Suchergebnisse für "ES2D" : > 180
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ES2DAF | ONSEMI |
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A tariffCode: 85411000 Bauform - Diode: DO-214AD Durchlassstoßstrom: 50A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 950mV Sperrverzögerungszeit: 35ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 2 Pins Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: Lead (14-Jun-2023) |
auf Bestellung 6324 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DAF | ON Semiconductor | Diode Switching 200V 2A 2-Pin SMAF T/R |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DAF-T | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 27pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DAF-T | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 27pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DAH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6216 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DALH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DALH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DA_HF | Diodes Inc | Superfast Recovery Rectifier SMA T&R 5K |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DB | MDD |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 3000000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DFL | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DFL | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DFSH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DFSH | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 200V, SUPER FAST RECOV Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DG | SHIKUES |
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK Anzahl je Verpackung: 500 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2DH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2DHE3_A/H | Vishay General Semiconductor | Rectifiers 2A,200V,20ns SMB, UF Rect, SMD |
auf Bestellung 2320 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 7223 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/I | Vishay General Semiconductor | Rectifiers 2A,200V,20ns SMB, UF Rect, SMD |
auf Bestellung 8884 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
auf Bestellung 28800 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
auf Bestellung 25600 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/I | Vishay | Diode Switching 200V 2A Automotive 2-Pin SMB T/R |
auf Bestellung 25600 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DPX | Nexperia USA Inc. |
Description: DIODE GP 200V 2A SOD128/CFP5 Packaging: Bulk Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V |
auf Bestellung 87324 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DSMA | Diotec Semiconductor | Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C |
auf Bestellung 5631 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DSMA | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DSMA | Diotec Electronics | Diode Switching 200V 3A 2-Pin SMA T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DSMA | Diotec Semiconductor | ES2DSMA |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DSMA | Diotec Semiconductor | Diode Switching 200V 3A 2-Pin SMA T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.95V Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 3895 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.95V Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3895 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DV | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DVH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DVRX | Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 2A SOD123W Packaging: Bulk Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 200 nA @ 200 V |
auf Bestellung 58736 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2D_HF | Diodes Incorporated | Rectifiers Superfast Recovery Rectifier SMB T&R 3K |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1775 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2D_R1_00001 | Panjit International Inc. |
Description: SMA, SUPER Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 1254 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2D_R1_00001 | Panjit International Inc. |
Description: SMA, SUPER Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 5400 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2D | ES2D Диоды Ultra fast |
auf Bestellung 1010 Stücke: Lieferzeit 7-21 Tag (e) |
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ES2D-13-F |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2D-E3 | VISHAY |
auf Bestellung 6400 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2D-E3 | VISHAY | 09+ |
auf Bestellung 3218 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2D-E35T |
auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2D-T | MICRO | SMB |
auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2D; (2A 200V); SMD; Диод выпрямительный; 35nS; Корпус: DO-214AB |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DA |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2DA-13 | DIODES | DO214AC |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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ES2DHE3/52T | Vishay |
auf Bestellung 622 Stücke: Lieferzeit 21-28 Tag (e) |
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FES2DE-7 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 2A F1A T&R Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FES2DE-7 | Diodes Incorporated |
