Hersteller: HGF
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
Transitfrequenz fT: 50 МГц
Kollektor-Emitter-Spannung Uceo, V: 400 В
Kollektor-Basis-Spannung Ucbo, V: 500 В
Kollektorstrom Ic, A: 0,3 А
Stromverstärkung h21: 300
Montage: THT

Hersteller: Fairchild
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
Transitfrequenz fT: 20 MHz
Kollektor-Emitter-Spannung Uceo, V: 400 V
Kollektor-Basis-Spannung Ucbo, V: 500 V
Kollektorstrom Ic, A: 0,3 A
Stromverstärkung h21: 200
Montage: THT

Hersteller: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Case: TO92
Mounting: THT
Frequency: 20MHz

Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.625W
Case: TO92
Current gain: 200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz

Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.3A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.3A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT

Hersteller: LGE
Tranzystor NPN; 200; 625mW; 400V; 300mA; -55°C ~ 150°C; Odpowiednik: MPSA44-LGE; KSP44BU; LP395Z/NOPB; MPSA44BL; MPSA44BK; MPSA44G; MPSA44RL1G; KSP44-GURT; KSP44TA; MPSA44-DIO; MPSA44 TMPSA44
Anzahl je Verpackung: 100 Stücke

Hersteller: REALCHIP
Transistor NPN; 200; 625mW; 400V; 300mA; -55°C ~ 150°C; MPSA44 TO92 RealChip TMPSA44 REA
Anzahl je Verpackung: 100 Stücke

Hersteller: Diotec Semiconductor
Description: TRANS NPN 400V 0.3A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92, 400V, 300mA, NPN

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Ammo

Hersteller: MULTICOMP PRO
Description: MULTICOMP PRO - MPSA44 - Bipolarer Einzeltransistor (BJT), NPN, 400 V, 300 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 50hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Verlustleistung: 625mW
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TO-92
Dauerkollektorstrom: 300mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 400V
productTraceability: No
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Ammo

Hersteller: DIOTEC
Description: DIOTEC - MPSA44 - Bipolarer Einzeltransistor (BJT), NPN, 400 V, 300 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Verlustleistung: 625mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-92
Dauerkollektorstrom: 300mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 400V
productTraceability: No
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Ammo

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Ammo

Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 50MHz

Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92BK, 400V, 300mA, NPN

Hersteller: Diotec Semiconductor
Description: TRANS NPN 400V 0.3A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Bulk

Hersteller: DIOTEC
Description: DIOTEC - MPSA44BK - Bipolarer Einzeltransistor (BJT), NPN, 400 V, 300 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412100
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Verlustleistung: 625mW
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-92
Dauerkollektorstrom: 300mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 400V
productTraceability: No
Wandlerpolarität: NPN
usEccn: EAR99
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Bulk

Hersteller: PHILIPS
03+

Hersteller: ON
07+;

Hersteller: HT SEMI
Tranzystor NPN; 200; 625mW; 400V; 300mA; 50MHz; -55°C ~ 150°C; MPSA44 TO92 HT SEMI TMPSA44 HTSEMI
Anzahl je Verpackung: 100 Stücke

Hersteller: YFW
Transistor NPN; 40; 900mW, 400V; 500mA; 8MHz, -55°C ~ 150°C; Similar to: MPSA44; MPSA44-LGE; KSP44BU; LP395Z/NOPB; MPSA44BL; YFW13003B TO92 YFW TYFW13003B YFW
Anzahl je Verpackung: 100 Stücke

Hersteller: Fairchild
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
Transitfrequenz fT: 50 MHz
Kollektor-Emitter-Spannung Uceo, V: 400 V
Kollektor-Basis-Spannung Ucbo, V: 400 V
Kollektorstrom Ic, A: 0,3 A
Montage: THT

Hersteller: Diodes Incorporated
Bipolar Transistors - BJT

Hersteller: Diotec Semiconductor
Description: TRANS NPN 400V 0.3A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: onsemi
Bipolar Transistors - BJT 300mA 500V NPN

Hersteller: onsemi
Description: BJT TO92 400V NPN 0.625W

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Ammo

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
MPSA44 APM PBFREE

Hersteller: Central Semiconductor
Bipolar Transistors - BJT 400V,300mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
Bipolar Transistors - BJT 400V,300mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
Bipolar Transistors - BJT . .

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 500Vcbo 400Vceo 6.0Vebo 300mA 625mW

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
Bipolar Transistors - BJT 400V,300mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Central Semiconductor
Bipolar Transistors - BJT 400V,300mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Hersteller: Diotec Semiconductor
Trans GP BJT NPN 400V 0.3A 625mW 3-Pin TO-92 Bulk

Hersteller: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: onsemi
Description: TRANS NPN 400V 0.3A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW

Hersteller: Diotec Semiconductor
Транзистор PNP, Ptot, Вт = 0,625, Uceo, В = 400, Ic = 300 мА, Тип монт. = вивідний, Icutoff-max = 100 нА, Тексп, °С = -55...+150,... Транзистори Корпус: TO-92-3 Од. вим: шт
Anzahl je Verpackung: 1 Stücke

Hersteller: NXP
Транзистори

Hersteller: ONS/FAI
TO-92 Транзистори

Hersteller: Diotec
Transistor: NPN, bipolar, 400V, 300mA, 625mW, TO92 Транзистори

Hersteller: On Semiconductor
NPN, Uкэ=400V, Iк=0.3A, h21=40...200, 0.625Вт, TO-92 Транзистори

Hersteller: KEC
Транзистори

Hersteller: On Semiconductor
NPN, Uкэ=400V, Iк=0.3A, h21=40...200, 0.625Вт, TO-92 Транзистори

Hersteller: NXP
Транз. Біпол. МП NPN TO92 Uceo=400V; Ic=0,3A; f=20MHz; Pdmax=0,625W; hfemin=40   Транзистори біполярні