Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 4 A
Durchlasswiderstand Rds(on), Ohm: 2 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 510/18.8
Bemerkung: Isoliertes Gehäuse
Montage: THT
ZCODE: 8541290010

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD

Hersteller: ST
Transistor N-Channel MOSFET; 600V; 30V; 2Ohm; 4A; 25W; -55°C ~ 150°C; STP4NK60ZFP TSTP4NK60ZFP
Anzahl je Verpackung: 10 Stücke

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP4NK60ZFP - Leistungs-MOSFET, n-Kanal, 600 V, 4 A, 2 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3.75V
Verlustleistung: 25W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2ohm

Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube

Hersteller: STMicroelectronics
MOSFETs PowerMESH Zener SuperMESH

Hersteller: STMicroelectronics
N-канальний ПТ, Udss, В = 600, Id = 4 А, Ciss, пФ @ Uds, В = 510 @ 25, Qg, нКл = 26 @ 10 В, Rds = 2 Ом @ 2 A, 10 В, Ugs(th) = 4,5 В @ 50 мкА, Р, Вт = 25 Вт, Тексп, °C = до +150, Тип монт. = вивідний,... Транзистори Корпус: TO-220FP Од. вим: шт
Anzahl je Verpackung: 50 Stücke

Hersteller: STM
N-кан. MOSFET 600V, 4.0A, 1.76Ом, 25Вт, TO-220FP (Zener-Protected SuperMESH) Транзистори

Hersteller: STM
MOSFET силовий транзистор, N-канал; TO-220FP; 600 V; 4 A; 2 Ohm STP4NK60ZFP.pdf Транзистори польові