Hersteller: JSMICRO
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 100 В
Drain-Strom Idd, A: 26 А
Durchlasswiderstand Rds(on), Ohm: 0,06 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 870/30
Montage: THT

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement

Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V

Hersteller: STMicroelectronics
MOSFETs N-Ch 100 Volt 24 Amp

Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 100 V
Drain-Strom Idd, A: 26 A
Durchlasswiderstand Rds(on), Ohm: 0,06 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 870/30
Montage: THT
ZCODE: 8541290010

Hersteller: STM
Замена для IRF540 N-кан. MOSFET100V 26A 85W 0.055 Om TO-220 Транзистори