Description: DIODE GEN PURP 200V 2A F1A T&R Packaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FES2DE-7 | Diodes Incorporated | Rectifiers FRED GPP Rectifier DO-219AA T&R 3K |
auf Bestellung 2598 Stücke: Lieferzeit 10-14 Tag (e) |
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FES2DEQ-7 | Diodes Incorporated |
Description: DIODE GP 200V 2A DO219AA T&R Packaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 47960 Stücke: Lieferzeit 10-14 Tag (e) |
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FES2DEQ-7 | Diodes Incorporated |
Description: DIODE GP 200V 2A DO219AA T&R Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DAF |
Hersteller: ONSEMI
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A
tariffCode: 85411000
Bauform - Diode: DO-214AD
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 950mV
Sperrverzögerungszeit: 35ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 2A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 2 Pins
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (14-Jun-2023)
Description: ONSEMI - ES2DAF - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 2 A, Einfach, 950 mV, 35 ns, 50 A
tariffCode: 85411000
Bauform - Diode: DO-214AD
Durchlassstoßstrom: 50A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: 950mV
Sperrverzögerungszeit: 35ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 2A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 2 Pins
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 150°C
SVHC: Lead (14-Jun-2023)
auf Bestellung 6324 Stücke:
Lieferzeit 14-21 Tag (e)ES2DAF |
Hersteller: ON Semiconductor
Diode Switching 200V 2A 2-Pin SMAF T/R
Diode Switching 200V 2A 2-Pin SMAF T/R
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)ES2DAF-T |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.11 EUR |
ES2DAF-T |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
40+ | 0.44 EUR |
100+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
2000+ | 0.11 EUR |
ES2DAH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6216 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.16 EUR |
ES2DALH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
32+ | 0.56 EUR |
100+ | 0.34 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
2000+ | 0.19 EUR |
ES2DALH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14000+ | 0.17 EUR |
ES2DA_HF |
Hersteller: Diodes Inc
Superfast Recovery Rectifier SMA T&R 5K
Superfast Recovery Rectifier SMA T&R 5K
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)ES2DB |
Hersteller: MDD
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3000000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6000+ | 0.26 EUR |
ES2DFL |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.081 EUR |
ES2DFL |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
5000+ | 0.098 EUR |
ES2DFSH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
32+ | 0.56 EUR |
100+ | 0.34 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
2000+ | 0.19 EUR |
ES2DFSH |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: 35NS, 2A, 200V, SUPER FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14000+ | 0.17 EUR |
ES2DG |
Hersteller: SHIKUES
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK
Anzahl je Verpackung: 500 Stücke
2A; 600V packaging: tape&reel ES2DG SHIKUES diode rectifying DP ES2DG SHK
Anzahl je Verpackung: 500 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.054 EUR |
ES2DH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
32+ | 0.55 EUR |
100+ | 0.33 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
ES2DH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
ES2DHE3_A/H |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
143+ | 0.5 EUR |
162+ | 0.44 EUR |
187+ | 0.38 EUR |
198+ | 0.36 EUR |
ES2DHE3_A/H |
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 18pF
Case: DO214AA; SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
143+ | 0.5 EUR |
162+ | 0.44 EUR |
187+ | 0.38 EUR |
198+ | 0.36 EUR |
ES2DHE3_A/H |
Hersteller: Vishay General Semiconductor
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
auf Bestellung 2320 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.83 EUR |
10+ | 0.73 EUR |
100+ | 0.51 EUR |
500+ | 0.39 EUR |
750+ | 0.32 EUR |
2250+ | 0.29 EUR |
9750+ | 0.28 EUR |
ES2DHE3_A/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
24+ | 0.74 EUR |
100+ | 0.51 EUR |
ES2DHE3_A/H |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 0.4 EUR |
1500+ | 0.32 EUR |
ES2DHE3_A/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7223 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
24+ | 0.74 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.32 EUR |
ES2DHE3_A/I |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3200+ | 0.29 EUR |
ES2DHE3_A/I |
Hersteller: Vishay General Semiconductor
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
auf Bestellung 8884 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.83 EUR |
10+ | 0.73 EUR |
100+ | 0.51 EUR |
500+ | 0.39 EUR |
1000+ | 0.32 EUR |
3200+ | 0.29 EUR |
9600+ | 0.25 EUR |
ES2DHE3_A/I |
Hersteller: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
auf Bestellung 28800 Stücke:
Lieferzeit 14-21 Tag (e)ES2DHE3_A/I |
Hersteller: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
auf Bestellung 25600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6400+ | 0.3 EUR |
ES2DHE3_A/I |
Hersteller: Vishay
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
Diode Switching 200V 2A Automotive 2-Pin SMB T/R
auf Bestellung 25600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6400+ | 0.3 EUR |
ES2DPX |
Hersteller: Nexperia USA Inc.
