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STB13007DT4 STB13007DT4 STMicroelectronics en.CD00116674.pdf Description: TRANS NPN 400V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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STB45NF06 STB45NF06 STMicroelectronics STB_P45NF06.pdf Description: MOSFET N-CH 60V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STB85NF55LT4 STB85NF55LT4 STMicroelectronics en.CD00002824.pdf Description: MOSFET N-CH 55V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STD11NM60N STD11NM60N STMicroelectronics STx11NM60N.pdf Description: MOSFET N-CH 600V 10A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
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STGB10NC60KDT4 STGB10NC60KDT4 STMicroelectronics en.CD00058414.pdf Description: IGBT 600V 20A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 5A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STGD14NC60KT4 STMicroelectronics Description: IGBT 600V 25A 80W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
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STP16CP05MTR STP16CP05MTR STMicroelectronics en.CD00126634.pdf description Description: IC LED DRIVER LINEAR 100MA 24SO
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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STP16CP05TTR STP16CP05TTR STMicroelectronics en.CD00126634.pdf Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STP16CP05XTTR STP16CP05XTTR STMicroelectronics en.CD00126634.pdf Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STP16CPS05MTR STP16CPS05MTR STMicroelectronics en.CD00126635.pdf Description: IC LED DRIVER LINEAR 100MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STP16CPS05XTTR STP16CPS05XTTR STMicroelectronics en.CD00126635.pdf Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STS17NH3LL STS17NH3LL STMicroelectronics en.CD00128409.pdf Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH2002G-TR STTH2002G-TR STMicroelectronics en.CD00110358.pdf Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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STTH212U STTH212U STMicroelectronics en.CD00060993.pdf Description: DIODE STANDARD 1200V 2A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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STTH312B-TR STTH312B-TR STMicroelectronics stth312.pdf Description: DIODE GEN PURP 1.2KV 3A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH3R02QRL STTH3R02QRL STMicroelectronics en.CD00110333.pdf Description: DIODE STANDARD 200V 3A DO15
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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STTH4R02S STTH4R02S STMicroelectronics en.CD00110337.pdf Description: DIODE STANDARD 200V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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STTH512B-TR STTH512B-TR STMicroelectronics en.CD00096465.pdf Description: DIODE STANDARD 1200V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TDE1708DFT TDE1708DFT STMicroelectronics en.CD00123664.pdf Description: IC PWR SWITCH BIPOLAR 1:2 8DFN
Voltage - Load: 6V ~ 48V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -25°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 8-VDFN Exposed Pad
Features: 5V Regulated Output
Packaging: Cut Tape (CT)
Fault Protection: Over Temperature, Reverse Current
Supplier Device Package: 8-DFN (4x4)
Ratio - Input:Output: 1:2
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
Produkt ist nicht verfügbar
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TS3022IDT TS3022IDT STMicroelectronics en.CD00222487.pdf Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
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TSV912IST TSV912IST STMicroelectronics en.CD00127596.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Packaging: Cut Tape (CT)
Current - Output / Channel: 35 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 4.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 4.5V/µs
Current - Supply: 780µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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VIPER53ESPTR-E VIPER53ESPTR-E STMicroelectronics en.CD00084589.pdf Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Power (Watts): 65 W
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VN540SPTR-E VN540SPTR-E STMicroelectronics en.CD00070971.pdf Description: IC PWR DRIVER 1:1 PWRSO10
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 10V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Active
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74LVC04ATTR 74LVC04ATTR STMicroelectronics 74LVC04A.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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ESDA6V1-5M6 ESDA6V1-5M6 STMicroelectronics cd00067848.pdf Description: TVS DIODE 3VWM 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-µQFN (1.45x1.0)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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ESDALC6V1-5M6 ESDALC6V1-5M6 STMicroelectronics en.CD00067850.pdf Description: TVS DIODE 3VWM 6UQFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Breakdown (Min): 6.1V
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 12pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Unidirectional Channels: 5
Supplier Device Package: 6-µQFN (1.45x1.0)
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STSJ100NH3LL STSJ100NH3LL STMicroelectronics en.CD00003171.pdf Description: MOSFET N-CH 30V 100A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC-EP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
