Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (161878) > Seite 309 nach 2698
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BAT54AWFILMY | STMicroelectronics |
Description: DIODE ARR SCHOT 40V 300MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAT54CWFILMY | STMicroelectronics |
Description: DIODE ARR SCHOT 40V 300MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BAT54FILMY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 300MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54SFILMY | STMicroelectronics |
Description: DIODE ARR SCHOTT 40V 300MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 300mA (DC) Supplier Device Package: SOT-23 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT54WFILMY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 300MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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CPL-WB-01C2 | STMicroelectronics |
Description: IC DIRECTIONAL CPLR FLIPCHIP |
Produkt ist nicht verfügbar |
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DVIULC6-4SC6Y | STMicroelectronics |
Description: TVS DIODE 5VWM 17VC SOT23-6LPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 150°C (TJ) Capacitance @ Frequency: 0.85pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: Yes Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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EMIF01-TV02F3 | STMicroelectronics |
Description: FILTER RC(PI) 75 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, FCBGA Size / Dimension: 0.035" L x 0.035" W (0.89mm x 0.89mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 75Ohms, C = 330pF Height: 0.026" (0.65mm) Filter Order: 2nd Applications: General Purpose Technology: RC (Pi) Resistance - Channel (Ohms): 75 ESD Protection: Yes Number of Channels: 1 |
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EMIF02-SPK01M6 | STMicroelectronics |
Description: FILTER RC(PI) 10 OHMS ESD SMDPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Size / Dimension: 0.057" L x 0.039" W (1.45mm x 1.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 10Ohms, C = 220pF Height: 0.024" (0.60mm) Filter Order: 2nd Applications: Audio Technology: RC (Pi) Resistance - Channel (Ohms): 10 ESD Protection: Yes Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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EMIF03-SIM02F3 | STMicroelectronics |
Description: FILTER RC(PI) 47 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-WFBGA, FCBGA Size / Dimension: 0.045" L x 0.045" W (1.14mm x 1.14mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 20pF Height: 0.026" (0.65mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Part Status: Obsolete Number of Channels: 3 |
Produkt ist nicht verfügbar |
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EMIF06-MSD04F3 | STMicroelectronics |
Description: FILTER RC(PI) 40 OHMS ESD SMDPackaging: Tape & Reel (TR) Package / Case: 16-WFBGA, FCBGA Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 40Ohms, C = 7.5pF (Total) Height: 0.026" (0.65mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 550MHz (Cutoff) Resistance - Channel (Ohms): 40 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
Produkt ist nicht verfügbar |
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EMIF06-SD03F3 | STMicroelectronics |
Description: FILTER RC(PI) 50 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 24-WFBGA, FCBGA Size / Dimension: 0.083" L x 0.083" W (2.10mm x 2.10mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 50Ohms, C = 15pF Height: 0.026" (0.65mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 50 ESD Protection: Yes Part Status: Obsolete Number of Channels: 6 |
Produkt ist nicht verfügbar |
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EMIF08-LCD04M16 | STMicroelectronics |
Description: FILTER LC(PI) 12NH/18PF ESD SMDPackaging: Tape & Reel (TR) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 12nH, C = 18pF Height: 0.022" (0.55mm) Attenuation Value: -35dB @ 900MHz ~ 2GHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: LC (Pi) Center / Cutoff Frequency: 400MHz (Cutoff) Resistance - Channel (Ohms): 12.5 ESD Protection: Yes Part Status: Active Number of Channels: 8 |
Produkt ist nicht verfügbar |
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EMIF10-COM01C2 | STMicroelectronics |
Description: FILTER RC(PI) 200 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 25-WFBGA, FCBGA Size / Dimension: 0.095" L x 0.095" W (2.41mm x 2.41mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 200Ohms, C = 45pF (Total) Height: 0.030" (0.76mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 200 ESD Protection: Yes Part Status: Obsolete Number of Channels: 10 |
Produkt ist nicht verfügbar |
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ESDA14V2-1BF3 | STMicroelectronics |
Description: TVS DIODE 12VWM 2FLIPCHIPPackaging: Tape & Reel (TR) Package / Case: 2-XFBGA, FCBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: 2-FlipChip Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.2V Power - Peak Pulse: 50W Power Line Protection: No Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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ESDARF01-1BM2 | STMicroelectronics |
Description: TVS DIODE 100VWMWM SOD882Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: RF Antenna Capacitance @ Frequency: 3pF @ 1MHz Voltage - Reverse Standoff (Typ): 100mV Supplier Device Package: SOD-882 Bidirectional Channels: 1 Voltage - Breakdown (Min): 700mV Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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HDMIULC6-4SC6Y | STMicroelectronics |
Description: TVS DIODE 5VWM 17VC SOT23-6LPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: Ethernet, HDMI Capacitance @ Frequency: 1pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-23-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: Yes Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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P0109AL 5AA4 | STMicroelectronics |
Description: SCR 100V 250MA SOT23-3LPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 6 mA Current - Gate Trigger (Igt) (Max): 1 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 6A, 7A Current - On State (It (AV)) (Max): 160 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: SOT-23-3L Part Status: Active Current - On State (It (RMS)) (Max): 250 mA Voltage - Off State: 100 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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STN83003 | STMicroelectronics |
Description: TRANS NPN 400V 1.5A SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.6 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STN9260 | STMicroelectronics |
