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ST730M50R STMicroelectronics st730.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...28V
Manufacturer series: ST730
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST730MR STMicroelectronics st730.pdf ST730MR LDO regulated voltage regulators
Produkt ist nicht verfügbar
ST732M28R STMicroelectronics st732.pdf ST732M28R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M33R STMicroelectronics st732.pdf ST732M33R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M36R STMicroelectronics st732.pdf ST732M36R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M50R ST732M50R STMicroelectronics st732.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: ST732
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...3%
Number of channels: 1
Input voltage: 2.5...28V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2323 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.32 EUR
64+ 1.13 EUR
104+ 0.69 EUR
109+ 0.66 EUR
1000+ 0.65 EUR
2500+ 0.63 EUR
Mindestbestellmenge: 55
ST7FLITE09Y0M6 ST7FLITE09Y0M6 STMicroelectronics ST7FLITE09Y0M6.pdf Category: ST microcontrollers
Description: IC: ST7 microcontroller; 8MHz; SO16; 2.4÷5.5VDC; A/D 8bit: 5
Interface: SPI
Supply voltage: 2.4...5.5V DC
Memory: 128B EEPROM; 128B SRAM; 1.5kB FLASH
Number of inputs/outputs: 13
Number of 8bit A/D converters: 5
Clock frequency: 8MHz
Type of integrated circuit: ST7 microcontroller
Case: SO16
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST8024LTR ST8024LTR STMicroelectronics ST8024L.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; 2.7÷6.5VDC; half duplex,Smart Card; SMD; TSSOP20
Case: TSSOP20
Mounting: SMD
Interface: half duplex; Smart Card
Operating temperature: -25...85°C
Supply voltage: 2.7...6.5V DC
Frequency: 20MHz
Type of integrated circuit: interface
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST890BDR ST890BDR STMicroelectronics ST890.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST901T ST901T STMicroelectronics st901t.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 100W
Case: TO220AB
Current gain: 500...3800
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 208 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
73+ 0.98 EUR
125+ 0.57 EUR
132+ 0.54 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 72
STA120DJ STA120DJ STMicroelectronics STA120.pdf Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Produkt ist nicht verfügbar
STA540 STMicroelectronics en.CD00171346.pdf STA540 RTV - audio integrated circuits
Produkt ist nicht verfügbar
STB100N10F7 STMicroelectronics std100n10f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB100NF04T4 STB100NF04T4 STMicroelectronics STx100NF04.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.06 EUR
20+ 3.6 EUR
24+ 3.1 EUR
25+ 2.93 EUR
Mindestbestellmenge: 18
STB10NK60ZT4 STMicroelectronics stb10nk60z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11N65M5 STB11N65M5 STMicroelectronics stb11n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.16 EUR
38+ 1.9 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 34
STB11NK40ZT4 STB11NK40ZT4 STMicroelectronics STB11NK40Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1059 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
49+ 1.49 EUR
63+ 1.14 EUR
66+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 38
STB11NK50ZT4 STB11NK50ZT4 STMicroelectronics en.CD00003024.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
43+ 1.67 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 39
STB11NM80T4 STMicroelectronics stb11nm80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120N4F6 STMicroelectronics stb120n4f6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120NF10T4 STB120NF10T4 STMicroelectronics STB120NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB13N60M2 STB13N60M2 STMicroelectronics STB13N60M2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.59 EUR
41+ 1.76 EUR
44+ 1.66 EUR
200+ 1.59 EUR
Mindestbestellmenge: 28
STB13N80K5 STB13N80K5 STMicroelectronics STB13N80K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NK60ZT4 STB13NK60ZT4 STMicroelectronics STB13NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NM60N STB13NM60N STMicroelectronics STB13NM60N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF55T4 STB140NF55T4 STMicroelectronics stb140nf55.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF75T4 STB140NF75T4 STMicroelectronics STx140NF75.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.39 EUR
38+ 1.9 EUR
40+ 1.79 EUR
Mindestbestellmenge: 17
STB14NK50ZT4 STMicroelectronics en.CD00002817.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4 STMicroelectronics STB14NK60ZT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NM50N STB14NM50N STMicroelectronics en.DM00085463.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB160N75F3 STMicroelectronics stb160n75f3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB16NF06LT4 STB16NF06LT4 STMicroelectronics STB16NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
85+ 0.85 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 53
STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18N65M5 STMicroelectronics stb18n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB18NF25 STMicroelectronics STB18NF25.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18NM60ND STMicroelectronics en.DM00085221.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB19NF20 STB19NF20 STMicroelectronics STB19NF20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB20N95K5 STB20N95K5 STMicroelectronics STx20N95K5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB21N90K5 STB21N90K5 STMicroelectronics STx21N90K5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB23NM50N STB23NM50N STMicroelectronics STB23NM50N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB24N60DM2 STB24N60DM2 STMicroelectronics STB24N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB26NM60N STMicroelectronics stb26nm60n.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB28N65M2 STMicroelectronics stb28n65m2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB30NF10T4 STB30NF10T4 STMicroelectronics STB30NF10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32N65M5 STB32N65M5 STMicroelectronics STB32N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32NM50N STMicroelectronics en.DM00060101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB38N65M5 STB38N65M5 STMicroelectronics STB38N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40N60M2 STB40N60M2 STMicroelectronics STW40N60M2-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40NF10LT4 STB40NF10LT4 STMicroelectronics STB40NF10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
