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STD96N3LLH6 STD96N3LLH6 STMicroelectronics en.CD00297648.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.17 EUR
Mindestbestellmenge: 1000
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STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Produkt ist nicht verfügbar
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STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.7 EUR
Mindestbestellmenge: 3000
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STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
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2+11.56 EUR
10+7.82 EUR
100+5.7 EUR
500+5.47 EUR
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STB6N52K3 STB6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Produkt ist nicht verfügbar
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STD96N3LLH6 STD96N3LLH6 STMicroelectronics en.CD00297648.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2477 Stücke:
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8+2.39 EUR
12+1.51 EUR
100+1 EUR
500+0.79 EUR
1000+0.72 EUR
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
auf Bestellung 1046 Stücke:
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5+3.66 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
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STD3LN62K3 STD3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
auf Bestellung 120 Stücke:
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10+5.74 EUR
100+4.11 EUR
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STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH1002CGY-TR STTH1002CGY-TR STMicroelectronics en.CD00274261.pdf Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STN3N40K3 STN3N40K3 STMicroelectronics en.CD00278221.pdf Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
auf Bestellung 36014 Stücke:
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10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
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STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4647 Stücke:
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7+2.6 EUR
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100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
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ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+0.44 EUR
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STT13005-K STT13005-K STMicroelectronics STT13005_Rev3_Nov2009.pdf Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
Produkt ist nicht verfügbar
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STP24NM60N STP24NM60N STMicroelectronics en.CD00286763.pdf Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 379 Stücke:
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3+6.92 EUR
50+3.55 EUR
100+3.22 EUR
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STB18N55M5 STB18N55M5 STMicroelectronics STB_D_F_P18N55M5_Rev_3.pdf Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STP180N10F3 STMicroelectronics Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
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STP260N6F6 STP260N6F6 STMicroelectronics en.CD00272622.pdf Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP3LN62K3 STP3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
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STP52N25M5 STP52N25M5 STMicroelectronics STP52N25M5.pdf Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
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ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
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STY112N65M5 STY112N65M5 STMicroelectronics en.CD00222838.pdf Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
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STB16N65M5 STB16N65M5 STMicroelectronics ST%28B%2CD%2916N65M5.pdf Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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STM6503SEAADG6F STM6503SEAADG6F STMicroelectronics en.CD00244356.pdf Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
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LSM303DLMTR LSM303DLMTR STMicroelectronics LSM303DLM.pdf Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Part Status: Obsolete
Supplier Device Package: 28-LGA (5x5)
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 28-VFLGA Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VIPER28HDTR VIPER28HDTR STMicroelectronics VIPER28.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
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VIPER28LDTR VIPER28LDTR STMicroelectronics VIPER28.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Power (Watts): 16 W
Voltage - Start Up: 14 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SO
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 60kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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ST2329IQTR ST2329IQTR STMicroelectronics ST2329I.pdf Description: IC XLTR VL BIDIR 10-QFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 10-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 18Mbps
Supplier Device Package: 10-QFN (1.8x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Obsolete
Number of Circuits: 1