Description: TRANS PNP 600V 0.5A SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1.6 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPS0540ZY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 500MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 40 µA @ 40 V Grade: Automotive |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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Z0103NN5AA4 | STMicroelectronics |
Description: TRIAC SENS GATE 800V 1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 7 mA Current - Gate Trigger (Igt) (Max): 3 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: SOT-223 Part Status: Active Current - On State (It (RMS)) (Max): 1 A Voltage - Off State: 800 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| STAC2932F | STMicroelectronics |
Description: RF MOSFET 50V STAC244FPackaging: Tray Package / Case: STAC244F Current Rating (Amps): 40A Frequency: 175MHz Configuration: N-Channel Power - Output: 390W Gain: 20dB Technology: MOSFET (Metal Oxide) Supplier Device Package: STAC244F Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 250 mA |
Produkt ist nicht verfügbar |
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STAC3932F | STMicroelectronics |
Description: TRANS RF PWR N-CH STAC244F |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| STAC4932F | STMicroelectronics |
Description: RF MOSFET 100V STAC244FPackaging: Tray Package / Case: STAC244F Frequency: 123MHz Configuration: N-Channel Power - Output: 1200W Gain: 26dB Technology: MOSFET (Metal Oxide) Supplier Device Package: STAC244F Part Status: Active Voltage - Rated: 200 V Voltage - Test: 100 V Current - Test: 250 mA |
Produkt ist nicht verfügbar |
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2STW200 | STMicroelectronics |
Description: TRANS PNP DARL 80V 25A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V Supplier Device Package: TO-247-3 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 130 W |
Produkt ist nicht verfügbar |
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BD136-16 | STMicroelectronics |
Description: TRANS PNP 45V 1.5A SOT-32Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Supplier Device Package: SOT-32 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
auf Bestellung 2697 Stücke: Lieferzeit 10-14 Tag (e) |
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BD139-10 | STMicroelectronics |
Description: TRANS NPN 80V 1.5A SOT-32Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Supplier Device Package: SOT-32 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
auf Bestellung 3742 Stücke: Lieferzeit 10-14 Tag (e) |
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BD910 | STMicroelectronics |
Description: TRANS PNP 80V 15A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 90 W |
Produkt ist nicht verfügbar |
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BDX53BFP | STMicroelectronics |
Description: TRANS NPN DARL 80V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Supplier Device Package: TO-220FP Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 29 W |
Produkt ist nicht verfügbar |
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BUL1102E | STMicroelectronics |
Description: TRANS NPN 450V 4A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 70 W |
Produkt ist nicht verfügbar |
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BUL1102EFP | STMicroelectronics |
Description: TRANS NPN 450V 4A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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BUL310FP | STMicroelectronics |
Description: TRANS NPN 500V 5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V Supplier Device Package: TO-220FP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 36 W |
Produkt ist nicht verfügbar |
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BULB128-1 | STMicroelectronics |
Description: TRANS NPN 400V 4A TO-262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V Supplier Device Package: TO-262 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 70 W |
Produkt ist nicht verfügbar |
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BULD118D-1 | STMicroelectronics |
Description: TRANS NPN 400V 2A IPAK |
Produkt ist nicht verfügbar |
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D44H11FP | STMicroelectronics |
Description: TRANS NPN 80V 10A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: TO-220FP Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 36 W |
Produkt ist nicht verfügbar |
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ST13007D | STMicroelectronics |
Description: TRANS NPN 400V 8A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
auf Bestellung 6249 Stücke: Lieferzeit 10-14 Tag (e) |
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ST13007DFP | STMicroelectronics |
Description: TRANS NPN 400V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Supplier Device Package: TO-220FP Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 36 W |
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ST8812FX | STMicroelectronics |
Description: TRANS NPN 600V 7A ISOWATT-218FXPackaging: Tube Package / Case: ISOWATT218FX Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V Supplier Device Package: ISOWATT-218FX Part Status: Obsolete Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STD815CP40 | STMicroelectronics |
Description: TRANS NPN/PNP 400V 1.5A 8DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STD830CP40 | STMicroelectronics |
Description: TRANS NPN/PNP 400V 3A 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 3W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V Supplier Device Package: 8-DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STF10NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STF2N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.2A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STF34NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STGF35HF60W | STMicroelectronics |
Description: IGBT 600V 19A 40W TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220FP Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 290µJ (on), 185µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STGIPS10K60T | STMicroelectronics |
Description: IGBT IPM 600V 10A 25-PWRDIP MODPackaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STGIPS14K60T | STMicroelectronics |
Description: MOD IPM 600V 14A 25-SDIPPackaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 14 A Voltage: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STGP35N35LZ | STMicroelectronics |