50+ 1.44 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
STB40NF20 STMicroelectronics stb40nf20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB42N65M5 STB42N65M5 STMicroelectronics stx42n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB43N65M5 STMicroelectronics en.DM00217114.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB45N60DM2AG STMicroelectronics stb45n60dm2ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB45N65M5 STMicroelectronics stb45n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB55NF06LT4 STB55NF06LT4 STMicroelectronics STB55NF06LT4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB55NF06T4 STB55NF06T4 STMicroelectronics STP55NF06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 723 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.46 EUR
46+ 1.59 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 21
STB57N65M5 STB57N65M5 STMicroelectronics STB57N65M5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 STB60NF06LT4 STMicroelectronics STB60NF06LT4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06T4 STB60NF06T4 STMicroelectronics STB60NF06T4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
36+1.99 EUR
41+ 1.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
250+ 1.37 EUR
Mindestbestellmenge: 36
STB6NK90ZT4 STB6NK90ZT4 STMicroelectronics stb6nk90zt4.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.68 EUR
38+ 1.93 EUR
40+ 1.82 EUR
5000+ 1.76 EUR
Mindestbestellmenge: 20
ST730M50R st730.pdf
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...28V
Manufacturer series: ST730
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST730MR st730.pdf
Hersteller: STMicroelectronics
ST730MR LDO regulated voltage regulators
Produkt ist nicht verfügbar
ST732M28R st732.pdf
Hersteller: STMicroelectronics
ST732M28R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M33R st732.pdf
Hersteller: STMicroelectronics
ST732M33R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M36R st732.pdf
Hersteller: STMicroelectronics
ST732M36R LDO unregulated voltage regulators
Produkt ist nicht verfügbar
ST732M50R st732.pdf
ST732M50R
Hersteller: STMicroelectronics
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 0.3A
Case: SOT23-5
Mounting: SMD
Manufacturer series: ST732
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...3%
Number of channels: 1
Input voltage: 2.5...28V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2323 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.32 EUR
64+ 1.13 EUR
104+ 0.69 EUR
109+ 0.66 EUR
1000+ 0.65 EUR
2500+ 0.63 EUR
Mindestbestellmenge: 55
ST7FLITE09Y0M6 ST7FLITE09Y0M6.pdf
ST7FLITE09Y0M6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: ST7 microcontroller; 8MHz; SO16; 2.4÷5.5VDC; A/D 8bit: 5
Interface: SPI
Supply voltage: 2.4...5.5V DC
Memory: 128B EEPROM; 128B SRAM; 1.5kB FLASH
Number of inputs/outputs: 13
Number of 8bit A/D converters: 5
Clock frequency: 8MHz
Type of integrated circuit: ST7 microcontroller
Case: SO16
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST8024LTR ST8024L.pdf
ST8024LTR
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; 2.7÷6.5VDC; half duplex,Smart Card; SMD; TSSOP20
Case: TSSOP20
Mounting: SMD
Interface: half duplex; Smart Card
Operating temperature: -25...85°C
Supply voltage: 2.7...6.5V DC
Frequency: 20MHz
Type of integrated circuit: interface
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST890BDR ST890.pdf
ST890BDR
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 1
Mounting: SMD
Case: SO8
On-state resistance: 0.13Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ST901T st901t.pdf
ST901T
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 100W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 100W
Case: TO220AB
Current gain: 500...3800
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 208 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
73+ 0.98 EUR
125+ 0.57 EUR
132+ 0.54 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 72
STA120DJ STA120.pdf
STA120DJ
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio interface; receiver; 3÷3.6VDC; SO28
Type of integrated circuit: audio interface
Kind of integrated circuit: receiver
Integrated circuit features: interface standards: AES/EBU, IEC 958, S/PDIF, EIAJ CP-340/1201
Mounting: SMD
Supply voltage: 3...3.6V DC
Case: SO28
Kind of package: tube
Anzahl je Verpackung: 700 Stücke
Produkt ist nicht verfügbar
STA540 en.CD00171346.pdf
Hersteller: STMicroelectronics
STA540 RTV - audio integrated circuits
Produkt ist nicht verfügbar
STB100N10F7 std100n10f7.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 70A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 320A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB100NF04T4 STx100NF04.pdf
STB100NF04T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 120A; Idm: 480A
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Technology: STripFET™ II
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 4.6mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.06 EUR
20+ 3.6 EUR
24+ 3.1 EUR
25+ 2.93 EUR
Mindestbestellmenge: 18
STB10NK60ZT4 stb10nk60z.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB11N65M5 stb11n65m5.pdf
STB11N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 5.6A; Idm: 36A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.6A
Pulsed drain current: 36A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 967 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.16 EUR
38+ 1.9 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 34
STB11NK40ZT4 STB11NK40Z.pdf
STB11NK40ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.67A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1059 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.89 EUR
49+ 1.49 EUR
63+ 1.14 EUR
66+ 1.09 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 38
STB11NK50ZT4 en.CD00003024.pdf
