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STP20NM60 STMicroelectronics en.CD00002505.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP20NM60FD STP20NM60FD STMicroelectronics STP20NM60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.23 EUR
20+ 3.66 EUR
25+ 2.92 EUR
26+ 2.76 EUR
50+ 2.75 EUR
Mindestbestellmenge: 17
STP20NM60FP STP20NM60FP STMicroelectronics stp20nm60fp.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 192W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 192W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP21N65M5 STMicroelectronics stp21n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP21N90K5 STP21N90K5 STMicroelectronics STx21N90K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 900V; 11.6A; 250W
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
3+ 23.84 EUR
7+ 10.21 EUR
Mindestbestellmenge: 2
STP220N6F7 STMicroelectronics en.DM00122330.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP22N60M6 STMicroelectronics stp22n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP22NM60N STMicroelectronics en.CD00237949.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP23N80K5 STMicroelectronics en.DM00235958.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP23NM50N STMicroelectronics stp23nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP240N10F7 STMicroelectronics en.DM00070204.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24DP05BTR STMicroelectronics en.CD00197065.pdf Category: LED drivers
Description: IC: driver; LED driver; TQFP48; 5÷80mA; 1.3÷20V; Ch: 24; 3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TQFP48
Output current: 5...80mA
Output voltage: 1.3...20V
Number of channels: 24
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V DC
Frequency: 25MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24N60DM2 STMicroelectronics en.DM00099972.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 11A; Idm: 72A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24N60M2 STP24N60M2 STMicroelectronics STx24N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
23+ 3.2 EUR
30+ 2.46 EUR
31+ 2.32 EUR
Mindestbestellmenge: 20
STP24N60M6 STMicroelectronics stp24n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 52.5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24NF10 STP24NF10 STMicroelectronics STP24NF10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
72+1 EUR
78+ 0.93 EUR
85+ 0.84 EUR
99+ 0.73 EUR
104+ 0.69 EUR
Mindestbestellmenge: 72
STP24NM60N STP24NM60N STMicroelectronics stp24nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
24+ 2.97 EUR
Mindestbestellmenge: 11
STP25N60M2-EP STMicroelectronics STP25N60M2-EP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 72A
Mounting: THT
Case: TO220-3
Drain-source voltage: 600V
Drain current: 11.3A
On-state resistance: 188mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP25N80K5 STMicroelectronics en.DM00060492.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N60DM6 STP26N60DM6 STMicroelectronics stp26n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 11A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N60M2 STMicroelectronics en.DM00218389.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 169W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N65DM2 STMicroelectronics stp26n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26NM60N STP26NM60N STMicroelectronics stp26nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 339 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.7 EUR
22+ 3.35 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 20
STP270N8F7 STMicroelectronics en.DM00071594.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.65 EUR
13+ 5.65 EUR
14+ 5.35 EUR
Mindestbestellmenge: 9
STP28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP28N60M2 STP28N60M2 STMicroelectronics STx28N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.39 EUR
19+ 3.95 EUR
23+ 3.17 EUR
24+ 3 EUR
250+ 2.93 EUR
Mindestbestellmenge: 17
STP28N65M2 STMicroelectronics en.DM00150353.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP28NM50N STP28NM50N STMicroelectronics stp28nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
250+ 2.65 EUR
Mindestbestellmenge: 18
STP28NM60ND STMicroelectronics ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Pulsed drain current: 92A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N105K5 STMicroelectronics en.DM00115979.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.05kV; 950mA; Idm: 6A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N80K5 STMicroelectronics en.DM00090142.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N95K5 STMicroelectronics en.DM00096154.pdf STP2N95K5 THT N channel transistors
Produkt ist nicht verfügbar
STP2NK100Z STMicroelectronics en.CD00159991.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2NK90Z STP2NK90Z STMicroelectronics STD2NK90Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
70+ 1.03 EUR
85+ 0.84 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 54
STP30N65M5 STP30N65M5 STMicroelectronics stp30n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP30NF10 STP30NF10 STMicroelectronics STP30NF10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 25A; 115W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 333 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
84+ 0.86 EUR
92+ 0.79 EUR
100+ 0.72 EUR
102+ 0.7 EUR
106+ 0.68 EUR
250+ 0.66 EUR
Mindestbestellmenge: 49
STP30NF20 STP30NF20 STMicroelectronics STP30NF20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.58 EUR
250+ 2.3 EUR
Mindestbestellmenge: 20
STP310N10F7 STP310N10F7 STMicroelectronics STP310N10F7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Technology: DeepGATE™; STripFET™ VII
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.45 EUR
11+ 6.69 EUR
14+ 5.13 EUR
15+ 4.85 EUR
Mindestbestellmenge: 10
STP315N10F7 STMicroelectronics en.DM00096835.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP32NM50N STMicroelectronics en.DM00060101.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60DM6 STP33N60DM6 STMicroelectronics stp33n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60M2 STMicroelectronics en.DM00078147.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60M6 STMicroelectronics stp33n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N65M2 STP33N65M2 STMicroelectronics en.DM00151754.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP34N65M5 STMicroelectronics en.DM00049181.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 17.7A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP34NM60N STP34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