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TSV6191AICT TSV6191AICT STMicroelectronics en.CD00285562.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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TSV6191AILT TSV6191AILT STMicroelectronics en.CD00285562.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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STTS3000B2DN3F STTS3000B2DN3F STMicroelectronics STTS3000.pdf Description: IC MEMORY MOD TEMP SENSOR 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor), DIMM DDR Memory
Accuracy: ±3°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Sensor Type: Internal
Sensing Temperature: -40°C ~ 125°C
Topology: ADC (Sigma Delta), Comparator, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 8-TDFN (2x3)
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STLED325QTR STLED325QTR STMicroelectronics STLED325.pdf Description: IC DRVR 8 SEGMENT 5 DIGIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LED
Mounting Type: Surface Mount
Interface: I2C
Configuration: 8 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Digits or Characters: 5 Digits
Supplier Device Package: 32-QFN (5x5)
Current - Supply: 2 mA
Produkt ist nicht verfügbar
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MP34DB01TR MP34DB01TR STMicroelectronics mems-microphones.html Description: MIC MEMS DIGITAL PDM OMNI -26DB
Frequency Range: 20 Hz ~ 20 kHz
Voltage Range: 1.64 V ~ 3.6 V
Current - Supply: 650 µA
Voltage - Rated: 1.8 V
Part Status: Obsolete
Height (Max): 0.043" (1.10mm)
Port Location: Bottom
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 62.6dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -26dB ±3dB @ 94dB SPL
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Output Type: Digital, PDM
Packaging: Tape & Reel (TR)
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STEVAL-ILL022V1 STEVAL-ILL022V1 STMicroelectronics STEVAL-ILL022V1_Br.pdf Description: EVAL BOARD FOR STM32F101R
Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: STM32F101R
Type: Reference Design
Function: Solar Charger, LED Driver
Packaging: Box
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STEVAL-IPP002V1 STEVAL-IPP002V1 STMicroelectronics steval-ipp002v1.html Description: EVAL BRD FOR STM32F103V SPZB260
Packaging: Box
Function: Energy/Power Meter
Type: Power Management
Utilized IC / Part: STM32F103V, SPZB260, ST7570, STPMC1/STPMS1
Supplied Contents: Board(s)
Primary Attributes: S-FSK Power Line Communications up to 2.4kbps
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Secondary Attributes: USB and RS232/IrDA Connectivity
Contents: Board(s)
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STEVAL-ILL029V2 STEVAL-ILL029V2 STMicroelectronics STEVAL-ILL029V2_UM.pdf Description: EVAL BOARD FOR STLED325 STM8S
Packaging: Box
Function: LED Front Panel
Type: Display
Contents: Board(s)
Utilized IC / Part: STLED325, STM8S, STMPE24M31
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
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MP34DB01TR MP34DB01TR STMicroelectronics mems-microphones.html Description: MIC MEMS DIGITAL PDM OMNI -26DB
Frequency Range: 20 Hz ~ 20 kHz
Voltage Range: 1.64 V ~ 3.6 V
Current - Supply: 650 µA
Voltage - Rated: 1.8 V
Part Status: Obsolete
Height (Max): 0.043" (1.10mm)
Port Location: Bottom
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 62.6dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -26dB ±3dB @ 94dB SPL
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Output Type: Digital, PDM
Packaging: Cut Tape (CT)
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TSV6191AICT TSV6191AICT STMicroelectronics en.CD00285562.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 63 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 800 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 450 kHz
Slew Rate: 0.08V/µs
Current - Supply: 10.5µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
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STM6503SEAADG6F STM6503SEAADG6F STMicroelectronics en.CD00244356.pdf Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
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TSV6191AILT TSV6191AILT STMicroelectronics en.CD00285562.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 63 mA
Number of Circuits: 1
Supplier Device Package: SOT-23-5
Voltage - Input Offset: 800 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 450 kHz
Slew Rate: 0.08V/µs
Current - Supply: 10.5µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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VIPER28HDTR VIPER28HDTR STMicroelectronics VIPER28.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
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STH210N75F6-2 STH210N75F6-2 STMicroelectronics STH210N75F6-2.pdf Description: MOSFET N-CH 75V 180A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STL75N8LF6 STL75N8LF6 STMicroelectronics Description: MOSFET N-CH 80V 75A POWERFLAT
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STL75N8LF6 STL75N8LF6 STMicroelectronics Description: MOSFET N-CH 80V 75A POWERFLAT
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STH210N75F6-2 STH210N75F6-2 STMicroelectronics STH210N75F6-2.pdf Description: MOSFET N-CH 75V 180A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EVAL5988D EVAL5988D STMicroelectronics en.CD00222887.pdf Description: BOARD EVALUATION L5988D
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: L5988D
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 4A