Description: IGBT 345V 40A 176W TO220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STGWA60NC60WDR | STMicroelectronics |
Description: IGBT 600V 130A 340W TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Long Leads Td (on/off) @ 25°C: 40ns/240ns Switching Energy: 743µJ (on), 560µJ (off) Test Condition: 390V, 40A, 10Ohm, 15V Gate Charge: 195 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 340 W |
auf Bestellung 436 Stücke: Lieferzeit 10-14 Tag (e) |
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STGWT38IH130D | STMicroelectronics |
Description: IGBT 1300V 63A TO-3PPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: -/284ns Switching Energy: 3.4mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 127 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 1300 V Current - Collector Pulsed (Icm): 125 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI10N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 8.4A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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STI13005-1 | STMicroelectronics |
Description: TRANS NPN 400V 3A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI13NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 11A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI22NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI24NM60N | STMicroelectronics |
Description: MOSFET N CH 600V 17A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI26NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 20A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI4N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 3.8A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI55NF03L | STMicroelectronics |
Description: MOSFET N-CH 30V 55A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -60°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI5N52U | STMicroelectronics |
Description: MOSFET N-CH 525V 4.4A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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STI6N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 5.5A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAT54AWFILMY |
![]() |
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54CWFILMY |
![]() |
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54FILMY |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE SCHOTTKY 40V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.071 EUR |
| 6000+ | 0.065 EUR |
| 9000+ | 0.063 EUR |
| 15000+ | 0.061 EUR |
| BAT54SFILMY |
![]() |
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 40V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.063 EUR |
| BAT54WFILMY |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE SCHOTTKY 40V 300MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.072 EUR |
| 6000+ | 0.07 EUR |
| CPL-WB-01C2 |
![]() |
Hersteller: STMicroelectronics
Description: IC DIRECTIONAL CPLR FLIPCHIP
Description: IC DIRECTIONAL CPLR FLIPCHIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DVIULC6-4SC6Y |
![]() |
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 150°C (TJ)
Capacitance @ Frequency: 0.85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.3 EUR |
| EMIF01-TV02F3 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 75 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Size / Dimension: 0.035" L x 0.035" W (0.89mm x 0.89mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 75Ohms, C = 330pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: General Purpose
Technology: RC (Pi)
Resistance - Channel (Ohms): 75
ESD Protection: Yes
Number of Channels: 1
Description: FILTER RC(PI) 75 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Size / Dimension: 0.035" L x 0.035" W (0.89mm x 0.89mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 75Ohms, C = 330pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: General Purpose
Technology: RC (Pi)
Resistance - Channel (Ohms): 75
ESD Protection: Yes
Number of Channels: 1
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| EMIF02-SPK01M6 |
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Hersteller: STMicroelectronics
Description: FILTER RC(PI) 10 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Size / Dimension: 0.057" L x 0.039" W (1.45mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 10Ohms, C = 220pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Description: FILTER RC(PI) 10 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Size / Dimension: 0.057" L x 0.039" W (1.45mm x 1.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 10Ohms, C = 220pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
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| EMIF03-SIM02F3 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.045" L x 0.045" W (1.14mm x 1.14mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.045" L x 0.045" W (1.14mm x 1.14mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
Produkt ist nicht verfügbar
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| EMIF06-MSD04F3 |
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Hersteller: STMicroelectronics
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 550MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 550MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
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| EMIF06-SD03F3 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 50 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, FCBGA
Size / Dimension: 0.083" L x 0.083" W (2.10mm x 2.10mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 50Ohms, C = 15pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 50
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
Description: FILTER RC(PI) 50 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, FCBGA
Size / Dimension: 0.083" L x 0.083" W (2.10mm x 2.10mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 50Ohms, C = 15pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 50
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
Produkt ist nicht verfügbar
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| EMIF08-LCD04M16 |
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Hersteller: STMicroelectronics
Description: FILTER LC(PI) 12NH/18PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 12nH, C = 18pF
Height: 0.022" (0.55mm)
Attenuation Value: -35dB @ 900MHz ~ 2GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 400MHz (Cutoff)
Resistance - Channel (Ohms): 12.5
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
Description: FILTER LC(PI) 12NH/18PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 12nH, C = 18pF
Height: 0.022" (0.55mm)
Attenuation Value: -35dB @ 900MHz ~ 2GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 400MHz (Cutoff)
