Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (127218) > Seite 2121 nach 2121
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||
|---|---|---|---|---|---|---|---|
| SCT040W120G3AG | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 179A; 312W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 179A Power dissipation: 312W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 54mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
 |
TPDV840RG | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 40A; TOP3; Igt: 200mA; alternistor,high voltage Type of thyristor: triac Mounting: THT Gate current: 200mA Max. load current: 40A Max. off-state voltage: 0.8kV Features of semiconductor devices: alternistor; high voltage Case: TOP3 Kind of package: tube |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SCT040W120G3AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 179A; 312W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 179A
Power dissipation: 312W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 179A; 312W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 179A
Power dissipation: 312W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPDV840RG |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 40A; TOP3; Igt: 200mA; alternistor,high voltage
Type of thyristor: triac
Mounting: THT
Gate current: 200mA
Max. load current: 40A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: alternistor; high voltage
Case: TOP3
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 40A; TOP3; Igt: 200mA; alternistor,high voltage
Type of thyristor: triac
Mounting: THT
Gate current: 200mA
Max. load current: 40A
Max. off-state voltage: 0.8kV
Features of semiconductor devices: alternistor; high voltage
Case: TOP3
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |