Suchergebnisse für "N5406" : > 120
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SN5406J | TI |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| SN5406J833B |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5408 Produktcode: 2135 |
YJ/MIC |
 Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und SchaltdiodenGehäuse: DO-201 Urev.,V: 1000 Iausricht.,А: 3 Beschreibung: GleichrichterVR=1000 B, IF =3A, IFSM =200A Austauschbar: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407 Монтаж: THT Падіння напруги Vf: 1,2 V |
verfügbar: 11335 Stück
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1N5406 Produktcode: 106897 |
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden |
Produkt ist nicht verfügbar
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SN5406J Produktcode: 62424 |
IC > IC andere 8542 39 90 00 |
Produkt ist nicht verfügbar
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1N5406 | DC COMPONENTS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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1N5406 | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406 | onsemi |
Description: DIODE DO201 600V 3A 175C Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406 | onsemi |
Description: DIODE DO201 600V 3A 175C Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406 | Diotec Semiconductor |
Description: DIODE GEN PURP 600V 3A DO201 Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406 | SMC Diode Solutions |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 0V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406 | Diotec Semiconductor |
Rectifier Diode Switching 600V 3A 1500ns 2-Pin DO-201 Ammo |
Produkt ist nicht verfügbar |
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1N5406 | ON Semiconductor |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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| 1N5406 | Diodes Inc |
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5406 R0 | Taiwan Semiconductor |
Diode Si 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406 R0 | Taiwan Semiconductor |
Diode Si 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406 R0G | Taiwan Semiconductor |
Diode Si 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406-AP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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| 1N5406-AP | Micro Commercial Components (MCC) |
Rectifiers Standard Recovery Rectifiers |
Produkt ist nicht verfügbar |
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1N5406-B | Diodes Incorporated |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-B | Diodes Inc |
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD Bulk |
Produkt ist nicht verfügbar |
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1N5406-B | Rectron |
Rectifiers Vr/600V Io/3A BULK |
Produkt ist nicht verfügbar |
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1N5406-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-E3/54 | Vishay |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406-E3/73 | Vishay |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5406-T | Diodes Incorporated |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-T | Diodes Incorporated |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-T | Diodes Inc |
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406-TP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-TP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406-TP | Micro Commercial Components |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406G | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
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1N5406G | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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1N5406G | SMC Diode Solutions |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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| 1N5406G | Diodes Inc |
Diode Switching 600V 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5406G | ON Semiconductor |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Box |
Produkt ist nicht verfügbar |
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| 1N5406G | Taiwan Semiconductor |
Diode 600V 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5406G | Taiwan Semiconductor |
Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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1N5406G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406G A0G | Taiwan Semiconductor |
Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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1N5406G A0G | Taiwan Semiconductor |
Rectifier Diode 600V 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5406G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406G R0 | Taiwan Semiconductor |
Diode 600V 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5406G R0G | Taiwan Semiconductor |
Diode 600V 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5406G-B | Rectron |
Rectifiers Vr/600V Io/3A BULK |
Produkt ist nicht verfügbar |
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1N5406G-K | Taiwan Semiconductor Corporation |
Description: 3A, 600V, STANDARD RECTIFIER Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406G-K | Taiwan Semiconductor |
Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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1N5406G-K A0G | Taiwan Semiconductor |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5406G-K A0G | Taiwan Semiconductor | Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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| 1N5406G-K B0G | Taiwan Semiconductor |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Bulk |
Produkt ist nicht verfügbar |
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1N5406G-K R0G | Taiwan Semiconductor |
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5406G-K R0G | Taiwan Semiconductor | Rectifiers 3A 600V Standard Rec overy Rectifier |
Produkt ist nicht verfügbar |
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1N5406G-T | Diodes Incorporated |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5406G-T | Rectron |
Rectifiers DO-201AD 3A 600V GP |
Produkt ist nicht verfügbar |