Voltage - Input: 2.9V ~ 18V
Voltage - Output: 0.6V ~ 18V
Packaging: Box
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EVALPM8803-FLY EVALPM8803-FLY STMicroelectronics en.DM00024716.pdf Description: EVAL BOARD FOR PM8803
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3.3V or 5V Output
Supplied Contents: Board(s)
Utilized IC / Part: PM8803
Type: Power Management
Function: Power Over Ethernet (PoE)
Packaging: Box
Produkt ist nicht verfügbar
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EVALPM8803-FWD EVALPM8803-FWD STMicroelectronics en.DM00024225.pdf Description: EVAL BOARD FOR PM8803
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3.3V or 5V Output
Supplied Contents: Board(s)
Utilized IC / Part: PM8803
Type: Power Management
Function: Power Over Ethernet (PoE)
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-IHP002V1 STEVAL-IHP002V1 STMicroelectronics STEVAL-IHP002V1_Br.pdf Description: EVAL BD FOR STM32F10X ST7540 PLM
Packaging: Box
Function: Energy/Power Meter
Type: Power Management
Utilized IC / Part: STM32F10x, ST7540 PLM, STPM01
Supplied Contents: Board(s)
Primary Attributes: PLM Communications
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+486.31 EUR
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STEVAL-ILL034V1 STEVAL-ILL034V1 STMicroelectronics STEVAL-ILL034V1_DB.pdf Description: BOARD DEMO A19 LAMP L6562A USA
Packaging: Box
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: L6562A
Current - Output / Channel: 370mA
Voltage - Input: 96 ~ 132 VAC
Voltage - Output: 17V ~ 25V
Produkt ist nicht verfügbar
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STEVAL-ILL037V1 STEVAL-ILL037V1 STMicroelectronics en.DM00026245.pdf Description: BOARD DEMO HVLED805
Produkt ist nicht verfügbar
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STEVAL-ISA044V6 STEVAL-ISA044V6 STMicroelectronics en.DM00040896.pdf Description: EVAL BOARD FOR ST1S10
Packaging: Box
Voltage - Input: 2.5V ~ 18V
Current - Output: 3A
Frequency - Switching: 900kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ST1S10
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.14 EUR
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STEVAL-ISA090V1 STEVAL-ISA090V1 STMicroelectronics Description: EVAL BOARD FOR L4973
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: L4973
Board Type: Fully Populated
Regulator Topology: Buck
Contents: Board(s)
Frequency - Switching: 150kHz
Current - Output: 3.5A
Voltage - Input: 8V ~ 55V
Voltage - Output: 5.1V
Packaging: Box
Produkt ist nicht verfügbar
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STD96N3LLH6 en.CD00297648.pdf
STD96N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Hersteller: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.17 EUR
Mindestbestellmenge: 1000
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STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Produkt ist nicht verfügbar
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STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.56 EUR
10+7.82 EUR
100+5.7 EUR
500+5.47 EUR
Mindestbestellmenge: 2
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STB6N52K3 en.CD00208985.pdf
STB6N52K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Produkt ist nicht verfügbar
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STD96N3LLH6 en.CD00297648.pdf
STD96N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.51 EUR
100+1 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Hersteller: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
Mindestbestellmenge: 5
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STD3LN62K3 en.CD00298241.pdf
STD3LN62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Produkt ist nicht verfügbar
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STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.62 EUR
10+5.74 EUR
100+4.11 EUR
Mindestbestellmenge: 3
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STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH1002CGY-TR en.CD00274261.pdf
STTH1002CGY-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STN3N40K3 en.CD00278221.pdf
STN3N40K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
auf Bestellung 36014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
15+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 10
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STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
Mindestbestellmenge: 7
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ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.44 EUR
Mindestbestellmenge: 5000
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STT13005-K STT13005_Rev3_Nov2009.pdf
STT13005-K
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
Produkt ist nicht verfügbar
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STP24NM60N en.CD00286763.pdf
STP24NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.92 EUR
50+3.55 EUR
100+3.22 EUR
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STB18N55M5 STB_D_F_P18N55M5_Rev_3.pdf
STB18N55M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STP180N10F3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.06 EUR
Mindestbestellmenge: 2
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STP260N6F6 en.CD00272622.pdf
STP260N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP3LN62K3 en.CD00298241.pdf
STP3LN62K3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
