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STM32F217ZET6 STM32F217ZET6 STMicroelectronics en.CD00263874.pdf Description: IC MCU 32BIT 512KB FLASH 144LQFP
Number of I/O: 114
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, Memory Card, SPI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 132K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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10+18.84 EUR
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STM32F217ZGT6 STM32F217ZGT6 STMicroelectronics en.CD00263874.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 114
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, Memory Card, SPI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 132K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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10+28.3 EUR
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120+24.26 EUR
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STM32L151C8T6 STM32L151C8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
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STM32L151CBT6 STM32L151CBT6 STMicroelectronics en.DM00078689.pdf Description: IC MCU 32BIT 128KB FLASH 48LQFP
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
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STM32L151RBT6 STM32L151RBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 4K x 8
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
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10+11 EUR
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160+9.08 EUR
320+8.79 EUR
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STM32L151V8T6 STM32L151V8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
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STM32L151VBT6 STM32L151VBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Part Status: Not For New Designs
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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STM32L152C8T6 STM32L152C8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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100+6.44 EUR
250+6.16 EUR
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STM32L152CBT6 STM32L152CBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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2+13.3 EUR
10+10.27 EUR
25+9.51 EUR
100+8.68 EUR
250+8.27 EUR
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STM32L152R8T6 STM32L152R8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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STM32L152RBT6 STM32L152RBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
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160+10.46 EUR
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STM32L152V8T6 STM32L152V8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
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STM32L152VBT6 STM32L152VBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
auf Bestellung 502 Stücke:
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24+12.16 EUR
90+11.16 EUR
270+10.57 EUR
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STM3220G-EVAL STM3220G-EVAL STMicroelectronics evaluation-tools.html Description: STM32 F2 EVAL BRD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Produkt ist nicht verfügbar
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STM3221G-EVAL STM3221G-EVAL STMicroelectronics en.DM00024612.pdf Description: STM32 F2 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STL160N3LLH6 STL160N3LLH6 STMicroelectronics Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL23NM60ND STL23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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STL24NM60N STL24NM60N STMicroelectronics STL24NM60N.pdf Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
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STL35N15F3 STL35N15F3 STMicroelectronics STL35N15F3.pdf Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Produkt ist nicht verfügbar
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STPSC1006G-TR STPSC1006G-TR STMicroelectronics STPSC1006_Rev_3.pdf Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
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STPSC806G-TR STPSC806G-TR STMicroelectronics diodes-and-rectifiers.html Description: DIODE SIL CARBIDE 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Produkt ist nicht verfügbar
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STL24NM60N STL24NM60N STMicroelectronics STL24NM60N.pdf Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6957 Stücke:
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3+10.01 EUR
10+6.68 EUR
100+4.78 EUR
500+3.97 EUR
1000+3.78 EUR
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STL23NM60ND STL23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPSC806G-TR STPSC806G-TR STMicroelectronics diodes-and-rectifiers.html Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar
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STN3N40K3 STN3N40K3 STMicroelectronics en.CD00278221.pdf Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
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STTH1002CGY-TR STTH1002CGY-TR STMicroelectronics en.CD00274261.pdf Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESDAXLC4-1BF3 ESDAXLC4-1BF3 STMicroelectronics Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Power Line Protection: No
Power - Peak Pulse: 55W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: 2-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XFBGA, FCBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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STB6N52K3 STB6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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STD3LN62K3 STD3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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STD96N3LLH6 STD96N3LLH6 STMicroelectronics STD96N3LLH6.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Produkt ist nicht verfügbar
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STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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2+14.03 EUR
10+9.48 EUR
100+6.9 EUR
500+6.63 EUR
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STB6N52K3 STB6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
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STD96N3LLH6 STD96N3LLH6 STMicroelectronics STD96N3LLH6.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
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STD3LN62K3 STD3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
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STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
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STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
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STTH1002CGY-TR STTH1002CGY-TR STMicroelectronics en.CD00274261.pdf Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STN3N40K3 STN3N40K3 STMicroelectronics en.CD00278221.pdf Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
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STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
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STT13005-K STT13005-K STMicroelectronics STT13005_Rev3_Nov2009.pdf Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
Produkt ist nicht verfügbar
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STP24NM60N STP24NM60N STMicroelectronics en.CD00286763.pdf Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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STB18N55M5 STB18N55M5 STMicroelectronics STB_D_F_P18N55M5_Rev_3.pdf Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STP180N10F3 STMicroelectronics Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
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STP260N6F6 STP260N6F6 STMicroelectronics stp260n6f6.pdf Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP3LN62K3 STP3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
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STP52N25M5 STP52N25M5 STMicroelectronics STP52N25M5.pdf Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
Produkt ist nicht verfügbar
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ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
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STY112N65M5 STY112N65M5 STMicroelectronics en.CD00222838.pdf Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
Produkt ist nicht verfügbar
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STB16N65M5 STB16N65M5 STMicroelectronics ST%28B%2CD%2916N65M5.pdf Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Produkt ist nicht verfügbar
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STM32F217ZET6 en.CD00263874.pdf
STM32F217ZET6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Number of I/O: 114
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, Memory Card, SPI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 132K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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STM32F217ZGT6 en.CD00263874.pdf
STM32F217ZGT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Number of I/O: 114
Part Status: Active
Supplier Device Package: 144-LQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, IrDA, LINbus, Memory Card, SPI, UART/USART, USB OTG
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 132K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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STM32L151C8T6 en.CD00277537.pdf
STM32L151C8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
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2+11.29 EUR
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STM32L151CBT6 en.DM00078689.pdf
STM32L151CBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
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STM32L151RBT6 en.CD00277537.pdf
STM32L151RBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 4K x 8
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
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2+14.22 EUR
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STM32L151V8T6 en.CD00277537.pdf
STM32L151V8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
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STM32L151VBT6 en.CD00277537.pdf
STM32L151VBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Part Status: Not For New Designs
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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2+15.14 EUR
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STM32L152C8T6 en.CD00277537.pdf
STM32L152C8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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3+9.95 EUR
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STM32L152CBT6 en.CD00277537.pdf
STM32L152CBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
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2+13.3 EUR
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STM32L152R8T6 en.CD00277537.pdf
STM32L152R8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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STM32L152RBT6 en.CD00277537.pdf
STM32L152RBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
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STM32L152V8T6 en.CD00277537.pdf
STM32L152V8T6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
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STM32L152VBT6 en.CD00277537.pdf
STM32L152VBT6
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
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STM3220G-EVAL evaluation-tools.html
STM3220G-EVAL
Hersteller: STMicroelectronics
Description: STM32 F2 EVAL BRD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Produkt ist nicht verfügbar
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STM3221G-EVAL en.DM00024612.pdf
STM3221G-EVAL
Hersteller: STMicroelectronics
Description: STM32 F2 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Produkt ist nicht verfügbar
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STL160N3LLH6
STL160N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL23NM60ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STL23NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL24NM60N STL24NM60N.pdf
STL24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
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STL35N15F3 STL35N15F3.pdf
STL35N15F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Produkt ist nicht verfügbar
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STPSC1006G-TR STPSC1006_Rev_3.pdf
STPSC1006G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Produkt ist nicht verfügbar
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STPSC806G-TR diodes-and-rectifiers.html
STPSC806G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Produkt ist nicht verfügbar
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STL24NM60N STL24NM60N.pdf
STL24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6957 Stücke:
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3+10.01 EUR
10+6.68 EUR
100+4.78 EUR
500+3.97 EUR
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STL23NM60ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STL23NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPSC806G-TR diodes-and-rectifiers.html
STPSC806G-TR
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Produkt ist nicht verfügbar
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STN3N40K3 en.CD00278221.pdf
STN3N40K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
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4000+0.57 EUR
12000+0.51 EUR
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STTH1002CGY-TR en.CD00274261.pdf
STTH1002CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESDAXLC4-1BF3
ESDAXLC4-1BF3
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Power Line Protection: No
Power - Peak Pulse: 55W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: 2-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XFBGA, FCBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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STB6N52K3 en.CD00208985.pdf
STB6N52K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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STD3LN62K3 en.CD00298241.pdf
STD3LN62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar
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STD96N3LLH6 STD96N3LLH6.pdf
STD96N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Hersteller: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Produkt ist nicht verfügbar
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STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.83 EUR
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STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.03 EUR
10+9.48 EUR
100+6.9 EUR
500+6.63 EUR
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STB6N52K3 en.CD00208985.pdf
STB6N52K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Produkt ist nicht verfügbar
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STD96N3LLH6 STD96N3LLH6.pdf
STD96N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2405 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
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STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Hersteller: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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STD3LN62K3 en.CD00298241.pdf
STD3LN62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.45 EUR
10+6.96 EUR
100+4.97 EUR
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STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH1002CGY-TR en.CD00274261.pdf
STTH1002CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STN3N40K3 en.CD00278221.pdf
STN3N40K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
auf Bestellung 31087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
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STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
11+1.96 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.52 EUR
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STT13005-K STT13005_Rev3_Nov2009.pdf
STT13005-K
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
Produkt ist nicht verfügbar
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STP24NM60N en.CD00286763.pdf
STP24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
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3+8.4 EUR
50+4.3 EUR
100+3.9 EUR
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STB18N55M5 STB_D_F_P18N55M5_Rev_3.pdf
STB18N55M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STP180N10F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.77 EUR
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STP260N6F6 stp260n6f6.pdf
STP260N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP3LN62K3 en.CD00298241.pdf
STP3LN62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.97 EUR
10+2.53 EUR
50+1.92 EUR
100+1.71 EUR
500+1.37 EUR
Mindestbestellmenge: 6 Stücke
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STP52N25M5 STP52N25M5.pdf
STP52N25M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
Produkt ist nicht verfügbar
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ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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STY112N65M5 en.CD00222838.pdf
STY112N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
Produkt ist nicht verfügbar
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STB16N65M5 ST%28B%2CD%2916N65M5.pdf
STB16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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