Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170248) > Seite 2810 nach 2838
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STM32H735G-DK | STMicroelectronics |
![]() Description: Dev.kit: STM32; prototype board Type of development kit: STM32 Kit contents: prototype board Components: LCD display; STM32H735IGK6U Kind of connector: microSD; Pmod socket; RJ45; SMA; STMod+ socket; USB B micro; USB micro AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
P-L496G-CELL02 | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board,expansion board; LTE CAT 1; IoT Type of development kit: STM32 Kit contents: base board; expansion board Interface: Audio; camera port; GPIO; I2C; SPI; UART; USB Kind of connector: pin strips; Pmod socket x2; USB micro Number of add-on connectors: 4 Communictions protocol: LTE CAT 1 Application: IoT Kind of architecture: Cortex M4 Components: Quectel BG96; STM32L496AGI6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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B-U585I-IOT02A | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board; Comp: STM32U585AII6Q Type of development kit: STM32 Kit contents: base board Components: STM32U585AII6Q Programmers and development kits features: accelerometer; gyroscope; humidity/temperature sensor; light sensor; magnetometer; motion detector; pressure sensor Kind of connector: pin strips; Pmod socket; STMod+ socket; STMod+ socket x2; USB C socket Kind of architecture: Cortex M33 Communictions protocol: Bluetooth Low Energy; IEEE 802.11b/g/n Memory: 32kB EEPROM; 8MB SRAM; 64MB FLASH |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F100RCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 24MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3 Kind of architecture: Cortex M3 Memory: 24kB SRAM; 256kB FLASH Number of 16bit timers: 11 Family: STM32F1 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: in-tray Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STM32F100RCT6BTR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 24MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x2; SPI x3; UART x2; USART x3 Kind of architecture: Cortex M3 Memory: 24kB SRAM; 256kB FLASH Family: STM32F1 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SM6T18A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape Case: SMB Tolerance: ±5% Max. off-state voltage: 15.3V Semiconductor structure: unidirectional Max. forward impulse current: 24A Breakdown voltage: 18V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Mounting: SMD |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T33A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 5237 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T33CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 6207 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T39A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 5984 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T10A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 41A Breakdown voltage: 10V Leakage current: 50µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Case: SMB Tolerance: ±5% Max. off-state voltage: 8.55V |
auf Bestellung 18109 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T10CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 10V; 41A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 9490 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T33CAY | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 23455 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36CAY | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape Mounting: SMD Case: SMB Breakdown voltage: 36V Leakage current: 1µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Semiconductor structure: bidirectional Max. forward impulse current: 12A |
auf Bestellung 3934 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T36CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape Mounting: SMD Case: SMB Breakdown voltage: 36V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Tolerance: ±5% Max. off-state voltage: 30.8V Semiconductor structure: bidirectional Max. forward impulse current: 12A |
auf Bestellung 1666 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T7V5CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.4V Breakdown voltage: 7.5V Max. forward impulse current: 53A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape |
auf Bestellung 2725 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T200A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 659 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T24CA | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2483 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T150A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2459 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T24A | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1185 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-33 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.6V Max. forward impulse current: 85A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: reel; tape |
auf Bestellung 1123 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15NK90Z | STMicroelectronics |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 350W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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STM6821LWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 4.63V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM6821MWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 4.39V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM6821RWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 2.63V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
MJB44H11T4-A | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BZW50-68B | STMicroelectronics |
