Hersteller: Motorola
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-3
Uceo,V: 60
Ucbo,V: 100
Ic,A: 15
ZCODE: THT

Hersteller: NIKO
05+

Hersteller: NIKO
STO-252

Hersteller: NIKO
TO252

Hersteller: N/A

Hersteller: NIKO

Hersteller: NIKO
0605+

Hersteller: NIKOS
09+

Hersteller: NIKO-SEM
05+

Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V

Hersteller: onsemi / Fairchild
MOSFETs 60V Single N-Ch

Hersteller: Essentra
Screws & Fasteners Snap Rvt,Hg Tmp,Blk,.098 in-.138 inHld

Hersteller: Essentra Components
Description: SNAP RIVET 0.12" POLYSULFONE BLK
Features: Heat Resistant
Packaging: Bulk
Color: Black
Material: Polysulfone
Hole Diameter: 0.124" (3.15mm)
Type: Snap Rivet
Head Height: 0.060" (1.52mm)
Head Diameter: 0.250" (6.35mm) 1/4"
Rivet Diameter: 0.120" (3.05mm)
Rivet Length: 0.220" (5.59mm)
Grip Range: 0.098" ~ 0.138" (2.50mm ~ 3.51mm)
Part Status: Active

Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO247-3
Mounting: THT
Kind of package: tube

Hersteller: ST
NPN 15A 100V 90W TIP3055 TTIP3055
Anzahl je Verpackung: 30 Stücke

Hersteller: JSMicro Semiconductor
Transistor NPN; 70; 90W; 60V; 15A; 2,5MHz; -65°C ~ 150°C; Equivalent: TIP3055G; TIP3055 JSMICRO TTIP3055 JSM
Anzahl je Verpackung: 30 Stücke

Hersteller: LGE
Tranzystor NPN; Bipolar; 70; 60V; 90W; 15A; -65°C~150°C; Substitute: TIP3055G; TIP3055 TTIP3055 c
Anzahl je Verpackung: 30 Stücke

Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 90W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 90W
Case: TO247-3
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke

Hersteller: ST
NPN 15A 100V 90W TIP3055 TTIP3055
Anzahl je Verpackung: 30 Stücke

Hersteller: STMicroelectronics
Bipolar Transistors - BJT Comp NPN - PNP Epitaxial-Base Trans

Hersteller: STMicroelectronics
Description: TRANS NPN 60V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 90 W

Hersteller: STM
Транз. Біпол. NPN TO-247 Uceo=60V; Ic=15A; Pdmax=90W; hfe=20/70 TIP2955 (PNP)

Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 80W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 80W
Case: TO247-3
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 2.5MHz

Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 80W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 80W
Case: TO247-3
Current gain: 20...70
Mounting: THT
Kind of package: tube
Frequency: 2.5MHz
Anzahl je Verpackung: 1 Stücke

Hersteller: onsemi
Bipolar Transistors - BJT 15A 60V 80W NPN

Hersteller: onsemi
Description: TRANS NPN 60V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 90 W

Hersteller: ON

Hersteller: ON

Hersteller: ON

Hersteller: TO-220
08+ MOT

Hersteller: Fairchild

Hersteller: NSC
98+

Hersteller: FISNAR
Category: Barrels & cartridges
Description: Syringe adapter; blue
Colour: blue
Length: 0.91m
Kit contents: adapter for dispenser; adapter for syringe; hose with a diameter of 1/8"; safety clip
Type of tool: syringe adapter
Soldering equipment features: syringe components must be ordered separately
Applications of soldering equipment: for 30ml syringes; for 55ml syringes; for dispensers
Related items: FIS-BAR30-AMB; FIS-BAR30R; FIS-BAR30R-AMB; FIS-BAR30S; FIS-BAR30S-BLK; FIS-BARQX-55R; FIS-BARQX-55R-AMB; FIS-BARQX-55R-BLK
Anzahl je Verpackung: 1 Stücke

Hersteller: FISNAR
Category: Barrels & cartridges
Description: Syringe adapter; blue; 500
Colour: blue
Length: 1.82m
Kit contents: adapter for dispenser; adapter for syringe; hose with a diameter of 1/8"; safety clip
Type of tool: syringe adapter
Soldering equipment features: syringe components must be ordered separately
Applications of soldering equipment: for 30ml syringes; for 55ml syringes; for dispensers
Related items: FIS-BAR30-AMB; FIS-BAR30R; FIS-BAR30R-AMB; FIS-BAR30S-BLK; FIS-BARQX-55R; FIS-BARQX-55R-AMB; FIS-BARQX-55R-BLK
Manufacturer series: 500
Anzahl je Verpackung: 1 Stücke

Hersteller: STM
Транз. Біпол. PNP TO-247 Uceo=60V; Ic=15A; Pdmax=90W; hfe=20/70 TIP3055G (NPN)

Verschiedene Bauteile > Other components 3

Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V

Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 10.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V

Hersteller: onsemi
Description: MOSFET N-CH 60V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V

Hersteller: Central Semiconductor Corp
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W