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TSM103IDT TSM103IDT STMicroelectronics en.CD00001691.pdf Description: IC AMPLIFIER 8SO
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BAS70FILM BAS70FILM STMicroelectronics CD00126117.pdf Description: DIODE SCHOTTKY 70V 70MA SOT23-3
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BD679 BD679 STMicroelectronics en.CD00000939.pdf Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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Q3108517 Q3108517 STMicroelectronics Description: KIT ESD PROTECT DIO 15 VALUE 5EA
Part Status: Obsolete
Voltage - Breakdown: 6V ~ 12V
Kit Type: ESD Protection
Quantity: 75 Pieces (15 Values - 5 Each)
Mounting Type: Surface Mount
Packaging: Bulk
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Q3067543 STMicroelectronics Description: KIT DIODES 18VALUES 5 EACH
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2STX2220 2STX2220 STMicroelectronics 2STX2220.pdf Description: TRANS PNP 20V 1.5A TO-92
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BUL704 BUL704 STMicroelectronics CD00112540.pdf Description: TRANS NPN 400V 4A TO-220
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STC04IE170HP STC04IE170HP STMicroelectronics STC04IE170HP.pdf Description: TRANS ESBT 1700V 4A TO247-4LHP
Supplier Device Package: TO-247-4L
Applications: Gate Driver
Transistor Type: NPN - Emitter Switched Bipolar
Mounting Type: Through Hole
Current Rating (Amps): 4A
Package / Case: TO-247-4
Voltage - Rated: 1700V (1.7kV)
Packaging: Tube
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STF11NM60N STF11NM60N STMicroelectronics STx11NM60N.pdf Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STGP30NC60W STGP30NC60W STMicroelectronics STGB%2CSTGP%2CSTGW30NC60W.pdf Description: IGBT 600V 60A TO-220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP11NM60N STP11NM60N STMicroelectronics STx11NM60N.pdf Description: MOSFET N-CH 600V 10A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
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STP16CP05B1R STP16CP05B1R STMicroelectronics en.CD00126634.pdf Description: IC LED DRIVER LINEAR 100MA 24DIP
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
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STP16CPS05B1R STP16CPS05B1R STMicroelectronics en.CD00126635.pdf Description: IC LED DRIVER LINEAR 100MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STP65NF06 STP65NF06 STMicroelectronics en.CD00126774.pdf Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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STPS10150CFP STPS10150CFP STMicroelectronics en.CD00002409.pdf Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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STPS10H100CFP STPS10H100CFP STMicroelectronics STPS10H100CT%2CCG%2CCR%2CCFP.pdf Description: DIODE ARR SCHOTT 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
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STPS20S100CFP STPS20S100CFP STMicroelectronics en.CD00051668.pdf Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
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STTH12012TV1 STTH12012TV1 STMicroelectronics en.CD00096475.pdf description Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
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STTH12012TV2 STTH12012TV2 STMicroelectronics en.CD00096475.pdf description Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STTH1210FP STTH1210FP STMicroelectronics en.CD00096485.pdf Description: DIODE GEN PURP 1KV 12A TO220FPAC
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
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STTH212 STTH212 STMicroelectronics en.CD00060993.pdf Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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STTH212RL STTH212RL STMicroelectronics en.CD00060993.pdf Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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STTH3002W STTH3002W STMicroelectronics en.CD00110364.pdf Description: DIODE STANDARD 200V 30A DO247
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
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STTH3010PI STTH3010PI STMicroelectronics en.CD00096486.pdf Description: DIODE STANDARD 1000V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
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STTH6006TV1 STTH6006TV1 STMicroelectronics en.CD00110834.pdf description Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STTH6110TV2 STTH6110TV2 STMicroelectronics en.CD00096489.pdf description Description: DIODE MODULE GP 1000V 30A ISOTOP
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STTH6112TV1 STTH6112TV1 STMicroelectronics en.CD00096473.pdf description Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STTH6112TV2 STTH6112TV2 STMicroelectronics en.CD00096473.pdf description Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STTH806DIRG STTH806DIRG STMicroelectronics en.CD00110836.pdf Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
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STTH810FP STTH810FP STMicroelectronics en.CD00096480.pdf Description: DIODE STD 1000V 8A TO220FPAC
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
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STTH812FP STTH812FP STMicroelectronics en.CD00096467.pdf Description: DIODE STD 1200V 8A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
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STTH9012TV1 STTH9012TV1 STMicroelectronics en.CD00096474.pdf description Description: DIODE MODULE GP 1200V 45A ISOTOP