50+1.33 EUR
100+1.26 EUR
500+1.13 EUR
Mindestbestellmenge: 11
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STP52N25M5 STP52N25M5.pdf
STP52N25M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
Produkt ist nicht verfügbar
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ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Hersteller: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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STY112N65M5 en.CD00222838.pdf
STY112N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
Produkt ist nicht verfügbar
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STB16N65M5 ST%28B%2CD%2916N65M5.pdf
STB16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Produkt ist nicht verfügbar
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STM6503SEAADG6F en.CD00244356.pdf
STM6503SEAADG6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.03 EUR
Mindestbestellmenge: 3000
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LSM303DLMTR LSM303DLM.pdf
LSM303DLMTR
Hersteller: STMicroelectronics
Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Part Status: Obsolete
Supplier Device Package: 28-LGA (5x5)
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 28-VFLGA Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VIPER28HDTR VIPER28.pdf
VIPER28HDTR
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
Produkt ist nicht verfügbar
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VIPER28LDTR VIPER28.pdf
VIPER28LDTR
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Power (Watts): 16 W
Voltage - Start Up: 14 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SO
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 60kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ST2329IQTR ST2329I.pdf
ST2329IQTR
Hersteller: STMicroelectronics
Description: IC XLTR VL BIDIR 10-QFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 10-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 18Mbps
Supplier Device Package: 10-QFN (1.8x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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TSV6191AICT en.CD00285562.pdf
TSV6191AICT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.81 EUR
6000+0.77 EUR
15000+0.74 EUR
Mindestbestellmenge: 3000
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TSV6191AILT en.CD00285562.pdf
TSV6191AILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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STTS3000B2DN3F STTS3000.pdf
STTS3000B2DN3F
Hersteller: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor), DIMM DDR Memory
Accuracy: ±3°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Sensor Type: Internal
Sensing Temperature: -40°C ~ 125°C
Topology: ADC (Sigma Delta), Comparator, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 8-TDFN (2x3)
Produkt ist nicht verfügbar
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STLED325QTR STLED325.pdf
STLED325QTR
Hersteller: STMicroelectronics
Description: IC DRVR 8 SEGMENT 5 DIGIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LED
Mounting Type: Surface Mount
Interface: I2C
Configuration: 8 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Digits or Characters: 5 Digits
Supplier Device Package: 32-QFN (5x5)
Current - Supply: 2 mA
Produkt ist nicht verfügbar
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MP34DB01TR mems-microphones.html
MP34DB01TR
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Frequency Range: 20 Hz ~ 20 kHz
Voltage Range: 1.64 V ~ 3.6 V
Current - Supply: 650 µA
Voltage - Rated: 1.8 V
Part Status: Obsolete
Height (Max): 0.043" (1.10mm)
Port Location: Bottom
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 62.6dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -26dB ±3dB @ 94dB SPL
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Output Type: Digital, PDM
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STEVAL-ILL022V1 STEVAL-ILL022V1_Br.pdf
STEVAL-ILL022V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STM32F101R
Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Supplied Contents: Board(s)
Utilized IC / Part: STM32F101R
Type: Reference Design
Function: Solar Charger, LED Driver
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-IPP002V1 steval-ipp002v1.html
STEVAL-IPP002V1
Hersteller: STMicroelectronics
Description: EVAL BRD FOR STM32F103V SPZB260
Packaging: Box
Function: Energy/Power Meter
Type: Power Management
Utilized IC / Part: STM32F103V, SPZB260, ST7570, STPMC1/STPMS1
Supplied Contents: Board(s)
Primary Attributes: S-FSK Power Line Communications up to 2.4kbps
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Secondary Attributes: USB and RS232/IrDA Connectivity
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-ILL029V2 STEVAL-ILL029V2_UM.pdf
STEVAL-ILL029V2
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STLED325 STM8S
Packaging: Box
Function: LED Front Panel
Type: Display
Contents: Board(s)
Utilized IC / Part: STLED325, STM8S, STMPE24M31
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+131.33 EUR
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MP34DB01TR mems-microphones.html
MP34DB01TR
Hersteller: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Frequency Range: 20 Hz ~ 20 kHz
Voltage Range: 1.64 V ~ 3.6 V
Current - Supply: 650 µA
Voltage - Rated: 1.8 V
Part Status: Obsolete
Height (Max): 0.043" (1.10mm)
Port Location: Bottom
