
ES2DHE3_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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750+ | 0.25 EUR |
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Technische Details ES2DHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote ES2DHE3_A/H nach Preis ab 0.28 EUR bis 1.13 EUR
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ES2DHE3_A/H | Hersteller : Vishay |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay |
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auf Bestellung 100500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay |
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auf Bestellung 100500 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 1856 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay General Semiconductor |
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auf Bestellung 3480 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2DHE3_A/H | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 7 inch reel Quantity in set/package: 750pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2DHE3_A/H | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 18pF Case: DO214AA; SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 7 inch reel Quantity in set/package: 750pcs. |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2DHE3_A/H | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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ES2DHE3_A/H | Hersteller : Vishay |
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Produkt ist nicht verfügbar |