Resistance - Channel (Ohms): 12.5
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
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| EMIF10-COM01C2 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 25-WFBGA, FCBGA
Size / Dimension: 0.095" L x 0.095" W (2.41mm x 2.41mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 45pF (Total)
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 10
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 25-WFBGA, FCBGA
Size / Dimension: 0.095" L x 0.095" W (2.41mm x 2.41mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 45pF (Total)
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 10
Produkt ist nicht verfügbar
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| ESDA14V2-1BF3 |
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Hersteller: STMicroelectronics
Description: TVS DIODE 12VWM 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.2V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Last Time Buy
Description: TVS DIODE 12VWM 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.2V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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| ESDARF01-1BM2 |
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Hersteller: STMicroelectronics
Description: TVS DIODE 100VWMWM SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: RF Antenna
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 100mV
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 700mV
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 100VWMWM SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: RF Antenna
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 100mV
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 700mV
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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| HDMIULC6-4SC6Y |
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Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| P0109AL 5AA4 |
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Hersteller: STMicroelectronics
Description: SCR 100V 250MA SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 1 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6A, 7A
Current - On State (It (AV)) (Max): 160 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Current - On State (It (RMS)) (Max): 250 mA
Voltage - Off State: 100 V
Description: SCR 100V 250MA SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 1 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6A, 7A
Current - On State (It (AV)) (Max): 160 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Current - On State (It (RMS)) (Max): 250 mA
Voltage - Off State: 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.34 EUR |
| STN83003 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
Description: TRANS NPN 400V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.36 EUR |
| 2000+ | 0.33 EUR |
| 3000+ | 0.31 EUR |
| STN9260 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.56 EUR |
| 2000+ | 0.51 EUR |
| 3000+ | 0.49 EUR |
| STPS0540ZY |
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Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.097 EUR |
| 6000+ | 0.093 EUR |
| 9000+ | 0.085 EUR |
| 15000+ | 0.083 EUR |
| Z0103NN5AA4 |
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Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 800V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| 5000+ | 0.17 EUR |
| 7000+ | 0.16 EUR |
| 10000+ | 0.15 EUR |
| STAC2932F |
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Hersteller: STMicroelectronics
Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
Produkt ist nicht verfügbar
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| STAC3932F |
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Hersteller: STMicroelectronics
Description: TRANS RF PWR N-CH STAC244F
Description: TRANS RF PWR N-CH STAC244F
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| STAC4932F |
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Hersteller: STMicroelectronics
Description: RF MOSFET 100V STAC244F
Packaging: Tray
Package / Case: STAC244F
Frequency: 123MHz
Configuration: N-Channel
Power - Output: 1200W
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Part Status: Active
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 250 mA
Description: RF MOSFET 100V STAC244F
Packaging: Tray
Package / Case: STAC244F
Frequency: 123MHz
Configuration: N-Channel
Power - Output: 1200W
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Part Status: Active
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 250 mA
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| 2STW200 |
Hersteller: STMicroelectronics
Description: TRANS PNP DARL 80V 25A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
Description: TRANS PNP DARL 80V 25A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD136-16 | ![]() |
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Hersteller: STMicroelectronics
Description: TRANS PNP 45V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS PNP 45V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
auf Bestellung 2697 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 50+ | 0.5 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.27 EUR |
| BD139-10 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 80V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS NPN 80V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 50+ | 0.43 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.23 EUR |
| BD910 |
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Hersteller: STMicroelectronics
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BDX53BFP |
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Hersteller: STMicroelectronics
Description: TRANS NPN DARL 80V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 29 W
Description: TRANS NPN DARL 80V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 29 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BUL1102E |
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Hersteller: STMicroelectronics
Description: TRANS NPN 450V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 70 W
Description: TRANS NPN 450V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 70 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BUL1102EFP |
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Hersteller: STMicroelectronics
Description: TRANS NPN 450V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
Description: TRANS NPN 450V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
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| BUL310FP |