Description: DIODE GP 200V 2A SOD128/CFP5
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Description: DIODE GP 200V 2A SOD128/CFP5
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
auf Bestellung 87324 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2959+ | 0.16 EUR |
ES2DSMA |
Hersteller: Diotec Semiconductor
Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C
Rectifiers Diode, Superfast, SMA, 200V, 2A, 150C
auf Bestellung 5631 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 0.98 EUR |
10+ | 0.7 EUR |
100+ | 0.49 EUR |
500+ | 0.43 EUR |
1000+ | 0.4 EUR |
2500+ | 0.29 EUR |
7500+ | 0.15 EUR |
ES2DSMA |
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
750+ | 1.59 EUR |
1500+ | 0.63 EUR |
2250+ | 0.42 EUR |
3000+ | 0.31 EUR |
3750+ | 0.25 EUR |
ES2DSMA |
Hersteller: Diotec Electronics
Diode Switching 200V 3A 2-Pin SMA T/R
Diode Switching 200V 3A 2-Pin SMA T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.13 EUR |
ES2DSMA |
Hersteller: Diotec Semiconductor
Diode Switching 200V 3A 2-Pin SMA T/R
Diode Switching 200V 3A 2-Pin SMA T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7500+ | 0.13 EUR |
ES2DTR |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 3895 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
685+ | 0.1 EUR |
760+ | 0.094 EUR |
930+ | 0.077 EUR |
980+ | 0.073 EUR |
ES2DTR |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Leakage current: 5µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3895 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
685+ | 0.1 EUR |
760+ | 0.094 EUR |
930+ | 0.077 EUR |
980+ | 0.073 EUR |
5000+ | 0.07 EUR |
ES2DV |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.21 EUR |
ES2DV |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.57 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
ES2DVH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
6000+ | 0.18 EUR |
ES2DVH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
32+ | 0.55 EUR |
100+ | 0.33 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
ES2DVRX |
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Bulk
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Description: DIODE GEN PURP 200V 2A SOD123W
Packaging: Bulk
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
auf Bestellung 58736 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
ES2D_HF |
Hersteller: Diodes Incorporated
Rectifiers Superfast Recovery Rectifier SMB T&R 3K
Rectifiers Superfast Recovery Rectifier SMB T&R 3K
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.7 EUR |
10+ | 0.49 EUR |
100+ | 0.25 EUR |
1000+ | 0.18 EUR |
3000+ | 0.15 EUR |
9000+ | 0.13 EUR |
ES2D_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
465+ | 0.15 EUR |
520+ | 0.14 EUR |
620+ | 0.12 EUR |
660+ | 0.11 EUR |
ES2D_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1775 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
465+ | 0.15 EUR |
520+ | 0.14 EUR |
620+ | 0.12 EUR |
660+ | 0.11 EUR |
3600+ | 0.1 EUR |
ES2D_R1_00001 |
Hersteller: Panjit International Inc.
Description: SMA, SUPER
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: SMA, SUPER
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1254 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
32+ | 0.55 EUR |
100+ | 0.28 EUR |
500+ | 0.25 EUR |
ES2D_R1_00001 |
Hersteller: Panjit International Inc.
Description: SMA, SUPER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: SMA, SUPER
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1800+ | 0.19 EUR |
3600+ | 0.17 EUR |
ES2D; (2A 200V); SMD; Диод выпрямительный; 35nS; Корпус: DO-214AB |
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)FES2DE-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
FES2DE-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A F1A T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
FES2DE-7 |
Hersteller: Diodes Incorporated
Rectifiers FRED GPP Rectifier DO-219AA T&R 3K
Rectifiers FRED GPP Rectifier DO-219AA T&R 3K
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.65 EUR |
10+ | 0.46 EUR |
100+ | 0.23 EUR |
1000+ | 0.16 EUR |
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
FES2DEQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
31+ | 0.59 EUR |
100+ | 0.41 EUR |
500+ | 0.32 EUR |
1000+ | 0.26 EUR |
FES2DEQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 200V 2A DO219AA T&R
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
9000+ | 0.2 EUR |