Hersteller: Infineon
Transistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C; IRF5803 TIRF5803
Anzahl je Verpackung: 25 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Technology: HEXFET®
Kind of channel: enhancement

Hersteller: INFINEON
Description: INFINEON - IRF5803TRPBF - Leistungs-MOSFET, p-Kanal, 40 V, 3.4 A, 0.112 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: No SVHC (21-Jan-2025)

Hersteller: INFINEON
Description: INFINEON - IRF5803TRPBF - Leistungs-MOSFET, p-Kanal, 40 V, 3.4 A, 0.112 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.112ohm
SVHC: No SVHC (21-Jan-2025)

Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R

Hersteller: IR
08+ DIP4

Hersteller: IR

Hersteller: IR

Hersteller: IOR
09+

Hersteller: International Rectifier/Infineon
P-канальний ПТ, Udss, В = 40, Id = 3,4 A, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 1110 @ 25, Qg, нКл = 37 @ 10 В, Rds = 112 мОм @ 3,4 А, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Транзистори Корпус: TSOP-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke

Transistoren > Transistoren P-Kanal-Feld

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TSOP-6
Uds,V: 40
Id,A: 3.4
Rds(on),Om: 0.11
Ciss, pF/Qg, nC: 1110/25
/: SMD

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V

Hersteller: International Rectifier
SO-8 Транзистори

Hersteller: IR
Транзистор P-Channel MOSFET TSOP-6, -40В, -3,4А   Транзистори польові