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
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STTH9012TV2 STTH9012TV2 STMicroelectronics en.CD00096474.pdf description Description: DIODE MODULE GP 1200V 45A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STB13007DT4 en.CD00116674.pdf
STB13007DT4
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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STB45NF06 STB_P45NF06.pdf
STB45NF06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 38A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STB85NF55LT4 en.CD00002824.pdf
STB85NF55LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1736 Stücke:
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4+4.93 EUR
10+3.21 EUR
100+2.23 EUR
500+1.9 EUR
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STD11NM60N STx11NM60N.pdf
STD11NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Produkt ist nicht verfügbar
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STGB10NC60KDT4 en.CD00058414.pdf
STGB10NC60KDT4
Hersteller: STMicroelectronics
Description: IGBT 600V 20A 65W D2PAK
Power - Max: 65 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Gate Charge: 19 nC
Test Condition: 390V, 5A, 10Ohm, 15V
Switching Energy: 55µJ (on), 85µJ (off)
Td (on/off) @ 25°C: 17ns/72ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 266 Stücke:
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Anzahl Preis
6+3.03 EUR
10+1.93 EUR
100+1.3 EUR
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STGD14NC60KT4
Hersteller: STMicroelectronics
Description: IGBT 600V 25A 80W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 22.5ns/116ns
Switching Energy: 82µJ (on), 155µJ (off)
Test Condition: 390V, 7A, 10Ohm, 15V
Gate Charge: 34.4 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
auf Bestellung 1256 Stücke:
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5+3.78 EUR
10+2.44 EUR
100+1.67 EUR
500+1.34 EUR
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STP16CP05MTR description en.CD00126634.pdf
STP16CP05MTR
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24SO
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SO
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 20V
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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7+2.64 EUR
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STP16CP05TTR en.CD00126634.pdf
STP16CP05TTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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7+2.75 EUR
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STP16CP05XTTR en.CD00126634.pdf
STP16CP05XTTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 4262 Stücke:
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8+2.5 EUR
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STP16CPS05MTR en.CD00126635.pdf
STP16CPS05MTR
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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5+3.92 EUR
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STP16CPS05XTTR en.CD00126635.pdf
STP16CPS05XTTR
Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-TSSOP-EP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 6755 Stücke:
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6+3.34 EUR
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100+2.02 EUR
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STS17NH3LL en.CD00128409.pdf
STS17NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH2002G-TR en.CD00110358.pdf
STTH2002G-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1803 Stücke:
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6+3.2 EUR
10+2.04 EUR
100+1.38 EUR
500+1.09 EUR
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STTH212U en.CD00060993.pdf
STTH212U
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 2A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 24356 Stücke:
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Anzahl Preis
20+0.9 EUR
29+0.61 EUR
100+0.45 EUR
500+0.34 EUR
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STTH312B-TR stth312.pdf
STTH312B-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 3A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH3R02QRL en.CD00110333.pdf
STTH3R02QRL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO15
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 20480 Stücke:
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Anzahl Preis
39+0.46 EUR
56+0.32 EUR
100+0.28 EUR
500+0.22 EUR
1000+0.18 EUR
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STTH4R02S en.CD00110337.pdf
STTH4R02S
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
auf Bestellung 28833 Stücke:
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20+0.9 EUR
31+0.57 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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STTH512B-TR en.CD00096465.pdf
STTH512B-TR
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 7936 Stücke:
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Anzahl Preis
16+1.13 EUR
22+0.81 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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TDE1708DFT en.CD00123664.pdf
TDE1708DFT
Hersteller: STMicroelectronics
Description: IC PWR SWITCH BIPOLAR 1:2 8DFN
Voltage - Load: 6V ~ 48V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -25°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 8-VDFN Exposed Pad
Features: 5V Regulated Output
Packaging: Cut Tape (CT)
Fault Protection: Over Temperature, Reverse Current