16+ 4.72 EUR
17+ 4.46 EUR
250+ 4.29 EUR
Mindestbestellmenge: 12
STP34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 80.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N60M2-EP STMicroelectronics stp35n60m2-ep.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N65DM2 STMicroelectronics stp35n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP36N60M6 STP36N60M6 STMicroelectronics stp36n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP36NF06L STP36NF06L STMicroelectronics STP36NF06L.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.46 EUR
53+ 1.36 EUR
59+ 1.22 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 50
STP38N65M5 STMicroelectronics en.DM00049157.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3LN80K5 STMicroelectronics en.DM00175102.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.25A; Idm: 8A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3N150 STP3N150 STMicroelectronics STP3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 140W
Polarisation: unipolar
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.71 EUR
12+ 6.03 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 11
STP3N80K5 STMicroelectronics en.DM00090304.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.6A; Idm: 10A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 10A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3NK50Z STP3NK50Z STMicroelectronics stp3nk50z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 9.2A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Pulsed drain current: 9.2A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3NK60Z STP3NK60Z STMicroelectronics STP3NK60Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.39 EUR
94+ 0.77 EUR
115+ 0.62 EUR
133+ 0.54 EUR
141+ 0.51 EUR
Mindestbestellmenge: 52
STP20NM60 en.CD00002505.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.6A; Idm: 80A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP20NM60FD STP20NM60FD.pdf
STP20NM60FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 12.6A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.23 EUR
20+ 3.66 EUR
25+ 2.92 EUR
26+ 2.76 EUR
50+ 2.75 EUR
Mindestbestellmenge: 17
STP20NM60FP description stp20nm60fp.pdf
STP20NM60FP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 192W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 192W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP21N65M5 stp21n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP21N90K5 STx21N90K5-DTE.pdf
STP21N90K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 900V; 11.6A; 250W
On-state resistance: 0.299Ω
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Drain-source voltage: 900V
Drain current: 11.6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
3+ 23.84 EUR
7+ 10.21 EUR
Mindestbestellmenge: 2
STP220N6F7 en.DM00122330.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 237W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP22N60M6 stp22n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP22NM60N en.CD00237949.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 16A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP23N80K5 en.DM00235958.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP23NM50N stp23nm50n.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP240N10F7 en.DM00070204.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24DP05BTR en.CD00197065.pdf
Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; TQFP48; 5÷80mA; 1.3÷20V; Ch: 24; 3÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TQFP48
Output current: 5...80mA
Output voltage: 1.3...20V
Number of channels: 24
Integrated circuit features: fault detection
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 3...5.5V DC
Frequency: 25MHz
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24N60DM2 en.DM00099972.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 11A; Idm: 72A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24N60M2 STx24N60M2-DTE.pdf
STP24N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
23+ 3.2 EUR
30+ 2.46 EUR
31+ 2.32 EUR
Mindestbestellmenge: 20
STP24N60M6 stp24n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 10.7A; Idm: 52.5A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 52.5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP24NF10 STP24NF10.pdf
STP24NF10
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 18A; 85W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
72+1 EUR
78+ 0.93 EUR
85+ 0.84 EUR
99+ 0.73 EUR
104+ 0.69 EUR
Mindestbestellmenge: 72
STP24NM60N stp24nm60n.pdf
STP24NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.51 EUR
24+ 2.97 EUR
Mindestbestellmenge: 11
STP25N60M2-EP STP25N60M2-EP.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 11.3A; Idm: 72A
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 29nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 72A
Mounting: THT
Case: TO220-3
Drain-source voltage: 600V
Drain current: 11.3A
On-state resistance: 188mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP25N80K5 en.DM00060492.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 12.3A; Idm: 78A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N60DM6 stp26n60dm6.pdf
STP26N60DM6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 11A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N60M2 en.DM00218389.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 169W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26N65DM2 stp26n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP26NM60N stp26nm60n.pdf
STP26NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 12.6A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 339 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.7 EUR
22+ 3.35 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 20
STP270N8F7 en.DM00071594.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.65 EUR
13+ 5.65 EUR
14+ 5.35 EUR
Mindestbestellmenge: 9
STP28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 14A; Idm: 84A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 84A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP28N60M2 STx28N60M2-DTE.pdf