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Hersteller: STMicroelectronics
Description: TRANS NPN 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 36 W
Description: TRANS NPN 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 36 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BULB128-1 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 4A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-262
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Description: TRANS NPN 400V 4A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-262
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BULD118D-1 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 2A IPAK
Description: TRANS NPN 400V 2A IPAK
Produkt ist nicht verfügbar
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| D44H11FP |
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Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ST13007D |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 6249 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 50+ | 1.52 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| 2000+ | 0.92 EUR |
| 5000+ | 0.84 EUR |
| ST13007DFP |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Description: TRANS NPN 400V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ST8812FX |
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Hersteller: STMicroelectronics
Description: TRANS NPN 600V 7A ISOWATT-218FX
Packaging: Tube
Package / Case: ISOWATT218FX
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
Supplier Device Package: ISOWATT-218FX
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Description: TRANS NPN 600V 7A ISOWATT-218FX
Packaging: Tube
Package / Case: ISOWATT218FX
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
Supplier Device Package: ISOWATT-218FX
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STD815CP40 |
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Hersteller: STMicroelectronics
Description: TRANS NPN/PNP 400V 1.5A 8DIP
Description: TRANS NPN/PNP 400V 1.5A 8DIP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STD830CP40 |
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Hersteller: STMicroelectronics
Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STF10NM60ND |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF2N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Description: MOSFET N-CH 620V 2.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF34NM60ND |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Description: MOSFET N-CH 600V 29A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Produkt ist nicht verfügbar
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| STGF35HF60W |
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Hersteller: STMicroelectronics
Description: IGBT 600V 19A 40W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 40 W
Description: IGBT 600V 19A 40W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 40 W
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| STGIPS10K60T |
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Hersteller: STMicroelectronics
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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| STGIPS14K60T |
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Hersteller: STMicroelectronics
Description: MOD IPM 600V 14A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 14 A
Voltage: 600 V
Description: MOD IPM 600V 14A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 14 A
Voltage: 600 V
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| STGP35N35LZ |
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Hersteller: STMicroelectronics
Description: IGBT 345V 40A 176W TO220
Description: IGBT 345V 40A 176W TO220
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| STGWA60NC60WDR |
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Hersteller: STMicroelectronics
Description: IGBT 600V 130A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 743µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 340 W
Description: IGBT 600V 130A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 743µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 340 W
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.04 EUR |
| 10+ | 11.19 EUR |
| 100+ | 9.32 EUR |
| STGWT38IH130D |
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Hersteller: STMicroelectronics
Description: IGBT 1300V 63A TO-3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
Description: IGBT 1300V 63A TO-3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
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| STI10N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 8.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Description: MOSFET N-CH 620V 8.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.87 EUR |
| STI13005-1 |
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Hersteller: STMicroelectronics
Description: TRANS NPN 400V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
Description: TRANS NPN 400V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
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| STI13NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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| STI22NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 16A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 600V 16A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
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| STI24NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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| STI26NM60N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 600V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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| STI4N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 3.8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 620V 3.8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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| STI55NF03L |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 55A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
Description: MOSFET N-CH 30V 55A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
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| STI5N52U |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 525V 4.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
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| STI6N62K3 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Description: MOSFET N-CH 620V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
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