STB11NK50ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.3A; Idm: 40A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
43+ 1.67 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 39
STB11NM80T4 stb11nm80.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 44A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120N4F6 stb120n4f6.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB120NF10T4 STB120NF10.pdf
STB120NF10T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 77A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB13N60M2 STB13N60M2.pdf
STB13N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.59 EUR
41+ 1.76 EUR
44+ 1.66 EUR
200+ 1.59 EUR
Mindestbestellmenge: 28
STB13N80K5 STB13N80K5.pdf
STB13N80K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NK60ZT4 STB13NK60ZT4.pdf
STB13NK60ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.2A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB13NM60N STB13NM60N.pdf
STB13NM60N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.93A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF55T4 stb140nf55.pdf
STB140NF55T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 55V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 142nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB140NF75T4 STx140NF75.pdf
STB140NF75T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 310W; D2PAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.39 EUR
38+ 1.9 EUR
40+ 1.79 EUR
Mindestbestellmenge: 17
STB14NK50ZT4 en.CD00002817.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; Idm: 48A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB14NK60ZT4 STB14NK60ZT4.pdf
STB14NK60ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB14NM50N en.DM00085463.pdf
STB14NM50N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; Idm: 48A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB160N75F3 stb160n75f3.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; Idm: 480A; 330W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 330W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB16NF06LT4 STB16NF06LT4.pdf
STB16NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 45W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
85+ 0.85 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 53
STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.295Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18N65M5 stb18n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 60A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 60A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB18NF25 STB18NF25.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 250V; 12A; Idm: 68A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 29.3nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB18NM60ND en.DM00085221.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Pulsed drain current: 52A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB19NF20 STB19NF20.pdf
STB19NF20
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB20N95K5 STx20N95K5.pdf
STB20N95K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB21N90K5 STx21N90K5-DTE.pdf
STB21N90K5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB23NM50N STB23NM50N.pdf
STB23NM50N
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB24N60DM2 STB24N60DM2.pdf
STB24N60DM2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB26NM60N stb26nm60n.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB28N65M2 stb28n65m2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 80A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB30NF10T4 STB30NF10.pdf
STB30NF10T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 115W; D2PAK
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32N65M5 STB32N65M5.pdf
STB32N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 119mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB32NM50N en.DM00060101.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 190W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 62.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB38N65M5 STB38N65M5.pdf
STB38N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40N60M2 STW40N60M2-DTE.pdf
STB40N60M2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB40NF10LT4 STB40NF10L.pdf
STB40NF10LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; D2PAK
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 581 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
50+ 1.44 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
STB40NF20 stb40nf20.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; Idm: 160A; 160W; D2PAK
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Polarisation: unipolar
Power dissipation: 160W
Type of transistor: N-MOSFET
On-state resistance: 45mΩ
Drain current: 25A
Drain-source voltage: 200V
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB42N65M5 stx42n65m5.pdf
STB42N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB43N65M5 en.DM00217114.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB45N60DM2AG stb45n60dm2ag.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB45N65M5 stb45n65m5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 140A; 210W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
STB55NF06LT4 description STB55NF06LT4.pdf
STB55NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB55NF06T4 STP55NF06.pdf
STB55NF06T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 723 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.46 EUR
46+ 1.59 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 21
STB57N65M5 STB57N65M5.pdf
STB57N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26.5A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 STB60NF06LT4.pdf
STB60NF06LT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06T4 description STB60NF06T4.pdf
STB60NF06T4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 835 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+1.99 EUR
41+ 1.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
250+ 1.37 EUR
Mindestbestellmenge: 36
STB6NK90ZT4 description stb6nk90zt4.pdf
STB6NK90ZT4
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.68 EUR
38+ 1.93 EUR
40+ 1.82 EUR
5000+ 1.76 EUR
Mindestbestellmenge: 20
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