![]() Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 68V Semiconductor structure: bidirectional Max. forward impulse current: 41A Breakdown voltage: 75.6V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-180 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack Max. off-state voltage: 180V Max. forward impulse current: 16A Case: R6 Semiconductor structure: unidirectional Breakdown voltage: 200V Leakage current: 5µA Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Mounting: THT |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-56B | STMicroelectronics |
![]() Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 56V Semiconductor structure: bidirectional Max. forward impulse current: 50A Breakdown voltage: 99.6V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-39B | STMicroelectronics |
![]() Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 39V Semiconductor structure: bidirectional Max. forward impulse current: 72A Breakdown voltage: 43.3V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-39 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 39V Semiconductor structure: unidirectional Max. forward impulse current: 72A Breakdown voltage: 43.3V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-33BRL | STMicroelectronics |
![]() Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.6V Max. forward impulse current: 85A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: reel; tape |
auf Bestellung 827 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-82B | STMicroelectronics |
![]() Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 82V Semiconductor structure: bidirectional Max. forward impulse current: 34A Breakdown voltage: 91V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-47B | STMicroelectronics |
![]() Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 47V Semiconductor structure: bidirectional Max. forward impulse current: 60.1A Breakdown voltage: 52V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-100B | STMicroelectronics |
![]() Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 100V Semiconductor structure: bidirectional Max. forward impulse current: 28A Breakdown voltage: 111V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-68 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 68V Semiconductor structure: unidirectional Max. forward impulse current: 41A Breakdown voltage: 75.6V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-56 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 56V Semiconductor structure: unidirectional Max. forward impulse current: 50A Breakdown voltage: 62.2V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW50-120B | STMicroelectronics |
![]() Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 120V Semiconductor structure: bidirectional Max. forward impulse current: 23A Breakdown voltage: 133V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-18 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape Max. off-state voltage: 18V Max. forward impulse current: 155A Case: R6 Semiconductor structure: unidirectional Breakdown voltage: 20V Leakage current: 5µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-22 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape Case: R6 Max. off-state voltage: 22V Semiconductor structure: unidirectional Max. forward impulse current: 127A Breakdown voltage: 24.4V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-22B | STMicroelectronics |
![]() Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape Case: R6 Max. off-state voltage: 22V Semiconductor structure: bidirectional Max. forward impulse current: 127A Breakdown voltage: 24.4V Leakage current: 5µA Mounting: THT Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-12B | STMicroelectronics |
![]() Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack Case: R6 Max. off-state voltage: 12V Semiconductor structure: bidirectional Max. forward impulse current: 227A Breakdown voltage: 13.3V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZW50-82 | STMicroelectronics |
![]() Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack Case: R6 Max. off-state voltage: 82V Semiconductor structure: unidirectional Max. forward impulse current: 34A Breakdown voltage: 91V Leakage current: 5µA Mounting: THT Kind of package: Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STM32H755IIT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: LQFP176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755BIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 480MHz Mounting: SMD Number of inputs/outputs: 148 Case: LQFP208 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Number of comparators: 2 Family: STM32H7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755BIT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 148 Case: LQFP208 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755IIK3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755IIK6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755IIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: LQFP176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755XIH3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755XIH6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32H755ZIT3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 97 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Clock frequency: 480MHz Number of comparators: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SMCJ5.0CA-TR | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.74V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
BTB08-600CRG | STMicroelectronics |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 25mA Mounting: THT Kind of package: tube Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STB7NK80ZT4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.3A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 557 Stücke: Lieferzeit 14-21 Tag (e) |
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M95M01-RMN6TP | STMicroelectronics |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: SPI Memory organisation: 128kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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VND5050AJTR-E | STMicroelectronics |
