Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (166841) > Seite 1116 nach 2781
Foto | Bezeichnung | Hersteller | Beschreibung |
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ST730M50R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 0.3A Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...28V Manufacturer series: ST730 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ST730MR | STMicroelectronics | ST730MR LDO regulated voltage regulators |
Produkt ist nicht verfügbar |
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ST732M28R | STMicroelectronics | ST732M28R LDO unregulated voltage regulators |
Produkt ist nicht verfügbar |
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ST732M33R | STMicroelectronics | ST732M33R LDO unregulated voltage regulators |
Produkt ist nicht verfügbar |
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ST732M36R | STMicroelectronics | ST732M36R LDO unregulated voltage regulators |
Produkt ist nicht verfügbar |
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ST732M50R | STMicroelectronics |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 0.3A Case: SOT23-5 Mounting: SMD Manufacturer series: ST732 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1...3% Number of channels: 1 Input voltage: 2.5...28V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2323 Stücke: Lieferzeit 7-14 Tag (e) |
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ST7FLITE09Y0M6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: ST7 microcontroller; 8MHz; SO16; 2.4÷5.5VDC; A/D 8bit: 5 Interface: SPI Supply voltage: 2.4...5.5V DC Memory: 128B EEPROM; 128B SRAM; 1.5kB FLASH Number of inputs/outputs: 13 Number of 8bit A/D converters: 5 Clock frequency: 8MHz Type of integrated circuit: ST7 microcontroller Case: SO16 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ST8024LTR | STMicroelectronics |
Category: Interfaces others - integrated circuits Description: IC: interface; 2.7÷6.5VDC; half duplex,Smart Card; SMD; TSSOP20 Case: TSSOP20 Mounting: SMD Interface: half duplex; Smart Card Operating temperature: -25...85°C Supply voltage: 2.7...6.5V DC Frequency: 20MHz Type of integrated circuit: interface Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ST890BDR | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 1; SMD; SO8; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 1 Mounting: SMD Case: SO8 On-state resistance: 0.13Ω Kind of package: reel; tape Supply voltage: 2.7...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ST901T | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 4A; 100W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 4A Power dissipation: 100W Case: TO220AB Current gain: 500...3800 Mounting: THT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 208 Stücke: Lieferzeit 7-14 Tag (e) |
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STA120DJ | STMicroelectronics |
Category: RTV - audio integrated circuits Description: IC: audio interface; receiver; 3÷3.6VDC; SO28 Type of integrated circuit: audio interface Kind of integrated circuit: receiver Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201 Mounting: SMD Supply voltage: 3...3.6V DC Case: SO28 Kind of package: tube Anzahl je Verpackung: 700 Stücke |
Produkt ist nicht verfügbar |
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STA540 | STMicroelectronics | STA540 RTV - audio integrated circuits |
Produkt ist nicht verfügbar |
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STB100N10F7 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 320A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB100NF04T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A Mounting: SMD Case: D2PAK Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 300W Polarisation: unipolar Kind of package: reel; tape Technology: STripFET™ II Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 480A Drain-source voltage: 40V Drain current: 120A On-state resistance: 4.6mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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STB10NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB11N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.6A Pulsed drain current: 36A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.48Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 967 Stücke: Lieferzeit 7-14 Tag (e) |
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STB11NK40ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.67A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1059 Stücke: Lieferzeit 7-14 Tag (e) |
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STB11NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 412 Stücke: Lieferzeit 7-14 Tag (e) |
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STB11NM80T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 44A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB120N4F6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 320A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB120NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK Power dissipation: 312W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 77A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB13N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB13NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB13NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.93A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB140NF55T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 142nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB140NF75T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK Mounting: SMD Drain-source voltage: 75V Drain current: 100A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 714 Stücke: Lieferzeit 7-14 Tag (e) |
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STB14NK50ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB14NK60ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB14NM50N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Pulsed drain current: 48A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB160N75F3 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Pulsed drain current: 480A Power dissipation: 330W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB16NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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STB18N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.295Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB18N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 60A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB18NF25 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 250V Drain current: 12A Pulsed drain current: 68A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 29.3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB18NM60ND | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Pulsed drain current: 52A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB19NF20 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB20N95K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB21N90K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK On-state resistance: 0.299Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: D2PAK Drain-source voltage: 900V Drain current: 11.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB23NM50N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB24N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB26NM60N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.6A Pulsed drain current: 80A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB28N65M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB30NF10T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK Power dissipation: 115W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB32N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 119mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB32NM50N | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 62.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB38N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB40N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB40NF10LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±15V Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 581 Stücke: Lieferzeit 7-14 Tag (e) |
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STB40NF20 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Polarisation: unipolar Power dissipation: 160W Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 25A Drain-source voltage: 200V Case: D2PAK Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB42N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB43N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB45N60DM2AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB45N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STB55NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Power dissipation: 95W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB55NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 723 Stücke: Lieferzeit 7-14 Tag (e) |
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STB57N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB60NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 835 Stücke: Lieferzeit 7-14 Tag (e) |
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STB6NK90ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.8A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 943 Stücke: Lieferzeit 7-14 Tag (e) |
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ST730M50R |
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...28V
Manufacturer series: ST730
Anzahl je Verpackung: 1 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...28V
Manufacturer series: ST730
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST730MR |
Hersteller: STMicroelectronics
ST730MR LDO regulated voltage regulators
ST730MR LDO regulated voltage regulators
Produkt ist nicht verfügbar
ST732M28R |
Hersteller: STMicroelectronics
ST732M28R LDO unregulated voltage regulators
ST732M28R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M33R |
Hersteller: STMicroelectronics
ST732M33R LDO unregulated voltage regulators
ST732M33R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M36R |
Hersteller: STMicroelectronics
ST732M36R LDO unregulated voltage regulators
ST732M36R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M50R |
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: ST732
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...3%
Number of channels: 1
Input voltage: 2.5...28V
Anzahl je Verpackung: 1 Stücke
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: ST732
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...3%
Number of channels: 1
Input voltage: 2.5...28V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2323 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.32 EUR |
64+ | 1.13 EUR |
104+ | 0.69 EUR |
109+ | 0.66 EUR |
1000+ | 0.65 EUR |
2500+ | 0.63 EUR |
ST7FLITE09Y0M6 |
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ST7 microcontroller; 8MHz; SO16; 2.4÷5.5VDC; A/D 8bit: 5
Interface: SPI
Supply voltage: 2.4...5.5V DC
Memory: 128B EEPROM; 128B SRAM; 1.5kB FLASH
Number of inputs/outputs: 13
Number of 8bit A/D converters: 5
Clock frequency: 8MHz
Type of integrated circuit: ST7 microcontroller
Case: SO16
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: ST microcontrollers
Description: IC: ST7 microcontroller; 8MHz; SO16; 2.4÷5.5VDC; A/D 8bit: 5
Interface: SPI
Supply voltage: 2.4...5.5V DC
Memory: 128B EEPROM; 128B SRAM; 1.5kB FLASH
Number of inputs/outputs: 13
Number of 8bit A/D converters: 5
Clock frequency: 8MHz
Type of integrated circuit: ST7 microcontroller
Case: SO16
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST8024LTR |
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; 2.7÷6.5VDC; half duplex,Smart Card; SMD; TSSOP20
Case: TSSOP20
Mounting: SMD
Interface: half duplex; Smart Card
Operating temperature: -25...85°C
Supply voltage: 2.7...6.5V DC
Frequency: 20MHz
Type of integrated circuit: interface
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: interface; 2.7÷6.5VDC; half duplex,Smart Card; SMD; TSSOP20
Case: TSSOP20
Mounting: SMD
Interface: half duplex; Smart Card
Operating temperature: -25...85°C
Supply voltage: 2.7...6.5V DC
Frequency: 20MHz
Type of integrated circuit: interface
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST890BDR |
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST901T |
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 100W
Case: TO220AB
Current gain: 500...3800
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 100W
Case: TO220AB
Current gain: 500...3800
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 208 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 1 EUR |
73+ | 0.98 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
1000+ | 0.52 EUR |
STA120DJ |
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Produkt ist nicht verfügbar
STA540 |
Hersteller: STMicroelectronics
STA540 RTV - audio integrated circuits
STA540 RTV - audio integrated circuits
Produkt ist nicht verfügbar
STB100N10F7 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB100NF04T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.06 EUR |
20+ | 3.6 EUR |
24+ | 3.1 EUR |
25+ | 2.93 EUR |
STB10NK60ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
38+ | 1.9 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
STB11NK40ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1059 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.89 EUR |
49+ | 1.49 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
1000+ | 1.06 EUR |
STB11NK50ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 1.86 EUR |
43+ | 1.67 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
STB11NM80T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120N4F6 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120NF10T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB13N60M2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.59 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
200+ | 1.59 EUR |
STB13N80K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NK60ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NM60N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF55T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF75T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.39 EUR |
38+ | 1.9 EUR |
40+ | 1.79 EUR |
STB14NK50ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NM50N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB160N75F3 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB16NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
85+ | 0.85 EUR |
96+ | 0.75 EUR |
111+ | 0.65 EUR |
117+ | 0.61 EUR |
STB18N60DM2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB18NF25 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18NM60ND |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB19NF20 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB20N95K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB21N90K5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB23NM50N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB24N60DM2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB26NM60N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB28N65M2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB30NF10T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32NM50N |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB38N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40N60M2 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40NF10LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.62 EUR |
50+ | 1.44 EUR |
80+ | 0.9 EUR |
84+ | 0.86 EUR |
STB40NF20 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB42N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB43N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB45N60DM2AG |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB45N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB55NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB55NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 723 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.46 EUR |
46+ | 1.59 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
STB57N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
36+ | 1.99 EUR |
41+ | 1.76 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
250+ | 1.37 EUR |
STB6NK90ZT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.68 EUR |
38+ | 1.93 EUR |
40+ | 1.82 EUR |
5000+ | 1.76 EUR |