Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (129469) > Seite 248 nach 2158
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EVLVIP15L-5WSB | STMicroelectronics |
Description: EVAL BOARD FOR VIPER 15 |
Produkt ist nicht verfügbar |
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EVLVIP27L-12WS | STMicroelectronics |
Description: EVAL BOARD FOR VIPER27LXPackaging: Bulk Voltage - Output: 5V Voltage - Input: 85 ~ 265 VAC Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: VIPer27 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Part Status: Obsolete Power - Output: 12 W |
Produkt ist nicht verfügbar |
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| EVL6563-ZRC200W | STMicroelectronics |
Description: EVAL BOARD FOR L6563Packaging: Bulk Function: Power Factor Correction Type: Power Management Contents: Board(s) Utilized IC / Part: L6563 Supplied Contents: Board(s) Embedded: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STP16DPPS05MTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 40MA 24SOPPackaging: Cut Tape (CT) Package / Case: 24-SOIC (0.295", 7.50mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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STG3220QTR | STMicroelectronics |
Description: IC SWITCH SPDT X 2 5.4OHM 10QFNPackaging: Cut Tape (CT) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 5.4Ohm -3db Bandwidth: 800MHz Supplier Device Package: 10-QFN (1.8x1.4) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Charge Injection: 6.4pC Crosstalk: -78dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 15ns, 13ns Channel Capacitance (CS(off), CD(off)): 2pF Current - Leakage (IS(off)) (Max): 20nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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ST2349AQTR | STMicroelectronics |
Description: IC TRNSLTR BIDIRECTIONAL 16QFN |
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STP16DPPS05PTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 40MA 24QSOPPackaging: Tape & Reel (TR) Package / Case: 24-SSOP (0.154", 3.90mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-QSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
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STMUX1800LQTR | STMicroelectronics |
Description: IC MUX/DEMUX 16X8 56QFNFeatures: 10/100/1000, Bi-Directional, LAN Packaging: Tape & Reel (TR) Package / Case: 56-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio, Telecommunications, Video On-State Resistance (Max): 6.5Ohm -3db Bandwidth: 600MHz Supplier Device Package: 56-QFN (11x5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 11 |
Produkt ist nicht verfügbar |
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STP16DPPS05MTR | STMicroelectronics |
Description: IC LED DRIVER LINEAR 40MA 24SOPPackaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-SOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STG3220QTR | STMicroelectronics |
Description: IC SWITCH SPDT X 2 5.4OHM 10QFNCurrent - Leakage (IS(off)) (Max): 20nA Channel Capacitance (CS(off), CD(off)): 2pF Switch Time (Ton, Toff) (Max): 15ns, 13ns Channel-to-Channel Matching (ΔRon): 100mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -78dB @ 1MHz Charge Injection: 6.4pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: 10-QFN (1.8x1.4) -3db Bandwidth: 800MHz On-State Resistance (Max): 5.4Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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STHDLS101AQTR | STMicroelectronics |
Description: IC VIDEO LEVEL SHIFTER 48QFNControl Interface: Serial Supplier Device Package: 48-QFN (7x7) Standards: HDMI 1.3 Applications: Consumer Video Voltage - Supply: 3.3V Function: Level Shifter Mounting Type: Surface Mount Package / Case: 48-QFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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ST2349AQTR | STMicroelectronics |
Description: IC TRNSLTR BIDIRECTIONAL 16QFN |
Produkt ist nicht verfügbar |
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| STEVAL-ILL024V1 | STMicroelectronics |
Description: EVAL BOARD FOR STM32F103VBPackaging: Bulk Voltage - Output: 20V Voltage - Input: 3V ~ 5.5V Current - Output / Channel: 100mA Utilized IC / Part: STM32F103VB, STP16DP05 Supplied Contents: Board(s) Outputs and Type: 16 Non-Isolated Outputs Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
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STD888T4 | STMicroelectronics |
Description: TRANS PNP 30V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 15 W |
auf Bestellung 2735 Stücke: Lieferzeit 10-14 Tag (e) |
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STD888T4 | STMicroelectronics |
Description: TRANS PNP 30V 5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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STP150N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V |
Produkt ist nicht verfügbar |
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STC08DE150HV | STMicroelectronics |
Description: TRANS ESBT 1500V 8A TO247-4LHVPackaging: Tube Voltage - Rated: 1500V (1.5kV) Package / Case: TO-247-4 Current Rating (Amps): 8A Mounting Type: Through Hole Transistor Type: NPN - Emitter Switched Bipolar Applications: Gate Driver Supplier Device Package: TO-247-4L HV |
Produkt ist nicht verfügbar |
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STGW40N120KD | STMicroelectronics |
Description: IGBT 1200V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 48ns/338ns Switching Energy: 3.7mJ (on), 5.7mJ (off) Test Condition: 960V, 30A, 10Ohm, 15V Gate Charge: 126 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 240 W |
Produkt ist nicht verfügbar |
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STP7N52K3 | STMicroelectronics |
Description: MOSFET N-CH 525V 6A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP27N3LH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 27A TO220 |
Produkt ist nicht verfügbar |
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STGP10NC60S | STMicroelectronics |
Description: IGBT 600V 21A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 60µJ (on), 340µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 18 nC Part Status: Obsolete Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 62.5 W |
Produkt ist nicht verfügbar |
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STFW3N150 | STMicroelectronics |
Description: MOSFET N-CH 1500V 2.5A ISOWATTPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V |
auf Bestellung 1743 Stücke: Lieferzeit 10-14 Tag (e) |
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STP200N6F3 | STMicroelectronics |
Description: MOSFET N-CH 60V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
Produkt ist nicht verfügbar |
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STGF10NC60SD | STMicroelectronics |