![]() Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 18A Mounting: SMD Number of channels: 2 Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STH30N65DM6-7AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Mounting: SMD Case: H2PAK7 Drain-source voltage: 650V Drain current: 18A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 223W Polarisation: unipolar Gate charge: 46nC Technology: MDmesh™ DM6 Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 112A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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STGW35HF60WD | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 35A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
STM32F103T6U7A | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USART x2; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 10kB SRAM; 32kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 10 Number of 16bit timers: 3 Family: STM32F1 Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
STM32F103TBU6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: CAN; I2C; SPI; USART x2; USB Kind of architecture: Cortex M3 Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 20kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 4 Family: STM32F1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
STM32H735G-DK |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; prototype board
Type of development kit: STM32
Kit contents: prototype board
Components: LCD display; STM32H735IGK6U
Kind of connector: microSD; Pmod socket; RJ45; SMA; STMod+ socket; USB B micro; USB micro AB
Category: STM development kits
Description: Dev.kit: STM32; prototype board
Type of development kit: STM32
Kit contents: prototype board
Components: LCD display; STM32H735IGK6U
Kind of connector: microSD; Pmod socket; RJ45; SMA; STMod+ socket; USB B micro; USB micro AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P-L496G-CELL02 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,expansion board; LTE CAT 1; IoT
Type of development kit: STM32
Kit contents: base board; expansion board
Interface: Audio; camera port; GPIO; I2C; SPI; UART; USB
Kind of connector: pin strips; Pmod socket x2; USB micro
Number of add-on connectors: 4
Communictions protocol: LTE CAT 1
Application: IoT
Kind of architecture: Cortex M4
Components: Quectel BG96; STM32L496AGI6
Category: STM development kits
Description: Dev.kit: STM32; base board,expansion board; LTE CAT 1; IoT
Type of development kit: STM32
Kit contents: base board; expansion board
Interface: Audio; camera port; GPIO; I2C; SPI; UART; USB
Kind of connector: pin strips; Pmod socket x2; USB micro
Number of add-on connectors: 4
Communictions protocol: LTE CAT 1
Application: IoT
Kind of architecture: Cortex M4
Components: Quectel BG96; STM32L496AGI6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B-U585I-IOT02A |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32U585AII6Q
Type of development kit: STM32
Kit contents: base board
Components: STM32U585AII6Q
Programmers and development kits features: accelerometer; gyroscope; humidity/temperature sensor; light sensor; magnetometer; motion detector; pressure sensor
Kind of connector: pin strips; Pmod socket; STMod+ socket; STMod+ socket x2; USB C socket
Kind of architecture: Cortex M33
Communictions protocol: Bluetooth Low Energy; IEEE 802.11b/g/n
Memory: 32kB EEPROM; 8MB SRAM; 64MB FLASH
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32U585AII6Q
Type of development kit: STM32
Kit contents: base board
Components: STM32U585AII6Q
Programmers and development kits features: accelerometer; gyroscope; humidity/temperature sensor; light sensor; magnetometer; motion detector; pressure sensor
Kind of connector: pin strips; Pmod socket; STMod+ socket; STMod+ socket x2; USB C socket
Kind of architecture: Cortex M33
Communictions protocol: Bluetooth Low Energy; IEEE 802.11b/g/n
Memory: 32kB EEPROM; 8MB SRAM; 64MB FLASH
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 100.93 EUR |
3+ | 98.31 EUR |
STM32F100RCT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Kind of architecture: Cortex M3
Memory: 24kB SRAM; 256kB FLASH
Number of 16bit timers: 11
Family: STM32F1
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Kind of architecture: Cortex M3
Memory: 24kB SRAM; 256kB FLASH
Number of 16bit timers: 11
Family: STM32F1
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32F100RCT6BTR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x3; UART x2; USART x3
Kind of architecture: Cortex M3
Memory: 24kB SRAM; 256kB FLASH
Family: STM32F1
Operating temperature: -40...85°C
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 24MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x3; UART x2; USART x3
Kind of architecture: Cortex M3
Memory: 24kB SRAM; 256kB FLASH
Family: STM32F1
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SM6T18A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 15.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 24A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 15.3V
Semiconductor structure: unidirectional
Max. forward impulse current: 24A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
194+ | 0.37 EUR |
210+ | 0.34 EUR |
278+ | 0.26 EUR |
451+ | 0.16 EUR |
SM6T33A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 5237 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
126+ | 0.57 EUR |
139+ | 0.52 EUR |
176+ | 0.41 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
SM6T33CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 6207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
194+ | 0.37 EUR |
226+ | 0.32 EUR |
285+ | 0.25 EUR |
685+ | 0.10 EUR |
725+ | 0.10 EUR |
SM6T39A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 5984 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
142+ | 0.51 EUR |
158+ | 0.45 EUR |
210+ | 0.34 EUR |
676+ | 0.11 EUR |
715+ | 0.10 EUR |
SM6T10A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 10V
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 8.55V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 10V
