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STA120DJ STA120DJ STMicroelectronics STA120.pdf Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Produkt ist nicht verfügbar
STA540 STMicroelectronics en.CD00171346.pdf STA540 RTV - audio integrated circuits
Produkt ist nicht verfügbar
STB100N10F7 STMicroelectronics std100n10f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB100NF04T4 STB100NF04T4 STMicroelectronics STx100NF04.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.06 EUR
20+ 3.6 EUR
24+ 3.1 EUR
25+ 2.93 EUR
Mindestbestellmenge: 18
STB10NK60ZT4 STMicroelectronics stb10nk60z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11N65M5 STB11N65M5 STMicroelectronics stb11n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.16 EUR
38+ 1.9 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 34
STB11NK40ZT4 STB11NK40ZT4 STMicroelectronics STB11NK40Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1059 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
49+ 1.49 EUR
63+ 1.14 EUR
66+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 38
STB11NK50ZT4 STB11NK50ZT4 STMicroelectronics en.CD00003024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
43+ 1.67 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 39
STB11NM80T4 STMicroelectronics stb11nm80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120N4F6 STMicroelectronics stb120n4f6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120NF10T4 STB120NF10T4 STMicroelectronics STB120NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB13N60M2 STB13N60M2 STMicroelectronics STB13N60M2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.59 EUR
41+ 1.76 EUR
44+ 1.66 EUR
200+ 1.59 EUR
Mindestbestellmenge: 28
STB13N80K5 STB13N80K5 STMicroelectronics STB13N80K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NK60ZT4 STB13NK60ZT4 STMicroelectronics STB13NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NM60N STB13NM60N STMicroelectronics STB13NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF55T4 STB140NF55T4 STMicroelectronics stb140nf55.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF75T4 STB140NF75T4 STMicroelectronics STx140NF75.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.39 EUR
38+ 1.9 EUR
40+ 1.79 EUR
Mindestbestellmenge: 17
STB14NK50ZT4 STMicroelectronics en.CD00002817.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 STMicroelectronics STB14NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NM50N STB14NM50N STMicroelectronics en.DM00085463.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB160N75F3 STMicroelectronics stb160n75f3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB16NF06LT4 STB16NF06LT4 STMicroelectronics STB16NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
85+ 0.85 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 53
STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18N65M5 STMicroelectronics stb18n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB18NF25 STMicroelectronics STB18NF25.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18NM60ND STMicroelectronics en.DM00085221.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB19NF20 STB19NF20 STMicroelectronics STB19NF20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB20N95K5 STB20N95K5 STMicroelectronics STx20N95K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 STMicroelectronics STx21N90K5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB23NM50N STB23NM50N STMicroelectronics STB23NM50N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB24N60DM2 STB24N60DM2 STMicroelectronics STB24N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB26NM60N STMicroelectronics stb26nm60n.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB28N65M2 STMicroelectronics stb28n65m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB30NF10T4 STB30NF10T4 STMicroelectronics STB30NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32N65M5 STB32N65M5 STMicroelectronics STB32N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32NM50N STMicroelectronics en.DM00060101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB38N65M5 STB38N65M5 STMicroelectronics STB38N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40N60M2 STB40N60M2 STMicroelectronics STW40N60M2-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40NF10LT4 STB40NF10LT4 STMicroelectronics STB40NF10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
50+ 1.44 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
STB40NF20 STMicroelectronics stb40nf20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB42N65M5 STB42N65M5 STMicroelectronics stx42n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB43N65M5 STMicroelectronics en.DM00217114.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB45N60DM2AG STMicroelectronics stb45n60dm2ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB45N65M5 STMicroelectronics stb45n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB55NF06LT4 STB55NF06LT4 STMicroelectronics STB55NF06LT4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB55NF06T4 STB55NF06T4 STMicroelectronics STP55NF06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
57+ 1.27 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 49
STB57N65M5 STB57N65M5 STMicroelectronics STB57N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 STB60NF06LT4 STMicroelectronics STB60NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06T4 STB60NF06T4 STMicroelectronics STB60NF06T4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
41+ 1.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
250+ 1.37 EUR
Mindestbestellmenge: 36
STB6NK90ZT4 STB6NK90ZT4 STMicroelectronics stb6nk90zt4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.68 EUR
38+ 1.93 EUR
40+ 1.82 EUR
5000+ 1.76 EUR
Mindestbestellmenge: 20
STB75NF20 STB75NF20 STMicroelectronics stb75nf20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB75NF75LT4 STB75NF75LT4 STMicroelectronics STB75NF75L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 875 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
26+ 2.79 EUR
32+ 2.26 EUR
34+ 2.13 EUR
250+ 2.06 EUR
Mindestbestellmenge: 23
STB75NF75T4 STMicroelectronics ST%28B%2CP%2975NF75%28FP%29.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB7NK80ZT4 STB7NK80ZT4 STMicroelectronics STB7NK80Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.29 EUR
37+ 1.94 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 32
STB80N20M5 STB80N20M5 STMicroelectronics STB80N20M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB80NF10T4 STB80NF10T4 STMicroelectronics STx80NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB80NF55L-06T4 STB80NF55L-06T4 STMicroelectronics STB80NF55L-06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB8N65M5 STB8N65M5 STMicroelectronics STB8N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.76 EUR