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 62.6dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -26dB ±3dB @ 94dB SPL
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Output Type: Digital, PDM
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TSV6191AICT en.CD00285562.pdf
TSV6191AICT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 63 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-70-5
Voltage - Input Offset: 800 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 450 kHz
Slew Rate: 0.08V/µs
Current - Supply: 10.5µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
auf Bestellung 17626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.71 EUR
25+1.62 EUR
100+1.33 EUR
250+1.24 EUR
500+1.1 EUR
1000+0.87 EUR
Mindestbestellmenge: 10
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STM6503SEAADG6F en.CD00244356.pdf
STM6503SEAADG6F
Hersteller: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Cut Tape (CT)
auf Bestellung 9739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.71 EUR
25+1.55 EUR
100+1.38 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.2 EUR
Mindestbestellmenge: 8
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TSV6191AILT en.CD00285562.pdf
TSV6191AILT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 63 mA
Number of Circuits: 1
Supplier Device Package: SOT-23-5
Voltage - Input Offset: 800 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 450 kHz
Slew Rate: 0.08V/µs
Current - Supply: 10.5µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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VIPER28HDTR VIPER28.pdf
VIPER28HDTR
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
auf Bestellung 1423 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.27 EUR
25+2.06 EUR
100+1.84 EUR
250+1.74 EUR
500+1.67 EUR
1000+1.62 EUR
Mindestbestellmenge: 6
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STH210N75F6-2 STH210N75F6-2.pdf
STH210N75F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL75N8LF6
STL75N8LF6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 75A POWERFLAT
Produkt ist nicht verfügbar
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STL75N8LF6
STL75N8LF6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 75A POWERFLAT
Produkt ist nicht verfügbar
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STH210N75F6-2 STH210N75F6-2.pdf
STH210N75F6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EVAL5988D en.CD00222887.pdf
EVAL5988D
Hersteller: STMicroelectronics
Description: BOARD EVALUATION L5988D
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: L5988D
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 4A
Voltage - Input: 2.9V ~ 18V
Voltage - Output: 0.6V ~ 18V
Packaging: Box
Produkt ist nicht verfügbar
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EVALPM8803-FLY en.DM00024716.pdf
EVALPM8803-FLY
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR PM8803
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3.3V or 5V Output
Supplied Contents: Board(s)
Utilized IC / Part: PM8803
Type: Power Management
Function: Power Over Ethernet (PoE)
Packaging: Box
Produkt ist nicht verfügbar
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EVALPM8803-FWD en.DM00024225.pdf
EVALPM8803-FWD
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR PM8803
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3.3V or 5V Output
Supplied Contents: Board(s)
Utilized IC / Part: PM8803
Type: Power Management
Function: Power Over Ethernet (PoE)
Packaging: Box
Produkt ist nicht verfügbar
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STEVAL-IHP002V1 STEVAL-IHP002V1_Br.pdf
STEVAL-IHP002V1
Hersteller: STMicroelectronics
Description: EVAL BD FOR STM32F10X ST7540 PLM
Packaging: Box
Function: Energy/Power Meter
Type: Power Management
Utilized IC / Part: STM32F10x, ST7540 PLM, STPM01
Supplied Contents: Board(s)
Primary Attributes: PLM Communications
Embedded: Yes, MCU, 32-Bit
Part Status: Obsolete
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+486.31 EUR
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STEVAL-ILL034V1 STEVAL-ILL034V1_DB.pdf
STEVAL-ILL034V1
Hersteller: STMicroelectronics
Description: BOARD DEMO A19 LAMP L6562A USA
Packaging: Box
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: L6562A
Current - Output / Channel: 370mA
Voltage - Input: 96 ~ 132 VAC
Voltage - Output: 17V ~ 25V
Produkt ist nicht verfügbar
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STEVAL-ILL037V1 en.DM00026245.pdf
STEVAL-ILL037V1
Hersteller: STMicroelectronics
Description: BOARD DEMO HVLED805
Produkt ist nicht verfügbar
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STEVAL-ISA044V6 en.DM00040896.pdf
STEVAL-ISA044V6
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR ST1S10
Packaging: Box
Voltage - Input: 2.5V ~ 18V
Current - Output: 3A
Frequency - Switching: 900kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ST1S10
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.14 EUR
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STEVAL-ISA090V1
STEVAL-ISA090V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR L4973
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: L4973
Board Type: Fully Populated
Regulator Topology: Buck
Contents: Board(s)
Frequency - Switching: 150kHz
Current - Output: 3.5A
Voltage - Input: 8V ~ 55V
Voltage - Output: 5.1V
Packaging: Box
Produkt ist nicht verfügbar
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