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 8.55V
auf Bestellung 18109 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
123+ | 0.58 EUR |
139+ | 0.52 EUR |
170+ | 0.42 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
SM6T10CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 9490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
217+ | 0.33 EUR |
244+ | 0.29 EUR |
610+ | 0.12 EUR |
642+ | 0.11 EUR |
SM6T33CAY |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 23455 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
139+ | 0.52 EUR |
184+ | 0.39 EUR |
404+ | 0.18 EUR |
424+ | 0.17 EUR |
10000+ | 0.16 EUR |
SM6T36CAY |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Mounting: SMD
Case: SMB
Breakdown voltage: 36V
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Mounting: SMD
Case: SMB
Breakdown voltage: 36V
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
auf Bestellung 3934 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
110+ | 0.65 EUR |
132+ | 0.54 EUR |
165+ | 0.43 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
SM6T36CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. off-state voltage: 30.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. off-state voltage: 30.8V
Semiconductor structure: bidirectional
Max. forward impulse current: 12A
auf Bestellung 1666 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
126+ | 0.57 EUR |
162+ | 0.44 EUR |
181+ | 0.40 EUR |
575+ | 0.12 EUR |
SM6T7V5CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.5V; 53A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
143+ | 0.50 EUR |
168+ | 0.43 EUR |
206+ | 0.35 EUR |
618+ | 0.12 EUR |
658+ | 0.11 EUR |
SM6T200A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
145+ | 0.49 EUR |
169+ | 0.42 EUR |
212+ | 0.34 EUR |
424+ | 0.17 EUR |
451+ | 0.16 EUR |
SM6T24CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2483 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
241+ | 0.30 EUR |
295+ | 0.24 EUR |
325+ | 0.22 EUR |
610+ | 0.12 EUR |
650+ | 0.11 EUR |
SM6T150A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2459 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.80 EUR |
125+ | 0.57 EUR |
158+ | 0.45 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
SM6T24A |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1185 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
197+ | 0.36 EUR |
230+ | 0.31 EUR |
291+ | 0.25 EUR |
658+ | 0.11 EUR |
695+ | 0.10 EUR |
BZW50-33 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 36.6V; 85A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.22 EUR |
40+ | 1.83 EUR |
42+ | 1.73 EUR |
1000+ | 1.66 EUR |
STW15NK90Z | ![]() |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 350W; TO247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.31 EUR |
17+ | 4.22 EUR |
18+ | 3.98 EUR |
STM6821LWY6F |
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Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM6821MWY6F |
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Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 4.39V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM6821RWY6F |
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Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJB44H11T4-A |
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Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZW50-68B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.6V; 41A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: bidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
22+ | 3.29 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
BZW50-180 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 200V; 16A; unidirectional; R6; Ammo Pack
Max. off-state voltage: 180V
Max. forward impulse current: 16A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 200V
Leakage current: 5µA
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.33 EUR |
24+ | 3.02 EUR |
35+ | 2.06 EUR |
37+ | 1.96 EUR |
BZW50-56B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 99.6V; 50A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: bidirectional
Max. forward impulse current: 50A
Breakdown voltage: 99.6V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.06 EUR |
20+ | 3.68 EUR |
30+ | 2.42 EUR |
32+ | 2.29 EUR |
BZW50-39B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 43.3V; 72A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: bidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
21+ | 3.49 EUR |
32+ | 2.30 EUR |
33+ | 2.17 EUR |
BZW50-39 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 43.3V; 72A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Max. forward impulse current: 72A
Breakdown voltage: 43.3V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.97 EUR |
27+ | 2.69 EUR |
40+ | 1.79 EUR |
43+ | 1.69 EUR |
BZW50-33BRL |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36.6V; 85A; bidirectional; R6; 5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.6V
Max. forward impulse current: 85A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
26+ | 2.80 EUR |
33+ | 2.17 EUR |
35+ | 2.06 EUR |
BZW50-82B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 91V; 34A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: bidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.73 EUR |
22+ | 3.39 EUR |
33+ | 2.22 EUR |
35+ | 2.10 EUR |
BZW50-47B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 52V; 60.1A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 47V
Semiconductor structure: bidirectional
Max. forward impulse current: 60.1A
Breakdown voltage: 52V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
21+ | 3.49 EUR |
32+ | 2.30 EUR |
33+ | 2.17 EUR |
BZW50-100B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 111V; 28A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 100V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 111V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.79 EUR |
21+ | 3.43 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