16+ 4.46 EUR
25+ 2.86 EUR
Mindestbestellmenge: 15
STB9NK50ZT4 STB9NK50ZT4 STMicroelectronics STB9NK50Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB9NK60ZT4 STB9NK60ZT4 STMicroelectronics STB9NK60Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STA120DJ STA120.pdf
STA120DJ
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Produkt ist nicht verfügbar
STA540 en.CD00171346.pdf
Hersteller: STMicroelectronics
STA540 RTV - audio integrated circuits
Produkt ist nicht verfügbar
STB100N10F7 std100n10f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB100NF04T4 STx100NF04.pdf
STB100NF04T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.06 EUR
20+ 3.6 EUR
24+ 3.1 EUR
25+ 2.93 EUR
Mindestbestellmenge: 18
STB10NK60ZT4 stb10nk60z.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11N65M5 stb11n65m5.pdf
STB11N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.16 EUR
38+ 1.9 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 34
STB11NK40ZT4 STB11NK40Z.pdf
STB11NK40ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1059 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
49+ 1.49 EUR
63+ 1.14 EUR
66+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 38
STB11NK50ZT4 en.CD00003024.pdf
STB11NK50ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
43+ 1.67 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 39
STB11NM80T4 stb11nm80.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120N4F6 stb120n4f6.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120NF10T4 STB120NF10.pdf
STB120NF10T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB13N60M2 STB13N60M2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.59 EUR
41+ 1.76 EUR
44+ 1.66 EUR
200+ 1.59 EUR
Mindestbestellmenge: 28
STB13N80K5 STB13N80K5.pdf
STB13N80K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NK60ZT4 STB13NK60ZT4.pdf
STB13NK60ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NM60N STB13NM60N.pdf
STB13NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF55T4 stb140nf55.pdf
STB140NF55T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF75T4 STx140NF75.pdf
STB140NF75T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.39 EUR
38+ 1.9 EUR
40+ 1.79 EUR
Mindestbestellmenge: 17
STB14NK50ZT4 en.CD00002817.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4.pdf
STB14NK60ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NM50N en.DM00085463.pdf
STB14NM50N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB160N75F3 stb160n75f3.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB16NF06LT4 STB16NF06LT4.pdf
STB16NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
85+ 0.85 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 53
STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18N65M5 stb18n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB18NF25 STB18NF25.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18NM60ND en.DM00085221.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB19NF20 STB19NF20.pdf
STB19NF20
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB20N95K5 STx20N95K5.pdf
STB20N95K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB21N90K5 STx21N90K5-DTE.pdf
STB21N90K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB23NM50N STB23NM50N.pdf
STB23NM50N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB24N60DM2 STB24N60DM2.pdf
STB24N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB26NM60N stb26nm60n.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB28N65M2 stb28n65m2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB30NF10T4 STB30NF10.pdf
STB30NF10T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32N65M5 STB32N65M5.pdf
STB32N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32NM50N en.DM00060101.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB38N65M5 STB38N65M5.pdf
STB38N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40N60M2 STW40N60M2-DTE.pdf
STB40N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40NF10LT4 STB40NF10L.pdf
STB40NF10LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
50+ 1.44 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
STB40NF20 stb40nf20.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB42N65M5 stx42n65m5.pdf
STB42N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB43N65M5 en.DM00217114.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB45N60DM2AG stb45n60dm2ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB45N65M5 stb45n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB55NF06LT4 description STB55NF06LT4.pdf
STB55NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB55NF06T4 STP55NF06.pdf
STB55NF06T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.49 EUR
57+ 1.27 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 49
STB57N65M5 STB57N65M5.pdf
STB57N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 STB60NF06LT4.pdf
STB60NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06T4 description STB60NF06T4.pdf
STB60NF06T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+1.99 EUR
41+ 1.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
250+ 1.37 EUR
Mindestbestellmenge: 36
STB6NK90ZT4 description stb6nk90zt4.pdf
STB6NK90ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.68 EUR
38+ 1.93 EUR
40+ 1.82 EUR
5000+ 1.76 EUR
Mindestbestellmenge: 20
STB75NF20 stb75nf20.pdf
STB75NF20
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB75NF75LT4 STB75NF75L.pdf
STB75NF75LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 875 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
26+ 2.79 EUR
32+ 2.26 EUR
34+ 2.13 EUR
250+ 2.06 EUR
Mindestbestellmenge: 23
STB75NF75T4 ST%28B%2CP%2975NF75%28FP%29.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 75V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB7NK80ZT4 STB7NK80Z.pdf
STB7NK80ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.29 EUR
37+ 1.94 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 32
STB80N20M5 STB80N20M5.pdf
STB80N20M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB80NF10T4 STx80NF10.pdf
STB80NF10T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 300W; D2PAK
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB80NF55L-06T4 STB80NF55L-06.pdf
STB80NF55L-06T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB8N65M5 STB8N65M5.pdf
STB8N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.76 EUR
16+ 4.46 EUR
25+ 2.86 EUR
Mindestbestellmenge: 15
STB9NK50ZT4 STB9NK50Z.pdf
STB9NK50ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.5A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.5A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB9NK60ZT4 STB9NK60Z.pdf
STB9NK60ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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