Supplier Device Package: 8-DFN (4x4)
Ratio - Input:Output: 1:2
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
Produkt ist nicht verfügbar
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TS3022IDT en.CD00222487.pdf
TS3022IDT
Hersteller: STMicroelectronics
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 105ns
Current - Quiescent (Max): 90µA
Voltage - Input Offset (Max): 8mV @ 5V
Current - Input Bias (Max): 0.16µA @ 5V
CMRR, PSRR (Typ): 79dB CMRR
Part Status: Active
auf Bestellung 11559 Stücke:
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Anzahl Preis
7+2.68 EUR
10+1.97 EUR
25+1.79 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.4 EUR
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TSV912IST en.CD00127596.pdf
TSV912IST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Packaging: Cut Tape (CT)
Current - Output / Channel: 35 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 4.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 8 MHz
Slew Rate: 4.5V/µs
Current - Supply: 780µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
auf Bestellung 8928 Stücke:
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Anzahl Preis
10+1.94 EUR
13+1.4 EUR
25+1.27 EUR
100+1.12 EUR
250+1.06 EUR
500+1.01 EUR
1000+0.98 EUR
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VIPER53ESPTR-E en.CD00084589.pdf
VIPER53ESPTR-E
Hersteller: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Cut Tape (CT)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Power (Watts): 65 W
Produkt ist nicht verfügbar
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VN540SPTR-E en.CD00070971.pdf
VN540SPTR-E
Hersteller: STMicroelectronics
Description: IC PWR DRIVER 1:1 PWRSO10
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -25°C ~ 85°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 10V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Active
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12 EUR
10+9.28 EUR
25+8.6 EUR
100+7.85 EUR
250+7.65 EUR
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74LVC04ATTR 74LVC04A.pdf
74LVC04ATTR
Hersteller: STMicroelectronics
Description: IC INVERTER 6CH 1-INP 14TSSOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 6
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESDA6V1-5M6 cd00067848.pdf
ESDA6V1-5M6
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 6UQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 6-µQFN (1.45x1.0)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 994 Stücke:
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Anzahl Preis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
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ESDALC6V1-5M6 en.CD00067850.pdf
ESDALC6V1-5M6
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 6UQFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Breakdown (Min): 6.1V
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 12pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Unidirectional Channels: 5
Supplier Device Package: 6-µQFN (1.45x1.0)
auf Bestellung 22050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
53+0.33 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.19 EUR
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STSJ100NH3LL en.CD00003171.pdf
STSJ100NH3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 100A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC-EP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 12.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Produkt ist nicht verfügbar
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TSM103IDT en.CD00001691.pdf
TSM103IDT
Hersteller: STMicroelectronics
Description: IC AMPLIFIER 8SO
Produkt ist nicht verfügbar
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BAS70FILM CD00126117.pdf
BAS70FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Produkt ist nicht verfügbar
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BD679 en.CD00000939.pdf
BD679
Hersteller: STMicroelectronics
Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
auf Bestellung 76 Stücke:
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Anzahl Preis
15+1.25 EUR
50+0.57 EUR
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Q3108517
Q3108517
Hersteller: STMicroelectronics
Description: KIT ESD PROTECT DIO 15 VALUE 5EA
Part Status: Obsolete
Voltage - Breakdown: 6V ~ 12V
Kit Type: ESD Protection
Quantity: 75 Pieces (15 Values - 5 Each)
Mounting Type: Surface Mount
Packaging: Bulk
Produkt ist nicht verfügbar
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Q3067543
Hersteller: STMicroelectronics
Description: KIT DIODES 18VALUES 5 EACH
Produkt ist nicht verfügbar
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2STX2220 2STX2220.pdf
2STX2220
Hersteller: STMicroelectronics
Description: TRANS PNP 20V 1.5A TO-92
Produkt ist nicht verfügbar
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BUL704 CD00112540.pdf
BUL704
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220
auf Bestellung 2871 Stücke:
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STC04IE170HP STC04IE170HP.pdf
STC04IE170HP
Hersteller: STMicroelectronics
Description: TRANS ESBT 1700V 4A TO247-4LHP
Supplier Device Package: TO-247-4L
Applications: Gate Driver
Transistor Type: NPN - Emitter Switched Bipolar
Mounting Type: Through Hole
Current Rating (Amps): 4A
Package / Case: TO-247-4
Voltage - Rated: 1700V (1.7kV)
Packaging: Tube
Produkt ist nicht verfügbar
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STF11NM60N STx11NM60N.pdf
STF11NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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STGP30NC60W STGB%2CSTGP%2CSTGW30NC60W.pdf
