Hersteller: ST
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220
Spannung Uce, V: 100 V
Spannung Ucb, V: 100 V
Strom Ic, A: 8 A
Stromverstärkung h21, max: 20000
Bemerkung: Darlington

Hersteller: CDIL
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-220
Spannung Uce, V: 100 В
Spannung Ucb, V: 100 В
Strom Ic, A: 8 А
Stromverstärkung h21, max: 20000
Bemerkung: Darlington

Hersteller: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube

Hersteller: LGE
PNP Darl. 8A 100V 2W Supersedes: TIP107G, TIP107TU, BDX54B TIP107 TTIP107
Anzahl je Verpackung: 10 Stücke

Hersteller: STMicroelectronics
Darlington Transistors PNP Power Darlington

Hersteller: STMicroelectronics
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: MULTICOMP PRO
Description: MULTICOMP PRO - TIP107 - Darlington-Transistor, PNP, 100 V, 80 W, 8 A, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 200hFE
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 200hFE
Qualifikation: -
isCanonical: Y
MSL: -
Verlustleistung Pd: 80W
Verlustleistung: 80W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220
Bauform - HF-Transistor: TO-220
Kollektor-Emitter-Spannung V(br)ceo: 100V
Dauerkollektorstrom: 8A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 100V
productTraceability: No
Wandlerpolarität: PNP
usEccn: EAR99
DC-Kollektorstrom: 8A
Übergangsfrequenz: -
Betriebstemperatur, max.: 150°C

Hersteller: STMicroelectronics
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - TIP107 - Darlington-Transistor, Darlington, PNP, 100 V, 80 W, 8 A, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
DC-Stromverstärkung hFE: 200hFE
Qualifikation: -
isCanonical: Y
Verlustleistung Pd: 80W
SVHC: No SVHC (25-Jun-2025)
Bauform - HF-Transistor: TO-220
Kollektor-Emitter-Spannung V(br)ceo: 100V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: PNP
usEccn: EAR99
DC-Kollektorstrom: 8A
Betriebstemperatur, max.: 150°C

Hersteller: Central Semiconductor
Darlington Transistors . .

Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm

Hersteller: onsemi
Darlington Transistors 8A 100V Bipolar Power PNP

Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Hersteller: ON Semiconductor
Транзистор PNP Дарлінгтона, Uceo, В = 100, Ic = 8 А, hFE = 1000...20000 @ 3 A, 4 В, Icutoff-max = 50 мкА, Р, Вт = 2 Вт, Тексп, °C = -65...+150, Тип монт. = вивідний,... Транзистори Корпус: TO-220AB Од. вим: шт
Anzahl je Verpackung: 50 Stücke

Hersteller: ST
Transistor PNP; 20000; 80W; 100V; 12A; -65°C ~ 150°C; Replacement: TIP107; BDW 94 C; BDW 94 C; BDW94C TBDW94c
Anzahl je Verpackung: 50 Stücke

Hersteller: STMicroelectronics
Description: TRANS PNP DARL 100V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W

Hersteller: onsemi
Darlington Transistors PNP Epitaxial Sil Darl

Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W

Hersteller: Microchip / Microsemi

Hersteller: Central Semiconductor Corp
Description: 8A 100V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W

Hersteller: On Semiconductor
PNP Дарлингтон, Uкэ=100V, Iк=8A (15 имп.), h21=200...20000, 30Вт, TO-220AB (компл. TIP102) Транзистори

Hersteller: STM
PNP Дарлингтон, Uкэ=100V, Iк=8A (15 имп.), h21=200...20000, 30Вт, TO-220AB (компл. TIP102) Транзистори

Hersteller: On Semiconductor
PNP Дарлингтон, Uкэ=100V, Iк=8A (15 имп.), h21=200...20000, 30Вт, TO-220AB (компл. TIP102) Транзистори

Hersteller: STM
Транз. Біпол. ВП PNP TO220 Uceo=100V; Ic=8A; Pdmax=80W; hfe=1000/20000 (Complementary Power Darlington Transistor)   Транзистори біполярні