BZW50-68 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 75.6V; 41A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 68V
Semiconductor structure: unidirectional
Max. forward impulse current: 41A
Breakdown voltage: 75.6V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZW50-56 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 62.2V; 50A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Max. forward impulse current: 50A
Breakdown voltage: 62.2V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.90 EUR |
28+ | 2.56 EUR |
BZW50-120B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 133V; 23A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 120V
Semiconductor structure: bidirectional
Max. forward impulse current: 23A
Breakdown voltage: 133V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
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BZW50-18 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 20V; 155A; unidirectional; R6; reel,tape
Max. off-state voltage: 18V
Max. forward impulse current: 155A
Case: R6
Semiconductor structure: unidirectional
Breakdown voltage: 20V
Leakage current: 5µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Mounting: THT
Produkt ist nicht verfügbar
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BZW50-22 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 24.4V; 127A; unidirectional; R6; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: unidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
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BZW50-22B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24.4V; 127A; bidirectional; R6; 5kW; reel,tape
Case: R6
Max. off-state voltage: 22V
Semiconductor structure: bidirectional
Max. forward impulse current: 127A
Breakdown voltage: 24.4V
Leakage current: 5µA
Mounting: THT
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
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BZW50-12B |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 13.3V; 227A; bidirectional; R6; 5kW; Ammo Pack
Case: R6
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Max. forward impulse current: 227A
Breakdown voltage: 13.3V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
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BZW50-82 |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 91V; 34A; unidirectional; R6; Ammo Pack
Case: R6
Max. off-state voltage: 82V
Semiconductor structure: unidirectional
Max. forward impulse current: 34A
Breakdown voltage: 91V
Leakage current: 5µA
Mounting: THT
Kind of package: Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Produkt ist nicht verfügbar
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STM32H755IIT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755BIT3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Number of comparators: 2
Family: STM32H7
Produkt ist nicht verfügbar
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STM32H755BIT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755IIK3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755IIK6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755IIT3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: LQFP176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755XIH3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755XIH6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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STM32H755ZIT3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Clock frequency: 480MHz
Number of comparators: 2
Produkt ist nicht verfügbar
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SMCJ5.0CA-TR | ![]() |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.74V; 171A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.74V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BTB08-600CRG |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 25mA; Ifsm: 80A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
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STB7NK80ZT4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.3A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 557 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.53 EUR |
27+ | 2.75 EUR |
57+ | 1.27 EUR |
59+ | 1.22 EUR |
M95M01-RMN6TP |
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Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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VND5050AJTR-E |
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Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 2; SMD; PowerSSO12; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 18A
Mounting: SMD
Number of channels: 2
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
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STH30N65DM6-7AG |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Mounting: SMD
Case: H2PAK7
Drain-source voltage: 650V
Drain current: 18A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 223W
Polarisation: unipolar
Gate charge: 46nC
Technology: MDmesh™ DM6
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 112A
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STGW35HF60WD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 35A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 35A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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STM32F103T6U7A |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 10kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 3
Family: STM32F1
Kind of package: in-tray
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STM32F103TBU6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; UFQFPN32; 2÷3.6VDC; STM32F1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: CAN; I2C; SPI; USART x2; USB
Kind of architecture: Cortex M3
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 20kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 4
Family: STM32F1
Kind of package: reel; tape
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