Description: IGBT 600V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Supplier Device Package: TO-220FP Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 60µJ (on), 340µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 18 nC Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 25 W |
Produkt ist nicht verfügbar |
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STGW38IH130D | STMicroelectronics |
Description: IGBT 1300V 63A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-247 Long Leads Td (on/off) @ 25°C: -/284ns Switching Energy: 3.4mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 127 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 1300 V Current - Collector Pulsed (Icm): 125 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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STP10N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 8.4A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V |
Produkt ist nicht verfügbar |
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STP10NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 2388 Stücke: Lieferzeit 10-14 Tag (e) |
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STFW4N150 | STMicroelectronics |
Description: MOSFET N-CH 1500V 4A ISOWATTPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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STP95N2LH5 | STMicroelectronics |
Description: MOSFET N-CH 25V 80A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V |
Produkt ist nicht verfügbar |
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STS30N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 30A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V |
Produkt ist nicht verfügbar |
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T1610-800G-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 16A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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T1610-800G-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 16A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
auf Bestellung 2726 Stücke: Lieferzeit 10-14 Tag (e) |
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STK22N6F3 | STMicroelectronics |
Description: MOSFET N-CH 60V 22A POLARPAKPackaging: Tape & Reel (TR) Package / Case: PolarPak® Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V Power Dissipation (Max): 5.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PolarPak® Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |
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STD10NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 3090 Stücke: Lieferzeit 10-14 Tag (e) |
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STD27N3LH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 27A DPAK |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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STB7N52K3 | STMicroelectronics |
Description: MOSFET N-CH 525V 6A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
Produkt ist nicht verfügbar |
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STB12NM50ND | STMicroelectronics |
Description: MOSFET N-CH 500V 11A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STB200N6F3 | STMicroelectronics |
Description: MOSFET N-CH 60V 120A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STB95N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2STN2550 | STMicroelectronics |
Description: TRANS PNP 50V 5A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-223 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STD27N3LH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 27A DPAK |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2STF2550 | STMicroelectronics |
Description: TRANS PNP 50V 5A SOT-89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.4 W |
auf Bestellung 4144 Stücke: Lieferzeit 10-14 Tag (e) |
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STD12NM50ND | STMicroelectronics |
Description: MOSFET N-CH 500V 11A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STD10NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STB50N25M5 | STMicroelectronics |
Description: MOSFET N-CH 250V 28A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STB7N52K3 | STMicroelectronics |
Description: MOSFET N-CH 525V 6A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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STB200N6F3 | STMicroelectronics |
Description: MOSFET N-CH 60V 120A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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2STF2550 | STMicroelectronics |
Description: TRANS PNP 50V 5A SOT-89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.4 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD27N3LH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 27A DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STICE-SYS001 | STMicroelectronics |
Description: EMULATOR FOR STM8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STM8/128-EV/TS | STMicroelectronics |
Description: EVAL KIT TOUCH SENSING STM8S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STM3210E-SK/HIT | STMicroelectronics |
Description: HITEX STM32F107 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32F107 Platform: Hitex Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STM8/128-MCKIT | STMicroelectronics |
Description: EVAL KIT MOTOR CONTROL STM8SPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: STM8S2xx Supplied Contents: Board(s), Cable(s), Power Supply, Accessories Primary Attributes: Motors (ACIM, BLDC) Embedded: Yes, MCU, 8-Bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STD878T4 | STMicroelectronics |
Description: TRANS NPN 30V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74LX1G86CTR | STMicroelectronics |
Description: IC GATE XOR 1CH 2-INP SOT323-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VND14NV04 | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm (Max) Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: TO-252 (DPAK) Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STM8L101-EVAL | STMicroelectronics |
Description: STM8L101 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s), LCD Core Processor: STM8 Utilized IC / Part: STM8L101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STEVAL-IAS003V1 | STMicroelectronics |
Description: EVAL BOARD FOR STM8L101Packaging: Box Function: LCD Controller Type: Display Contents: Board(s) Utilized IC / Part: STM8L101 Supplied Contents: Board(s) Embedded: Yes, MCU, 8-Bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STM8S-DISCOVERY | STMicroelectronics |
Description: DISCOVERY STM8S105 EVAL BRDPackaging: Bulk Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s) Core Processor: STM8 Board Type: Evaluation Platform Utilized IC / Part: STM8S105 Platform: Discovery Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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STS10DN3LH5 | STMicroelectronics |
Description: MOSFET 2N-CH 30V 10A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| EVLVIP15L-5WSB |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VIPER 15
Description: EVAL BOARD FOR VIPER 15
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVLVIP27L-12WS |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VIPER27LX
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 85 ~ 265 VAC
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: VIPer27
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Part Status: Obsolete
Power - Output: 12 W
Description: EVAL BOARD FOR VIPER27LX
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 85 ~ 265 VAC
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: VIPer27
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Part Status: Obsolete
Power - Output: 12 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVL6563-ZRC200W |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR L6563
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: L6563
Supplied Contents: Board(s)
Embedded: No
Part Status: Obsolete
Description: EVAL BOARD FOR L6563
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: L6563
Supplied Contents: Board(s)
Embedded: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP16DPPS05MTR |
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Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 40MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 40MA 24SOP
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 10+ | 2.63 EUR |
| 25+ | 2.4 EUR |
| 100+ | 2.14 EUR |
| 250+ | 2.02 EUR |
| 500+ | 1.97 EUR |
| STG3220QTR |
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Hersteller: STMicroelectronics
Description: IC SWITCH SPDT X 2 5.4OHM 10QFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-QFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6.4pC
Crosstalk: -78dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 15ns, 13ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 5.4OHM 10QFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 5.4Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-QFN (1.8x1.4)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 6.4pC
Crosstalk: -78dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 15ns, 13ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ST2349AQTR |
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Hersteller: STMicroelectronics
Description: IC TRNSLTR BIDIRECTIONAL 16QFN
Description: IC TRNSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP16DPPS05PTR |
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Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 40MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER LINEAR 40MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STMUX1800LQTR |
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Hersteller: STMicroelectronics
Description: IC MUX/DEMUX 16X8 56QFN
Features: 10/100/1000, Bi-Directional, LAN
Packaging: Tape & Reel (TR)
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, Telecommunications, Video
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 600MHz
Supplier Device Package: 56-QFN (11x5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 11
Description: IC MUX/DEMUX 16X8 56QFN
Features: 10/100/1000, Bi-Directional, LAN
Packaging: Tape & Reel (TR)
Package / Case: 56-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio, Telecommunications, Video
On-State Resistance (Max): 6.5Ohm
-3db Bandwidth: 600MHz
Supplier Device Package: 56-QFN (11x5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 11
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP16DPPS05MTR |
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Hersteller: STMicroelectronics
Description: IC LED DRIVER LINEAR 40MA 24SOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 40MA 24SOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.89 EUR |
| 2000+ | 1.84 EUR |
| 3000+ | 1.82 EUR |
| STG3220QTR |
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Hersteller: STMicroelectronics
Description: IC SWITCH SPDT X 2 5.4OHM 10QFN
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 15ns, 13ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -78dB @ 1MHz
Charge Injection: 6.4pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 5.4Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Description: IC SWITCH SPDT X 2 5.4OHM 10QFN
Current - Leakage (IS(off)) (Max): 20nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 15ns, 13ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -78dB @ 1MHz
Charge Injection: 6.4pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 5.4Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
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| STHDLS101AQTR |
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Hersteller: STMicroelectronics
Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)
Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)
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| ST2349AQTR |
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Hersteller: STMicroelectronics
Description: IC TRNSLTR BIDIRECTIONAL 16QFN
Description: IC TRNSLTR BIDIRECTIONAL 16QFN
Produkt ist nicht verfügbar
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| STEVAL-ILL024V1 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STM32F103VB
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 3V ~ 5.5V
Current - Output / Channel: 100mA
Utilized IC / Part: STM32F103VB, STP16DP05
Supplied Contents: Board(s)
Outputs and Type: 16 Non-Isolated Outputs
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR STM32F103VB
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 3V ~ 5.5V
Current - Output / Channel: 100mA
Utilized IC / Part: STM32F103VB, STP16DP05
Supplied Contents: Board(s)
Outputs and Type: 16 Non-Isolated Outputs
Part Status: Obsolete
Contents: Board(s)
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| STD888T4 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Description: TRANS PNP 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| STD888T4 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 30V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Description: TRANS PNP 30V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 10A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
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| STP150N3LLH6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
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| STC08DE150HV |
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Hersteller: STMicroelectronics
Description: TRANS ESBT 1500V 8A TO247-4LHV
Packaging: Tube
Voltage - Rated: 1500V (1.5kV)
Package / Case: TO-247-4
Current Rating (Amps): 8A
Mounting Type: Through Hole
Transistor Type: NPN - Emitter Switched Bipolar
Applications: Gate Driver
Supplier Device Package: TO-247-4L HV
Description: TRANS ESBT 1500V 8A TO247-4LHV
Packaging: Tube
Voltage - Rated: 1500V (1.5kV)
Package / Case: TO-247-4
Current Rating (Amps): 8A
Mounting Type: Through Hole
Transistor Type: NPN - Emitter Switched Bipolar
Applications: Gate Driver
Supplier Device Package: TO-247-4L HV
Produkt ist nicht verfügbar
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| STGW40N120KD |
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Hersteller: STMicroelectronics
Description: IGBT 1200V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 48ns/338ns
Switching Energy: 3.7mJ (on), 5.7mJ (off)
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 240 W
Description: IGBT 1200V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 48ns/338ns
Switching Energy: 3.7mJ (on), 5.7mJ (off)
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 240 W
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| STP7N52K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
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| STP27N3LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A TO220
Description: MOSFET N-CH 30V 27A TO220
Produkt ist nicht verfügbar
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| STGP10NC60S |
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Hersteller: STMicroelectronics
Description: IGBT 600V 21A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 62.5 W
Description: IGBT 600V 21A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 62.5 W
Produkt ist nicht verfügbar
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| STFW3N150 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
Description: MOSFET N-CH 1500V 2.5A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
auf Bestellung 1743 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.16 EUR |
| 30+ | 3.97 EUR |
| 120+ | 3.26 EUR |
| 510+ | 2.75 EUR |
| 1020+ | 2.56 EUR |
| STP200N6F3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGF10NC60SD |
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Hersteller: STMicroelectronics
Description: IGBT 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 25 W
Description: IGBT 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 25 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STGW38IH130D |
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Hersteller: STMicroelectronics
Description: IGBT 1300V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
Description: IGBT 1300V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STP10N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 8.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Description: MOSFET N-CH 620V 8.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP10NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2388 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.14 EUR |
| 50+ | 3.11 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.3 EUR |
| 1000+ | 2.14 EUR |
| 2000+ | 2 EUR |
| STFW4N150 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 4A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 1500V 4A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.81 EUR |
| STP95N2LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 25V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V
Description: MOSFET N-CH 25V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STS30N3LLH6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| T1610-800G-TR |
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Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.97 EUR |
| 2000+ | 0.9 EUR |
| T1610-800G-TR |
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Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 2726 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
| STK22N6F3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD10NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.09 EUR |
| 10+ | 3.99 EUR |
| 100+ | 2.79 EUR |
| 500+ | 2.31 EUR |
| STD27N3LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STB7N52K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STB12NM50ND |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STB200N6F3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB95N3LLH6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2STN2550 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD27N3LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 2STF2550 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
auf Bestellung 4144 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| STD12NM50ND |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD10NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.94 EUR |
| STB50N25M5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB7N52K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.72 EUR |
| STB200N6F3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.7 EUR |
| 10+ | 8.71 EUR |
| 100+ | 7.14 EUR |
| 2STF2550 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.27 EUR |
| STD27N3LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STICE-SYS001 |
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Hersteller: STMicroelectronics
Description: EMULATOR FOR STM8
Description: EMULATOR FOR STM8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM8/128-EV/TS |
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Hersteller: STMicroelectronics
Description: EVAL KIT TOUCH SENSING STM8S
Description: EVAL KIT TOUCH SENSING STM8S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM3210E-SK/HIT |
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Hersteller: STMicroelectronics
Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM8/128-MCKIT |
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Hersteller: STMicroelectronics
Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD878T4 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LX1G86CTR |
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Hersteller: STMicroelectronics
Description: IC GATE XOR 1CH 2-INP SOT323-5
Description: IC GATE XOR 1CH 2-INP SOT323-5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VND14NV04 |
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Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM8L101-EVAL |
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Hersteller: STMicroelectronics
Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-IAS003V1 |
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Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
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| STM8S-DISCOVERY |
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Hersteller: STMicroelectronics
Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STS10DN3LH5 |
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Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.79 EUR |





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