STGP30NC60W
Hersteller: STMicroelectronics
Description: IGBT 600V 60A TO-220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 390V, 20A, 10Ohm, 15V
Switching Energy: 305µJ (on), 181µJ (off)
Td (on/off) @ 25°C: 29.5ns/118ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP11NM60N STx11NM60N.pdf
STP11NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Produkt ist nicht verfügbar
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STP16CP05B1R en.CD00126634.pdf
STP16CP05B1R
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24DIP
Part Status: Obsolete
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STP16CPS05B1R en.CD00126635.pdf
STP16CPS05B1R
Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 100MA 24DIP
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-DIP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Frequency: 30MHz
Number of Outputs: 16
Mounting Type: Through Hole
Voltage - Output: 20V
Package / Case: 24-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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STP65NF06 en.CD00126774.pdf
STP65NF06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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STPS10150CFP en.CD00002409.pdf
STPS10150CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 1403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
50+0.56 EUR
100+0.54 EUR
500+0.51 EUR
1000+0.48 EUR
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STPS10H100CFP STPS10H100CT%2CCG%2CCR%2CCFP.pdf
STPS10H100CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
auf Bestellung 2997 Stücke:
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Anzahl Preis
12+1.55 EUR
50+0.43 EUR
100+0.42 EUR
Mindestbestellmenge: 12
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STPS20S100CFP en.CD00051668.pdf
STPS20S100CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 100V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
50+1.01 EUR
100+0.9 EUR
500+0.7 EUR
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STTH12012TV1 description en.CD00096475.pdf
STTH12012TV1
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.19 EUR
10+26.22 EUR
100+21.58 EUR
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STTH12012TV2 description en.CD00096475.pdf
STTH12012TV2
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STTH1210FP en.CD00096485.pdf
STTH1210FP
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 12A TO220FPAC
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Produkt ist nicht verfügbar
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STTH212 en.CD00060993.pdf
STTH212
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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STTH212RL en.CD00060993.pdf
STTH212RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1200V 2A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTH3002W en.CD00110364.pdf
STTH3002W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 30A DO247
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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STTH3010PI en.CD00096486.pdf
STTH3010PI
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
30+3.63 EUR
120+3.46 EUR
510+3.17 EUR
Mindestbestellmenge: 4
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STTH6006TV1 description en.CD00110834.pdf
STTH6006TV1
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.85 EUR
10+25.01 EUR
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STTH6110TV2 description en.CD00096489.pdf
STTH6110TV2
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1000V 30A ISOTOP
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.01 EUR
10+26.66 EUR
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STTH6112TV1 description en.CD00096473.pdf
STTH6112TV1
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STTH6112TV2 description en.CD00096473.pdf
STTH6112TV2
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STTH806DIRG en.CD00110836.pdf
STTH806DIRG
Hersteller: STMicroelectronics
Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
50+0.97 EUR
100+0.96 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
STTH810FP en.CD00096480.pdf
STTH810FP
Hersteller: STMicroelectronics
Description: DIODE STD 1000V 8A TO220FPAC
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
auf Bestellung 1676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
50+0.56 EUR
100+0.52 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
STTH812FP en.CD00096467.pdf
STTH812FP
Hersteller: STMicroelectronics
Description: DIODE STD 1200V 8A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
auf Bestellung 2127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
50+1.2 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.76 EUR
2000+0.7 EUR
Mindestbestellmenge: 7
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STTH9012TV1 description en.CD00096474.pdf
STTH9012TV1
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 45A ISOTOP
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.04 EUR
10+34.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STTH9012TV2 description en.CD00096474.pdf
STTH9012TV2
Hersteller: STMicroelectronics
Description: DIODE MODULE GP 1200V 45A ISOTOP
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 45 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 45A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 125 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.54 EUR
10+35.53 EUR
100+30.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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