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1N5406GH | Taiwan Semiconductor | Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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1N5406GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1N5406GHA0G | Taiwan Semiconductor |
Rectifier Diode 600V 3A Automotive 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5406GHA0G | Taiwan Semiconductor | Rectifiers 3A, 600V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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1N5406GHB0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
| 1N5408 Produktcode: 2135 |
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Hersteller: YJ/MIC
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-201
Urev.,V: 1000
Iausricht.,А: 3
Beschreibung: GleichrichterVR=1000 B, IF =3A, IFSM =200A
Austauschbar: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407
Монтаж: THT
Падіння напруги Vf: 1,2 V
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-201
Urev.,V: 1000
Iausricht.,А: 3
Beschreibung: GleichrichterVR=1000 B, IF =3A, IFSM =200A
Austauschbar: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407
Монтаж: THT
Падіння напруги Vf: 1,2 V
verfügbar: 11335 Stück
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 0.069 EUR |
| 10+ | 0.049 EUR |
| 100+ | 0.044 EUR |
| 1000+ | 0.042 EUR |
| 1N5406 |
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Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| 1N5406 |
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Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406 |
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Hersteller: onsemi
Description: DIODE DO201 600V 3A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE DO201 600V 3A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: onsemi
Description: DIODE DO201 600V 3A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE DO201 600V 3A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: SMC Diode Solutions
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: Diotec Semiconductor
Rectifier Diode Switching 600V 3A 1500ns 2-Pin DO-201 Ammo
Rectifier Diode Switching 600V 3A 1500ns 2-Pin DO-201 Ammo
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: ON Semiconductor
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406 |
|
Hersteller: Diodes Inc
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
| 1N5406 R0 |
|
Hersteller: Taiwan Semiconductor
Diode Si 600V 3A 2-Pin DO-201AD T/R
Diode Si 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406 R0 |
|
Hersteller: Taiwan Semiconductor
Diode Si 600V 3A 2-Pin DO-201AD T/R
Diode Si 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406 R0G |
|
Hersteller: Taiwan Semiconductor
Diode Si 600V 3A 2-Pin DO-201AD T/R
Diode Si 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406-AP |
|
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-AP |
|
Hersteller: Micro Commercial Components (MCC)
Rectifiers Standard Recovery Rectifiers
Rectifiers Standard Recovery Rectifiers
Produkt ist nicht verfügbar
| 1N5406-B |
|
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-B |
|
Hersteller: Diodes Inc
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD Bulk
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD Bulk
Produkt ist nicht verfügbar
| 1N5406-E3/51 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-E3/54 |
|
Hersteller: Vishay
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406-E3/73 |
|
Hersteller: Vishay
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
| 1N5406-T |
|
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-T |
|
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-T |
|
Hersteller: Diodes Inc
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD T/R
Rectifier Diode Switching 600V 3A 2000ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406-TP |
|
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-TP |
|
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406-TP |
|
Hersteller: Micro Commercial Components
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406G |
|
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
| 1N5406G |
|
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| 1N5406G |
|
Hersteller: SMC Diode Solutions
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406G |
|
Hersteller: ON Semiconductor
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Box
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Box
Produkt ist nicht verfügbar
| 1N5406G |
|
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406G A0G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode 600V 3A 2-Pin DO-201AD Ammo
Rectifier Diode 600V 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
| 1N5406G B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406G R0G |
|
Hersteller: Taiwan Semiconductor
Diode 600V 3A 2-Pin DO-201AD
Diode 600V 3A 2-Pin DO-201AD
Produkt ist nicht verfügbar
| 1N5406G-K |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: 3A, 600V, STANDARD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406G-K |
|
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406G-K A0G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
| 1N5406G-K A0G |
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406G-K B0G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Bulk
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD Bulk
Produkt ist nicht verfügbar
| 1N5406G-K R0G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Rectifier Diode Switching 600V 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
| 1N5406G-K R0G |
Hersteller: Taiwan Semiconductor
Rectifiers 3A 600V Standard Rec overy Rectifier
Rectifiers 3A 600V Standard Rec overy Rectifier
Produkt ist nicht verfügbar
| 1N5406G-T |
|
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| 1N5406GH |
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406GHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| 1N5406GHA0G |
|
Hersteller: Taiwan Semiconductor
Rectifier Diode 600V 3A Automotive 2-Pin DO-201AD Ammo
Rectifier Diode 600V 3A Automotive 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
| 1N5406GHA0G |
Hersteller: Taiwan Semiconductor
Rectifiers 3A, 600V, Standard Recovery Rectifier
Rectifiers 3A, 600V, Standard Recovery Rectifier
Produkt ist nicht verfügbar
| 1N5406GHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar