Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 500 V
Drain-Strom Idd, A: 20 A
Durchlasswiderstand Rds(on), Ohm: 0,25 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1480/40
Montage: THT
ZCODE: 8541290010

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement

Hersteller: STMicroelectronics
MOSFETs N-Ch 500 Volt 20 Amp

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP20NM50 - Leistungs-MOSFET, n-Kanal, 550 V, 20 A, 0.25 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 550V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 192W
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: STP
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ST

Hersteller: ST
TO220F 2007Дк1ФВ

Transistoren > MOSFET N-CH
ZCODE: 8541290010

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
MOSFETs N-Ch 500 Volt 20 Amp

Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V

Hersteller: STMicroelectronics
N-канальний ПТ, Udss, В = 500, Id = 20 А, Ptot, Вт = 192, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 1480 @ 25, Qg, нКл = 56 @ 10 В, Rds = 250 мОм @ 10 A, 10 В, Tексп, °C = -65...+150, Ugs(th) = 5 В @ 250 мкА,... Транзистори Корпус: TO-220-3 Од. вим: шт
Anzahl je Verpackung: 50 Stücke

Hersteller: STM
MOSFET N-CH 500V 20A TO-220 Транзистори

Hersteller: STM
N-кан. MOSFET 550V, 20A, 0.25Ом, -55...+150, TO-220 (MDmesh) Транзистори

Hersteller: STM
N-кан. MOSFET 550V, 20A, 0.25Ом, -55...+150, TO-220ISO (MDmesh) Транзистори