO-220FP Tube

Hersteller: ST
TO-220FP

Hersteller: STM
PNP Дарлингтон, Uкэ=100V, Iк=12A (15 имп.), h21=100-20000, 80Вт, TO-220 (комплементарный BDW93C) Транзистори

Hersteller: ST
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220F
Kollektor-Emitter-Spannung Uceo, V: 100 V
Kollektor-Basis-Spannung Ucbo, V: 100 V
Kollektorstrom Ic, A: 12 A
Stromverstärkung h21: 2000
Bemerkung: Darlington

Transistoren > Bipolar-Transistoren NPN

Hersteller: onsemi
Darlington Transistors NPN Epitaxial Sil

Hersteller: onsemi
Description: TRANS NPN DARL 100V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Hersteller: Microchip / Microsemi

Hersteller: Bourns
Darlington Transistors 80W 12A NPN

Hersteller: Bourns Inc.
Description: TRANS NPN DARL 100V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W

Hersteller: STMicroelectronics
Trans Darlington NPN 100V 12A 33000mW 3-Pin(3+Tab) TO-220FP Tube

Hersteller: onsemi
Description: TRANS NPN DARL 100V 12A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Hersteller: onsemi
Description: TRANS NPN DARL 100V 12A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Hersteller: STMicroelectronics
Транзистор складений Дарлінгтона, Ptot, Вт = 80, Тип стр. = NPN, Uceo, В = 100, Ic = 12 А, Тип монт. = вивідний, hFE = 750 @ 5 A, 3 В, Icutoff-max = 1 мА, Uceo(sat), В @ Ic, Ib = 3 @ 100 мA, 10 A, Тексп, °С = -65...+150,... Транзистори Корпус: TO-220-3 Од
Anzahl je Verpackung: 50 Stücke

Hersteller: STM
NPN Дарлингтон, Uкэ=100V, Iк=12A (15 имп.), h21=100-20000, 80Вт, TO-220 (комплементарный BDW94C) Транзистори

Hersteller: Bourns
Транзистори

Hersteller: STM
NPN Дарлингтон, Uкэ=100V, Iк=12A (15 имп.), h21=100-20000, 33Вт, TO-220FP (комплементарный BDW94CFP) Транзистори

Hersteller: On Semiconductor
NPN Дарлингтон, Uкэ=100V, Iк=12A, 80Вт, TO-220-3 Транзистори

Hersteller: STM
Транз. Дарлінгтона ВП NPN TO220 Uceo=100V; Ic=12A, Pdmax=80W; hfe=750 Транзистори біполярні

Hersteller: ONS/FAI
PNP Дарлингтон, Uкэ=100V, Iк=12A (15 имп.), h21=100-20000, 80Вт, TO-220 (комплементарный BDW93C) Транзистори

Hersteller: STM
PNP Дарлингтон, Uкэ=100V, Iк=12A (15 имп.), h21=100-20000, 33Вт, TO-220FP (комплементарный BDW93CFP) Транзистори