STP28N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 14A; 170W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.39 EUR
19+ 3.95 EUR
23+ 3.17 EUR
24+ 3 EUR
250+ 2.93 EUR
Mindestbestellmenge: 17
STP28N65M2 en.DM00150353.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 80A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP28NM50N stp28nm50n.pdf
STP28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
250+ 2.65 EUR
Mindestbestellmenge: 18
STP28NM60ND ST%28B%2CF%2CP%2CW%2928NM60ND_DS.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 14.5A; Idm: 92A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.5A
Pulsed drain current: 92A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N105K5 en.DM00115979.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.05kV; 950mA; Idm: 6A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N80K5 en.DM00090142.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.3A; Idm: 8A; 42W
Case: TO220-3
Mounting: THT
Kind of package: tube
Drain current: 1.3A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Pulsed drain current: 8A
Power dissipation: 42W
Gate charge: 5nC
Polarisation: unipolar
Technology: MDmesh™ K5
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2N95K5 en.DM00096154.pdf
Hersteller: STMicroelectronics
STP2N95K5 THT N channel transistors
Produkt ist nicht verfügbar
STP2NK100Z en.CD00159991.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 1kV
Drain current: 1.6A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16nC
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 7.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP2NK90Z STD2NK90Z.pdf
STP2NK90Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.3A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.3A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
70+ 1.03 EUR
85+ 0.84 EUR
103+ 0.7 EUR
109+ 0.66 EUR
Mindestbestellmenge: 54
STP30N65M5 stp30n65m5.pdf
STP30N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 710V; 13A; Idm: 88A; 140W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 13A
Pulsed drain current: 88A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 139mΩ
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP30NF10 STP30NF10.pdf
STP30NF10
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 25A; 115W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 115W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 333 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
84+ 0.86 EUR
92+ 0.79 EUR
100+ 0.72 EUR
102+ 0.7 EUR
106+ 0.68 EUR
250+ 0.66 EUR
Mindestbestellmenge: 49
STP30NF20 STP30NF20.pdf
STP30NF20
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 19A; 125W; TO220-3
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
250+ 2.3 EUR
Mindestbestellmenge: 20
STP310N10F7 STP310N10F7.pdf
STP310N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; DeepGATE™; unipolar; 100V; 120A; 315W
Type of transistor: N-MOSFET
Technology: DeepGATE™; STripFET™ VII
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.45 EUR
11+ 6.69 EUR
14+ 5.13 EUR
15+ 4.85 EUR
Mindestbestellmenge: 10
STP315N10F7 en.DM00096835.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP32NM50N en.DM00060101.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 13.86A; Idm: 88A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 15.5A; Idm: 96A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60DM6 stp33n60dm6.pdf
STP33N60DM6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 16A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 80A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 128mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60M2 en.DM00078147.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 104A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 104A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 45.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N60M6 stp33n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP33N65M2 en.DM00151754.pdf
STP33N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 96A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 41.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP34N65M5 en.DM00049181.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 17.7A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP34NM60N STW34NM60N-DTE.pdf
STP34NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.28 EUR
13+ 5.65 EUR
16+ 4.72 EUR
17+ 4.46 EUR
250+ 4.29 EUR
Mindestbestellmenge: 12
STP34NM60ND STx34NM60ND_DS.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 80.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N60DM2 STP35N60DM2.pdf
STP35N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N60M2-EP stp35n60m2-ep.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 16A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP35N65DM2 stp35n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP36N60M6 stp36n60m6.pdf
STP36N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP36NF06L description STP36NF06L.pdf
STP36NF06L
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
53+ 1.36 EUR
59+ 1.22 EUR
73+ 0.99 EUR
77+ 0.93 EUR
Mindestbestellmenge: 50
STP38N65M5 en.DM00049157.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3LN80K5 en.DM00175102.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.25A; Idm: 8A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3N150 STP3N150.pdf
STP3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 140W
Polarisation: unipolar
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 64 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.71 EUR
12+ 6.03 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 11
STP3N80K5 en.DM00090304.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.6A; Idm: 10A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 10A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3NK50Z stp3nk50z.pdf
STP3NK50Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 9.2A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Pulsed drain current: 9.2A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STP3NK60Z STP3NK60Z.pdf
STP3NK60Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.51A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.51A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.39 EUR
94+ 0.77 EUR
115+ 0.62 EUR
133+ 0.54 EUR
141+ 0.51 EUR
Mindestbestellmenge: 52
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